公开(公告)号：US20170338134A1

公开(公告)日：2017-11-23

申请号：US15159530

申请日：2016-05-19

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/324

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32513 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/6719

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US20160189933A1

公开(公告)日：2016-06-30

申请号：US15063849

申请日：2016-03-08

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

公开(公告)号：US09355922B2

公开(公告)日：2016-05-31

申请号：US14514213

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67253 ,  H01L22/26

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

Abstract translation: 调节等离子体源的内表面的方法包括将第一源气体流入等离子体源的等离子体产生腔中，所述等离子体源至少部分地被内表面封闭。 在将功率发射到等离子体产生腔中时，第一源气体点燃以形成第一等离子体，产生第一等离子体产物，其部分粘附到内表面。 该方法还包括使第一等离子体产物从等离子体产生腔流出到处理室，其中工件被第一等离子体产物处理，使第二源气体流入等离子体产生腔。 在将功率发射到等离子体产生腔中时，第二源气体点燃以形成第二等离子体，产生至少部分地从内表面去除第一等离子体产物的部分的第二等离子体产物。

公开(公告)号：US20150155189A1

公开(公告)日：2015-06-04

申请号：US14230237

申请日：2014-03-31

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Yi-Heng Sen ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32036 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32541 ,  H01L21/3065

Abstract: Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.

Abstract translation: 描述了控制施加到远程等离子体的电容等离子体功率极性的方法。 不是施加包括正电压和负电压均等摆动的等离子体功率，而是施加电容性等离子体功率，其有利于正或负电压摆幅，以便选择期望的工艺属性。 例如，可以通过在电极和多孔板之间施加单极振荡电压来形成等离子体功率。 单极振荡电压在电极和多孔板之间可能仅具有正电压或仅负电压。 单极振荡电压可能在其振荡电压的某些部分交叉电接地。

公开(公告)号：US20150132968A1

公开(公告)日：2015-05-14

申请号：US14602835

申请日：2015-01-22

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

公开(公告)号：US20150129546A1

公开(公告)日：2015-05-14

申请号：US14513517

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: C23F1/12 ,  C23F1/02

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 在实施例中，没有等离子体远程地或局部地激发含卤素的前体。

公开(公告)号：US11972930B2

公开(公告)日：2024-04-30

申请号：US17542781

申请日：2021-12-06

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32293 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/32935 ,  H01J2237/334

Abstract: A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

公开(公告)号：US11728139B2

公开(公告)日：2023-08-15

申请号：US17219360

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01J37/32357 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/311 ,  H01L21/67069 ,  H01L21/6831

Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

公开(公告)号：US11562890B2

公开(公告)日：2023-01-24

申请号：US16212580

申请日：2018-12-06

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xiao Ming He ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Laksheswar Kalita ,  Soonam Park

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46

Abstract: A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

公开(公告)号：US10920319B2

公开(公告)日：2021-02-16

申请号：US16245698

申请日：2019-01-11

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.