公开(公告)号：US20070132198A1

公开(公告)日：2007-06-14

申请号：US11606466

申请日：2006-11-29

申请人： Dong-Ho Lee

发明人： Dong-Ho Lee

IPC分类号： B60G3/26 ,  B62D17/00

CPC分类号： B62D17/00 ,  B60G7/006 ,  B60G2200/10 ,  B60G2200/464 ,  B60G2202/413 ,  B60G2204/148 ,  B60G2204/416 ,  B60G2204/4232 ,  B60G2204/62 ,  B60G2600/182 ,  B60G2800/24

摘要： Disclosed is a caster control apparatus for a suspension of a vehicle. When the vehicle travels on a road which causes a vehicle body to lean to one side, the caster of a lowered wheel is increased, and the caster of a raised wheel is decreased, such that the casters of the wheels on both sides are offset with each other. Therefore, the vehicle is inhibited from leaning due to the lateral slope of the road, and the straight-line stability of the vehicle can be reliably maintained.

摘要翻译： 公开了一种用于车辆悬架的脚轮控制装置。 当车辆在导致车体倾斜到一侧的道路上行驶时，下轮的脚轮增加，并且升轮的脚轮减小，使得两侧的车轮的脚轮偏移 彼此。 因此，由于道路的横向倾斜，车辆被阻止倾斜，能够可靠地保持车辆的直线稳定性。

公开(公告)号：US20070108573A1

公开(公告)日：2007-05-17

申请号：US11448772

申请日：2006-06-08

申请人： Hyun-Soo Chung ,  In-Young Lee ,  Dong-Hyeon Jang ,  Myeong-Soon Park ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  In-Young Lee ,  Dong-Hyeon Jang ,  Myeong-Soon Park ,  Dong-Ho Lee

IPC分类号： H01L23/02

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/10126 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/3025

摘要： A wafer level package may include a semiconductor substrate supporting an electrode pad. A first insulating layer may be provided on the semiconductor substrate. The first insulating layer may include a first opening through which the electrode pad may be exposed. A seed metal layer may be provided on an entire surface of the first insulating layer. A redistribution interconnection metal layer may be provided on the seed metal layer. A second insulating layer may be provided on the redistribution interconnection metal layer. The second insulating layer may have a second opening spaced from the first opening to expose a portion of the redistribution interconnection metal layer. The second insulating layer may surround the redistribution interconnection metal layer. An unwanted portion of seed metal layer may be removed using the second insulating layer as an etch mask.

摘要翻译： 晶片级封装可以包括支撑电极焊盘的半导体衬底。 第一绝缘层可以设置在半导体衬底上。 第一绝缘层可以包括第一开口，电极焊盘可以暴露在第一开口中。 种子金属层可以设置在第一绝缘层的整个表面上。 再分布互连金属层可以设置在种子金属层上。 第二绝缘层可以设置在再分布互连金属层上。 第二绝缘层可以具有与第一开口间隔开的第二开口，以暴露再分布互连金属层的一部分。 第二绝缘层可以包围再分布互连金属层。 可以使用第二绝缘层作为蚀刻掩模去除种子金属层的不需要的部分。

公开(公告)号：US20070096341A1

公开(公告)日：2007-05-03

申请号：US11430900

申请日：2006-05-10

申请人： Hyun-soo Chung ,  Dong-hyeon Jang ,  Dong-ho Lee ,  In-young Lee

发明人： Hyun-soo Chung ,  Dong-hyeon Jang ,  Dong-ho Lee ,  In-young Lee

IPC分类号： H01L23/52

CPC分类号： H01L23/3128 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/06136 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/92147 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

摘要： A ball grid array type board on chip package may include an integrated circuit chip having an active surface that supports a plurality of contact pads. An interposer may be adhered to the active surface of the integrated circuit chip. At least one hole may be provided through the interposer to expose the contact pads. A board, which may have a first surface supporting a plurality of metal lines, may have a second surface adhered to the interposer. The board may have an opening through which the contact pads may be exposed. A plurality of bonding wires may connect the contact pads to the metal lines through the opening.

