公开(公告)号：US20150299050A1

公开(公告)日：2015-10-22

申请号：US14789915

申请日：2015-07-01

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Ren-Guan Duan ,  Sumit Agarwal ,  Dmitry Lubomirsky

IPC: C04B35/505 ,  C04B35/622 ,  C04B35/626 ,  C23C4/12

CPC classification number: C04B35/505 ,  B32B18/00 ,  C04B35/62222 ,  C04B35/62665 ,  C04B35/62675 ,  C04B41/009 ,  C04B41/4545 ,  C04B41/5045 ,  C04B41/87 ,  C23C4/134 ,  Y10T428/24562 ,  C04B35/00 ,  C04B35/10 ,  C04B41/4527 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/53

Abstract: To manufacture a ceramic article, a ceramic body comprising Al2O3 is roughened to a roughness of approximately 140 micro-inches (μin) to 240 μin. The ceramic body is subsequently cleaned and then coated with a ceramic coating. The ceramic coating comprises a compound of Y4Al2O9 (YAM) and a solid solution of Y2-xZrxO3. The ceramic coating is then polished.

Abstract translation: 为了制造陶瓷制品，将包含Al 2 O 3的陶瓷体粗糙化至约140微英寸（μin）至240μin的粗糙度。 随后清洁陶瓷体，然后用陶瓷涂层涂覆。 陶瓷涂层包含Y4Al2O9（YAM）的化合物和Y2-xZrxO3的固溶体。 然后抛光陶瓷涂层。

公开(公告)号：US20150158775A1

公开(公告)日：2015-06-11

申请号：US14562339

申请日：2014-12-05

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C04B41/50 ,  C23C14/22 ,  C04B41/00

CPC classification number: C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

Abstract translation: 制造制品的方法包括提供用于蚀刻反应器的部件。 然后进行离子辅助沉积（IBS-IAD）的离子束溅射，以在组件的至少一个表面上沉积保护层，其中保护层是厚度小于1000μm的耐等离子体膜。

公开(公告)号：US20150079370A1

公开(公告)日：2015-03-19

申请号：US14462057

申请日：2014-08-18

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Yikai Chen ,  Biraja P. Kanungo

IPC: C23C4/12 ,  C23C4/10

CPC classification number: H01J37/32495 ,  C23C4/10 ,  C23C4/11 ,  C23C4/134 ,  C23C4/18 ,  H01J37/32477 ,  Y10T428/24967 ,  Y10T428/249981

Abstract: A method of plasma spraying an article comprises inserting the article into a vacuum chamber for a low pressure plasma spraying system. A low pressure plasma spray process is then performed by the low pressure plasma spraying system to form a first plasma resistant layer having a thickness of 20-500 microns and a porosity of over 1%. A plasma spray thin film, plasma spray chemical vapor deposition or plasma spray physical vapor deposition process is then performed by the low pressure plasma spraying system to deposit a second plasma resistant layer on the first plasma resistant layer, the second plasma resistant layer having a thickness of less than 50 microns and a porosity of less than 1%.

Abstract translation: 等离子体喷涂物品的方法包括将物品插入用于低压等离子喷涂系统的真空室中。 然后通过低压等离子体喷涂系统进行低压等离子体喷涂工艺，以形成厚度为20-500微米，孔隙率超过1％的第一耐等离子体层。 然后通过低压等离子体喷涂系统进行等离子体喷涂薄膜，等离子体喷涂化学气相沉积或等离子体喷涂物理气相沉积工艺，以在第一耐等离子体层上沉积第二等离子体层，第二耐等离子体层具有厚度 小于50微米，孔隙率小于1％。

公开(公告)号：US20150021324A1

公开(公告)日：2015-01-22

申请号：US14034315

申请日：2013-09-23

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01J37/32 ,  B65D43/02

CPC classification number: H01L21/67023 ,  B65D43/02 ,  C23C4/01 ,  C23C4/04 ,  C23C4/10 ,  C23C4/11 ,  C23C4/12 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/0015 ,  C23C14/0021 ,  C23C14/0031 ,  C23C14/0036 ,  C23C14/0052 ,  C23C14/0084 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/088 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32513 ,  H01J2237/334 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/139 ,  Y10T428/1393

Abstract: A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less.

Abstract translation: 制造制品的方法包括提供用于蚀刻反应器的盖或喷嘴。 然后进行离子辅助沉积（IAD）以在盖或喷嘴的至少一个表面上沉积保护层，其中保护层是具有小于300μm的厚度的等离子体耐受稀土氧化物膜，平均表面粗糙度 为10微英寸或更小。

公开(公告)号：US20140363596A1

公开(公告)日：2014-12-11

申请号：US13954808

申请日：2013-07-30

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Tom Cho

IPC: C23C16/44

CPC classification number: H01J37/32495 ,  C04B41/009 ,  C04B41/5045 ,  C04B41/87 ,  C23C4/11 ,  C23C4/134 ,  C23C16/4404 ,  Y10T428/131 ,  Y10T428/26 ,  C04B35/00 ,  C04B35/10 ,  C04B35/581 ,  C04B41/4527 ,  C04B41/5031 ,  C04B41/5042

Abstract: An article includes a body that is coated with a ceramic coating. The ceramic coating may include Y2O3 in a range between about 45 mol % to about 99 mol %, ZrO2 in a range between about 0 mol % to about 55 mol %, and Al2O3 in a range between about 0 mol % to about 10 mol %. The ceramic coating may alternatively include Y2O3 in a range between about 30 mol % to about 60 mol %, ZrO2 in a range between about 0 mol % to about 20 mol %, and Al2O3 in a range between about 30 mol % to about 60 mol %.

