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    MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDING THE MEMORY CELLS, AND METHODS OF FORMING SAME
    42.
    发明申请
    MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDING THE MEMORY CELLS, AND METHODS OF FORMING SAME 有权
    包含介电材料的记忆体，包括记忆细胞的记忆装置及其形成方法

    公开(公告)号：US20160064666A1

    公开(公告)日：2016-03-03

    申请号：US14476312

    申请日：2014-09-03

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  D.V. Nirmal Ramaswamy ,  Qian Tao ,  Yongjun Jeff Hu ,  Everett A. McTeer

    IPC: H01L45/00

    CPC classification number: H01L45/145 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/1608

    Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

    Abstract translation: 一种存储单元，包括在衬底上的第一电极上的阈值切换材料。 存储单元包括阈值开关材料上的第二电极和阈值开关材料与第一电​​极和第二电极中的至少一个之间的至少一个电介质材料。 记忆材料覆盖在第二电极上。 电介质材料可以直接接触阈值开关材料和第一电极和第二电极中的每一个。 公开了仅在阈值开关材料和电极之间仅包含一个介电材料的存储单元。 还描述了包括存储单元的存储器件和形成存储器单元的方法。

    Transistors, Semiconductor Devices, and electronic devices including transistor gates with conductive elements including cobalt silicide
    43.
    发明申请
    Transistors, Semiconductor Devices, and electronic devices including transistor gates with conductive elements including cobalt silicide 有权
    晶体管，半导体器件和电子器件，包括具有包括硅化钴的导电元件的晶体管栅极

    公开(公告)号：US20140159172A1

    公开(公告)日：2014-06-12

    申请号：US14182794

    申请日：2014-02-18

    Applicant: Micron Technology, Inc.

    Inventor： Yongjun Jeff Hu

    IPC: H01L29/49

    CPC classification number: H01L29/4975 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/10891 ,  H01L27/115 ,  H01L27/11521

    Abstract: A method for fabricating a transistor gate with a conductive element that includes cobalt silicide includes use of a sacrificial material as a place-holder between sidewall spacers of the transistor gate until after high temperature processes, such as the fabrication of raised source and drain regions, have been completed. In addition, semiconductor devices (e.g., DRAM devices and NAND flash memory devices) with transistor gates that include cobalt silicide in their conductive elements are also disclosed, as are transistors with raised source and drain regions and cobalt silicide in the transistor gates thereof. Intermediate semiconductor device structures that include transistor gates with sacrificial material or a gap between upper portions of sidewall spacers are also disclosed.

    Abstract translation: 一种制造具有包括硅化钴的导电元件的晶体管栅极的方法包括使用牺牲材料作为晶体管栅极的侧壁间隔物之间​​的位置保持器，直到高温处理（例如升高的源极和漏极区域的制造） 已经完成 此外，还公开了具有在其导电元件中包括硅化钴的晶体管栅极的半导体器件（例如，DRAM器件和NAND闪存器件），晶体管的晶体管具有在其晶体管栅极中具有升高的源极和漏极区域以及硅化钴的晶体管。 还公开了包括具有牺牲材料的晶体管栅极或侧壁间隔物的上部之间的间隙的中间半导体器件结构。

    Plasma doping of gap fill materials
    46.
    发明授权
    Plasma doping of gap fill materials 有权

    公开(公告)号：US12040182B2

    公开(公告)日：2024-07-16

    申请号：US17971376

    申请日：2022-10-21

    Applicant: Micron Technology, Inc.

    Inventor： Santanu Sarkar ,  Jay Steven Brown ,  Shu Qin ,  Yongjun Jeff Hu ,  Farrell Martin Good

    IPC: H01L21/02 ,  H01L21/3105 ,  H10B63/00

    CPC classification number: H01L21/02282 ,  H01L21/02129 ,  H01L21/0234 ,  H01L21/31053 ,  H10B63/84

    Abstract: In a variety of processes for forming electronic devices that use spin-on dielectric materials, properties of the spin-on dielectric materials can be enhanced by curing these materials using plasma doping. For example, hardness and Young's modulus can be increased for the cured material. Other properties may be enhanced. The plasma doping to cure the spin-on dielectric materials uses a mechanism that is a combination of plasma ion implant and high energy radiation associated with the species ionized. In addition, physical properties of the spin-on dielectric materials can be modified along a length of the spin-on dielectric materials by selection of an implant energy and dopant dose for the particular dopant used, corresponding to a selection variation with respect to length.

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