摘要翻译： 球栅阵列型片上芯片封装可以包括具有支撑多个接触焊盘的有源表面的集成电路芯片。 插入器可以粘附到集成电路芯片的有源表面。 可以通过插入件提供至少一个孔以暴露接触垫。 可以具有支撑多个金属线的第一表面的板可以具有粘附到插入件的第二表面。 板可以具有开口，接触垫可以穿过该开口露出。 多个接合线可以通过开口将接触垫连接到金属线。

公开(公告)号：US07193666B2

公开(公告)日：2007-03-20

申请号：US10980656

申请日：2004-11-03

申请人： Jung-Min Choi ,  Dong-Ho Lee

发明人： Jung-Min Choi ,  Dong-Ho Lee

IPC分类号： G02F1/1347

CPC分类号： G02B6/0063 ,  G02B5/3083 ,  G02B6/0043 ,  G02B6/0061 ,  G02F1/133605 ,  G02F1/133615 ,  G02F2001/133342 ,  G02F2001/133507

摘要： Disclosed is an LCD device for performing bi-directional display. The LCD device includes first and second display units, and a light supplying unit. The first display unit includes an LCD panel and a transflective film that is disposed under the LCD panel and has layers in which first and second layers having different refractivity indexes are alternately stacked. The transflective film partially reflects and transmits light incident onto the film. The light supplying unit is disposed between the first and second display units, and provide the first and second display units with light generated from a lamp by dividing the light, to thereby regulate a contrast ratio of a luminance between the first and second display units. Therefore, the structure of an LCD panel for performing bi-directional image display can be simplified, and the light loss in the transmission mode can be reduced.

摘要翻译： 公开了一种用于执行双向显示的LCD装置。 LCD装置包括第一和第二显示单元和一个供光单元。 第一显示单元包括LCD面板和半透反射膜，该半透反射膜设置在LCD面板的下面，并且具有层，其中具有不同折射率指数的第一和第二层交替堆叠。 透反射膜部分地反射和透射入射到膜上的光。 光供给单元设置在第一显示单元和第二显示单元之间，并且通过分割光来为第一和第二显示单元提供由灯产生的光，从而调节第一和第二显示单元之间的亮度的对比度。 因此，可以简化用于执行双向图像显示的LCD面板的结构，并且可以减少传输模式中的光损失。

公开(公告)号：US20070045836A1

公开(公告)日：2007-03-01

申请号：US11436822

申请日：2006-05-18

申请人： Yong-Chai Kwon ,  Kang-Wook Lee ,  Keum-Hee Ma ,  Seong-Il Han ,  Dong-Ho Lee

发明人： Yong-Chai Kwon ,  Kang-Wook Lee ,  Keum-Hee Ma ,  Seong-Il Han ,  Dong-Ho Lee

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/31 ,  H01L24/83 ,  H01L24/90 ,  H01L24/94 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/02311 ,  H01L2224/02321 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08112 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/81141 ,  H01L2224/83136 ,  H01L2224/83194 ,  H01L2224/838 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/05552

摘要： In a stacked chip configuration, and manufacturing methods thereof, the gap between a lower chip and an upper chip is filled completely using a relatively simple process that eliminates voids between the lower and upper chips and the cracking and delamination problems associated with voids. The present invention is applicable to both chip-level bonding and wafer-level bonding approaches. A photosensitive polymer layer is applied to a first chip, or wafer, prior to stacking the chips or stacking the wafers. The photosensitive polymer layer is partially cured, so that the photosensitive polymer layer is made to be structurally stable, while retaining its adhesive properties. The second chip, or wafer, is stacked, aligned, and bonded to the first chip, or wafer, and the photosensitive polymer layer is then cured to fully bond the first and second chips, or wafers. In this manner, adhesion between chips/wafers is greatly improved, while providing complete fill of the gap. In addition, mechanical reliability is improved and CTE mismatch is reduced, alleviating the problems associated with warping, cracking and delamination, and leading to an improvement in device yield and device reliability.

