公开(公告)号：US20160307776A1

公开(公告)日：2016-10-20

申请号：US15198131

申请日：2016-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

IPC: H01L21/44 ,  H01L29/786 ,  H01L29/423 ,  C23C16/30 ,  H01L29/66 ,  H01L29/49 ,  H01L21/67 ,  C23C16/511 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

公开(公告)号：US20160071840A1

公开(公告)日：2016-03-10

申请号：US14841773

申请日：2015-09-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshitaka YAMAMOTO ,  Masayuki SAKAKURA ,  Tetsuhiro TANAKA ,  Daisuke MATSUBAYASHI

IPC: H01L27/06 ,  H01L29/786 ,  H01L49/02 ,  H01L23/50

CPC classification number: H01L27/0688 ,  H01L21/8258 ,  H01L23/5223 ,  H01L27/1156 ,  H01L28/40 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device that includes transistors with different threshold voltages is provided. Alternatively, a semiconductor device including a plurality of kinds of circuits and transistors whose electrical characteristics are different between the circuits is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes an oxide semiconductor, a conductor, a first insulator, a second insulator, and a third insulator. The conductor has a region where the conductor and the oxide semiconductor overlap with each other. The first insulator is positioned between the conductor and the oxide semiconductor. The second insulator is positioned between the conductor and the first insulator. The third insulator is positioned between the conductor and the second insulator. The second insulator has a negatively charged region.

Abstract translation: 提供了包括具有不同阈值电压的晶体管的半导体器件。 或者，提供包括电路的电特性不同的多种电路和晶体管的半导体器件。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管包括氧化物半导体，导体，第一绝缘体，第二绝缘体和第三绝缘体。 导体具有导体和氧化物半导体彼此重叠的区域。 第一绝缘体位于导体和氧化物半导体之间。 第二绝缘体位于导体和第一绝缘体之间。 第三绝缘体位于导体和第二绝缘体之间。 第二绝缘体具有带负电荷的区域。

公开(公告)号：US20150333160A1

公开(公告)日：2015-11-19

申请号：US14813413

申请日：2015-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Tetsuhiro TANAKA

IPC: H01L29/66 ,  H01L29/45 ,  H01L21/4763 ,  H01L21/441 ,  H01L21/4757 ,  H01L29/786

CPC classification number: H01L21/02565 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02592 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02631 ,  H01L21/441 ,  H01L21/47576 ,  H01L21/47635 ,  H01L29/045 ,  H01L29/26 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869

Abstract: In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.

Abstract translation: 在氧化物半导体层中包括沟道形成区域的半导体器件中，使用氧化物半导体层下方并与氧化物半导体层接触的氧化物绝缘膜和与氧化物半导体层接触并与氧化物半导体层接触的栅极绝缘膜供给氧 通过离子注入法引入的栅极绝缘膜到氧化物半导体层。

公开(公告)号：US20150303217A1

公开(公告)日：2015-10-22

申请号：US14683567

申请日：2015-04-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Masayuki SAKAKURA

IPC: H01L27/12 ,  H01L29/51 ,  H01L23/532 ,  H01L29/786

CPC classification number: H01L27/1207 ,  H01L23/3192 ,  H01L23/49513 ,  H01L23/49575 ,  H01L23/53257 ,  H01L23/5329 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The electric characteristics of a semiconductor device using an oxide semiconductor are improved. The reliability of a semiconductor device using an oxide semiconductor is improved. The semiconductor device includes an element layer. The element layer includes a first film, a transistor, and a second film. The first film and the second film are partly in contact with each other. The region in which the first film and the second film are in contact with each other has a closed-loop shape when seen from above. The transistor is located between the first film and the second film. The region in which the first film and the second film are in contact with each other is located between a side surface of the element layer and the transistor.

