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公开(公告)号：US20150109814A1
公开(公告)日：2015-04-23
申请号：US14515814
申请日：2014-10-16
Applicant: NANOSYS, INC.
Inventor： Jian CHEN , Robert S. Dubrow , Steven Gensler , Jason Hartlove , Ernest Lee , Robert Edward Wilson
CPC classification number: G02B6/0073 , G02B6/005 , G02F1/133615 , G02F2001/133614 , H01L33/502
Abstract: Disclosed teem are display systems comprising light-emitting, diodes (LEDs), suitably blue light LEDs, which demonstrate increased optical power output. In embodiments, the display systems include compositions comprising phosphors, including luminescent nanocrystals.
Abstract translation: 公开的显示器是包括发光二极管（LED），适当的蓝光LED的显示系统，其表现出增加的光功率输出。 在实施方案中，显示系统包括包含荧光体（包括发光纳米晶体）的组合物。
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42.发明公开公开(公告)号：US20240113084A1
公开(公告)日：2024-04-04
申请号：US18471517
申请日：2023-09-21
Applicant: NANOSYS, INC.
Inventor： Brian KIM
IPC: H01L25/075 , H01L27/12 , H01L33/48 , H01L33/54 , H01L33/58 , H01L33/62 , H10K50/86 , H10K59/00 , H10K59/12
CPC classification number: H01L25/0753 , H01L27/1214 , H01L33/483 , H01L33/54 , H01L33/58 , H01L33/62 , H10K50/865 , H10K59/00 , H10K59/12 , H01L25/167 , H01L2933/005 , H01L2933/0058 , H01L2933/0066
Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a front side of the backplane, a transparent conductive layer contacting front side surfaces of the light emitting diodes, an optical bonding layer located over a front side surface of the transparent conductive layer, a transparent cover plate located over a front side surface of the optical bonding layer, and a black matrix layer including an array of openings therethrough, and located between the optical bonding layer and the transparent cover plate.
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43.发明公开公开(公告)号：US20240101900A1
公开(公告)日：2024-03-28
申请号：US18119584
申请日：2023-03-09
Applicant: Nanosys, Inc.
Inventor： John CURLEY , Chunming WANG , Jay YAMANAGA , Xiaofeng ZHANG , Christian IPPEN
IPC: C09K11/88 , C09K11/08 , G02F1/13357 , H01L33/50 , H10K59/40
CPC classification number: C09K11/883 , C09K11/0883 , G02F1/1336 , H01L33/502 , H10K59/40 , B82Y20/00
Abstract: The invention relates to highly luminescent nanostructures with improved blue light absorbance, particularly core/shell nanostructures comprising a ZnSe core and InP and/or ZnS shell layers. The invention also relates to methods of producing such nanostructures.
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公开(公告)号：US11908974B2
公开(公告)日：2024-02-20
申请号：US17583867
申请日：2022-01-25
Applicant: NANOSYS, INC.
Inventor： Max Batres , Fariba Danesh , Michael J. Cich , Zhen Chen
IPC: H01L33/32 , H01L33/00 , H01L33/46 , H01L25/075
CPC classification number: H01L33/325 , H01L25/0753 , H01L33/0075 , H01L33/46
Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.
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公开(公告)号：US20230387350A1
公开(公告)日：2023-11-30
申请号：US18187516
申请日：2023-03-21
Applicant: NANOSYS, INC.
Inventor： Fariba DANESH , Richard P. SCHNEIDER , Fan REN , Michael JANSEN , Nathan GARDNER
IPC: H01L33/32 , H01L25/00 , H01L25/075 , H01L33/42 , H01L33/62 , H01L33/06 , H01L33/24 , H01L33/60 , H01L33/00
CPC classification number: H01L33/32 , H01L25/50 , H01L25/0753 , H01L33/42 , H01L33/62 , H01L33/06 , H01L33/24 , H01L33/60 , H01L33/0095 , H01L2224/16225 , H01L2224/95
Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer, and a GaN barrier layer located on the aluminum gallium nitride layer.
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Patent Agency Ranking
公开(公告)号：US11784176B2
公开(公告)日：2023-10-10
申请号：US17818822
申请日：2022-08-10
Applicant: NANOSYS, INC.
IPC: H01L25/16 , H01L33/40 , H01L33/62 , H01L33/56 , H01L33/12 , H01L33/06 , H01L33/32 , H01L33/24 , H01L33/08 , H01L33/00
CPC classification number: H01L25/167 , H01L33/0025 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/24 , H01L33/32 , H01L33/405 , H01L33/56 , H01L33/62 , H01L2933/005 , H01L2933/0066
Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.
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公开(公告)号：US20230235225A1
公开(公告)日：2023-07-27
申请号：US18084272
申请日：2022-12-19
Applicant: Nanosys, Inc.
Inventor： Christian IPPEN , Donald ZEHNDER , Ruiqing MA
IPC: C09K11/88 , C08G65/26 , C09D11/36 , C09D11/38 , C09K11/02 , C09K11/70 , C09D5/22 , H10K30/35 , H10K71/60
CPC classification number: C09K11/883 , C08G65/2609 , C09D11/36 , C09D11/38 , C09K11/025 , C09K11/70 , C09D5/22 , H10K30/35 , H10K71/611 , B82Y20/00
Abstract: The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.
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48.发明公开公开(公告)号：US20230235224A1
公开(公告)日：2023-07-27
申请号：US17973958
申请日：2022-10-26
Applicant: NANOSYS, INC.
Inventor： Benjamin NEWMEYER , Christian IPPEN , Ruiqing MA
CPC classification number: C09K11/883 , H01L33/005 , H01L33/06 , H01L33/502 , B82Y20/00
Abstract: The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.
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公开(公告)号：US20230229087A1
公开(公告)日：2023-07-20
申请号：US18098167
申请日：2023-01-18
Applicant: Nanosys, Inc.
Inventor： Christian IPPEN , Diego BARRERA , Ruiqing MA
CPC classification number: G03F7/2004 , H10K50/115 , G03F7/029 , G03F7/0048 , G03F7/16 , G03F7/325 , H10K71/233
Abstract: Provided are patterned films comprising nanostructures and one or more UV-cured monomers. Also provide are methods of making the patterned films, and electroluminescent devices comprising the patterned films.
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50.发明公开公开(公告)号：US20230163262A1
公开(公告)日：2023-05-25
申请号：US18057353
申请日：2022-11-21
Applicant: NANOSYS, INC.
Inventor： Homer ANTONIADIS
CPC classification number: H01L33/58 , G02B3/0037 , G02B1/002 , H01L25/167 , G02B2207/101 , H01L33/32
Abstract: A light emitting device includes a backplane, first, second and third light emitting diodes located on the backplane, a first patterned metamaterial lens containing first nanostructures located over the first light emitting diode, a second patterned metamaterial lens containing second nanostructures located over the second light emitting diode, and a third patterned metamaterial lens containing third nanostructures located over the light emitting diode. A configuration of the first nanostructures differs from a configuration of the second nanostructures, and a configuration of the third nanostructures differs from the configurations of the first and the second nanostructures.
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