Abstract translation: 一种制品包括涂有陶瓷涂层的主体。 陶瓷涂层可以包括约45mol％至约99mol％范围内的Y 2 O 3，约0mol％至约55mol％范围内的ZrO 2和约0mol％至约10mol％范围内的Al 2 O 3， 。 陶瓷涂层可以替代地包括约30mol％至约60mol％范围内的Y 2 O 3，约0mol％至约20mol％范围内的ZrO 2和约30mol％至约60mol之间的Al 2 O 3 ％。

公开(公告)号：US20140030533A1

公开(公告)日：2014-01-30

申请号：US13759525

申请日：2013-02-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Dmirty Lubomirsky ,  Vahid Fioruzdor

IPC: B05D3/14 ,  H01L21/67

CPC classification number: B05D3/147 ,  C23C18/1216 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1295 ,  H01J37/32477 ,  H01L21/67

Abstract: To manufacture a coating for an article for a semiconductor processing chamber, the coating is applied to the article by a method including applying a sol-gel coating of Y2O3 over the article, and curing the sol-gel coating on the article by heating the article with the sol-gel coating and exposing the article with the sol-gel coating to plasma in a semiconductor manufacturing chamber.

Abstract translation: 为了制造用于半导体处理室的制品的涂层，通过包括在制品上施加Y 2 O 3的溶胶 - 凝胶涂层并且通过加热制品来固化制品上的溶胶 - 凝胶涂层的方法将涂层施加到制品上 用溶胶 - 凝胶涂层并将溶胶 - 凝胶涂层的物品暴露于半导体制造室中的等离子体。

公开(公告)号：US20130284373A1

公开(公告)日：2013-10-31

申请号：US13687512

申请日：2012-11-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Ren-Guan Duan ,  Hamid Noobakhsh ,  Junhan Yuh ,  Dmitry Lubomirsky

IPC: C23F1/08 ,  B23K10/00 ,  H05K1/05 ,  B05D3/00

CPC classification number: C23F1/08 ,  B05D3/002 ,  B23K10/00 ,  B32B18/00 ,  C04B5/00 ,  C04B7/32 ,  C04B18/023 ,  C04B28/06 ,  C04B35/44 ,  C04B41/009 ,  C04B41/50 ,  C04B41/5045 ,  C04B41/87 ,  C22C29/12 ,  C22C32/00 ,  C22C32/0015 ,  C22C32/0021 ,  C22C32/0026 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32495 ,  H05K1/053

Abstract: To manufacture a ceramic coated article, at least one surface of a conductive article is roughened to a roughness of approximately 100 micro-inches (μin) to approximately 300 μin. The conductive article may then be heated and coated with a ceramic coating comprising a yttrium containing oxide to a thickness of approximately 10-40 mil.

Abstract translation: 为了制造陶瓷涂层制品，将导电制品的至少一个表面粗糙化至约100微英寸（μin）至约300μm的粗糙度。 然后可以将导电制品加热并用包含含钇的氧化物的陶瓷涂层涂覆至约10-40密耳的厚度。

公开(公告)号：US20130216821A1

公开(公告)日：2013-08-22

申请号：US13745589

申请日：2013-01-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Biraja P. Kanungo ,  Dmitry Lubomirsky

IPC: C04B41/00 ,  C04B41/80

CPC classification number: C04B41/87 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/5025 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/80 ,  C04B41/89 ,  Y10T428/249988 ,  Y10T428/265 ,  C04B35/00 ,  C04B35/10 ,  C04B41/4556

Abstract: A ceramic article having a ceramic substrate and a ceramic coating with an initial porosity and an initial amount of cracking is provided. The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate, wherein after the heat treatment the ceramic coating has a reduced porosity and a reduced amount of cracking.

Abstract translation: 提供具有陶瓷基底和具有初始孔隙率和初始裂纹量的陶瓷涂层的陶瓷制品。 陶瓷制品以约0.1℃/分钟至约20℃/分钟的升温速率加热至约1000℃至约1800℃的温度范围。 陶瓷制品在一个或多个温度范围内在高达约24小时的持续时间内进行热处理。 然后将陶瓷制品以升高速度冷却，其中在热处理后，陶瓷涂层具有降低的孔隙率和减少的开裂量。

公开(公告)号：US20240420984A1

公开(公告)日：2024-12-19

申请号：US18210328

申请日：2023-06-15

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Tom K. Cho ,  Jennifer Y. Sun ,  Xue Yang Chang

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/673

Abstract: An electrostatic chuck (ESC) including a ceramic body having a first surface with two or more regions defined on the first surface arranged concentrically with respect to each other on the first surface. Each region includes a retaining ring arranged on the first surface and defining an outer edge of the region, and structures arranged on the first surface and within the region configured to support a surface of a substrate when the substrate is retained by the electrostatic chuck. The ESC includes gas conduits configured to introduce a gas into the two or more regions through the ceramic body and to the first surface, and embedded electrodes within the ceramic body and arranged with respect to the first surface and configured to generate a retaining force on the surface of the substrate.

公开(公告)号：US11702744B2

公开(公告)日：2023-07-18

申请号：US17673345

申请日：2022-02-16

Applicant: Applied Materials, Inc.

Inventor： Nitin Deepak ,  Gayatri Natu ,  Albert Barrett Hicks, III ,  Prerna Sonthalia Goradia ,  Jennifer Y. Sun

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45553 ,  C23C16/30

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.