Abstract translation: 提高使用氧化物半导体的半导体装置的电特性。 提高使用氧化物半导体的半导体装置的可靠性。 半导体器件包括元件层。 元件层包括第一膜，晶体管和第二膜。 第一膜和第二膜部分地彼此接触。 当从上方观察时，第一膜和第二膜彼此接触的区域具有闭环形状。 晶体管位于第一膜和第二膜之间。 第一膜和第二膜彼此接触的区域位于元件层的侧表面和晶体管之间。

公开(公告)号：US20150060846A1

公开(公告)日：2015-03-05

申请号：US14471766

申请日：2014-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshitaka YAMAMOTO ,  Tetsuhiro TANAKA ,  Takayuki INOUE ,  Hideomi SUZAWA

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/0214 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/28282 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31645 ,  H01L21/32136 ,  H01L21/441 ,  H01L21/465 ,  H01L21/473 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696 ,  H01L29/792

Abstract: A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide. The crystallized hafnium oxide is deposited by a sputtering method using hafnium oxide as a target. When the substrate temperature is Tsub (° C.) and the proportion of oxygen in an atmosphere is P (%) in the sputtering method, P≧45−0.15×Tsub is satisfied. The crystallized hafnium oxide has excellent electron trapping properties. By the trap of an appropriate number of electrons, the threshold of the semiconductor device can be adjusted.

Abstract translation: 提供其中调整阈值的半导体器件。 在包括半导体，与半导体电连接的源电极或漏电极，栅电极和栅电极和半导体之间的电子捕获层的晶体管中，电子捕获层包括结晶的氧化铪。 通过使用氧化铪作为靶的溅射法沉积结晶的氧化铪。 溅射法中，衬底温度为Tsub（℃），气氛中氧的比例为P（％）时，P≥45〜0.15×Tsub。 结晶的氧化铪具有优异的电子捕获性能。 通过适当数量的电子的陷阱，可以调整半导体器件的阈值。

公开(公告)号：US20140103340A1

公开(公告)日：2014-04-17

申请号：US14054130

申请日：2013-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Tetsuhiro TANAKA

IPC: H01L21/02 ,  H01L29/26 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78 ,  H01L29/7869

Abstract: A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed.

Abstract translation: 提供了可以抑制氧化物半导体层中氧空位增加的半导体器件。 提供了具有良好电气特性的半导体器件。 提供了一种高度可靠的半导体器件。 半导体器件包括在沟道形成区域中的氧化物半导体层，并且通过使用氧化物半导体层下方并与氧化物半导体层接触的氧化物绝缘膜和与氧化物半导体层接触的栅绝缘膜， 氧化物绝缘膜或栅极绝缘膜被提供给氧化物半导体层。 此外，导电氮化物用于源电极层，漏电极层和栅电极层的金属膜，由此抑制氧向金属膜的扩散。

公开(公告)号：US20140103338A1

公开(公告)日：2014-04-17

申请号：US14054082

申请日：2013-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Tetsuhiro TANAKA

IPC: H01L21/02 ,  H01L29/26 ,  H01L29/78

CPC classification number: H01L29/78693 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L21/32139 ,  H01L27/1225 ,  H01L29/26 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for a metal film of a source electrode layer and a drain electrode layer, whereby diffusion of oxygen to the metal film is suppressed.

Abstract translation: 提供了可以抑制氧化物半导体层中氧空位增加的半导体器件。 提供了具有良好电气特性的半导体器件。 提供了一种高度可靠的半导体器件。 半导体器件包括在沟道形成区域中的氧化物半导体层，并且通过使用氧化物半导体层下方并与氧化物半导体层接触的氧化物绝缘膜和与氧化物半导体层接触的栅绝缘膜， 氧化物绝缘膜或栅极绝缘膜被提供给氧化物半导体层。 此外，导电氮化物用于源电极层和漏电极层的金属膜，从而抑制氧向金属膜的扩散。

公开(公告)号：US20210242199A1

公开(公告)日：2021-08-05

申请号：US17216759

申请日：2021-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Yutaka OKAZAKI

IPC: H01L27/07 ,  H01L29/786 ,  H01L29/94 ,  H01L27/12 ,  H01G4/008 ,  H01G4/10 ,  H01G4/40 ,  H01L29/66 ,  H05K1/18

Abstract: A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

公开(公告)号：US20210057587A1

公开(公告)日：2021-02-25

申请号：US17006987

申请日：2020-08-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yutaka OKAZAKI ,  Akihisa SHIMOMURA ,  Naoto YAMADE ,  Tomoya TAKESHITA ,  Tetsuhiro TANAKA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US20200227566A1

公开(公告)日：2020-07-16

申请号：US16833918

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.