公开(公告)号：US09704717B2

公开(公告)日：2017-07-11

申请号：US14825921

申请日：2015-08-13

Applicant: APPLIED Materials, Inc.

Inventor： John W. Lam ,  Ismail Emesh ,  Roey Shaviv

IPC: H01L21/44 ,  H01L21/288 ,  H01L21/768 ,  C25D7/12 ,  H01L21/324 ,  H01L23/532 ,  C25D3/12 ,  C25D5/10 ,  C25D5/14 ,  C25D5/50

CPC classification number: H01L21/2885 ,  C23C18/1653 ,  C25D3/12 ,  C25D5/10 ,  C25D5/14 ,  C25D5/50 ,  C25D7/00 ,  C25D7/123 ,  H01L21/3247 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles.

公开(公告)号：US09496145B2

公开(公告)日：2016-11-15

申请号：US14219940

申请日：2014-03-19

Applicant: APPLIED Materials, Inc.

Inventor： John W. Lam ,  Ismail Emesh ,  Roey Shaviv

IPC: H01L21/44 ,  H01L21/288 ,  H01L21/768 ,  C25D7/12 ,  H01L21/324 ,  H01L23/532

CPC classification number: H01L21/2885 ,  C23C18/1653 ,  C25D3/12 ,  C25D5/10 ,  C25D5/14 ,  C25D5/50 ,  C25D7/00 ,  C25D7/123 ,  H01L21/3247 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles.

Abstract translation: 用于将导电膜施加到具有种子层的基底上的电化学方法包括将基底与包含钴或镍的电化学镀浴接触，镀浴的pH为4.0至9.0。 电流通过熔池传导到基板。 浴中的钴或镍离子沉积到种子层上。 电镀浴可能含有氯化钴和甘氨酸。 电流可以为1-50毫安每平方厘米。 电化学工艺完成后，可以将基板从镀液中除去，漂洗并干燥，然后在200-400℃的温度下退火，以改善材料性能并减少接缝线缺陷。 电镀和退火工艺可以通过多个循环进行。

公开(公告)号：US20160240405A1

公开(公告)日：2016-08-18

申请号：US14620420

申请日：2015-02-12

Applicant: APPLIED Materials, Inc.

Inventor： Vincent Steffan Francischetti ,  Robert B. Moore ,  Mario David Silvetti ,  Roey Shaviv

IPC: H01L21/67 ,  H01L21/677 ,  B25J11/00

CPC classification number: H01L21/67017 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67769 ,  H01L21/68707

Abstract: A high throughput stand-alone anneal system has a horizontal row of docking stations at a front wall of an enclosure. A rack in the enclosure has a plurality of vertically stacked anneal modules. Robots within the enclosure move wafers from the docking stations to one of the anneal modules for rapid thermal anneal processing.

Abstract translation: 高通量的独立退火系统在外壳的前壁上具有一排水平的对接站。 机壳中的机架具有多个垂直堆叠的退火模块。 外壳内的机器人将晶片从对接站移动到退火模块之一，用于快速热退火处理。

公开(公告)号：US20150348826A1

公开(公告)日：2015-12-03

申请号：US14292385

申请日：2014-05-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Roey Shaviv ,  Ismail T. Emesh ,  Dimitrios Argyris

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  C25D3/38 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes obtaining a workpiece including a dielectric surface; forming a barrier layer on the dielectric surface; depositing a seed layer on the barrier layer, wherein the barrier and seed stack includes at least one metal having a standard electrode potential of less than 0.34 V; and depositing a metallization layer on the seed layer using a diluted acid bath in a pH range of about 1 to about 5 and a current density in the range of about 10 mA/cm2 to about 30 mA/cm2.

Abstract translation: 根据本公开的一个实施例，用于在工件上的反应性金属膜上沉积金属的方法包括获得包括电介质表面的工件; 在电介质表面上形成阻挡层; 在阻挡层上沉积种子层，其中所述势垒和种子堆叠包括至少一种具有小于0.34V的标准电极电位的金属; 以及使用在约1至约5的pH范围内的电流密度和约10mA / cm 2至约30mA / cm 2范围内的电流密度的稀酸浴，在种子层上沉积金属化层。

公开(公告)号：US20150322587A1

公开(公告)日：2015-11-12

申请号：US14707980

申请日：2015-05-08

Applicant: APPLIED Materials, Inc.

Inventor： Chris Pabelico ,  Roey Shaviv ,  John L. Klocke ,  Ismail T. Emesh

IPC: C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/76882 ,  C25D3/12 ,  C25D3/38 ,  C25D5/10 ,  C25D5/12 ,  C25D5/50 ,  C25D5/505 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L2221/1089

Abstract: A method for at least partially filling a feature on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 13, an organic additive, and first and second metal complexing agents.

Abstract translation: 一种用于至少部分地填充工件上的特征的方法包括使用具有至少一个电镀金属离子，pH范围为约6至约13的电镀电解质，有机物，电化学沉积金属化层在形成在工件上的种子层上电化学沉积金属化层 添加剂，第一和第二金属络合剂。

公开(公告)号：US11948885B2

公开(公告)日：2024-04-02

申请号：US17356717

申请日：2021-06-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Suketu A. Parikh ,  Rong Tao ,  Roey Shaviv ,  Joung Joo Lee ,  Seshadri Ganguli ,  Shirish Pethe ,  David Gage ,  Jianshe Tang ,  Michael A Stolfi

IPC: H01L23/528 ,  H01L21/02 ,  H01L21/321 ,  H01L21/67 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/02063 ,  H01L21/32125 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

公开(公告)号：US11692261B2

公开(公告)日：2023-07-04

申请号：US16923600

申请日：2020-07-08

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Roey Shaviv ,  Satish Radhakrishnan

IPC: C23C14/24 ,  C23C14/04 ,  C23C14/50 ,  C23C16/455

CPC classification number: C23C14/24 ,  C23C14/042 ,  C23C14/505 ,  C23C16/45565

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

公开(公告)号：US11637004B2

公开(公告)日：2023-04-25

申请号：US16848614

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Michael P. Karazim ,  Andrew J. Constant ,  Jeffrey A. Brodine ,  Kim Ramkumar Vellore ,  Kevin Moraes ,  Roey Shaviv

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/04 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68

Abstract: An alignment module for housing and cleaning masks. The alignment module comprises a mask stocker, a cleaning chamber, an alignment chamber, an alignment stage a transfer robot. The mask stocker is configured to house a mask cassette configured to store a plurality of masks. The cleaning chamber is configured to clean the plurality of masks by providing one or more cleaning gases into a chamber after a mask is inserted into the cleaning chamber. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer a mask from one or more of the alignment stage and the mask stocker to the cleaning chamber.

公开(公告)号：US11505863B2

公开(公告)日：2022-11-22

申请号：US16854893

申请日：2020-04-21

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Roey Shaviv ,  Prashanth Kothnur ,  Satish Radhakrishnan ,  Xiaozhou Che

IPC: C23C16/448 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C14/00 ,  C23C16/00

Abstract: Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

公开(公告)号：US11414740B2

公开(公告)日：2022-08-16

申请号：US16864949

申请日：2020-05-01

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Roey Shaviv ,  Michael P. Karazim ,  Kevin Vincent Moraes ,  Steven V. Sansoni ,  Andrew J. Constant ,  Jeffrey Allen Brodine ,  Kim Ramkumar Vellore ,  Amikam Sade ,  Niranjan Kumar

IPC: C23C14/04 ,  C23C14/02 ,  C23C14/08 ,  H01L51/00 ,  C23C14/12 ,  H01L51/44

Abstract: Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.