公开(公告)号：US11655394B2

公开(公告)日：2023-05-23

申请号：US16636816

申请日：2017-08-09

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Yuya Otsuka ,  Tomohiro Iwano

IPC: C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044

Abstract: Polishing liquid comprising abrasive grains, a phosphonic acid compound having a molecular weight of 210 or more, and at least one selected from the group consisting of amino acids and amino acid derivatives, in which a silanol group density of the abrasive grains is 6.5 groups/nm2 or less, and a degree of association of the abrasive grains is 1.5 or more.

公开(公告)号：US11649377B2

公开(公告)日：2023-05-16

申请号：US16638493

申请日：2017-08-14

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Masayuki Hanano ,  Toshio Takizawa

IPC: C09G1/02 ,  C09K13/06 ,  H01L21/306 ,  H01L21/3105

CPC classification number: C09G1/02 ,  C09K13/06 ,  H01L21/31053 ,  H01L21/30625

Abstract: Provided is a CMP polishing liquid used for removing a part of an insulating portion of a base substrate, which includes a substrate, a stopper provided on one surface of the substrate, and the insulating portion provided on a surface of the stopper opposite to the substrate, by CMP to expose the stopper, the polishing liquid containing: abrasive grains containing cerium; a nonionic water-soluble compound A; a polymer compound B having at least one selected from the group consisting of carboxylic acid groups and carboxylate groups; a basic pH adjusting agent which is optionally contained; and water, in which a content of the basic pH adjusting agent is less than 1.3×10−2 mol/kg based on the total mass of the polishing liquid.

公开(公告)号：US11648641B2

公开(公告)日：2023-05-16

申请号：US16080659

申请日：2017-02-13

Applicant: FUJIMI INCORPORATED

Inventor： Makoto Tabata

IPC: B24B37/11 ,  B24B37/00 ,  H01L21/02 ,  C09G1/02 ,  H01L21/304 ,  B24B37/08

CPC classification number: B24B37/11 ,  B24B37/00 ,  B24B37/08 ,  C09G1/02 ,  H01L21/02013 ,  H01L21/02024 ,  H01L21/304

Abstract: Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry PF to the silicon substrate. The total amount of the final stock polishing slurry PF supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 μg or less.

公开(公告)号：US20230143074A1

公开(公告)日：2023-05-11

申请号：US17911087

申请日：2021-03-01

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition that can achieve wettability enhancement and haze reduction of a polished surface of a silicon wafer. The polishing composition for a silicon wafer contains an abrasive, a cellulose derivative, a surfactant, a basic compound, and water. Here, the cellulose derivative has a weight average molecular weight of more than 120×104, and the surfactant has a molecular weight of less than 4000.

公开(公告)号：US11643599B2

公开(公告)日：2023-05-09

申请号：US16510286

申请日：2019-07-12

Applicant: Versum Materials US, LLC

Inventor： Chun Lu ,  Xiaobo Shi ,  Dnyanesh Chandrakant Tamboli ,  Reinaldo Mario Machado ,  Mark Leonard O'Neill ,  Matthias Stender

IPC: C09K13/02 ,  C09G1/02 ,  C09K13/00 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09K13/02 ,  C09G1/02 ,  C09K13/00 ,  H01L21/3212 ,  H01L21/7684

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

公开(公告)号：US20190233678A1

公开(公告)日：2019-08-01

申请号：US16338002

申请日：2017-09-05

Applicant: FUJIMI INCORPORATED

Inventor： Souma TAGUCHI ,  Keiji ASHITAKA ,  Naoya MIWA

IPC: C09G1/02 ,  C01B33/146 ,  C09K3/14

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C01B33/146 ,  C09K3/1436 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212

Abstract: To provide a means capable of suppressing the generation of gelation at the time of or after the addition of a silane coupling agent in the production of a cationically modified silica including modifying a silica raw material with a silane coupling agent. The present invention is a method for producing a cationically modified silica, including: mixing a silica raw material having a negative zeta potential with a silane coupling agent having an amino group or a quaternary cationic group; and reacting the silica raw material with the silane coupling agent to obtain a cationically modified silica, in which the cationically modified silica satisfies the following relational expression (1): X

公开(公告)号：US20190211245A1

公开(公告)日：2019-07-11

申请号：US16331137

申请日：2017-06-21

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Kwang Soo PARK ,  Jung Yoon KIM ,  Jun Ha HWANG

IPC: C09K3/14

CPC classification number: C09K3/1436 ,  C09G1/02 ,  C09K3/14 ,  C09K3/1409

Abstract: The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodiment of the present invention, the surface-modified colloidal ceria abrasive particles comprise: colloidal ceria abrasive particles; and cerium atoms and hydroxyl groups (—OH) formed on the surface of the colloidal ceria abrasive particles.

公开(公告)号：US20190203073A1

公开(公告)日：2019-07-04

申请号：US16297745

申请日：2019-03-11

Applicant: UWIZ Technology Co., Ltd.

Inventor： Yun-Lung Ho ,  Chung-Wei Chiang ,  Song-Yuan Chang ,  Ming-Hui Lu ,  Ming-Che Ho

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  B24B37/24 ,  H01L21/3212

Abstract: Provided is a slurry composition including abrasive particles, halogen oxide, and nitroxide compound. The combination of halogen oxide and nitroxide compound has a synergistic effect to remove a substrate containing tungsten and silicon oxide. Moreover, a use of the slurry composition and a polishing method using the slurry composition are provided.

公开(公告)号：US20190148414A1

公开(公告)日：2019-05-16

申请号：US16243702

申请日：2019-01-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Jin CHO ,  Joon-Hwa BAE ,  Byoung Kwon CHOO ,  Byung Hoon KANG ,  Kwang Suk KIM ,  Woo Jin CHO ,  Jun Hyuk CHEON

IPC: H01L27/12 ,  B24B31/00 ,  H01L21/3105 ,  G09G3/3233 ,  C09G1/02

CPC classification number: H01L27/1248 ,  B24B31/00 ,  C09G1/02 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0847 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L22/26 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675 ,  H01L2227/323

Abstract: A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first gate metal wire, forming a second gate metal wire on the first insulation layer, forming a second main insulation layer that covers the second gate metal wire, forming a second auxiliary insulation layer on the second main insulation layer, forming an exposed portion of an upper surface of the second main insulation layer by polishing the second auxiliary insulation layer, and forming a first data metal wire on the second main insulation layer and the second auxiliary insulation layer.

公开(公告)号：US20190106596A1

公开(公告)日：2019-04-11

申请号：US15725855

申请日：2017-10-05

Applicant: Fujifilm Planar Solutions, LLC

Inventor： Abhudaya Mishra

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09G1/02 ,  C09K3/1409 ,  H01L21/31053

Abstract: Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.