公开(公告)号：US20090289185A1

公开(公告)日：2009-11-26

申请号：US12133298

申请日：2008-06-04

Applicant: Juergen FROSIEN ,  Dieter WINKLER ,  Udo WEIGEL ,  Stefan GRIMM

Inventor： Juergen FROSIEN ,  Dieter WINKLER ,  Udo WEIGEL ,  Stefan GRIMM

IPC: G01N23/00

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/244 ,  H01J2237/24514 ,  H01J2237/24535 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/2594 ,  H01J2237/2623 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission centre of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Abstract translation: 描述了一种聚焦离子束装置，其包括气体离子源，其具有用于分析和分类样品结构的分析器，用于根据分析仪的分析来控制和/或改变样品的结构的控制器，发射器尖端 发射极尖端具有包括第一材料和超高压头的基座尖端，所述第一材料和第一材料包括不同于所述第一材料的材料，其中所述超高压是单个原子尖端，并且所述基座尖端是单晶基底尖端。 此外，聚焦离子束装置具有探针电流控制和样品充电控制。 提供了一种操作聚焦离子束装置的方法，包括在超高压的单个发射中心和电极之间施加电压，向发射极尖端供应气体，分析和分类样品的结构，以及控制样品的结构 。

公开(公告)号：US07609815B2

公开(公告)日：2009-10-27

申请号：US11757137

申请日：2007-06-01

Applicant: Ka-Ngo Leung ,  Qing Ji ,  William A. Barletta ,  Ximan Jiang ,  Lili Ji

Inventor： Ka-Ngo Leung ,  Qing Ji ,  William A. Barletta ,  Ximan Jiang ,  Lili Ji

IPC: H01J35/06

CPC classification number: G01N23/203 ,  B82Y10/00 ,  B82Y40/00 ,  G01V5/0008 ,  H01J3/025 ,  H01J3/04 ,  H01J27/024 ,  H01J35/00 ,  H01J37/045 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2235/06 ,  H01J2235/068 ,  H01J2237/0435 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/06375 ,  H01J2237/3171

Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

Abstract translation: 公开了用于将子束可控地引导到目标衬底的技术。 子束可以是正离子或电子。 已经表明，可以制造直径为1um的子束，孔径间隔为12μm。 这种子束的阵列可用于无掩模光刻。 通过子束相对于目标衬底的逐步运动，各个器件可以被直接电子束写入。 离子束也可以直接写入。 由于从多焦源提取的子束的高亮度，认为光刻曝光的曝光时间被最小化。 或者，子束可以是撞击高Z材料用于X射线产生的电子，然后准直以提供图案化的X射线曝光，例如在CAT扫描中使用的那些。 这种装置可用于远程检测炸药。

公开(公告)号：US20090183679A1

公开(公告)日：2009-07-23

申请号：US12357538

申请日：2009-01-22

Applicant: Edward McIntyre ,  Richard Goldberg

Inventor： Edward McIntyre ,  Richard Goldberg

IPC: C23C16/452 ,  B01J19/00 ,  B01J19/26

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/0827

Abstract: An ion source is disclosed which includes a gas reaction chamber. The invention also includes a method of converting a gaseous feed material into a tetramer, dimer, other molecule or atomic species by supplying the feed material to the gas reaction chamber wherein the feed material is converted to the appropriate gas species to be supplied to the ion source and ionized. More particularly, the gas reaction chamber is configured to receive hydride and other feed materials in gaseous form, such as, AsH3 or PH3, and generate various molecular and atomic species for use in ion implantation, heretofore unknown. In one embodiment of the invention, the gas is relatively uniformly heated to provide relatively accurate control of the molecular or atomic species generated. In an alternate embodiment of the invention, the gas reaction chamber uses a catalytic surface to convert the feed gas into the different source gas specie required for implantation, such as, hydrides into tetramer molecules. In yet another embodiment of the invention, the gas reaction chamber is configured so that a catalytic (or pyrolytic) reaction occurs in the presence of an appropriate material including glass or metals such as, W, Ta, Mo, stainless steel, ceramics, boron nitride or other refractory metals, raised to an appropriate temperature.

Abstract translation: 公开了一种包括气体反应室的离子源。 本发明还包括通过向气体反应室供应原料而将气体进料转化为四聚体，二聚体，其它分子或原子物质的方法，其中将原料转化为适当的气体物质供给到离子 来源和电离。 更具体地，气体反应室被配置为接收气态形式的氢化物和其它进料物质，例如AsH 3或PH 3，并且生成用于离子注入的各种分子和原子物种，迄今未知。 在本发明的一个实施方案中，气体被相对均匀地加热以提供生成的分子或原子物质的相对精确的控制。 在本发明的替代实施例中，气体反应室使用催化表面将进料气体转化为不同的原料气体物质，例如氢化物转化为四聚体分子。 在本发明的另一个实施方案中，气体反应室被配置为使得在包括玻璃或金属如W，Ta，Mo，不锈钢，陶瓷，硼的合适材料存在下发生催化（或热解）反应 氮化物或其他难熔金属，升至适当的温度。

公开(公告)号：US07564042B2

公开(公告)日：2009-07-21

申请号：US11834561

申请日：2007-08-06

Applicant: Do-Haing Lee ,  Sung-Wook Hwang ,  Chul-Ho Shin

Inventor： Do-Haing Lee ,  Sung-Wook Hwang ,  Chul-Ho Shin

IPC: H05H1/02 ,  H01J3/14 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/24542

Abstract: An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.

Abstract translation: 离子束装置包括等离子体室，其中安装在等离子体室的一端的栅格组件和设置在等离子体室和栅格组件之间的等离子体鞘控制器。 栅格组件包括第一离子提取孔。 等离子体鞘控制器包括比第一离子提取孔小的第二离子提取孔。 当在该构造中使用等离子体鞘控制器时，等离子体的表面具有与控制器相邻的更平面的配置，使得从垂直于等离子体表面的方向从等离子体提取的离子通过网格的孔 组件而不是与栅格组件孔的侧壁碰撞。 还提供了用于形成离子束的半导体制造装置和方法。

公开(公告)号：US07557362B2

公开(公告)日：2009-07-07

申请号：US11678979

申请日：2007-02-26

Applicant: Rustam Yevtukhov ,  Alan V. Hayes ,  Viktor Kanarov ,  Boris L. Druz

Inventor： Rustam Yevtukhov ,  Alan V. Hayes ,  Viktor Kanarov ,  Boris L. Druz

IPC: H01J49/10 ,  H01J1/50 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J27/18 ,  H01J37/3053 ,  H01J37/32422 ,  H01J2237/061 ,  H01J2237/083 ,  H01L21/31105

Abstract: Ion sources and methods for generating an ion beam with a controllable ion current density distribution. The ion source includes a discharge chamber and an electromagnet adapted to generate a magnetic field for changing a density distribution of the plasma inside the discharge chamber and, thereby, to change the ion current density distribution.

Abstract translation: 用于产生具有可控离子电流密度分布的离子束的离子源和方法。 离子源包括放电室和适于产生用于改变放电室内的等离子体的密度分布的磁场的电磁体，从而改变离子电流密度分布。

公开(公告)号：US20090001266A1

公开(公告)日：2009-01-01

申请号：US12209079

申请日：2008-09-11

Applicant: JUERGEN FROSIEN

Inventor： JUERGEN FROSIEN

IPC: G01N23/00

CPC classification number: H01J37/08 ,  H01J37/30 ,  H01J2237/0216 ,  H01J2237/061 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/08 ,  H01J2237/0807 ,  H01J2237/26

Abstract: The present invention provides a charged particle beam apparatus with a charged particle beam source including an emitter with an emitter tip; and supporting member for supporting the emitter. Further, the apparatus includes an emitter location-measuring device for repeatedly measuring the location of the emitter; and a deflector system for compensating variations in the location of the emitter.

