公开(公告)号：US20240243040A1

公开(公告)日：2024-07-18

申请号：US18577508

申请日：2022-07-07

申请人： Danfoss Silicon Power GmbH

发明人： Tobias APPEL

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L23/49541 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/56 ,  H01L23/3107

摘要： A method is described forming a first sub-leadframe having one or more first connection terminals; forming a second sub-leadframe having one or more second connection terminals; joining the first and second sub-leadframes to form a leadframe such that at least some of the first connection terminals overlap at least some of the second connection terminals.

公开(公告)号：US11776932B2

公开(公告)日：2023-10-03

申请号：US15514598

申请日：2015-09-21

申请人： DANFOSS SILICON POWER GMBH

发明人： Ronald Eisele ,  Holger Ulrich

IPC分类号： B23K1/00 ,  H01L23/00 ,  H05K3/32 ,  B22F3/14

CPC分类号： H01L24/83 ,  B22F3/14 ,  B23K1/0016 ,  H01L24/32 ,  H01L24/75 ,  H05K3/32 ,  B22F2301/10 ,  B22F2301/255 ,  H01L24/29 ,  H01L2224/29139 ,  H01L2224/29294 ,  H01L2224/29295 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/755 ,  H01L2224/7511 ,  H01L2224/7525 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/75315 ,  H01L2224/83048 ,  H01L2224/83075 ,  H01L2224/8384 ,  H01L2224/83095 ,  H01L2224/83101 ,  H01L2224/83201 ,  H01L2224/83204 ,  H01L2224/83911 ,  H01L2224/83948 ,  H05K2203/0278 ,  H05K2203/1131 ,  H05K2203/1157 ,  H01L2224/29339 ,  H01L2924/00014 ,  H01L2224/29294 ,  H01L2924/00014 ,  H01L2224/29347 ,  H01L2924/01047 ,  H01L2224/755 ,  H01L2924/00012

摘要： Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

公开(公告)号：US11616353B2

公开(公告)日：2023-03-28

申请号：US16630927

申请日：2018-09-25

申请人： Danfoss Silicon Power GmbH

发明人： Lars Hass

IPC分类号： H02G5/02 ,  H01B13/00 ,  H01R25/16

摘要： The present disclosure provides a busbar (100), comprising: an insulating body (110); and a busbar conductor (120, 130, 140) comprising a conductor body partially encapsulated by the insulating body and a connection terminal (121, 131, 141) extending from the conductor body and configured for connecting an electrical device, and a portion of the connection terminal is surrounded by an insulating structure (10). The present disclosure further provides a power module (200) comprising the busbar and a method of manufacturing a busbar.

公开(公告)号：US20220071066A9

公开(公告)日：2022-03-03

申请号：US17226219

申请日：2021-04-09

申请人： Danfoss Silicon Power GmbH

发明人： Georg Wecker ,  Ole Mühlfeld ,  Lars Paulsen ,  Henning Ströbel-Maier ,  Holger Beer ,  Christopher Klaehr ,  Klaus Olesen

IPC分类号： H05K7/20

摘要： The invention relates to an electronic power system (1) comprising at least one electronic power module (2). The electronic power module (2) comprises a base plate (3) and at least one heat generating component arranged on a first side of the base plate (3). The electronic power module (2) comprises a cooling structure (4) transporting heat away from the electronic power module (2) via a coolant that is guided by the cooling structure (4). The cooling structure (4) is arranged on a second side (5) of the base plate (3) opposite to the first side. Task of the invention is to provide an electronic power system (1) with an improved cooling. According to the present invention this task is solved in that the cooling structure (4) is integrally formed with the base plate (3).

公开(公告)号：US20210227726A1

公开(公告)日：2021-07-22

申请号：US17226219

申请日：2021-04-09

申请人： Danfoss Silicon Power GmbH

发明人： Georg Wecker ,  Ole Mühlfeld ,  Lars Paulsen ,  Henning Ströbel-Maier ,  Holger Beer ,  Christopher Klaehr ,  Klaus Olesen

IPC分类号： H05K7/20

摘要： The invention relates to an electronic power system (1) comprising at least one electronic power module (2). The electronic power module (2) comprises a base plate (3) and at least one heat generating component arranged on a first side of the base plate (3). The electronic power module (2) comprises a cooling structure (4) transporting heat away from the electronic power module (2) via a coolant that is guided by the cooling structure (4). The cooling structure (4) is arranged on a second side (5) of the base plate (3) opposite to the first side. Task of the invention is to provide an electronic power system (1) with an improved cooling. According to the present invention this task is solved in that the cooling structure (4) is integrally formed with the base plate (3).

