METHOD OF PRODUCING A LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE

    公开(公告)号:US20180033925A1

    公开(公告)日:2018-02-01

    申请号:US15550968

    申请日:2016-02-17

    Abstract: A method of producing a light-emitting device includes providing a carrier having a carrier top face and at least one light-emitting semiconductor chip arranged on the carrier top face, wherein the semiconductor chip has a radiation emission face and is arranged on the carrier top face such that the radiation emission face faces away from the carrier top face; arranging a converter element on the at least one semiconductor chip on its radiation emission face so that the converter element fully covers the radiation emission face of the semiconductor chip and extends laterally beyond the semiconductor chip; covering the converter element with an encapsulant, and compression molding and curing the encapsulant so that the encapsulant covers the converter element on a face facing away from the semiconductor chip, and the converter element and the encapsulant fit closely against the radiation emission face and at least against a side face of the semiconductor chip; and detaching the encapsulant, together with the converter element and the semiconductor chip, from the carrier.

    Method for Producing an Optoelectronic Component and Optoelectronic Component Produced in Such a Way
    45.
    发明申请
    Method for Producing an Optoelectronic Component and Optoelectronic Component Produced in Such a Way 有权
    以这种方式生产光电子元件和光电元件的方法

    公开(公告)号:US20150303353A1

    公开(公告)日:2015-10-22

    申请号:US14380688

    申请日:2013-02-22

    Abstract: A semiconductor chip without a substrate is provided on an electrically insulating carrier. The carrier has electrically conductive contact metallizations. Furthermore, an electrically conductive carrier substrate and a covering substrate are provided. The covering substrate has electrically conductive contact structures. The carrier is attached to the carrier substrate. Subsequently, the covering substrate is attached to the semiconductor chip and/or to the carrier. The electrically conductive contact structures are connected in an electrically conductive manner to the electrically conductive contact metallizations and the electrically conductive carrier substrate.

    Abstract translation: 没有基板的半导体芯片设置在电绝缘载体上。 载体具有导电接触金属化。 此外,提供导电载体基板和覆盖基板。 覆盖基板具有导电接触结构。 载体附着到载体基底上。 随后,将覆盖基板附着到半导体芯片和/或载体上。 导电接触结构以导电方式连接到导电接触金属化层和导电载体基底。

    Optoelectronic Semiconductor Apparatus and Carrier Assembly
    46.
    发明申请
    Optoelectronic Semiconductor Apparatus and Carrier Assembly 有权
    光电半导体器件和载体组件

    公开(公告)号:US20150249073A1

    公开(公告)日:2015-09-03

    申请号:US14428326

    申请日:2013-09-10

    Abstract: A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus.

    Abstract translation: 公开了一种具有光电器件和另一器件的半导体器件。 本发明的实施例提供一种具有光电子器件和另一器件的半导体器件,其中当半导体器件处于工作状态时,光电子器件和另一器件彼此并联互连,其中光电器件连接到第一触点 和第二触点,所述第一触点和所述第二触点被配置为外部接触所述半导体器件,并且其中所述另外的器件与所述半导体器件的至少一个另外的触点连接。

    Component with Buried Doped Areas and Procedures for the Production of A Component

    公开(公告)号:US20220271196A1

    公开(公告)日:2022-08-25

    申请号:US17611041

    申请日:2020-05-14

    Abstract: In an embodiment, a component includes a carrier and a main body disposed on the carrier, wherein the main body includes a first semiconductor layer of a first charge carrier type, a second semiconductor layer of a second charge carrier type, and an optically active zone located therebetween, the optically active zone configured to emit radiation, wherein the first semiconductor layer includes a contiguous main layer and local regions at least locally buried in the main layer and laterally enclosed by the main layer, wherein the local regions are doped, and wherein the local regions has a smaller vertical layer thickness compared to the first semiconductor layer.

    Method of producing an optoelectronic component, and optoelectronic component

    公开(公告)号:US11282991B2

    公开(公告)日:2022-03-22

    申请号:US16065371

    申请日:2016-12-20

    Abstract: A method of producing an optoelectronic component includes providing an opto-electronic semiconductor chip including a layer sequence arranged on a substrate, wherein the layer sequence includes a contact side including two electrical contact locations, the contact side facing away from the substrate; arranging the optoelectronic semiconductor chip on an auxiliary carrier such that the contact side faces away from the auxiliary carrier; arranging a molding material above the auxiliary carrier such that a housing is formed that at least partly encloses the optoelectronic semiconductor chip, wherein the contact side is covered by the molding material; and detaching the housing from the auxiliary carrier.

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT

    公开(公告)号:US20210351332A1

    公开(公告)日:2021-11-11

    申请号:US17284400

    申请日:2019-10-02

    Abstract: In one embodiment, the optoelectronic semiconductor device has a semiconductor layer sequence arranged to generate red or orange light. A plurality of electrical through-connections extend through the semiconductor layer sequence. A first main side of the semiconductor layer sequence is electrically contacted by a first electrical contact structure. A second electrical contact structure is located on the first main side. The second contact structure electrically connects the through-connections to one another. The second contact structure is embedded in the first contact structure.

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