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    FILM FORMATION APPARATUS AND FILM FORMATION METHOD
    33.
    发明申请
    FILM FORMATION APPARATUS AND FILM FORMATION METHOD 审中-公开

    公开(公告)号：US20170268098A1

    公开(公告)日：2017-09-21

    申请号：US15461906

    申请日：2017-03-17

    Applicant: Shibaura Mechatronics Corporation

    Inventor： Daisuke Ono

    IPC: C23C14/34 ,  C23C14/54 ,  C23C14/08 ,  H01J37/34

    CPC classification number: C23C14/3457 ,  C23C14/0042 ,  C23C14/086 ,  C23C14/54 ,  H01J37/32449 ,  H01J37/3426 ,  H01J37/347 ,  H01J37/3476

    Abstract: A film formation apparatus includes a chamber that is a sealed container in which a target formed of a film formation material is placed, and into which the workpiece is carried, a gas discharging unit discharging a gas in the sealed container for a predetermined time period after the workpiece is carried into the chamber to obtain a base pressure, and a sputter gas introducing unit introducing a sputter gas containing oxygen to the interior of the chamber having undergone the discharging and becoming the base pressure. The sputter gas introducing unit decreases an oxygen partial pressure in the sputter gas to be introduced in the chamber in accordance with an increase in the base pressure due to an increase of the film formation material sticking to the interior of the chamber.

    SYSTEMS AND METHODS FOR SINGLE MAGNETRON SPUTTERING
    34.
    发明申请
    SYSTEMS AND METHODS FOR SINGLE MAGNETRON SPUTTERING 审中-公开
    单磁珠溅射的系统和方法

    公开(公告)号：US20170022604A1

    公开(公告)日：2017-01-26

    申请号：US14809084

    申请日：2015-07-24

    Applicant: Advanced Energy Industries, Inc.

    Inventor： David Christie ,  Skip B. Larson

    IPC: C23C14/35 ,  H01J37/34

    CPC classification number: H01J37/3476 ,  C23C14/3485 ,  C23C14/3492 ,  H01J37/3405 ,  H01J37/3438 ,  H01J37/3488

    Abstract: A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode.

    Abstract translation: 描述了用于单磁控溅射的系统和方法。 一个实例包括具有电源的系统，包围衬底的等离子体室，阳极和用于在衬底上沉积薄膜材料的靶。 该示例还具有未涂覆的阳极表征数据的数据存储区和包括阳极分析组件以产生第一健康值的阳极溅射调整系统。 第一健康值表示阳极是否涂有电介质材料。 该示例还具有阳极功率控制器以接收第一健康值并且向脉冲DC电源的脉冲控制器提供阳极能量控制信号，以相对于第一阳极溅射能量调节第二阳极溅射能量以在 来自阳极的电介质材料的至少一部分。

    SPUTTER UNIT
    36.
    发明申请
    SPUTTER UNIT 审中-公开
    飞溅单元

    公开(公告)号：US20160326632A1

    公开(公告)日：2016-11-10

    申请号：US15147926

    申请日：2016-05-06

    Applicant: safematic GmbH

    Inventor： Walter COLLEONI ,  Patrick CAPEDER ,  Christof GRAF

    IPC: C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

    CPC classification number: C23C14/34 ,  C23C14/35 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/347 ,  H01J37/3476 ,  H01J37/3488

    Abstract: A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.

    Abstract translation: 引入溅射单元，包括壳体，气体入口，用于将溅射单元可移除地连接到真空室的接口，布置成用于将经由气体入口接收的处理气体供应到真空室的气体出口，用于可移除连接的界面 所述溅射单元到包括用于在所述真空室中产生真空的真空泵的基本单元，以及布置在所述壳体中的变压器，用于将电源电压增加到电离电压，用于将经由所述气体出口供给的处理气体电离到所述真空室 。

    MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS
    37.
    发明申请
    MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS 审中-公开
    溅射沉积室中逆向电压有限波形的调制

    公开(公告)号：US20160215386A1

    公开(公告)日：2016-07-28

    申请号：US14917511

    申请日：2014-09-09

    Applicant: ITN ENERGY SYSTEMS, INC.

    Inventor： Michael Wayne Stowell

    IPC: C23C14/54 ,  H01J37/34 ,  C23C14/34

    CPC classification number: C23C14/542 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/54 ,  H01J37/32146 ,  H01J37/3405 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/3476

    Abstract: Modulation of a waveform applied to a cathode of a sputtering deposition chamber regulates the sputtering rate and density and kinetic energy of ions in a sputtering deposition chamber. A waveform may include a pulsed DC waveform with a modulated AC signal superimposed on the pulsed DC waveform. The DC waveform may have a reverse voltage period. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. One may modulate various properties of the waveform to increase or decrease sputtering rates and thin-film quality.

    Abstract translation: 施加到溅射沉积室的阴极的波形的调制调节溅射沉积室中的溅射速率，离子的密度和动能。 波形可以包括具有叠加在脉冲DC波形上的调制AC信号的脉冲DC波形。 DC波形可能具有反向电压周期。 提供反向电压限制电路，以便将反向电压尖峰限制到所选择的反向电压阈值。 可以调制波形的各种性质来提高或降低溅射速率和薄膜质量。

    DEFECT REDUCTION IN META-MODE SPUTTER COATINGS
    39.
    发明申请
    DEFECT REDUCTION IN META-MODE SPUTTER COATINGS 有权
    META模式溅射涂料中的缺陷减少

    公开(公告)号：US20160068948A1

    公开(公告)日：2016-03-10

    申请号：US14479207

    申请日：2014-09-05

    Applicant: Apple Inc.

    Inventor： John Z. Zhong ,  Sunggu Kang ,  Wookyung Bae

    IPC: C23C14/58 ,  H01J37/34

    CPC classification number: C23C14/5873 ,  C23C14/564 ,  C23C14/5846 ,  H01J37/32449 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/3476 ,  H01J37/3488

    Abstract: Sputter deposition systems and methods for depositing film coatings on one or more substrates are disclosed. The systems and methods are used to prevent or reduce an amount of defects within a deposited film. The methods involve removing defect-related particles that are formed during a deposition process from certain regions of the sputter deposition system and preventing the defect-related particles from detrimentally affecting the quality of the deposited film. In particular embodiments, methods involve creating a flow of gas from a deposition region to a particle collection region the sputter deposition system such that the defect-related particles are entrained within the flow of gas and away from the deposition region. In particular embodiments, the sputter deposition system is a meta-mode sputter deposition system.

    Abstract translation: 公开了用于在一个或多个基底上沉积膜涂层的溅射沉积系统和方法。 系统和方法用于防止或减少沉积膜内的缺陷量。 所述方法包括去除在溅射沉积系统的某些区域的沉积过程期间形成的缺陷相关颗粒，并防止缺陷相关颗粒不利地影响沉积膜的质量。 在具体实施方案中，方法包括从沉积区域到溅射沉积系统的颗粒收集区域产生气体流，使得缺陷相关颗粒被夹带在气体流中并远离沉积区域。 在特定实施例中，溅射沉积系统是元模式溅射沉积系统。

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