公开(公告)号：US20210104488A1

公开(公告)日：2021-04-08

申请号：US17126139

申请日：2020-12-18

申请人： DANFOSS SILICON POWER GMBH

发明人： Ronald Eisele ,  Holger Ulrich

IPC分类号： H01L23/00 ,  H05K3/32 ,  B22F3/14

摘要： Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

公开(公告)号：US09040338B2

公开(公告)日：2015-05-26

申请号：US13883348

申请日：2011-10-28

申请人： Ronald Eisele

发明人： Ronald Eisele

IPC分类号： H01L21/00 ,  H01L37/00 ,  G01K7/16 ,  H01L23/15 ,  H01L23/34 ,  H01L23/00

CPC分类号： H01L37/00 ,  G01K7/16 ,  H01L23/15 ,  H01L23/34 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/83205

摘要： Method of manufacturing sinterable electrical components for jointly sintering with active components, the components in planar shape being provided with at least one planar lower face meant for sintering, and an electrical contact area on the face opposite to the sintering face being available in the form of a metallic contact face, whose upper side is contactable by means of a commonly known method of the group: wire bonding or soldering or sintering or pressure contacting, the component being a temperature sensor, whose lower face is provided with a sinterable metallization on a ceramic body, said ceramic body having two electrical contact faces for continued electrical connection.

摘要翻译： 制造用于与活性组分共同烧结的可烧结电气部件的方法，平面形状的部件设置有用于烧结的至少一个平面下表面，并且与烧结面相对的表面上的电接触面积可以以 金属接触面，其上侧可通过本发明的公知的方法接触：导线接合或焊接或烧结或压力接触，所述部件是温度传感器，其下表面在陶瓷上设置有可烧结金属化 所述陶瓷体具有两个用于继续电连接的电接触面。

公开(公告)号：US20140225247A1

公开(公告)日：2014-08-14

申请号：US14346458

申请日：2012-09-10

申请人： Martin Becker ,  Ronald Eisele ,  Frank Osterwald ,  Jacek Rudzki

发明人： Martin Becker ,  Ronald Eisele ,  Frank Osterwald ,  Jacek Rudzki

IPC分类号： H01L23/492

CPC分类号： H01L24/85 ,  H01L21/6835 ,  H01L23/4924 ,  H01L23/562 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2221/68372 ,  H01L2224/03013 ,  H01L2224/0311 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/2908 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48491 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/786 ,  H01L2224/83801 ,  H01L2224/8382 ,  H01L2224/8384 ,  H01L2224/85001 ,  H01L2924/00015 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00011

摘要： The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal moulded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the moulded body used according to the method for contacting are selected corresponding to the magnitude.

摘要翻译： 本发明涉及一种功率半导体芯片（10），其具有至少一个上侧电位表面，并且接触厚电线（50）或条带，包括在电位表面上的连接层（I）和至少一个金属模制体 24,25），其面向电位表面的下平面侧根据连接方法设置有施加到连接层（I）的涂层，其材料组成和厚度 根据接触方法使用的相关的粗线（50）或布置在模制体的上侧上的条对应于大小来选择。

公开(公告)号：US20120282772A1

公开(公告)日：2012-11-08

申请号：US13460939

申请日：2012-05-01

申请人： Mathias Kock ,  Ronald Eisele

发明人： Mathias Kock ,  Ronald Eisele

IPC分类号： H01L21/283

CPC分类号： H01L21/568 ,  C23C4/01 ,  C23C4/02 ,  C23C4/134 ,  C23C4/18 ,  H01L21/561 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/93 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/03418 ,  H01L2224/03442 ,  H01L2224/03444 ,  H01L2224/056 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/00014 ,  H01L2224/03

摘要： A method of manufacturing a semiconductor component includes the steps of manufacturing of a wafer, applying structures of components on the wafer to form a wafer assembly, applying a metal coating on the wafer, removing the metal coating in non-contact areas of the components, applying surrounds on the edge areas of the components, arranging the wafer on a foil held by a clamping ring, separating the components of the wafer compound carried by the foil from one another, arranging a covering mask on the areas of the separated components carried by the foil which are not to be coated, applying a metal coating on the separate components covered with the mask, removal of the mask, and removal of the components from the foil and further processing the separate components wherein that applying a metal coating on the separate components covered by the mask takes place by means of thermal spraying.

摘要翻译： 制造半导体部件的方法包括以下步骤：制造晶片，在晶片上施加部件结构以形成晶片组件，在晶片上施加金属涂层，去除部件非接触区域中的金属涂层， 在组件的边缘区域上施加周围环境，将晶片布置在由夹紧环保持的箔上，将由箔承载的晶片化合物的组分彼此分离，将覆盖掩模布置在由 不要被涂覆的箔，在被掩模覆盖的单独部件上施加金属涂层，去除掩模，以及从箔中去除组分并进一步处理单独的部件，其中在单独的部件上施加金属涂层 掩模覆盖的部件通过热喷涂进行。

公开(公告)号：US12125817B2

公开(公告)日：2024-10-22

申请号：US17608856

申请日：2020-05-06

申请人： Danfoss Silicon Power GmbH

发明人： Martin Becker ,  André Bastos Abibe ,  Ronald Eisele ,  Jacek Rudzki ,  Frank Osterwald ,  David Benning

IPC分类号： H01L23/00 ,  H01L23/498

CPC分类号： H01L24/40 ,  H01L23/49833 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4001 ,  H01L2224/40091 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48011 ,  H01L2224/48245 ,  H01L2224/73213 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/8384 ,  H01L2224/8484 ,  H01L2224/85203 ,  H01L2924/10272 ,  H01L2924/351 ,  H01L2924/37001

摘要： Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.