公开(公告)号：US20130309772A1

公开(公告)日：2013-11-21

申请号：US13877225

申请日：2011-09-30

申请人： Keishi Sakaguchi ,  Rie Hamaguchi ,  Takanori Matsuda ,  Makoto Ito ,  Naoki Nagano ,  Masahiro Hayashi ,  Daisuke Honda ,  Yuji Okita ,  Shinichi Sugimoto

发明人： Keishi Sakaguchi ,  Rie Hamaguchi ,  Takanori Matsuda ,  Makoto Ito ,  Naoki Nagano ,  Masahiro Hayashi ,  Daisuke Honda ,  Yuji Okita ,  Shinichi Sugimoto

IPC分类号： C12N15/79 ,  C12N15/89

CPC分类号： C12N15/79 ,  C12N9/0071 ,  C12N9/0083 ,  C12N9/1029 ,  C12N15/113 ,  C12N15/52 ,  C12N15/895 ,  C12N2310/11 ,  C12N2310/14 ,  C12P7/6409 ,  C12P7/6427 ,  C12P7/6472 ,  C12Y114/19001 ,  C12Y114/19006 ,  C12Y203/01119

摘要： To provide a transformation method for producing a stramenopile organism having an improved unsaturated fatty acid production capability by disrupting a gene of the stramenopile organism or inhibiting the expression of the gene in a genetically engineering manner. [Solution] A method for transforming a stramenopile organism, which comprises disrupting a gene of the stramenopile organism or inhibiting the expression of the gene in a genetically engineering manner, and which is characterized in that the stramenopile organism is selected from Thraustochytrium aureum, Parietichytrium sarkarianum, Thraustochytrium roseum and Parietichytrium sp. and the gene to be disrupted or of which the expression is to be inhibited is a gene associated with the biosynthesis of a fatty acid.

摘要翻译： 提供通过以遗传工程方式破坏该层状生物体的基因或抑制该基因的表达来生产具有改善的不饱和脂肪酸生产能力的前烧石生物的转化方法。 [解决方案]一种转基因生物的方法，其包括以基因工程方式破坏所述地精生物体的基因或抑制所述基因的表达，其特征在于，所述前列腺生物体选自甲状腺破囊壶菌（Salisochytrium aureum），，鱼（Parietichytrium sarkarianum） ，玫瑰色胸，和Parietichytrium sp。 并且待破坏的基因或其表达被抑制的基因是与脂肪酸的生物合成相关的基因。

公开(公告)号：US08528717B2

公开(公告)日：2013-09-10

申请号：US12198532

申请日：2008-08-26

申请人： Yukio Ando ,  Masahiro Hayashi

发明人： Yukio Ando ,  Masahiro Hayashi

IPC分类号： B65G15/64

CPC分类号： B41J3/4078 ,  B41F17/005 ,  B41J3/28 ,  B41J11/06

摘要： A printing apparatus including a pallet configured to receive a print substrate, a conveyer system configured to convey the pallet, and a plurality of work mechanisms arranged along a pallet conveying direction of the conveyer system. The work mechanisms are configured to conduct processing operations to the print substrate. The conveyer system includes an upper conveyer mechanism configured to sequentially convey the pallet to respective working positions of the work mechanisms, and a lower conveyer mechanism arranged below and along the upper conveyer mechanism. The lower conveyer mechanism is configured to convey the pallet in a direction opposite to the pallet conveying direction of the upper conveyer mechanism so that the conveyer system is structured to have an upper stage and a lower stage.

