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    Ion beam gun and ion beam exposure device
    31.
    发明授权
    Ion beam gun and ion beam exposure device 失效
    离子束枪和离子束曝光装置

    公开(公告)号：US4902897A

    公开(公告)日：1990-02-20

    申请号：US107424

    申请日：1987-10-13

    Applicant: Seiichi Iwamatsu

    Inventor： Seiichi Iwamatsu

    IPC: H01J27/16 ,  H01J37/317 ,  H01J27/00

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J27/16 ,  H01J37/3174 ,  H01J2237/08 ,  H01J2237/0807 ,  H01J2237/0815 ,  H01J2237/31755 ,  H01J2237/31777 ,  H01J2237/31788

    Abstract: An ion beam exposure device including an ion beam source and an ion beam mask is provided. The ion beam source is formed from a thin film which is disposed between a vacuum side and a gas side. The film is in the form of a plate having a fine wire buried therein or a crystal boundary formed therein. An electric field supplied to the plate ionizing the gas passing from the gas source side of the plate to the vacuum side. A patterned ion mask may be formed directly on the ion beam source, thereby creating an ion beam gun which emits an ion beam in the desired pattern.

    Abstract translation: 提供了包括离子束源和离子束掩模的离子束曝光装置。 离子束源由设置在真空侧和气体侧之间的薄膜形成。 该薄膜是形成有细线的板或其中形成的晶界。 供给到板的电场使从气体源的气体侧流到真空侧的气体电离。 可以在离子束源上直接形成图案化的离子掩模，从而产生以所需图案发射离子束的离子束枪。

    Ion Beam Uniformity Control
    34.
    发明申请
    Ion Beam Uniformity Control 审中-公开
    离子束均匀性控制

    公开(公告)号：US20160111241A1

    公开(公告)日：2016-04-21

    申请号：US14949468

    申请日：2015-11-23

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Alexandre Likhanskii ,  Svetlana B. Radovanov ,  Bon-Woong Koo

    IPC: H01J27/02 ,  H01J27/16

    CPC classification number: H01J27/024 ,  H01J27/16 ,  H01J37/08 ,  H01J2237/0815 ,  H05H2001/4652 ,  H05H2001/466

    Abstract: A plasma chamber having improved controllability of the ion density of the extracted ribbon ion beam is disclosed. A plurality of pairs of RF biased electrodes is disposed on opposite sides of the extraction aperture in a plasma chamber. In some embodiments, one of each pair of RF biased electrodes is biased at the extraction voltage, while the other of each pair is coupled to a RF bias power supply, which provides a RF voltage having a DC component and an AC component. In another embodiment, both of the electrodes in each pair are coupled to a RF biased power supply. A blocker may be disposed in the plasma chamber near the extraction aperture. In some embodiments, RF biased electrodes are disposed on the blocker.

    Abstract translation: 公开了具有提取的带状离子束的离子密度的可控性的等离子体室。 多个RF偏置电极对设置在等离子体室中的提取孔的相对侧上。 在一些实施例中，每对RF偏置电极中的一个被偏置在提取电压，而每对中的另一个耦合到RF偏置电源，RF偏压电源提供具有DC分量和AC分量的RF电压。 在另一个实施例中，每对中的两个电极耦合到RF偏置电源。 阻挡剂可以设置在提取孔附近的等离子体室中。 在一些实施例中，RF偏置电极设置在阻挡器上。

    ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY
    35.
    发明申请
    ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY 审中-公开
    离子束处理装置，电极组件以及清洁电极组件的方法

    公开(公告)号：US20160056016A1

    公开(公告)日：2016-02-25

    申请号：US14878206

    申请日：2015-10-08

    Applicant: CANON ANELVA CORPORATION

    Inventor： Yasushi Yasumatsu ,  Naoyuki Okamoto ,  Masashi Tsujiyama ,  Fumihito Suzuki

    IPC: H01J37/305 ,  H01J37/063 ,  B08B3/08 ,  H01J37/317

    CPC classification number: H01J37/3053 ,  B08B3/08 ,  H01J27/024 ,  H01J37/063 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/083 ,  H01J2237/3151

    Abstract: Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode.

    Abstract translation: 提供了一种离子束处理装置，其包括离子产生室，处理室和通过将在离子产生室中产生的离子提取到处理室来形成离子束的电极。 所述电极包括靠近所述离子产生室设置的第一电极，并设置有离子通道孔以允许所述离子通过，以及邻近所述第一电极设置并且比所述第一电极更靠近所述处理室设置的第二电极，以及 设置有允许离子通过的离子通道孔。 该装置还包括分别对第一电极和第二电极施加不同电位的功率单元，以便加速由离子产生室中的离子发生器产生的离子。 第一电极的材料与第二电极的材料不同。

    Method of ionization
    39.
    发明授权
    Method of ionization 有权
    电离方法

    公开(公告)号：US08742373B2

    公开(公告)日：2014-06-03

    申请号：US12965419

    申请日：2010-12-10

    Applicant: Svetlana Radovanov ,  Ludovic Godet ,  Christopher R. Hatem

    Inventor： Svetlana Radovanov ,  Ludovic Godet ,  Christopher R. Hatem

    IPC: H01J37/32

    CPC classification number: H01J37/32412 ,  C23C14/06 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32623 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31701

    Abstract: A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.

    Abstract translation: 使用至少第一功率和第二功率在等离子体室中的一种或多种气体形成等离子体。 在所述第一功率下产生第一离子种类，并且在所述第二功率下产生第二离子种类。 在一个实施例中，使用至少第一偏置电压和第二偏置电压将第一离子种类和第二离子种类以两种不同的能量注入到工件中。 这可以使植入到两个不同的深度。 这些离子种类可以是原子离子或分子离子。 分子离子可能大于用于形成等离子体的气体。

    Plasma igniter for an inductively coupled plasma ion source
    40.
    发明授权
    Plasma igniter for an inductively coupled plasma ion source 有权
    用于电感耦合等离子体离子源的等离子点火器

    公开(公告)号：US08723143B2

    公开(公告)日：2014-05-13

    申请号：US13276731

    申请日：2011-10-19

    Applicant: Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

    Inventor： Anthony Graupera ,  Sean Kellogg ,  Tom Miller ,  Dustin Laur ,  Shouyin Zhang ,  Antonius Bastianus Wilhelmus Dirriwachter

    IPC: G21G5/00

    CPC classification number: H01J37/08 ,  H01J37/24 ,  H01J2237/0815 ,  H01J2237/31749 ,  H05H1/36

    Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

    Abstract translation: 公开了一种聚焦离子束（FIB）系统，其包括电感耦合等离子体离子源，包含等离子体的绝缘等离子体室，与等离子体接触并被偏压到高电压的导电源偏置电极，以控制离子束能量 样品和多个孔。 等离子体室内的等离子体用作离子柱的虚拟源，该离子柱包括一个或多个在待成像和/或FIB处理的样品的表面上形成聚焦离子束的透镜。 等离子体由安装在塔附近或在柱上的等离子体点火器引发，其在源偏置电极上引起高电压振荡脉冲。 通过将等离子体点火器安装在柱附近，将源偏置电极连接到偏压电源的电缆的电容效应最小化。 通过适当的孔隙材料选择使孔径的离子束溅射最小化。

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