公开(公告)号：US20060286789A1

公开(公告)日：2006-12-21

申请号：US11424385

申请日：2006-06-15

申请人： Masahiro Sunohara ,  Mitsutoshi Higashi ,  Akinori Shiraishi ,  Hideaki Sakaguchi

发明人： Masahiro Sunohara ,  Mitsutoshi Higashi ,  Akinori Shiraishi ,  Hideaki Sakaguchi

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/48 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/01024 ,  H01L2924/013 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacturing a semiconductor device having a through electrode, includes forming through holes 36 in a substrate 31, forming a first metal layer 39 from one surface side of the substrate and pasting a protection film 40 on one surface of the substrate, forming through electrodes by filling the through holes with a second metal by means of an electroplating of the second metal 42 applied from other surface of the substrate while using the first metal layer as a power feeding layer, removing the protection film 40, and removing the first metal layer 39 located in areas other than peripheral portions of the through electrodes.

摘要翻译： 一种制造具有通孔的半导体器件的方法，包括在衬底31中形成通孔36，从衬底的一个表面侧形成第一金属层39，并将保护膜40粘贴在衬底的一个表面上，通过 电极通过利用从基板的其他表面施加的第二金属42的电镀用第二金属填充通孔，同时使用第一金属层作为供电层，去除保护膜40，并且去除第一金属 位于贯通电极的周边部以外的区域39。

公开(公告)号：US20110227218A1

公开(公告)日：2011-09-22

申请号：US13116623

申请日：2011-05-26

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： H01L23/498

CPC分类号： H01L23/147 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/48 ,  H01L33/486 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/48091 ,  H01L2224/48235 ,  H01L2224/85455 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/15165 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity.

摘要翻译： 在用于封装的硅衬底中，设置有通孔，其中填充有用于容纳电子器件的芯片的空腔的底表面的通孔到衬底的背面。 在空腔的底面侧的贯通电极的端部具有与形成包括电子器件的芯片的电路的布线的连接部。 用于封装的硅衬底的特征在于，（1）包括薄膜布线作为布线，并且连接部分被连接到薄膜布线的导体加强和/或（2）引线接合部分被包括为 通过在空腔的底面侧引线接合贯通电极的端部而形成布线和连接部。

公开(公告)号：US07960820B2

公开(公告)日：2011-06-14

申请号：US12265203

申请日：2008-11-05

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： H01L23/14

CPC分类号： H01L33/04 ,  B81B2207/012 ,  B81C1/0023 ,  B81C2203/031 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/167 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48465 ,  H01L2224/4911 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/20752 ,  H01L2224/05599

摘要： A semiconductor package in which an electronic device chip is provided in a cavity of a silicon substrate stacked product constituted by stacking a plurality of silicon substrates.

摘要翻译： 一种半导体封装件，其中电子器件芯片设置在通过堆叠多个硅衬底而构成的硅衬底堆叠产品的空腔中。

公开(公告)号：US07794112B2

公开(公告)日：2010-09-14

申请号：US11984930

申请日：2007-11-26

申请人： Mitsutoshi Higashi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Akinori Shiraishi

发明人： Mitsutoshi Higashi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Akinori Shiraishi

IPC分类号： F21V1/00

CPC分类号： F21V11/16 ,  F21K9/00 ,  F21Y2115/10 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/16225 ,  H01L2924/16195

摘要： It is a lighting apparatus 10 that has a light emitting element 16, a light emitting element housing 15 having a concave portion 28 that accommodates the light emitting element 16, and an optically transparent member 18 that airproofs a space B formed by the concave portion 28 and transmits light emitted from the light emitting element 16. The concave portion 28 is shaped to become wider toward the optically transparent member 18 from the bottom surface 28A of the concave portion 28. The lighting apparatus 10 is provided with a light shielding member 12 for shielding a part of light emitted from the light emitting element 16 is provided on the optically transparent member 18.

摘要翻译： 它是具有发光元件16，具有容纳发光元件16的凹部28的发光元件壳体15的照明装置10以及对由凹部28形成的空间B进行空气隔绝的光学透明构件18 并且透射从发光元件16发射的光。凹部28从凹部28的底面28A朝向光学透明构件18变宽。照明装置10设置有遮光构件12， 屏蔽从发光元件16发射的光的一部分设置在光学透明构件18上。

公开(公告)号：US07508057B2

公开(公告)日：2009-03-24

申请号：US11892069

申请日：2007-08-20

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： H01L23/06

CPC分类号： B81B7/007 ,  B81B2207/012 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An electronic component device of the present invention includes: a silicon package unit having a structure in which a through electrode provided to a silicon substrate while an electrode post connected to the through electrode is provided upright on an upper side of the silicon substrate; an electronic component mounted on the electrode post and having a connection terminal connected to the top end of the electrode post; and a cap package unit joined onto a periphery of the silicon package unit, and constructing a housing portion in which the electronic component is housed to be hermetically sealed.