摘要翻译： 一种打印装置，包括构造成接收打印基板的托盘，构造成输送托盘的输送器系统以及沿着输送器系统的托盘输送方向布置的多个工作机构。 工作机构被配置为对打印基板进行处理操作。 输送机系统包括上部输送机构，其构造成将托盘顺序地输送到工作机构的相应工作位置，以及下部输送机构，其布置在上部输送机构的下方并沿着该输送机构。 下输送机构构造成沿着与上输送机构的托盘输送方向相反的方向输送托盘，使得输送机系统被构造成具有上段和下段。

公开(公告)号：US20130206287A1

公开(公告)日：2013-08-15

申请号：US13816905

申请日：2011-08-15

申请人： Jun Sato ,  Shinya Imano ,  Mototsugu Osaki ,  Shigeki Ueta ,  Kiyohito Ishida ,  Toshihiro Omori ,  Hiroaki Nishida ,  Masahiro Hayashi ,  Tomoki Shiota

发明人： Jun Sato ,  Shinya Imano ,  Mototsugu Osaki ,  Shigeki Ueta ,  Kiyohito Ishida ,  Toshihiro Omori ,  Hiroaki Nishida ,  Masahiro Hayashi ,  Tomoki Shiota

IPC分类号： C22F1/10 ,  C22C30/00 ,  C22C19/05

CPC分类号： C22F1/10 ,  C22C19/055 ,  C22C19/056 ,  C22C19/057 ,  C22C30/00 ,  F01D5/28 ,  F05C2201/0463 ,  F05D2300/17 ,  Y02T50/671

摘要： A Co-based alloy containing not less than 0.001 mass % and less than 0.100 mass % of C, not less than 9.0 mass % and less than 20.0 mass % of Cr, not less than 2.0 mass % and less than 5.0 mass % of Al, not less than 13.0 mass % and less than 20.0 mass % of W, and not less than 39.0 mass % and less than 55.0 mass % of Ni, with the remainder being made up by Co and unavoidable impurities, wherein the contents of Mo, Nb, Ti and Ta which are included in the unavoidable impurities are as follows: Mo

摘要翻译： 含有不小于0.001质量％且小于0.100质量％的C，不小于9.0质量％且小于20.0质量％的Cr的Co基合金，不小于2.0质量％且小于5.0质量％的Al ，不小于13.0质量％且小于20.0质量％的W，不小于39.0质量％且小于55.0质量％的Ni，其余由Co和不可避免的杂质构成，其中Mo， 包含在不可避免的杂质中的Nb，Ti和Ta如下：Mo <0.010质量％，Nb <0.010质量％，Ti <0.010质量％，Ta <0.010质量％。

公开(公告)号：US08416822B2

公开(公告)日：2013-04-09

申请号：US13127531

申请日：2009-11-12

申请人： Hiroyoshi Shouji ,  Shunichi Sato ,  Toshihiro Ishii ,  Kengo Makita ,  Masahiro Hayashi ,  Toshihide Sasaki ,  Akihiro Itoh

发明人： Hiroyoshi Shouji ,  Shunichi Sato ,  Toshihiro Ishii ,  Kengo Makita ,  Masahiro Hayashi ,  Toshihide Sasaki ,  Akihiro Itoh

IPC分类号： H01S5/00

CPC分类号： H01S5/18361 ,  H01S5/0202 ,  H01S5/18311 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/173 ,  H01S2301/176

摘要： A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

摘要翻译： 一种制造表面发射激光器件的制造方法包括以下步骤：在基板上层压下反射镜，包括有源层的谐振器结构和具有选择性氧化层的上反射层的层叠体; 蚀刻层叠体以形成在其侧表面露出的选择性氧化层的台面结构; 从台面结构的侧面选择性地氧化选择氧化层，形成电流通过区被氧化物包围的收缩结构; 在远离台面结构的位置处形成分隔槽; 钝化形成分离槽时暴露的层叠体的至少一部分的最外表面; 并用绝缘体涂覆钝化部分。

公开(公告)号：US20130070039A1

公开(公告)日：2013-03-21

申请号：US13379160

申请日：2011-05-18

申请人： Kazuhiro Harasaka ,  Shunichi Sato ,  Masahiro Hayashi ,  Akihiro Itoh ,  Katsunari Hanaoka

发明人： Kazuhiro Harasaka ,  Shunichi Sato ,  Masahiro Hayashi ,  Akihiro Itoh ,  Katsunari Hanaoka

IPC分类号： B41J2/435 ,  G02B26/08 ,  H01S5/00

CPC分类号： G03G15/04 ,  B41J2/442 ,  B41J2/471 ,  G02B26/10 ,  H01S5/18 ,  H01S5/18313 ,  H01S5/18355 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/423

摘要： A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region.

