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    Three-dimensional semiconductor memory devices and methods of forming the same
    42.
    发明授权
    Three-dimensional semiconductor memory devices and methods of forming the same 有权
    三维半导体存储器件及其形成方法

    公开(公告)号：US09356033B2

    公开(公告)日：2016-05-31

    申请号：US14810845

    申请日：2015-07-28

    申请人： Yong-Hoon Son ,  Jung Ho Kim ,  Seungjae Baik ,  Myoungbum Lee ,  Kihyun Hwang

    发明人： Yong-Hoon Son ,  Jung Ho Kim ,  Seungjae Baik ,  Myoungbum Lee ,  Kihyun Hwang

    IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L27/115

    CPC分类号： H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582

    摘要： Nonvolatile memory devices include a string of nonvolatile memory cells on a substrate. This string of nonvolatile memory cells includes a first vertical stack of nonvolatile memory cells on the substrate and a string selection transistor on the first vertical stack of nonvolatile memory cells. A second vertical stack of nonvolatile memory cells is also provided on the substrate and a ground selection transistor is provided on the second vertical stack of nonvolatile memory cells. This second vertical stack of nonvolatile memory cells is provided adjacent the first vertical stack of nonvolatile memory cells. A conjunction doped semiconductor region is provided in the substrate. This conjunction doped region electrically connects the first vertical stack of nonvolatile memory cells in series with the second vertical stack of nonvolatile memory cells so that these stacks can operate as a single NAND-type string of memory cells.

    摘要翻译： 非易失性存储器件包括在衬底上的一串非易失性存储器单元。 这一串非易失性存储单元包括衬底上的非易失性存储单元的第一垂直堆叠和非易失性存储单元的第一垂直堆叠上的串选择晶体管。 第二垂直堆叠的非易失性存储单元也设置在衬底上，并且在非易失性存储单元的第二垂直堆叠上提供接地选择晶体管。 非易失性存储单元的第二垂直堆叠被提供为与非易失性存储单元的第一垂直堆叠相邻。 在衬底中提供连接掺杂半导体区域。 该连接掺杂区域将非易失性存储器单元的第一垂直堆叠与第二垂直堆叠的非易失性存储器单元电连接，使得这些堆叠可以作为单个NAND型存储器单元串工作。

    Nonvolatile memory devices including multiple charge trapping layers
    47.
    发明授权
    Nonvolatile memory devices including multiple charge trapping layers 有权
    包括多个电荷俘获层的非易失性存储器件

    公开(公告)号：US08426907B2

    公开(公告)日：2013-04-23

    申请号：US12612453

    申请日：2009-11-04

    申请人： Kwangmin Park ,  Juwan Lim ,  Seungjae Baik ,  Siyoung Choi ,  Kihyun Hwang ,  Juyul Lee

    发明人： Kwangmin Park ,  Juwan Lim ,  Seungjae Baik ,  Siyoung Choi ,  Kihyun Hwang ,  Juyul Lee

    IPC分类号： H01L29/792

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L27/11568

    摘要： A charge trap nonvolatile memory device includes a gate electrode on a substrate; a charge trapping layer between the substrate and the gate electrode; a charge tunneling layer between the charge trapping layer and the substrate; and a charge blocking layer between the gate electrode and the charge trapping layer. The charge trapping layer includes a first charge trapping layer having a first energy band gap and a second charge trapping layer having a second energy band gap that is different than the first energy band gap. The first and second charge trapping layers are repeatedly stacked and the first and second energy band gaps are smaller than energy band gaps of the charge tunneling layer and the charge blocking layer.