摘要翻译： 在堆叠式芯片结构及其制造方法中，使用消除下部和上部芯片之间的空隙以及与空隙相关的开裂和分层问题的相对简单的工艺，完全填充下部芯片和上部芯片之间的间隙。 本发明可应用于芯片级接合和晶片级接合方式。 在堆叠芯片或堆叠晶片之前，将光敏聚合物层施加到第一芯片或晶片。 感光性聚合物层被部分固化，使得光敏聚合物层在结构上稳定，同时保持其粘合性能。 第二芯片或晶片被堆叠，对准并且结合到第一芯片或晶片，然后使光敏聚合物层固化以完全结合第一和​​第二芯片或晶片。 以这种方式，在提供间隙的完全填充的同时，大大提高了芯片/晶片之间的粘附。 另外，提高了机械可靠性，降低了CTE失配，缓解了翘曲，开裂，脱层等问题，提高了设备​​的产量和设备的可靠性。

公开(公告)号：US20060192747A1

公开(公告)日：2006-08-31

申请号：US10552088

申请日：2004-03-16

申请人： Jong-Soo Yoon ,  Dong-Ho Lee

发明人： Jong-Soo Yoon ,  Dong-Ho Lee

IPC分类号： G09G3/36

CPC分类号： G09G3/3413 ,  G02F1/133555 ,  G02F2001/133342 ,  G02F2001/133622 ,  G02F2001/133626 ,  G02F2201/40 ,  G09G3/3406 ,  G09G3/342 ,  G09G3/3648 ,  G09G2300/023 ,  G09G2300/0456 ,  G09G2310/0235 ,  G09G2310/024

摘要： In an LCD apparatus (400) having simplified structure and improved luminance, a light supplying unit (100) supplies an LCD panel (280) with red light during a time corresponding to one-third of a frame, green light during the time and blue light during the time. A light reflective-transmissive unit is disposed between the light supplying unit (100) and the LCD panel assembly (200) to transmit the red light, the green light and the blue light and to reflect an external light from exterior of the LCD panel assembly (200). The LCD apparatus displays an image by means of white light as well as red light, green light and blue light, thereby improving luminance and simplifying structure.

摘要翻译： 在具有简化的结构和改善的亮度的LCD装置（400）中，光供给单元（100）在对应于帧的三分之一的时间期间向LCD面板（280）供应红光，在时间期间为绿色光，蓝色 光在时间。 光反射透射单元设置在光供给单元（100）和LCD面板组件（200）之间以透射红光，绿光和蓝光，并且从LCD面板组件的外部反射外部光 （200）。 LCD装置通过白光以及红光，绿光和蓝光显示图像，从而提高亮度并简化结构。

公开(公告)号：US06706642B2

公开(公告)日：2004-03-16

申请号：US10330565

申请日：2002-12-27

申请人： Dong Ho Lee ,  Jong Woon Park

发明人： Dong Ho Lee ,  Jong Woon Park

IPC分类号： H01L21302

CPC分类号： H01L28/84 ,  H01L21/32135 ,  H01L28/91

摘要： The present invention relates to a method for fabricating semiconductor capacitors, which enables the capacitance of the capacitors to be increased. This method comprises the steps of: forming a cylinder type polycrystalline silicon pattern on a semiconductor substrate; forming an amorphous metal film on the substrate in such a manner that the amorphous metal film covers the polycrystalline silicon pattern; crystallizing the amorphous metal film so as to form grown metal grains and grain boundaries between the metal grains; firstly etching the crystallized metal film by a wet etching process in such a manner that the polycrystalline silicon pattern is selectively exposed due to the difference in the wet etching rate between the metal grains and the grain boundaries; secondly etching the exposed portion of the polycrystalline silicon pattern by a wet etching process so as to form a storage node electrode whose surface has hemispherical grooves; and successively forming a dielectric layer and a plate electrode on the resulting structure in such a manner that they cover the storage node electrode.

