公开(公告)号：US12218009B2

公开(公告)日：2025-02-04

申请号：US18363458

申请日：2023-08-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Che Tu ,  Wei-Chih Chen ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: H01L21/82 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, where after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies.

公开(公告)号：US20250038148A1

公开(公告)日：2025-01-30

申请号：US18403418

申请日：2024-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih Chen ,  Jhih-Yu Wang ,  Po-Han Wang ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L25/00 ,  H10B80/00

Abstract: A method includes forming a metal post over a first redistribution structure; attaching a first device die to the first redistribution structure, the first device die comprising a through via embedded in a semiconductor substrate; encapsulating the metal post and the first device die in an encapsulant, a first top surface of the encapsulant being level with a second top surface of the semiconductor substrate; recessing the second top surface to expose the through via; forming a dielectric isolation layer around the through via; forming a dielectric layer over the dielectric isolation layer; etching the dielectric layer to form a first opening and a second opening in the dielectric layer; forming a first metal via in the first opening and a second metal via in the second opening; and forming a second redistribution structure over the dielectric layer.

公开(公告)号：US20240395757A1

公开(公告)日：2024-11-28

申请号：US18791201

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/29 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US20240321621A1

公开(公告)日：2024-09-26

申请号：US18733107

申请日：2024-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsiang Hu ,  Chung-Shi Liu ,  Hung-Jui Kuo ,  Ming-Da Cheng

IPC: H01L21/683 ,  H01L21/288 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538

CPC classification number: H01L21/6835 ,  H01L21/2885 ,  H01L21/486 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/5389 ,  H01L21/568 ,  H01L23/49816 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2224/92244

Abstract: A method includes forming an adhesive layer over a carrier, forming a sacrificial layer over the adhesive layer, forming through-vias over the sacrificial layer, and placing a device die over the sacrificial layer. The Method further includes molding and planarizing the device die and the through-vias, de-bonding the carrier by removing the adhesive layer, and removing the sacrificial layer.

公开(公告)号：US12094728B2

公开(公告)日：2024-09-17

申请号：US18324686

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zi-Jheng Liu ,  Yu-Hsiang Hu ,  Jo-Lin Lan ,  Sih-Hao Liao ,  Chen-Cheng Kuo ,  Hung-Jui Kuo ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Meng-Wei Chou

IPC: H01L21/56 ,  H01L23/00 ,  H01L25/00 ,  H01L25/10

CPC classification number: H01L21/561 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L21/568 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

公开(公告)号：US11984410B2

公开(公告)日：2024-05-14

申请号：US18312705

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/482 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/58

CPC classification number: H01L23/585 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US11868047B2

公开(公告)日：2024-01-09

申请号：US17026667

申请日：2020-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: G03F7/031 ,  C08G73/10 ,  G03F7/038 ,  G03F7/039 ,  H01L21/48 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L25/18 ,  H01L21/56

CPC classification number: G03F7/031 ,  C08G73/1067 ,  C08G73/1071 ,  G03F7/039 ,  G03F7/0387 ,  H01L21/481 ,  H01L21/4857 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L25/18 ,  H01L21/561 ,  H01L2224/24137 ,  H01L2224/82101

Abstract: A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.

公开(公告)号：US11837502B2

公开(公告)日：2023-12-05

申请号：US17341015

申请日：2021-06-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Che Tu ,  Wei-Chih Chen ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: H01L23/31 ,  H01L21/82 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L21/82 ,  H01L21/565 ,  H01L23/3107 ,  H01L24/08 ,  H01L24/17 ,  H01L2224/02372

Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, where after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies.

公开(公告)号：US20230384672A1

公开(公告)日：2023-11-30

申请号：US18446562

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: G03F7/031 ,  H01L21/48 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/18 ,  C08G73/10 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/031 ,  H01L21/481 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/82 ,  H01L24/24 ,  H01L25/18 ,  C08G73/1071 ,  G03F7/0387 ,  G03F7/039 ,  H01L21/4857 ,  C08G73/1067 ,  H01L2224/24137 ,  H01L21/561

Abstract: A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.

公开(公告)号：US20230377975A1

公开(公告)日：2023-11-23

申请号：US18363458

申请日：2023-08-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Che Tu ,  Wei-Chih Chen ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: H01L21/82 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L21/82 ,  H01L24/17 ,  H01L23/3107 ,  H01L21/565 ,  H01L24/08 ,  H01L2224/02372

Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, where after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies.