公开(公告)号：US20050064718A1

公开(公告)日：2005-03-24

申请号：US10671186

申请日：2003-09-24

申请人： Zhiping Yin ,  Gurtej Sandhu

发明人： Zhiping Yin ,  Gurtej Sandhu

IPC分类号： H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L27/10888 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10811 ,  H01L27/10852 ,  H01L28/90

摘要： An antireflective layer formed from boron-doped amorphous carbon can be removed using a process which is less likely to over etch a dielectric layer than conventional technology. This layer can be removed by exposing the layer to an oxygen plasma (i.e. an “ashing” process), preferably concurrently with the ashing and removal of an overlying photoresist layer. An inventive process which uses the inventive antireflective layer is also described.

公开(公告)号：US20050056835A1

公开(公告)日：2005-03-17

申请号：US10789736

申请日：2004-02-27

申请人： Zhiping Yin ,  David Williams ,  Weimin Li

发明人： Zhiping Yin ,  David Williams ,  Weimin Li

IPC分类号： H01L21/314 ,  H01L29/04

CPC分类号： H01L21/02115 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3146 ,  H01L27/10852

摘要： A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.

摘要翻译： 形成透明无定形碳层。 透明无定形碳层具有低吸收系数，使得无定形碳在可见光下是透明的。 透明无定形碳层可用于不同目的的半导体器件中。 透明无定形碳层可以包括在半导体器件中的最终结构中。 在制造半导体器件期间，透明非晶碳层也可用作蚀刻工艺中的掩模。

公开(公告)号：US06790762B1

公开(公告)日：2004-09-14

申请号：US09651386

申请日：2000-08-29

申请人： Zhiping Yin ,  Mark Jost

发明人： Zhiping Yin ,  Mark Jost

IPC分类号： H01L214763

CPC分类号： H01L21/76849 ,  H01L21/76801 ,  H01L21/76867

摘要： As an alternative embodiment and in connection with the reduction of the amount of ammonia in the mixture, processing conditions may be altered from conditions that are less likely to cause formation to oxide husk 20 to conditions that are more likely. For example, processing temperatures sufficient to form passivation layer 32 may be initiated with an ammonia-rich mixture under conditions not likely to cause formation of oxide husk 20. As the amount of ammonia in the mixture is reduced, processing temperatures may be increased proportionally under conditions that are more likely to cause formation of oxide husk 20 than under conditions previously established when the amount of ammonia in the mixture is greater. The initial formation of some of passivation layer 32, however, resists the formation of oxide husk 20. Preferably, the processing temperature will be the same as the deposition temperature for ILD layer 18.

摘要翻译： 本发明涉及ILD层的形成，同时防止金属互连的上表面的氧化降低。 根据本发明，通过在形成ILD之前钝化金属互连的暴露的上表面来避免金属互连的上表面的氧化。为了避免在互连的上表面期间的氧化 立即在形成ILD层之前或同时形成ILD层，互连的上表面的原位钝化避免了现有技术的问题。

公开(公告)号：US06605863B2

公开(公告)日：2003-08-12

申请号：US10178398

申请日：2002-06-24

申请人： Zhiping Yin ,  Gary Chen

发明人： Zhiping Yin ,  Gary Chen

IPC分类号： H01L2358

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/0276 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76807

摘要： Methods of selectively removing post-etch polymer material and dielectric antireflective coatings (DARC) without substantially etching an underlying carbon-doped low k dielectric layer, and compositions for the selective removal of a DARC layer and post-etch polymer material are provided. A composition comprising trimethylammonium fluoride is used to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer at an etch rate of the antireflective coating layer to the low k dielectric layer that is greater than the etch rate of the antireflective coating to a TEOS layer. The method and composition are useful, for example, in the formation of high aspect ratio openings in low k (carbon doped) silicon oxide dielectric layers and maintaining the integrity of the dimensions of the formed openings during a cleaning step to remove a post-etch polymer and antireflective coating.

公开(公告)号：US06605502B2

公开(公告)日：2003-08-12

申请号：US10172895

申请日：2002-06-17

申请人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

发明人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

IPC分类号： H01L2176

CPC分类号： G03F7/091 ,  G03F7/092 ,  H01L21/0276 ,  H01L21/32 ,  H01L21/76202 ,  Y10T428/24471 ,  Y10T428/24917

摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.

公开(公告)号：US06495450B1

公开(公告)日：2002-12-17

申请号：US09620790

申请日：2000-07-21

申请人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

发明人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

IPC分类号： H01L214763

CPC分类号： G03F7/091 ,  G03F7/092 ,  H01L21/0276 ,  H01L21/32 ,  H01L21/76202 ,  Y10T428/24471 ,  Y10T428/24917

摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.

摘要翻译： 形成用于集成电路制造的氧化扩散阻挡层叠体的方法包括在半导体衬底组件上形成无机抗反射材料层，然后在无机抗反射材料层上形成氧化扩散阻挡层。 形成这种堆叠的另一种方法包括在半导体衬底组件上形成衬垫氧化物层，然后在衬垫氧化物层上形成无机抗反射材料层，形成在抗反射材料层上的氧化扩散阻挡层。 抗反射材料层可以包括选自氮化硅，氧化硅和氮氧化硅的材料层，并且还可以是富硅层。 氧化扩散阻挡层可以用于场集成电路中用于隔离的场区氧化。 此外，还描述了各种氧化扩散阻挡层叠体。

公开(公告)号：US06316285B1

公开(公告)日：2001-11-13

申请号：US09392201

申请日：1999-09-08

申请人： Tongbi Jiang ,  Zhiping Yin

发明人： Tongbi Jiang ,  Zhiping Yin

IPC分类号： H01L2144

CPC分类号： H01L23/49816 ,  H01L23/13 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01087 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： Passivating layers methods for forming the same are provided for packaged integrated circuit devices. In particular, an integrated circuit die is mounted in a plastic leaded chip carrier, and a photosensitive material is then deposited over the surfaces to be passivated. Portions of the photosensitive material are then exposed to UV light, resulting in a crosslinked siloxane network. In this way, a low-temperature photodefinable passivation layer is provided for the package, with characteristics similar to conventional oxides. Advantageously, the photosensitive material can be patterned during the UV exposure, and unexposed portions selectively removed to leave the passivation layer only over desired portions of the package.

