公开(公告)号：US5822349A

公开(公告)日：1998-10-13

申请号：US614210

申请日：1996-03-12

申请人： Keiji Takaoka ,  Mitsuhiro Kushibe ,  Toshihide Izumiya ,  Yoshihiro Kokubun

发明人： Keiji Takaoka ,  Mitsuhiro Kushibe ,  Toshihide Izumiya ,  Yoshihiro Kokubun

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/22 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/0265 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/32391

摘要： This invention is a semiconductor device including a p-type InP substrate having a mesa stripe in which at least an active layer and an n-type cladding layer are formed, and a semiconductor layer so formed as to bury the side surfaces of the mesa stripe and having at least an n-type current blocking layer and a p-type current blocking layer, wherein the n-type current blocking layer contains approximately 8.times.10.sup.17 cm.sup.-3 or more of Se as an impurity and the n-type current blocking layer and the n-type cladding layer are not contacting each other.

摘要翻译： 本发明是一种半导体器件，包括具有至少形成有源层和n型覆层的台面条状的p型InP衬底以及形成为埋设台面条的侧面的半导体层 并且具有至少n型电流阻挡层和p型电流阻挡层，其中n型电流阻挡层含有大约8×10 17 cm -3以上的Se作为杂质，n型电流阻挡层和 n型覆层不接触。

公开(公告)号：US20110312117A1

公开(公告)日：2011-12-22

申请号：US13041123

申请日：2011-03-04

申请人： Aya SUZUKI ,  Kazuhiro Akiyama ,  Toshihide Izumiya

发明人： Aya SUZUKI ,  Kazuhiro Akiyama ,  Toshihide Izumiya

IPC分类号： H01L33/32

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/007

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming an active layer including indium (In) on a heated substrate. The method can include forming a multiple-layer film made of a nitride semiconductor on the active layer in a state of the substrate being heated to substantially the same temperature as a temperature of the forming of the active layer. In addition, the method can include cooling the substrate to room temperature after the forming of the multiple-layer film.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体发光器件的方法。 该方法可以包括在加热的衬底上形成包括铟（In）的活性层。 该方法可以包括在加热到与形成有源层的温度基本相同的温度的基板的状态下在有源层上形成由氮化物半导体制成的多层膜。 此外，该方法可以包括在形成多层膜之后将基板冷却至室温。

公开(公告)号：US5042043A

公开(公告)日：1991-08-20

申请号：US508694

申请日：1990-04-13

申请人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

发明人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

IPC分类号： H01L21/205 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/32 ,  H01S5/343 ,  H01S2302/00 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/3216 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/34333

摘要： A green light-emitting semiconductor laser using a superlattice layer wherein BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers are alternately stacked and each of the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers has a zinc blende type crystal structure, or a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1) mixed crystal layers with a zinc blende type structure a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type, together constituting a double heterojunction.

公开(公告)号：US5317167A

公开(公告)日：1994-05-31

申请号：US59221

申请日：1993-05-10

申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

IPC分类号： H01L33/00 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01L33/0062

摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

摘要翻译： 半导体发光器件包括由多个In x Ga y Al 1-x-y P（0

公开(公告)号：US5079184A

公开(公告)日：1992-01-07

申请号：US538937

申请日：1990-06-15

申请人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

发明人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01L33/305 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01S5/3235 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/32308 ,  H01S5/32325 ,  H01S5/32391 ,  Y10S438/918 ,  Y10S438/925

摘要： A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.

公开(公告)号：US5076860A

公开(公告)日：1991-12-31

申请号：US414520

申请日：1989-09-29

申请人： Yasuo Ohba ,  Toshihide Izumiya ,  Ako Hatano

发明人： Yasuo Ohba ,  Toshihide Izumiya ,  Ako Hatano

IPC分类号： H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01S5/32341 ,  H01S5/343 ,  H01S5/34333 ,  Y10S148/065 ,  Y10S148/113

摘要： A compound semiconductor material includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.

公开(公告)号：US5273933A

公开(公告)日：1993-12-28

申请号：US917321

申请日：1992-07-23

申请人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

发明人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/34 ,  H01L21/20

CPC分类号： H01L33/34 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02477 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0037 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0087 ,  Y10S438/925

摘要： In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH.sub.3).sub.3 SiN.sub.3 is used as raw material for nitrogen. The films are grown at a relatively low temperature and the amount of nitrogen doped in the films is increased.

摘要翻译： 在制造短波长发光元件的过程中，使用MOCVD法在由SiC制成的衬底上形成n型和p型GaInAlN膜。 （CH3）3SiN3用作氮原料。 膜在相对低的温度下生长，并且膜中掺杂的氮的量增加。

公开(公告)号：US5235194A

公开(公告)日：1993-08-10

申请号：US819976

申请日：1992-01-13

申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

IPC分类号： H01L33/00 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L2224/48463 ,  H01L2224/4918 ,  H01L2224/73265

摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

摘要翻译： 半导体发光器件包括由多个In x Ga y Al 1-x-y P（0

公开(公告)号：US5103271A

公开(公告)日：1992-04-07

申请号：US588858

申请日：1990-09-27

申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

IPC分类号： H01L33/00 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01L33/0062

摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x, y.ltoreq.l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

公开(公告)号：US5005057A

公开(公告)日：1991-04-02

申请号：US508685

申请日：1990-04-13

申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

IPC分类号： H01L21/205 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/34 ,  H01L33/54 ,  H01L33/56

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2924/181

摘要： A blue LED which includes a light-emitting layer having a p-n junction makes use of the superlattice structure being formed of a plurality of BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers which are alternately stacked, with the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers having a zinc blende type structure, or else makes use of a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1 and x+y.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure.

摘要翻译： 包括具有pn结的发光层的蓝色LED利用由交替层叠的多个BP层和GaxAl1-xN（0