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153 条记录 (耗时 0.028 秒)

    Laser diode structure with blocking layer
    31.
    发明申请
    Laser diode structure with blocking layer 审中-公开
    具有阻挡层的激光二极管结构

    公开(公告)号：US20050141578A1

    公开(公告)日：2005-06-30

    申请号：US10871895

    申请日：2004-06-18

    申请人： Benoit Reid ,  Arnaud Fily ,  Norbert Lichtenstein ,  D. Knight

    发明人： Benoit Reid ,  Arnaud Fily ,  Norbert Lichtenstein ,  D. Knight

    IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/2232 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/2237 ,  H01S5/32391

    摘要： The present invention provides a self-aligned laser structure that can be fabricated on a p-substrate and provides a means for limiting the leakage current thereby improving the overall efficiency of the structure. The waveguide laser structure comprises a first series of layers deposited in sequence upon a p-InP, p-GaAs or p-GaN substrate or other form of p-substrate, wherein these layers form the p-clad layer. An active layer is subsequently deposited upon this first series of layers. A blocking layer of insulating or semi-insulating material is deposited upon the active layer, wherein this blocking layer has a trench formed therein, wherein this semi-insulating layer or layers are epitaxially deposited. The blocking layer provides a means for limiting current flow therethrough, thereby reducing leakage current. Upon the blocking layer are deposited a second series of layers completing the laser structure, wherein this second series of layers form the n-clad layer. Since the n-clad layer contains more than one material, the structure provides lateral waveguiding. Upon the completion of the deposition of all of the layers, a positive electrode is formed on the bottom surface of the first series of layers and a negative electrode is formed on the top of the second series of layers.

    摘要翻译： 本发明提供了可以在p-基板上制造的自对准激光器结构，并提供用于限制漏电流的装置，从而提高结构的整体效率。 波导激光器结构包括依次沉积在p-InP，p-GaAs或p-GaN衬底或其他形式的p衬底上的第一系列层，其中这些层形成p覆层。 随后在该第一系列层上沉积有源层。 绝缘或半绝缘材料的阻挡层沉积在有源层上，其中该阻挡层具有形成在其中的沟槽，其中该半绝缘层被外延沉积。 阻挡层提供了限制电流从而减少泄漏电流的装置。 在阻挡层沉积完成激光结构的第二系列层，其中该第二系列层形成n覆层。 由于n覆层包含多于一种材料，所以该结构提供横向波导。 在完成所有层的沉积之后，在第一系列层的底表面上形成正电极，并且在第二系列层的顶部上形成负电极。

    Spot-size-converted laser for unisolated transmission
    32.
    发明申请
    Spot-size-converted laser for unisolated transmission 审中-公开
    用于单分辨率传输的点尺寸转换激光器

    公开(公告)号：US20030235227A1

    公开(公告)日：2003-12-25

    申请号：US10174805

    申请日：2002-06-19

    发明人： Naresh Chand ,  Julie Eng ,  Martin Christian Fischer ,  Philip Anthony Kiely ,  David J. Klotzkin ,  Keisuke Kojima ,  Genji Tohmon ,  Yan Xu

    IPC分类号： H01S005/00

    CPC分类号： G02B6/1228 ,  G02B6/4203 ,  G02B6/4228 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/1014 ,  H01S5/32391 ,  H01S2301/185

    摘要： A transmit optical subassembly (TOSA) includes a spot-size-converted (SSC) semiconductor laser coupled to an optical fiber without a lens or isolator. The spot-size-converted semiconductor laser includes an active region and an expander region that expands the spot size of the laser while maintaining efficient active laser performance. The SSC laser is coupled to a submount and passively aligned to an optical fiber positioned within a V-shaped groove formed within the submount. The SSC laser includes a narrow far field advantageous for providing a high coupling efficiency and high quality data transmission. The SSC laser is resistant to back reflection and produces a 1.3 or 1.55 micron optical wavelength and a data rate ranging from 1 to 10 Gbps. The TOSA provides high coupled power due to narrow far field, with potential extra reflection resistance due to absorption and mode transfer losses in coupling reflections through the expander back into the active region. The TOSA meets industry specifications (SDH/SONET) for 15 km transmission and has a maximum optical path penalty of less than 1 dB at a bit error ratio of 10null10 for up to null14 dB back reflection.

    摘要翻译： 发射光学子组件（TOSA）包括耦合到没有透镜或隔离器的光纤的点尺寸转换（SSC）半导体激光器。 点尺寸转换半导体激光器包括有源区域和扩展器区域，其扩展激光器的光点尺寸，同时保持有效的激光器性能。 SSC激光器耦合到基座并且被动地对准位于形成在底座内的V形槽内的光纤。 SSC激光器包括有利于提供高耦合效率和高质量数据传输的窄远场。 SSC激光器抗背反射，产生1.3或1.55微米的光波长，数据速率范围从1到10 Gbps。 TOSA由于窄的远场而提供高耦合功率，由于通过扩展器耦合到有源区域的耦合反射中的吸收和模式传输损耗，具有潜在的额外的反射电阻。 TOSA满足15公里传输的行业规范（SDH / SONET），对于高达-14 dB的背反射，误码率为10 <-10的最大光路损耗小于1 dB。

    Semiconductor laser including N-doped quaternary layer
    33.
    发明申请
    Semiconductor laser including N-doped quaternary layer 审中-公开
    半导体激光器包括N掺杂四元层

    公开(公告)号：US20030086458A1

    公开(公告)日：2003-05-08

    申请号：US09495988

    申请日：2000-02-01

    发明人： Kenneth L Bacher

    IPC分类号： H01S005/00

    CPC分类号： B82Y20/00 ,  H01S5/32 ,  H01S5/32391 ,  H01S5/34373 ,  H01S2301/173 ,  H01S2301/18

    摘要： A semiconductor laser including a substrate layer, an n-doped quaternary layer disposed on the substrate layer, a quantum well layer disposed on the quaternary layer, and a cladding layer disposed on the quantum well layer. The structure of the laser creates an optical mode which is substantially more circular, and thus increases the efficiency of the laser when coupling to an optical fiber.