摘要翻译： 表面发射激光器件包括设置在发射区域中并被配置为使得在周边部分处的反射率与发射区域中的中心部分的反射率不同的透明电介质层。 在表面发射激光器件中，接触层的厚度在具有较高反射率的区域和在发射区域中反射率相对较低的区域之间是不同的。 接触层设置在上层多层膜反射镜的高折射率层上，并且具有较低反射率的区域中的高折射率层和接触层的总光学厚度偏离了 从发射区域发射的激光的四分之一振荡波长。

公开(公告)号：US20130061799A1

公开(公告)日：2013-03-14

申请号：US13592555

申请日：2012-08-23

申请人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

发明人： Masahiro HAYASHI ,  Seiji SARAYAMA ,  Takashi SATOH ,  Hiroshi NAMBU ,  Chiharu KIMURA ,  Naoya MIYOSHI

IPC分类号： C30B19/02

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度L为9.7mm以上，c面的长度L与晶体直径d的比L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

公开(公告)号：US20120322116A1

公开(公告)日：2012-12-20

申请号：US13497894

申请日：2010-09-24

申请人： Keishi Sakaguchi ,  Takanori Matsuda ,  Takumi Kobayashi ,  Makoto Ito ,  Naoki Nagano ,  Masahiro Hayashi ,  Daisuke Honda ,  Yosuke Taoka ,  Yuji Okita ,  Hitoshi Izumida ,  Shinichi Sugimoto

发明人： Keishi Sakaguchi ,  Takanori Matsuda ,  Takumi Kobayashi ,  Makoto Ito ,  Naoki Nagano ,  Masahiro Hayashi ,  Daisuke Honda ,  Yosuke Taoka ,  Yuji Okita ,  Hitoshi Izumida ,  Shinichi Sugimoto

IPC分类号： C12P7/64 ,  C12N15/79

CPC分类号： C12P7/6409 ,  C11C3/00 ,  C12N9/0071 ,  C12N9/0083 ,  C12N15/79 ,  C12N15/8201 ,  C12N15/8247 ,  C12P7/6427

摘要： Disclosed is a transformation method whereby an ability to produce a useful substance of a stramenopile can be improved. The method for transforming a stramenopile comprises transferring a foreign gene into the stramenopile which is a microorganism belonging to the class Labyrinthula, more specifically, to a genus Labyrinthula, Altornia, Aplanochytrium, Schizochytrium, Aurantiochytrium, Thraustochytrium, Ulkenia, etc. Said foreign gene, which is a gene relating to tolerance against an antibiotic, a colorimetric protein and/or a fatty acid desaturase (Δ5 desaturase gene, Δ12 desaturase gene and/or ω3 desaturase gene), is transferred by using the electroporation or gene-gun technique.

摘要翻译： 公开了能够提高产生有机物的能力的转化方法。 用于转化stramenopile的方法包括将外源基因转移到作为属于Labyrinthula类的微生物的地幔中，更具体地是属于Labyrinthula，Altornia，Aplanochytrium，Schizochytrium，Aurantiochytrium，Thraustochytrium，Ulkenia等。所述外源基因， 其是与抗生素，比色蛋白质和/或脂肪酸去饱和酶（＆Dgr。5去饱和酶基因，＆Dgr; 12去饱和酶基因和/或ω3去饱和酶基因）的耐受相关的基因通过使用电穿孔或基因 - 枪技术。

公开(公告)号：US08294089B2

公开(公告)日：2012-10-23

申请号：US12407451

申请日：2009-03-19

申请人： Akio Suzuki ,  Etsuo Iizuka ,  Katsutoshi Nonaka ,  Masahiro Hayashi ,  Yuuya Washiyama

