Polarized semiconductor light emitting device
    41.
    发明授权
    Polarized semiconductor light emitting device 失效
    极化半导体发光器件

    公开(公告)号:US07408201B2

    公开(公告)日:2008-08-05

    申请号:US10804314

    申请日:2004-03-19

    IPC分类号: G02F1/133

    摘要: A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.

    摘要翻译: 发光器件包括发光二极管(LED),诸如复合抛物面聚光器的聚光元件,以及诸如荧光体的波长转换材料。 集中器元件从LED接收光,并从出射表面发射光,该出射表面小于入射面。 波长转换材料例如设置在出射表面上。 即使波长转换材料具有各向同性的再发射光,发光二极管的辐射也被保留或增加。 在一个实施例中,来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。 在另一个实施例中,来自两个偏振LED的正交偏振光例如经由偏振分束器组合,并被提供给诸如微显示器之类的非偏振光学系统。 如果需要,可以在分束器和微显示器之间设置集中器元件。

    Light emitting diode device that emits white light
    42.
    发明授权
    Light emitting diode device that emits white light 有权
    发出白光的发光二极管装置

    公开(公告)号:US06603258B1

    公开(公告)日:2003-08-05

    申请号:US09556770

    申请日:2000-04-24

    IPC分类号: H01J154

    CPC分类号: H01L33/50 H01L33/08

    摘要: A white-light emitting diode (LED) is provided that emits primary light at a wavelength that is in the range of 485 to 515 nanometers (nm), which corresponds to a bluish-green color. A portion of the primary light is converted into a reddish-colored light that ranges in wavelength from approximately 600 to approximately 620 nm. At least a portion of the converted light combines with the unconverted portion of the primary light to produce white light. A number of phosphor-converting elements are suitable for use with the LED, including a resin admixed with a phosphor powder, epoxies admixed with a phosphor powder, organic luminescent dyes, phosphor-converting thin films and phosphor-converting substrates. Preferably, the phosphor-converting element is a resin admixed with a phosphor powder in such a manner that a portion of the primary light impinging on the resin is converted into the reddish-colored light and a portion of the primary light passes through the resin without being converted. The unconverted primary light and the phosphor-converted reddish-colored light combine to produce white light. The LED is mounted in a reflector cup that is filled with the phosphor-converting resin. The LED may be mounted in either a normal or flip-chip configuration within the reflector cup.

    摘要翻译: 提供一种白光发光二极管(LED),其发射波长在485至515纳米(nm)范围内的初级光,其对应于蓝绿色。 初级光的一部分被转换成波长从大约600nm到大约620nm的红色光。 转换的光的至少一部分与初级光的未转换部分组合以产生白光。 许多荧光体转换元件适用于LED,包括与荧光体粉末混合的树脂,与荧光体粉末混合的环氧树脂,有机发光染料,磷光体转换薄膜和磷光体转换基板。 优选地,磷光体转换元件是与荧光体粉末混合的树脂,使得入射到树脂上的初级光的一部分被转换成红色的光,并且一部分一次光通过树脂而没有 被转换。 未转换的初级光和磷光体转换的红色光结合产生白光。 LED安装在填充有磷光体转换树脂的反射杯中。 LED可以以反射杯内的正常或倒装芯片配置安装。

    Semiconductor light emitting devices
    44.
    发明授权
    Semiconductor light emitting devices 有权
    半导体发光器件

    公开(公告)号:US06847057B1

    公开(公告)日:2005-01-25

    申请号:US10633058

    申请日:2003-08-01

    摘要: A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

    摘要翻译: III族氮化物器件包括第一n型层,第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成,对有源区域发射的光的反射率大于75%的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层,或者形成在与器件层相对的生长衬底的表面上。

    Blue backlight and phosphor layer for a color LCD
    45.
    发明授权
    Blue backlight and phosphor layer for a color LCD 有权
    蓝色背光和荧光粉层用于彩色液晶显示器

    公开(公告)号:US06844903B2

    公开(公告)日:2005-01-18

    申请号:US09827023

    申请日:2001-04-04

    CPC分类号: G02F1/133617 G02F1/133621

    摘要: A color, transmissive LCD uses a backlight that supplies a uniform blue light to the back of the liquid crystal layer in an LCD. The blue light, after being modulated by the liquid crystal layer, is then incident on the back surface of phosphor material located above the liquid crystal layer. A first phosphor material, when irradiated with the blue light, generates red light for the red pixel areas of the display, and a second phosphor material, when irradiated with the blue light, generates green light for the green pixel areas of the display. No phosphor is deposited over the blue pixel areas.

    摘要翻译: 彩色透射式LCD使用在LCD中向液晶层背面提供均匀蓝光的背光源。 然后,被液晶层调制后的蓝色光入射到位于液晶层上方的荧光体材料的背面。 当用蓝光照射时,第一荧光体材料对于显示器的红色像素区域产生红色光,并且当用蓝色光照射时,第二荧光材料产生用于显示器的绿色像素区域的绿色光。 在蓝色像素区域上没有荧光体沉积。

    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE
    46.
    发明申请
    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    波长转换半导体发光器件

    公开(公告)号:US20110156056A1

    公开(公告)日:2011-06-30

    申请号:US13045824

    申请日:2011-03-11

    IPC分类号: H01L33/26 H01L33/50 H01L33/32

    摘要: A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.

    摘要翻译: 诸如磷光体的材料光学耦合到包括设置在n型区域和p型区域之间的发光区域的半导体结构,以有效地将来自发光区域的光提取到荧光体中。 磷光体可以是与半导体结构的表面直接接触的荧光体颗粒,或者结合到半导体结构的陶瓷荧光体,或可以生长半导体结构的薄的成核结构。 磷光体优选是高吸收性和高效率的。 当半导体结构将光发射到这种高效,高吸收性的荧光体中时,磷光体可以有效地从结构中提取光,从而减少了现有技术装置中存在的光学损耗。