    摘要翻译： 包括衬底层，设置在衬底层上的n掺杂四元层，设置在第四层上的量子阱层和设置在量子阱层上的覆层的半导体激光器。 激光器的结构产生了基本上更圆的光学模式，因此在耦合到光纤时增加了激光器的效率。

    Semiconductor laser element and process for producing the same
    34.
    发明申请
    Semiconductor laser element and process for producing the same 有权
    半导体激光元件及其制造方法

    公开(公告)号：US20030007530A1

    公开(公告)日：2003-01-09

    申请号：US10179012

    申请日：2002-06-26

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Hiroyuki Hosoba ,  Yasuo Kan

    IPC分类号： H01S005/00

    CPC分类号： H01S5/0421 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/321 ,  H01S5/32391

    摘要： In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers.

    摘要翻译： 在半导体激光元件中，有源层夹在第一导电型和第二导电型包覆层之间，第二导电型接触层设置在第二覆层的上方，中间带隙层介于第二覆层 所述接触层，所述第二导电型接触层具有与所述第二导电型包覆层的带隙不同的带隙，所述中间带隙层在所述第二导电型包覆层的带隙与所述第二导电型包覆层的带隙之间具有中间带隙 导电型接触层。 第二导电型接触层具有至少第一接触层，中间第二接触层和第三接触层，并且第二接触层的杂质密度低于第一和第三接触层的杂质浓度。

    Optical filters
    35.
    发明授权
    Optical filters 失效
    光滤波器

    公开(公告)号：US06198863B1

    公开(公告)日：2001-03-06

    申请号：US09051207

    申请日：1998-04-28

    申请人： Ian F Lealman ,  Michael J Robertson ,  Makoto Okai

    发明人： Ian F Lealman ,  Michael J Robertson ,  Makoto Okai

    IPC分类号： G02B634

    CPC分类号： H01S5/06258 ,  G02B6/12007 ,  G02B6/124 ,  H01S5/06256 ,  H01S5/1032 ,  H01S5/1035 ,  H01S5/1209 ,  H01S5/1218 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/32391 ,  H01S5/5045

    摘要： An optical filter is formed from at least two grating located in a waveguide region of a semiconductor optical device. Each grating has a multiple peak optical passband. The gratings are spaced apart in the waveguide region and form an optical cavity having a comb-filter characteristic. The gratings may be located in the active region of an optical gain element and in a preferred example are superstructure gratings (SSGs). A number of filters may be joined together in series.

    摘要翻译： 光学滤波器由位于半导体光学器件的波导区域中的至少两个光栅形成。 每个光栅具有多峰光学通带。 光栅在波导区域中间隔开并形成具有梳状滤波器特性的光学腔。 光栅可以位于光学增益元件的有源区域中，并且在优选的示例中是上部结构光栅（SSG）。 多个过滤器可以串联在一起。

    Semiconductor laser device
    40.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5596592A

    公开(公告)日：1997-01-21

    申请号：US515000

    申请日：1995-08-14

    申请人： Yoriko Tanigami ,  Tomoko Kadowaki ,  Akira Takemoto

    发明人： Yoriko Tanigami ,  Tomoko Kadowaki ,  Akira Takemoto

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/227 ,  H01S5/0421 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/32391

    摘要： A semiconductor laser device includes a ridge waveguide having two side surfaces, a crystalline burying layer disposed at both side surfaces of the ridge waveguide, and a second conductivity type contact layer disposed on the burying layer and the ridge waveguide. The burying layer includes a first conductivity type first current blocking layer in contact with the side surfaces of the ridge waveguide, a second conductivity type second current blocking layer disposed on a portion of the first current blocking layer and separated from the ridge waveguide by a portion of the first current blocking layer near the ridge waveguide, a first conductivity type third current blocking layer disposed on a portion of the first current blocking layer near the ridge waveguide and on the second current blocking layer, and a second conductivity type final burying layer disposed on the third current blocking layer. In this structure, there is no pn junction at a regrowth interface between the final burying layer and the contact layer so that reduction in the forward voltage of the pn junction in continuous operation is avoided and increasing leakage current is suppressed so that the threshold current and light output of the laser do not deteriorate over time.

    摘要翻译： 半导体激光装置包括具有两个侧表面的脊波导，设置在脊波导的两个侧表面处的结晶掩埋层和设置在掩埋层和脊波导上的第二导电类型接触层。 掩埋层包括与脊形波导的侧表面接触的第一导电类型的第一电流阻挡层，设置在第一电流阻挡层的一部分上并与脊波导分开的第二导电类型的第二电流阻挡层， 在脊波导附近的第一电流阻挡层，设置在脊波导附近的第一电流阻挡层的一部分和第二电流阻挡层上的第一导电类型的第三电流阻挡层，以及设置在第二导电类型的最终掩埋层 在第三个电流阻挡层上。 在这种结构中，在最终掩埋层和接触层之间的再生界面处没有pn结，从而避免了在连续操作中pn结的正向电压的降低，并且抑制了增加的漏电流，使得阈值电流和 随着时间的推移，激光的光输出不会变差。