Abstract translation: 本发明提供带电粒子束装置，带电粒子束源包括具有发射极尖端的发射极; 以及用于支撑发射器的支撑构件。 此外，该装置包括用于反复测量发射器的位置的发射器位置测量装置; 以及用于补偿发射器位置变化的偏转器系统。

公开(公告)号：US07429743B2

公开(公告)日：2008-09-30

申请号：US11202111

申请日：2005-08-12

Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara

IPC: H01L49/00

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.

Abstract translation: 本发明是提高具有光束的照射系统的光束照射精度的方法。 照射系统包括光束产生源，质量分析装置，光束变换器，高速摆动光束的扫描器，光束并行化装置，加速/减速装置，能量过滤装置和光束监视器。 光束变换器包括垂直聚焦同步四极电磁体syQD和水平聚焦同步四极电磁体syQF。 因此，可以通过扫描仪摆动光束之后，在中心轨迹和外部轨迹之间的范围内校正光束发散角的偏差和光束尺寸的偏差中的至少一个。

公开(公告)号：US20080230713A1

公开(公告)日：2008-09-25

申请号：US11689769

申请日：2007-03-22

Applicant: Yongzhang Huang ,  Neil K. Colvin ,  Kevin J. Hoyt

Inventor： Yongzhang Huang ,  Neil K. Colvin ,  Kevin J. Hoyt

IPC: H01J27/02

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

公开(公告)号：US20080179546A1

公开(公告)日：2008-07-31

申请号：US11834561

申请日：2007-08-06

Applicant: Do-Haing LEE ,  Sung-Wook HWANG ,  Chul-Ho SHIN

Inventor： Do-Haing LEE ,  Sung-Wook HWANG ,  Chul-Ho SHIN

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/24542

Abstract: An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.

Abstract translation: 离子束装置包括等离子体室，其中安装在等离子体室的一端的栅格组件和设置在等离子体室和栅格组件之间的等离子体鞘控制器。 栅格组件包括第一离子提取孔。 等离子体鞘控制器包括比第一离子提取孔小的第二离子提取孔。 当在该构造中使用等离子体鞘控制器时，等离子体的表面具有与控制器相邻的更平面的配置，使得从垂直于等离子体表面的方向从等离子体提取的离子通过网格的孔 组件而不是与栅格组件孔的侧壁碰撞。 还提供了用于形成离子束的半导体制造装置和方法。

公开(公告)号：US20080049888A1

公开(公告)日：2008-02-28

申请号：US11757137

申请日：2007-06-01

Applicant: Ka-Ngo Leung ,  Qing Ji ,  William Barletta ,  Ximan Jiang ,  Lili Ji

Inventor： Ka-Ngo Leung ,  Qing Ji ,  William Barletta ,  Ximan Jiang ,  Lili Ji

IPC: G21K1/02 ,  G01N23/203 ,  H01J37/08

CPC classification number: G01N23/203 ,  B82Y10/00 ,  B82Y40/00 ,  G01V5/0008 ,  H01J3/025 ,  H01J3/04 ,  H01J27/024 ,  H01J35/00 ,  H01J37/045 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2235/06 ,  H01J2235/068 ,  H01J2237/0435 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/06375 ,  H01J2237/3171

Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

Abstract translation: 公开了用于将子束可控地引导到目标衬底的技术。 子束可以是正离子或电子。 已经表明，可以制造直径为1um的子束，孔径间隔为12μm。 这种子束的阵列可用于无掩模光刻。 通过子束相对于目标衬底的逐步运动，各个器件可以被直接电子束写入。 离子束也可以直接写入。 由于从多焦源提取的子束的高亮度，认为光刻曝光的曝光时间被最小化。 或者，子束可以是撞击高Z材料用于X射线产生的电子，然后准直以提供图案化的X射线曝光，例如在CAT扫描中使用的那些。 这种装置可用于远程检测炸药。