公开(公告)号：US3982261B1

公开(公告)日：1987-04-07

申请号：US49648774

申请日：1974-08-12

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01L21/208 ,  H01L29/205 ,  H01L31/11 ,  H01L33/00 ,  H01S5/323

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J31/501 ,  H01J2201/3423 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/205 ,  H01L31/11 ,  H01L33/0025 ,  H01S5/323 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/12

公开(公告)号：US4616248A

公开(公告)日：1986-10-07

申请号：US735928

申请日：1985-05-20

Applicant: M. Asif Khan ,  Richard G. Schulze

Inventor： M. Asif Khan ,  Richard G. Schulze

IPC: H01L31/00 ,  H01J1/34 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A high efficiency UV responsive negative electron affinity photocathode with the long wavelength cutoff tunable over the wavelength from .about.200 to .about.300 nm based on Al.sub.x Ga.sub.1-x N. Negative electron affinity photocathodes for sharply enhanced photoemission yield can be formed by applying a layer of cesium to the surface of Al.sub.x Ga.sub.1-x N for which the Fermi energy level is appropriately positioned.

Abstract translation: 基于AlxGa1-xN，具有长波长截止频率的高效紫外响应负电子亲和光电阴极可调谐于波长从差分200到差分300nm。 可以通过在适当定位费米能级的Al x Ga 1-x N的表面上施加一层铯来形成用于急剧增强的光电子产率的负电子亲和光电阴极。

公开(公告)号：US4460831A

公开(公告)日：1984-07-17

申请号：US525514

申请日：1983-08-22

Applicant: Peter E. Oettinger ,  Chunghsin Lee

Inventor： Peter E. Oettinger ,  Chunghsin Lee

IPC: H01J9/12 ,  H01J37/073 ,  H01J37/317 ,  G21K5/04 ,  H01J40/06 ,  H01J40/16

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J9/12 ,  H01J2201/3423 ,  H01J2201/3426 ,  H01J2237/061 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: An electron beam generator particularly adapted for direct-write semiconductor lithography applications is disclosed which includes a photoemissive cathode, a modulable laser for illuminating the photoemissive cathode, and light optics to create an optical pattern on the cathode. The photoemissive cathode is composed of a light transmissive substrate onto which is deposited an optically semitransparent, electrically conductive film. This film in turn is coated with a thin layer of a photoemissive substance such as cesium antimonide so that the photoemissive cathode emits an intense and substantially monochromatic beam of electrons upon laser light illumination. The emitted electron beam is configured in accordance with the optical pattern created on the cathode, and in passing through successive electron optical devices is further shaped and sized for use, for example, in lithographically generating very large scale integrated (VLSI) circuits on semiconductors.

Abstract translation: 公开了一种特别适用于直写半导体光刻应用的电子束发生器，其包括光发射阴极，用于照射光发射阴极的可调激光器，以及用于在阴极上产生光学图案的光学光学器件。 光发射阴极由其上沉积有光学半透明导电膜的透光基板组成。 该薄膜依次涂覆有诸如锑化锑的光发射物质的薄层，使得在激光照明下，光发射阴极发射强烈且基本上单色的电子束。 发射的电子束根据在阴极上产生的光学图案来配置，并且通过连续的电子光学器件进一步成型和定尺寸以用于例如在半导体上平版印刷生成非常大规模的集成（VLSI）电路。

公开(公告)号：US4286373A

公开(公告)日：1981-09-01

申请号：US110513

申请日：1980-01-08

Applicant: William A. Gutierrez ,  Herbert L. Wilson ,  Edward M. Yee

Inventor： William A. Gutierrez ,  Herbert L. Wilson ,  Edward M. Yee

IPC: H01J1/34 ,  H01L31/18

CPC classification number: H01J9/233 ,  H01J1/34 ,  H01J2201/3423

Abstract: A method of making transmission mode glass-sealed negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes, utilizing germanium (Ge) as the seed crystal and multilayers of GaAs and gallium aluminum arsenide (GaAlAs) grown by metal alkyl-hydride vapor-phase epitaxy. The GaAs serves as the photoemitting layer and the GaAlAs serves as the passivating layer. The Ge, GaAs,GaAlAs combination is sealed to a glass support substrate which serves as the input window for the device. Finally, the Ge is removed and the GaAs is activated.

Abstract translation: 利用锗（Ge）作为晶种制造透射模式玻璃密封负电子亲合力（NEA）砷化镓（GaAs）光电阴极的方法，以及通过金属烷基氢化物气相生长的GaAs和砷化镓铝（GaAlAs） 相外延。 GaAs用作光发射层，GaAlAs用作钝化层。 Ge，GaAs，GaAlAs组合被密封到用作器件的输入窗口的玻璃支撑衬底上。 最后，除去Ge并激活GaAs。

公开(公告)号：US4060823A

公开(公告)日：1977-11-29

申请号：US675693

申请日：1976-04-09

Applicant: Jonathan Ross Howorth ,  Alan Jerome Goss ,  Peter James Pool

Inventor： Jonathan Ross Howorth ,  Alan Jerome Goss ,  Peter James Pool

IPC: H01J1/32 ,  H01J1/34 ,  H01L27/14

CPC classification number: H01J1/32 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron-emissive semiconductor device such as a photocathode or an electron multiplier, consists of separate regions of semiconductor material spaced apart by a barrier which reduces current flow between the regions. The barriers improve the performance of the device by preventing excess electron emission currents and reduce image spreading.

Abstract translation: 诸如光电阴极或电子倍增器的电子发射半导体器件由分隔开的屏障分隔的半导体材料区域组成，这些区域减少了区域之间的电流。 屏障通过防止过量的电子发射电流并减少图像扩散来提高器件的性能。

公开(公告)号：US3988497A

公开(公告)日：1976-10-26

申请号：US516474

申请日：1974-10-21

Applicant: Norio Asakura

Inventor： Norio Asakura

IPC: H01J1/34 ,  B32B3/10 ,  H01J31/38 ,  H01J39/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/153 ,  Y10S428/913 ,  Y10S438/964 ,  Y10T428/31

Abstract: The photoelectric surface of a photocathode made of a semiconductor single crystal is made minutely rough and, accordingly, lusterless, so that the transmissivity of a polarized light beam incident on the photoelectric surface is almost unaffected by the direction of electric field vector of the beam.

Abstract translation: 由半导体单晶制成的光电阴极的光电面被精细地粗糙化，因此无光泽，使得入射在光电表面上的偏振光束的透射率几乎不受光束的电场矢量的方向的影响。

公开(公告)号：USB517762I5

公开(公告)日：1976-03-16

申请号：US51776274

申请日：1974-10-24

IPC: H01J1/32 ,  H01J1/34

CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J2201/3423

公开(公告)号：US3894295A

公开(公告)日：1975-07-08

申请号：US39848073

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H04N5/335 ,  H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L31/112 ,  H01L31/14 ,  H01L31/153 ,  H01L15/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: An image intensifier or converter is described comprising an array of JFETs having separate gates which when pulsed block the channel of the associated JFET. Each JFET is connected in series with a display element, such as an electroluminescent diode. Incident imaging photons absorbed in the channel regions unblock the associated FET causing radiation emission from the associated display element.

Abstract translation: 描述了一种图像增强器或转换器，其包括具有分离的栅极的JFET阵列，当脉冲阻挡相关JFET的沟道时。 每个JFET与诸如电致发光二极管的显示元件串联连接。 在通道区域中吸收的入射成像光子解除阻塞相关联的FET，从而引起来自相关显示元件的辐射。

公开(公告)号：US3809941A

公开(公告)日：1974-05-07

申请号：US27077472

申请日：1972-07-11

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： BOURG H ,  CROMWELL R ,  BURNIE G ,  NICHOLSON J

IPC: H01J1/34

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  H01J2201/3425

Abstract: A photoemitter of improved quantum efficiency is formed by smoke or low density deposition of photoemissive materials on a substrate. Significantly, the photoemissive layer is deposited in the presence of a low pressure gas to form a layer whose density is not greater than 20% and preferably not greater than 5% of the photoemissive material in its bulk form. Individual particle size is controlled and deposited particles are isolated, affording greater surface contact area with the subsequently deposited constituent materials of the photoemissive surface, thereby enhancing interaction and increasing the photoelectron emission. The low density, randomly oriented smoke deposits provide a photosensitive surface characterized by high absorption, low reflective losses, and low transmissive losses. The spectral response curve of smoke photoemitters peaks further into the red or near infrared region than prior art devices, rendering the smoke photoemitters of the invention ideally suited for use as near infrared sensors in low light level imaging system.

Abstract translation: 通过烟雾或光致发光材料在衬底上的低密度沉积形成提高量子效率的光电发生器。 重要的是，在低压气体的存在下沉积光发射层以形成密度不大于散装形式的光发射材料的20％，优选不大于5％的层。 单独的粒度被控制，并且沉积的颗粒被分离，与随后沉积的光发射表面的构成材料提供更大的表面接触面积，从而增强相互作用并增加光电子发射。 低密度，随机取向的烟雾沉积物提供了以高吸收，低反射损失和低透射损耗为特征的感光表面。 烟雾光谱仪的光谱响应曲线比现有技术的装置进一步高于红色或近红外区域，使得本发明的烟雾发光体理想地适合用作低光级成像系统中的近红外传感器。

公开(公告)号：US3699401A

公开(公告)日：1972-10-17

申请号：US3699401D

申请日：1971-05-11

Applicant: RCA CORP

Inventor： TIETJFN JAMES JOSEPH ,  WILLIAMS BROWN F ,  WANG CHIN CHUN

IPC: H01J1/34 ,  H01J29/38 ,  H01L21/205 ,  H01L15/00

CPC classification number: H01J29/38 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/056 ,  Y10S148/059 ,  Y10S148/064 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/115 ,  Y10S148/119 ,  Y10S148/12 ,  Y10S148/15

Abstract: A transmissive semiconductor photocathode structure comprising a first monocrystalline epitaxial layer of silicon or germanium about 200 to 300 nanometers thick on a major surface of a transparent monocrystalline dielectric substrate. On the silicon or germanium layer is a second monocrystalline epitaxial layer of a III-V or II-VI semiconductor compound having a thickness of at least about three microns. On the second layer is a third monocrystalline epitaxial layer of a III-V semiconductor compound having an energy bandgap smaller than the second layer compound and having a thickness on the order of from about one micron to about five microns. Also disclosed is a photoemissive electron tube utilizing the transmissive photocathode structure, with a work function reducing material deposited on the emissive surface of the third layer.

Abstract translation: 一种透射半导体光电阴极结构，其包括在透明单晶电介质基底的主表面上的约200至300纳米厚的硅或锗的第一单晶外延层。 硅或锗层是具有至少约三微米厚度的III-V或II-VI半导体化合物的第二单晶外延层。 在第二层上是III-V半导体化合物的第三单晶外延层，其具有小于第二层化合物的能带隙，并且具有约1微米至约5微米的厚度。