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公开(公告)号：US10236502B2
公开(公告)日：2019-03-19
申请号：US15625476
申请日：2017-06-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kazutaka Kuriki , Mikio Yukawa , Yuji Asano
IPC: H01M4/38 , H01M12/08 , H01M10/0569 , H01M4/66 , H01M10/0525 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01L49/02 , H01G11/26 , H01M4/04 , H01M4/134 , H01M4/1395 , C30B25/00 , C30B29/06 , C30B29/62 , C30B33/02 , H01G11/22 , H01G11/68 , H01G11/70 , H01L21/02 , H01M10/0583
Abstract: Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.
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公开(公告)号：US09911973B2
公开(公告)日：2018-03-06
申请号：US14472962
申请日：2014-08-29
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Ryota Tajima , Shunpei Yamazaki , Teppei Oguni , Takeshi Osada , Shinya Sasagawa , Kazutaka Kuriki
IPC: H01M4/36 , H01M4/133 , B82Y30/00 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M4/62 , H01M10/0525 , H01M10/46
CPC classification number: H01M4/133 , B82Y30/00 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/625 , H01M10/0525 , H01M10/465 , Y02E60/122 , Y02T10/7011
Abstract: A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.
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公开(公告)号：US09660298B2
公开(公告)日：2017-05-23
申请号：US14744151
申请日：2015-06-19
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kazutaka Kuriki , Ryota Tajima , Tamae Moriwaka
IPC: H01M10/0562 , H01M10/0565 , H01M10/0585 , H01G11/46 , H01G11/56 , H01M10/052
CPC classification number: H01L27/13 , H01G11/08 , H01G11/46 , H01G11/56 , H01G11/84 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1259 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01M10/052 , H01M10/0562 , H01M10/0565 , H01M10/0585 , H01M2300/0065 , H01M2300/0071 , H01M2300/0082 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y10T29/49115
Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
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44.发明申请公开(公告)号：US20130249054A1
公开(公告)日：2013-09-26
申请号：US13797023
申请日：2013-03-12
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kazutaka Kuriki , Ryota Tajima , Tamae Morikawa , Junpei Momo
IPC: H01G9/28 , H01M10/052 , H01M4/64 , H01M10/0562 , H01G9/15 , H01G9/025
CPC classification number: H01G9/28 , H01G9/025 , H01G9/15 , H01G11/06 , H01G11/08 , H01G11/28 , H01G11/50 , H01G11/56 , H01L28/40 , H01M4/64 , H01M10/052 , H01M10/0562 , H01M10/0585 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane. The power storage element further includes a positive electrode active material layer over the positive electrode current collector layer and a negative electrode active material layer over the negative electrode current collector layer. An electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer is provided. The electrolyte layer may be a solid electrolyte layer.
Abstract translation: 公开了一种蓄电元件，其包括配置在同一平面上的正极集电体层和负极集电体层。 蓄电元件还包括正极集电层上的正极活性物质层和负极集电体层上的负极活性物质层。 提供与至少正极活性物质层和负极活性物质层接触的电解质层。 电解质层可以是固体电解质层。
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公开(公告)号：US20130095617A1
公开(公告)日：2013-04-18
申请号：US13706841
申请日：2012-12-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Miyako NAKAJIMA , Hiddekazu Miyairi , Toshiyuki Isa , Erika Kato , Mitsuhiro Ichijo , Kazutaka Kuriki , Tomokazu Yokoi
IPC: H01L29/66
CPC classification number: H01L29/6675 , H01L29/04 , H01L29/4908 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility, A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.
