公开(公告)号：US20180190486A1

公开(公告)日：2018-07-05

申请号：US15707878

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/033

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US20180182618A1

公开(公告)日：2018-06-28

申请号：US15388410

申请日：2016-12-22

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0234

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.

公开(公告)号：US10009961B2

公开(公告)日：2018-06-26

申请号：US14335278

申请日：2014-07-18

Applicant: ASM IP HOLDING B.V.

Inventor： Sokol Ibrani

IPC: H05B3/68 ,  F27D11/00 ,  H05B3/02 ,  C23C16/00 ,  H05B6/10 ,  C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  C23C16/458

CPC classification number: H05B6/105 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68792

Abstract: The present disclosure relates to a substrate support and a heating assembly comprising heaters for controlling the temperature uniformity of a susceptor of the assembly and a substrate, which may be used for thin film deposition on a substrate such as semi-conductor wafer, and a method of using the same is provided for improved temperature uniformity of a susceptor and a substrate heated by the heating assembly.

公开(公告)号：US20180174826A1

公开(公告)日：2018-06-21

申请号：US15380909

申请日：2016-12-15

Applicant: ASM IP Holding B.V.

Inventor： Ivo Johannes Raaijmakers ,  Jan Willem Maes ,  Werner Knaepen ,  Krzysztof Kamil Kachel

IPC: H01L21/027 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02 ,  G03F7/20

CPC classification number: H01L21/0273 ,  C23C16/045 ,  C23C16/4412 ,  C23C16/4485 ,  C23C16/45523 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/52 ,  G03F7/2004 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337

Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

公开(公告)号：US10002755B2

公开(公告)日：2018-06-19

申请号：US15384028

申请日：2016-12-19

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20180163312A1

公开(公告)日：2018-06-14

申请号：US15835262

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  C09K13/00

CPC classification number: C23F4/02 ,  C09K13/00 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32135

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20180151355A1

公开(公告)日：2018-05-31

申请号：US15787342

申请日：2017-10-18

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: H01L21/02

CPC classification number: H01L21/02252 ,  H01L21/02118 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/0228

Abstract: Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including one or more deposition cycles including contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods a deposition cycle can also including contacting the substrate with a carbon precursor.

公开(公告)号：US09984869B1

公开(公告)日：2018-05-29

申请号：US15489660

申请日：2017-04-17

Applicant: ASM IP Holding B.V.

Inventor： Timothee Julien Vincent Blanquart

IPC: H01L21/02 ,  C23C16/505 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0234

Abstract: A method is for forming a nitride or oxide film by plasma-assisted cyclic deposition, one cycle of which includes: feeding a first reactant, a second reactant, and a precursor to a reaction space where a substrate is placed, wherein the second reactant flows at a first flow ratio wherein a flow ratio is defined as a ratio of a flow rate of the second reactant to a total flow rate of gases flowing in the reaction space; and stopping feeding the precursor while continuously feeding the first and second reactants at a flow ratio which is gradually reduced from the first flow ratio to a second flow ratio while applying RF power to the reaction space to expose the substrate to a plasma. The second reactant is constituted by a hydrogen-containing compound or oxygen-containing compound.

公开(公告)号：US09960072B2

公开(公告)日：2018-05-01

申请号：US15050159

申请日：2016-02-22

Applicant: ASM IP Holding B.V.

Inventor： Stephen Dale Coomer

IPC: H01L21/687 ,  H01L21/68

CPC classification number: H01L21/68742 ,  H01L21/68 ,  H01L21/68785 ,  H01L21/68792

Abstract: A vertical adjustment assembly is disclosed in order to provide for matching vertical positions of two substrates within separate chambers or cavities of a reaction system for processing of semiconductor substrates. The vertical adjustment assembly, in cooperation with a main lift driver, can provide for a more accurate positioning of the substrates to account for a tolerance stack-up error.

公开(公告)号：US09960033B1

公开(公告)日：2018-05-01

申请号：US15382081

申请日：2016-12-16

Applicant: ASM IP HOLDING B.V.

Inventor： Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/31116

Abstract: A method of filling recesses or grooves on a patterned surface with a layer of film, by combining depositing a film by PEALD/PPECVD on the patterned surface and etching the film, wherein the deposition and the etching are separately controlled, and wherein the conditions for deposition can be controlled by controlling RF power.