发明人： Akio Suzuki ,  Etsuo Iizuka ,  Katsutoshi Nonaka ,  Masahiro Hayashi ,  Yuuya Washiyama

IPC分类号： H01J49/40

CPC分类号： H01J49/025

摘要： In a charged particle detecting apparatus 100 for which an MCP is sandwiched with an IN electrode 1 and an OUT electrode and an anode electrode and a rear cover are installed therebehind, the component members in the rear of the IN electrode 1 are arranged further inside than the IN electrode 1 when viewed from an MCP incident surface, and the charged particle detecting apparatus 100 is fixed by screwing and the like to a cabinet wall surface 330 of a TOF-MS by using a flange portion provided at a part of IN electrode 1 projected further outside than the rear component members.

摘要翻译： 在其中MCP被夹在IN电极1和OUT电极以及阳极电极和后盖之间的带电粒子检测装置100中，IN电极1的后部的部件被布置在 从MCP入射表面观察IN电极1，并且带电粒子检测装置100通过使用设置在IN电极1的一部分的凸缘部分通过螺钉固定到TOF-MS的柜壁表面330 远远超过后部部件。

公开(公告)号：US20120033251A1

公开(公告)日：2012-02-09

申请号：US13137297

申请日：2011-08-04

申请人： Daisuke Okada ,  Noboru Tamura ,  Nobuhiro Shindo ,  Hideaki Matsui ,  Hajime Kubota ,  Yuto Shibata ,  Takeo Momose ,  Masahiro Hayashi

发明人： Daisuke Okada ,  Noboru Tamura ,  Nobuhiro Shindo ,  Hideaki Matsui ,  Hajime Kubota ,  Yuto Shibata ,  Takeo Momose ,  Masahiro Hayashi

IPC分类号： G06K15/02

CPC分类号： G06F3/1239 ,  G06F3/1212 ,  G06F3/1222 ,  G06F3/1267 ,  G06F3/1273 ,  G06F3/1274 ,  G06F3/1279

摘要： An image forming apparatus includes a receiving unit; a data saving unit; a drawing data generating unit; a log storage unit that stores a processing log; an image forming unit; and a data management unit. The data management unit, when the print job is analyzed as a time designated print job; causes the data generating unit to generate the drawing data; causes the data saving unit to save the drawing data; that, when analyzed printing being enabled at the designated print time, causes the image forming unit to perform image formation based on the drawing data and causes the log storage unit to store therein a processing log; and that, when printing is analyzed as disabled at the designated print time, performs processing corresponding to a print disabled state preset and causes the log storage unit to store therein a processing log about the processing.

摘要翻译： 图像形成装置包括：接收单元; 数据保存单元; 绘图数据生成单元; 存储处理日志的日志存储单元; 图像形成单元; 和数据管理单元。 当打印作业被分析为时间指定打印作业时，数据管理单元; 使数据生成单元生成绘图数据; 使数据保存单元保存绘图数据; 当在指定的打印时间分析打印被启用时，使图像形成单元基于绘图数据执行图像形成，并使日志存储单元在其中存储处理日志; 并且当在指定的打印时间将打印分析为禁用时，执行与打印禁用状态预设相对应的处理，并使日志存储单元在其中存储关于处理的处理日志。

公开(公告)号：US20100276762A1

公开(公告)日：2010-11-04

申请号：US12836826

申请日：2010-07-15

申请人： Masahiro HAYASHI ,  Takahisa AKIBA ,  Kunio WATANABE ,  Tomo TAKASO ,  Susumu KENMOCHI

发明人： Masahiro HAYASHI ,  Takahisa AKIBA ,  Kunio WATANABE ,  Tomo TAKASO ,  Susumu KENMOCHI

IPC分类号： H01L29/78

CPC分类号： H01L29/7834 ,  H01L23/5225 ,  H01L23/585 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/1083 ,  H01L29/402 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.

摘要翻译： 一种半导体器件，包括：半导体层; 栅极绝缘层; 栅电极; 一个通道区域 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层，其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层，其中当从所述顶侧观察时，所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中，所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上，所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。