Abstract translation: 本发明的目的是提供一种具有小截止电流，大电流和高场效应迁移率的薄膜晶体管，通过氧化氮化硅层形成的氮化硅层和氧化硅层作为栅绝缘层 并且晶体从栅极绝缘层的氧化硅层的界面生长以形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。
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Patent Agency Ranking
公开(公告)号：US12266769B2
公开(公告)日：2025-04-01
申请号：US18534217
申请日：2023-12-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junpei Momo , Kazutaka Kuriki , Hiromichi Godo , Shunpei Yamazaki
IPC: H01M10/46 , A61N1/378 , G06F1/16 , H01L21/822 , H01L27/06 , H01L27/12 , H01L29/786 , H01M10/052 , H01M10/0525 , H01M10/0562 , H01M10/0585 , H01M10/42 , H01M10/613 , H01M10/623 , H02J50/20
Abstract: A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.
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公开(公告)号：US11955612B2
公开(公告)日：2024-04-09
申请号：US18093833
申请日：2023-01-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kazutaka Kuriki , Ryota Tajima , Kouhei Toyotaka , Hideaki Shishido , Toshiyuki Isa
CPC classification number: H01M10/482 , G06N3/04 , G06N3/065 , H01M10/441 , H01M10/486 , H02J7/0013 , H02J7/0047 , H02J7/007
Abstract: A power storage system with excellent characteristics is provided. A power storage system with a high degree of safety is provided. A power storage system with less deterioration is provided. A storage battery with excellent characteristics is provided. The power storage system includes a neural network and a storage battery. The neural network includes an input layer, an output layer, and one or more hidden layers between the input layer and the output layer. The predetermined hidden layer is connected to the previous hidden layer or the previous input layer by a predetermined weight coefficient, and connected to the next hidden layer or the next output layer by a predetermined weight coefficient. In the storage battery, voltage and time at which the voltage is obtained are measured as one of sets of data. The sets of data measured at different times are input to the input layer and the operational condition of the storage battery is changed in accordance with a signal output from the output layer.
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公开(公告)号：US11342599B2
公开(公告)日：2022-05-24
申请号：US17019700
申请日：2020-09-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Junpei Momo , Kazutaka Kuriki , Hiromichi Godo , Shunpei Yamazaki
IPC: H01M10/46 , H02J50/20 , H01M10/0562 , H01M10/613 , H01L21/822 , H01L27/06 , H01M10/052 , H01M10/42 , H01M10/623 , A61N1/378 , G06F1/16 , H01L27/12 , H01L29/786 , H01M10/0525 , H01M10/0585 , H02J7/02
Abstract: A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.
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49.发明授权公开(公告)号：US11322745B2
公开(公告)日：2022-05-03
申请号：US14879330
申请日：2015-10-09
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Tatsuya Ikenuma , Kazutaka Kuriki , Ai Nakagawa
Abstract: Provided is an electrode including a current collector and an active material layer. The active material layer includes an active material, a film including silicone, a conductive additive, and a binder. The active material is in the form of a particle. The film including silicone covers at least part of the active material.
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公开(公告)号：US11205912B2
公开(公告)日：2021-12-21
申请号：US16627429
申请日：2018-07-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takeshi Osada , Akihiro Chida , Toshiyuki Isa , Kazutaka Kuriki
IPC: H02J7/00 , G01R31/387 , G01R31/389 , G01R31/367 , B60L50/64 , B60L58/10 , G06N3/04
Abstract: A power storage system having excellent characteristics is provided. A power storage system having high safety is provided. A power storage system with little degradation is provided. A storage battery having excellent characteristics is provided. A method of operating a power storage system including a storage battery, a first circuit having a function of measuring an impedance, and a neural network includes a first step of stopping charging or discharging of the storage battery, a second step of measuring an open circuit voltage of the storage battery, a third step of measuring an impedance of the storage battery, a fourth step of inputting the open circuit voltage and the impedance that are measured to the input layer, a fifth step of outputting a first signal from the output layer, a sixth step of changing a condition of charging or discharging of the storage battery in accordance with the first signal, and a seventh step of starting charging or discharging of the storage battery; the first signal corresponds to the estimated value of the discharge capacity of the storage battery.
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