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    Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same
    41.
    发明申请
    Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same 审中-公开
    在半导体制造期间控制等离子体成分通量和沉积的方法及其实施方法

    公开(公告)号：US20160126115A1

    公开(公告)日：2016-05-05

    申请号：US14992856

    申请日：2016-01-11

    Applicant: Lam Research Corporation

    Inventor： Rajinder Dhindsa

    IPC: H01L21/67 ,  G05B19/418

    CPC classification number: H01L21/67069 ,  C23F1/08 ,  G05B19/418 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67248

    Abstract: A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

    Abstract translation: 确定在等离子体工艺期间施加的时间依赖衬底温度。 基于在给定时间的等离子体成分的粘附系数的控制来确定任何给定时间的时间依赖衬底温度。 还确定了在等离子体处理期间施加的上等离子体边界和衬底之间的时间依赖性温差。 在给定时间内，基于对基板的等离子体成分的通量的控制来确定任何给定时间的时间依赖性温度差。 时间依赖衬底温度和随时间变化的温差存储在数字格式中，适用于被定义并连接到上等离子体边界和衬底的直接温度控制的温度控制装置。 还提供了一种用于在等离子体处理期间实现上等离子体边界和衬底温度控制的系统。

    System, Method and Apparatus for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor
    45.
    发明申请
    System, Method and Apparatus for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor 有权
    用于协调小容量密封过程反应器中的压力脉冲和RF调制的系统，方法和装置

    公开(公告)号：US20150060404A1

    公开(公告)日：2015-03-05

    申请号：US14016994

    申请日：2013-09-03

    Applicant: Lam Research Corporation

    Inventor： Rajinder Dhindsa ,  Harmeet Singh

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32816 ,  H01J37/32834

    Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process.

    Abstract translation: 等离子体处理系统和方法包括处理室和其中包括的等离子体处理体积。 等离子体处理体积的体积小于处理室。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体限制结构限定。 导电控制结构可移动地设置在靠近所述至少一个出口端口处并且能够控制通过所述至少一个出口端口的出口流在第一流量和第二流量之间，其中所述电导控制结构控制所述出口流量 并且至少一个RF源被调制，并且至少一个处理气体流量是在等离子体处理期间由控制器设定的选择的处理状态调制的。

    System and Method for Heating Plasma Exposed Surfaces
    46.
    发明申请
    System and Method for Heating Plasma Exposed Surfaces 有权
    等离子体暴露表面加热的系统和方法

    公开(公告)号：US20140263177A1

    公开(公告)日：2014-09-18

    申请号：US13853915

    申请日：2013-03-29

    Applicant: Lam Research Corporation

    Inventor： Henry Povolny ,  Rajinder Dhindsa

    IPC: B05D3/04

    CPC classification number: H01J37/32715 ,  C23C16/4586 ,  C23C16/46 ,  G02B6/4296 ,  H01J37/32733 ,  H01J37/32935

    Abstract: A substrate support apparatus for a plasma processing system includes a layer of dielectric material having a top surface and a bottom surface. The top surface is defined to support a substrate in exposure to a plasma. The substrate support apparatus also includes a number of optical fibers each having a first end and a second end. The first end of each optical fiber is defined to receive photons from a photon source. The second end of each optical fiber is oriented to project photons received from the photon source onto the bottom surface of the layer of dielectric material.

    Abstract translation: 用于等离子体处理系统的衬底支撑装置包括具有顶表面和底表面的电介质材料层。 顶表面限定为在暴露于等离子体时支撑基底。 基板支撑装置还包括多个光纤，每个光纤具有第一端和第二端。 每个光纤的第一端被定义为从光子源接收光子。 每个光纤的第二端被定向成将从光子源接收的光子投射到电介质材料层的底表面上。

    PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE
    48.
    发明申请
    PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE 审中-公开
    一种等离子体加工室的保护涂层及其使用方法

    公开(公告)号：US20140065835A1

    公开(公告)日：2014-03-06

    申请号：US13954416

    申请日：2013-07-30

    Applicant: Lam Research Corporation

    Inventor： Bobby Kadkhodayan ,  Jon McChesney ,  Eric Pape ,  Rajinder Dhindsa

    IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/3065 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/505 ,  H01J37/16 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32568 ,  H01J2237/0213 ,  H01L21/02104 ,  H01L21/67017 ,  H01L21/67069

    Abstract: A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber.

    Abstract translation: 用于等离子体室中的柔性聚合物或弹性体涂覆的RF返回带，以保护RF带免受等离子体产生的自由基，例如氟和氧自由基，以及在等离子体处理装置中处理具有减少的颗粒污染的半导体衬底的方法。 涂覆的RF带最小化颗粒产生并且比未涂覆的基底部件具有更低的侵蚀速率。 这种在导电柔性基座部件上具有柔性涂层的涂覆部件提供了RF接地回路，其被配置为允许一个或多个电极在可调节间隙电容耦合等离子体反应器室中移动。

    Confinement ring for use in a plasma processing system
    49.
    发明授权
    Confinement ring for use in a plasma processing system 有权

    公开(公告)号：US11791140B2

    公开(公告)日：2023-10-17

    申请号：US17729967

    申请日：2022-04-26

    Applicant: Lam Research Corporation

    Inventor： Rajinder Dhindsa ,  Akira Koshiishi ,  Alexei Marakhatanov

    IPC: H01J37/32

    CPC classification number: H01J37/32807 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/32642

    Abstract: An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.

    Multi zone gas injection upper electrode system
    50.
    发明授权
    Multi zone gas injection upper electrode system 有权

    公开(公告)号：US11594400B2

    公开(公告)日：2023-02-28

    申请号：US16845723

    申请日：2020-04-10

    Applicant: Lam Research Corporation

    Inventor： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera ,  Darrell Ehrlich

    IPC: H01J37/32 ,  H01L21/67

    Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

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