    摘要翻译： 电荷阱非易失性存储器件包括在衬底上的栅电极; 在基板和栅电极之间的电荷捕获层; 在电荷捕获层和衬底之间的电荷隧道层; 以及栅电极和电荷捕获层之间的电荷阻挡层。 电荷捕获层包括具有第一能带隙的第一电荷俘获层和具有不同于第一能带隙的第二能带隙的第二电荷俘获层。 第一和第二电荷捕获层被重复堆叠，并且第一和第二能带间隙小于电荷隧穿层和电荷阻挡层的能带隙。

    Semiconductor memory device and method of forming the same
    48.
    发明授权
    Semiconductor memory device and method of forming the same 有权
    半导体存储器件及其形成方法

    公开(公告)号：US08415742B2

    公开(公告)日：2013-04-09

    申请号：US13442804

    申请日：2012-04-09

    申请人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

    发明人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

    IPC分类号： H01L27/12 ,  H01L21/4763

    CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

    摘要： Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

    摘要翻译： 提供半导体存储器件和形成半导体存储器件的方法。 所述方法可以包括形成交替层叠在基板上的绝缘层和单元栅极层，通过连续图案化通过单元栅极层和绝缘层形成开口，并且在开口中的单元栅极层的侧壁上选择性地形成导电阻挡层 。

    Nonvolatile memory device having a fixed charge layer
    49.
    发明授权
    Nonvolatile memory device having a fixed charge layer 有权
    具有固定电荷层的非易失性存储器件

    公开(公告)号：US08283719B2

    公开(公告)日：2012-10-09

    申请号：US12894615

    申请日：2010-09-30

    申请人： ZongLiang Huo ,  Myoungbum Lee ,  Kihyun Hwang ,  Seungmok Shin ,  Sunjung Kim

    发明人： ZongLiang Huo ,  Myoungbum Lee ,  Kihyun Hwang ,  Seungmok Shin ,  Sunjung Kim

    IPC分类号： H01L29/792 ,  H01L29/788 ,  H01L29/76

    CPC分类号： H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/792 ,  H01L29/7926

    摘要： Provided are a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a stacked structure, a semiconductor pattern, an information storage layer, and a fixed charge layer. The stacked structure may be disposed over a semiconductor substrate. The stacked structure may include conductive patterns and interlayer dielectric patterns alternately stacked therein. The semiconductor pattern may be connected to the semiconductor substrate by passing through the stacked structure. The information storage layer may be disposed between the semiconductor pattern and the conductive patterns. The fixed charge layer may be disposed between the semiconductor pattern and the interlayer dielectric pattern. The fixed charge layer may include fixed charges. Electrical polarity of the fixed charges may be equal to electrical polarity of majority carriers of the semiconductor pattern.

    摘要翻译： 提供一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括堆叠结构，半导体图案，信息存储层和固定电荷层。 层叠结构可以设置在半导体衬底上。 层叠结构可以包括交替堆叠在其中的导电图案和层间电介质图案。 半导体图案可以通过层叠结构连接到半导体衬底。 信息存储层可以设置在半导体图案和导电图案之间。 固定电荷层可以设置在半导体图案和层间电介质图案之间。 固定电荷层可以包括固定电荷。 固定电荷的电极性可以等于半导体图案的多数载流子的电极性。

    Method for fabricating nonvolatile memory device
    50.
    发明授权
    Method for fabricating nonvolatile memory device 失效
    非易失性存储器件的制造方法

    公开(公告)号：US08236647B2

    公开(公告)日：2012-08-07

    申请号：US12461188

    申请日：2009-08-04

    申请人： Juyul Lee ,  Seungjae Baik ,  Kihyun Hwang ,  Siyoung Choi

    发明人： Juyul Lee ,  Seungjae Baik ,  Kihyun Hwang ,  Siyoung Choi

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11568 ,  H01L27/11565 ,  H01L27/11573

    摘要： Provided is a method for fabricating a nonvolatile memory device capable of improving charge retention characteristics. The method for fabricating a nonvolatile memory device includes forming a charge trapping layer with a memory region and a charge blocking region on a semiconductor substrate, and trapping charges in the charge blocking region of the charge trapping layer.

    摘要翻译： 提供一种制造能够改善电荷保持特性的非易失性存储器件的方法。 非易失性存储器件的制造方法包括在半导体衬底上形成具有存储区域和电荷阻挡区域的电荷俘获层，并且在电荷俘获层的电荷阻挡区域中俘获电荷。