摘要翻译： 本发明的电子部件装置包括：具有如下结构的硅封装单元，其中设置在硅基板上的通孔与连接到贯通电极的电极柱直立设置在硅衬底的上侧; 安装在所述电极柱上并具有连接到所述电极柱的顶端的连接端子的电子部件; 以及连接到所述硅封装单元的周边上的盖封装单元，以及构成容纳所述电子部件的壳体部分以进行气密密封。

公开(公告)号：US20080123344A1

公开(公告)日：2008-05-29

申请号：US11773155

申请日：2007-07-03

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： F21V15/01 ,  F21V7/04 ,  H01J9/02

CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/73265 ,  H01L2924/3025 ,  Y10S362/80 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device housing having a concave part is provided therein for housing a light emitting device. Side surfaces of the concave part are each configured to be a perpendicular surface that is substantially perpendicular to a bottom surface of the concave part, and other side surfaces are each configured to be an inclined surface for reflecting light from the light emitting device toward above the light emitting device.

摘要翻译： 在其中设置有具有凹部的发光器件壳体，用于容纳发光器件。 凹部的侧面分别构成为大致垂直于凹部的底面的垂直面，其他侧面各自构成为将来自发光元件的光向上方倾斜的倾斜面 发光装置。

公开(公告)号：US20080029852A1

公开(公告)日：2008-02-07

申请号：US11882568

申请日：2007-08-02

申请人： Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Masahiro Sunohara ,  Akinori Shiraishi ,  Mitsutoshi Higashi

发明人： Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Masahiro Sunohara ,  Akinori Shiraishi ,  Mitsutoshi Higashi

IPC分类号： H01L29/02 ,  H01L21/46

CPC分类号： H01L23/055 ,  B81B2207/012 ,  B81C1/0023 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/0401

摘要： A semiconductor device includes a laminated substrate formed by laminating a plurality of semiconductor substrates, a concave part formed in the laminated substrate, and a semiconductor element mounted in the concave part. A method of manufacturing a semiconductor device includes a first step of forming a laminated substrate by laminating a plurality of semiconductor substrates, a second step of forming a concave part by etching the laminated substrate, and a third step of mounting a semiconductor element in the concave part.

摘要翻译： 半导体器件包括通过层叠多个半导体衬底，形成在层叠衬底中的凹部和安装在凹部中的半导体元件而形成的层叠衬底。 一种制造半导体器件的方法包括：通过层叠多个半导体衬底形成层叠衬底的第一步骤，通过蚀刻层叠衬底形成凹部的第二步骤，以及将半导体元件安装在凹部中的第三步骤 部分。

公开(公告)号：US08368206B2

公开(公告)日：2013-02-05

申请号：US12187641

申请日：2008-08-07

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： H01L33/64

CPC分类号： H05K3/107 ,  H01L23/3735 ,  H01L23/49861 ,  H01L33/483 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/16 ,  H05K1/0203 ,  H05K1/0263 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/108 ,  H05K2201/10106

摘要： A heat radiation package of the present invention includes a substrate in an upper surface side of which recess portion is provided, embedded wiring portion which is filled in the recess portion of the substrate and on which semiconductor element which generates a heat is mounted, and a heat sink connected to a lower surface side of the substrate. The substrate is made of silicon, ceramics, or insulating resin.

摘要翻译： 本发明的散热封装包括设置有凹部的上表面侧的基板，填充在基板的凹部内并嵌入有发热部件的半导体元件的嵌入布线部， 散热器连接到基板的下表面侧。 基板由硅，陶瓷或绝缘树脂制成。

公开(公告)号：US08148738B2

公开(公告)日：2012-04-03

申请号：US11812149

申请日：2007-06-15

申请人： Kei Murayama ,  Mitsutoshi Higashi ,  Naoyuki Koizumi ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara

发明人： Kei Murayama ,  Mitsutoshi Higashi ,  Naoyuki Koizumi ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara

IPC分类号： H01L31/12

CPC分类号： H01L25/167 ,  H01L23/147 ,  H01L23/4926 ,  H01L23/62 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/32145 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region of the semiconductor substrate 102, a P conducting type of a layer 104, and an N layer 106 have been formed, while an N conducting type impurity is implanted to the P layer 104, and then the implanted impurity is diffused to constitute the N layer 106. A zener diode 108 made of a semiconductor device has been formed by the P layer 104 and the N layer 106.

摘要翻译： 在半导体器件100中，发光元件120已经被安装在半导体衬底102的上平面上。在半导体衬底102的杂质扩散区域中，P导电类型的层104和N层106具有 形成N导电型杂质，然后将N导电型杂质注入到P层104中，然后将注入的杂质扩散以构成N层106.由P层104形成由半导体器件制成的齐纳二极管108， N层106。

公开(公告)号：US07989927B2

公开(公告)日：2011-08-02

申请号：US12257626

申请日：2008-10-24

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： H01L23/49

CPC分类号： H01L23/147 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/48 ,  H01L33/486 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/48091 ,  H01L2224/48235 ,  H01L2224/85455 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/15165 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity.

摘要翻译： 在用于封装的硅衬底中，设置有通孔，其中填充有用于容纳电子器件的芯片的空腔的底表面的通孔到衬底的背面。 在空腔的底面侧的贯通电极的端部具有与形成包括电子器件的芯片的电路的布线的连接部。 用于封装的硅衬底的特征在于，（1）包括薄膜布线作为布线，并且连接部分被连接到薄膜布线的导体加强和/或（2）引线接合部分被包括为 通过在空腔的底面侧引线接合贯通电极的端部而形成布线和连接部。