Abstract:
An optoelectronic component includes a semiconductor chip configured to emit radiation at least via a main radiation surface, a converter element arranged in a beam path of the semiconductor chip, an encapsulating element including a cover element and a side element and forming at least a seal for the converter element against environmental influences, wherein the cover element is arranged above the converter element and the side element, in the cross-section, is arranged laterally to the semiconductor chip and converter element and surrounds the semiconductor chip, the side element and the cover element are in direct contact at least in regions, and the side element includes at least one metal and is in direct contact with the converter element in the lateral direction.
Abstract:
A method of producing a light-emitting device includes providing a carrier having a carrier top face and at least one light-emitting semiconductor chip arranged on the carrier top face, wherein the semiconductor chip has a radiation emission face and is arranged on the carrier top face such that the radiation emission face faces away from the carrier top face; arranging a converter element on the at least one semiconductor chip on its radiation emission face so that the converter element fully covers the radiation emission face of the semiconductor chip and extends laterally beyond the semiconductor chip; covering the converter element with an encapsulant, and compression molding and curing the encapsulant so that the encapsulant covers the converter element on a face facing away from the semiconductor chip, and the converter element and the encapsulant fit closely against the radiation emission face and at least against a side face of the semiconductor chip; and detaching the encapsulant, together with the converter element and the semiconductor chip, from the carrier.
Abstract:
A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.
Abstract:
A method of producing a semiconductor component includes providing a carrier with a first insulation layer, a mirror layer at least partially covered by the first insulation layer and a connection element, wherein the carrier includes an exposed planar mounting surface and the connection element extends through the first insulation layer to the mounting surface, providing a main body with a semiconductor body, a second insulation layer and a contact element to electrically contact the semiconductor body, wherein the main body has an exposed planar contact surface and the contact element extends through the second insulation layer to the contact surface, and connecting the main body to the carrier, wherein the planar contact surface and the planar mounting surface are brought together to form a connecting surface, and the contact element and the connection element electrically connect with one another.
Abstract:
A semiconductor chip without a substrate is provided on an electrically insulating carrier. The carrier has electrically conductive contact metallizations. Furthermore, an electrically conductive carrier substrate and a covering substrate are provided. The covering substrate has electrically conductive contact structures. The carrier is attached to the carrier substrate. Subsequently, the covering substrate is attached to the semiconductor chip and/or to the carrier. The electrically conductive contact structures are connected in an electrically conductive manner to the electrically conductive contact metallizations and the electrically conductive carrier substrate.
Abstract:
A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus.
Abstract:
A method for producing a plurality of optoelectronic components (100) comprises the steps: providing a semiconductor body (101) that is arranged on a carrier (114); and applying a converter material (105) to the semiconductor body (101) by means of a photoconductive transfer element (120).
Abstract:
In an embodiment, a component includes a carrier and a main body disposed on the carrier, wherein the main body includes a first semiconductor layer of a first charge carrier type, a second semiconductor layer of a second charge carrier type, and an optically active zone located therebetween, the optically active zone configured to emit radiation, wherein the first semiconductor layer includes a contiguous main layer and local regions at least locally buried in the main layer and laterally enclosed by the main layer, wherein the local regions are doped, and wherein the local regions has a smaller vertical layer thickness compared to the first semiconductor layer.
Abstract:
A method of producing an optoelectronic component includes providing an opto-electronic semiconductor chip including a layer sequence arranged on a substrate, wherein the layer sequence includes a contact side including two electrical contact locations, the contact side facing away from the substrate; arranging the optoelectronic semiconductor chip on an auxiliary carrier such that the contact side faces away from the auxiliary carrier; arranging a molding material above the auxiliary carrier such that a housing is formed that at least partly encloses the optoelectronic semiconductor chip, wherein the contact side is covered by the molding material; and detaching the housing from the auxiliary carrier.
Abstract:
In one embodiment, the optoelectronic semiconductor device has a semiconductor layer sequence arranged to generate red or orange light. A plurality of electrical through-connections extend through the semiconductor layer sequence. A first main side of the semiconductor layer sequence is electrically contacted by a first electrical contact structure. A second electrical contact structure is located on the first main side. The second contact structure electrically connects the through-connections to one another. The second contact structure is embedded in the first contact structure.