摘要翻译： 为封装的集成电路器件提供钝化层形成方法。 特别地，集成电路管芯安装在塑料引线芯片载体中，然后将感光材料沉积在待钝化的表面上。 然后将感光材料的一部分暴露于UV光下，得到交联的硅氧烷网络。 以这种方式，为封装提供了低温可光限定钝化层，具有与常规氧化物相似的特性。 有利地，可以在UV曝光期间对感光材料进行图案化，并且选择性地去除未曝光部分以仅在封装的期望部分上留下钝化层。

公开(公告)号：US06291363B1

公开(公告)日：2001-09-18

申请号：US09259713

申请日：1999-03-01

申请人： Zhiping Yin ,  Gurtej Singh Sandhu

发明人： Zhiping Yin ,  Gurtej Singh Sandhu

IPC分类号： H01L2131

CPC分类号： H01L21/3105 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/3145 ,  H01L21/32139

摘要： The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprising providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silcon-based compound and N2O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.

摘要翻译： 本发明包括防止在覆盖DARC涂层的基板中形成粒子的方法。 该方法包括提供半导体构造。 DARC涂层沉积在构建体上，该等离子体包含硅氧烷基化合物和N2O。 DARC涂层暴露于有效防止在基底层中形成缺陷的气氛。 暴露的DARC涂层与基材重叠。

公开(公告)号：US06225671B1

公开(公告)日：2001-05-01

申请号：US09538555

申请日：2000-03-29

申请人： Zhiping Yin

发明人： Zhiping Yin

IPC分类号： H01L2972

CPC分类号： H01L23/5329 ,  H01L21/0276 ,  H01L21/3145 ,  H01L2924/0002 ,  Y10S438/905 ,  H01L2924/00

摘要： A method of fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the substantially smooth anti-reflective coating is to be deposited. The anti-reflective coating may be a dielectric anti-reflective coating (DARC) which includes silicon, oxygen and nitrogen, and is preferably of the general formula SixOyNz, where x equals 0.40 to 0.65, y equals 0.02 to 0.56 and z equals 0.05 to 0.33. Preferably, x+y+z equals one. The method may also include fabricating a silicon nitride layer over the anti-reflective coating. A semiconductor device which includes a silicon nitride layer over an anti-reflective coating that has been fabricated in accordance with the inventive method has a density of less than about 40,000 particles or surface roughness features in the silicon nitride of about 120-150 nanometers dimension per eight inch wafer. Accordingly, a mask that is subsequently formed over the silicon nitride layer has a substantially uniform thickness and is substantially distortion-free.

摘要翻译： 一种在半导体器件结构上制造基本上光滑表面的抗反射涂层的方法，包括在其中沉积基本上平滑的抗反射涂层的处理室中的惰性气体产生等离子体。 抗反射涂层可以是包括硅，氧和氮的电介质抗反射涂层（DARC），并且优选为通式SixOyNz，其中x等于0.40至0.65，y等于0.02至0.56，z等于0.05至 0.33。 优选地，x + y + z等于1。 该方法还可以包括在抗反射涂层上制造氮化硅层。 在根据本发明方法制造的抗反射涂层上包括氮化硅层的半导体器件具有小于约40,000个颗粒的密度或氮化硅中的表面粗糙度特征，其尺寸为约120-150纳米 八寸晶圆。 因此，随后在氮化硅层上形成的掩模具有基本均匀的厚度并且基本上无变形。

公开(公告)号：US06174816B1

公开(公告)日：2001-01-16

申请号：US09544148

申请日：2000-04-06

申请人： Zhiping Yin ,  Gurtej S. Sandhu

发明人： Zhiping Yin ,  Gurtej S. Sandhu

IPC分类号： H01L2100

CPC分类号： H01L21/31144 ,  H01L21/0276

摘要： An improved photolithography technique is provided whereby the beneficial effects of using an anti-reflective coating may be realized while maintaining critical dimensions in each subsequent step. This improvement is realized by the treatment of the anti-reflective coating with a gaseous plasma or a solution of sulfuric acid and hydrogen peroxide. By treating the anti-reflective coating with gaseous plasma or solution of sulfuric acid and hydrogen peroxide, no “footing” results and the critical dimensions as set by the photoresist mask are preserved to provide an accurately patterned mask for subsequent steps.

摘要翻译： 提供了一种改进的光刻技术，由此可以在每个后续步骤中保持关键尺寸的同时实现使用抗反射涂层的有益效果。 这种改进通过用气态等离子体或硫酸和过氧化氢溶液处理抗反射涂层来实现。 通过用气态等离子体或硫酸和过氧化氢溶液处理抗反射涂层，不会产生“基础”的结果，并且保留由光致抗蚀剂掩模设定的临界尺寸以提供用于后续步骤的精确图案化掩模。