摘要翻译： 本发明涉及一种制造半导体电容器的方法，其能够增加电容器的电容。 该方法包括以下步骤：在半导体衬底上形成圆柱型多晶硅图案; 在所述基板上形成非晶金属膜，使得所述非晶金属膜覆盖所述多晶硅图案; 使无定形金属膜结晶化，形成金属颗粒之间生长的金属颗粒和晶界; 首先通过湿式蚀刻工艺蚀刻结晶的金属膜，使得由于金属颗粒和晶界之间的湿蚀刻速率的差异，多晶硅图案被选择性地暴露; 其次通过湿蚀刻工艺蚀刻多晶硅图案的暴露部分，以形成其表面具有半球形凹槽的存储节点电极; 并且在所得到的结构上依次形成介电层和平板电极，使得它们覆盖存储节点电极。

公开(公告)号：US06567432B1

公开(公告)日：2003-05-20

申请号：US09482351

申请日：2000-01-14

申请人： Seung Kwan Kim ,  Dong Ho Lee ,  Jae Geun Kim

发明人： Seung Kwan Kim ,  Dong Ho Lee ,  Jae Geun Kim

IPC分类号： H01S330

CPC分类号： H01S3/067 ,  G02B6/2766 ,  G02B6/29319 ,  G02B6/2935 ,  G02B6/29358 ,  G02B6/29391 ,  H01S3/06712 ,  H01S3/0675 ,  H01S3/06791 ,  H01S3/10023 ,  H01S3/1068 ,  H01S3/108 ,  H01S2301/04

摘要： A multichannel fiber laser whose wavelength range is expansible to increase the number of lasing channel, and whose channel output powers are equalized, in order to provide a useful multichannel laser source having a wide bandwidth is described. The laser comprises a gain offering means; a gain equalizing means; and a resonating means. In addition, a method for designing the spectral profile of a gain equalizing filter for the purpose of this invention is described.

摘要翻译： 描述了波长范围可扩展以增加激光通道数量并且其通道输出功率均衡的多通道光纤激光器，以便提供具有宽带宽的有用的多通道激光源。 激光器包括增益提供装置; 增益均衡手段; 和谐振装置。 另外，为了本发明的目的，描述了一种用于设计增益均衡滤波器的频谱分布的方法。

公开(公告)号：US6010974A

公开(公告)日：2000-01-04

申请号：US844109

申请日：1997-04-28

申请人： Hyun-Joon Kim ,  Yi-yeol Lyu ,  Dong-ho Lee

发明人： Hyun-Joon Kim ,  Yi-yeol Lyu ,  Dong-ho Lee

IPC分类号： B01J31/22 ,  C07F17/00 ,  C08F12/04 ,  B01J31/00 ,  C07F7/00 ,  C07F7/28

CPC分类号： B01J31/146 ,  B01J31/1616 ,  B01J31/2295 ,  C07F17/00 ,  C08F12/04 ,  B01J2531/0205 ,  B01J2531/40 ,  B01J2531/46 ,  B01J2531/48 ,  C08F2410/03 ,  C08F4/65912 ,  C08F4/6592 ,  C08F4/65922 ,  Y10S526/943

摘要： An alkylene and/or silylene bridged binuclear metallocene catalyst for styrene polymerization is represented by the following formula (I): ##STR1## where M.sup.1 and M.sup.2 are the same or different transition metal of Group IVb of the Periodic Table; Cp.sup.1 and Cp.sup.2 are the same or different cyclopentadienyl; alkyl, alkoxy, silyl or halogen substituted cyclopentadienyl; indenyl; alkyl, alkoxy, silyl or halogen substituted indenyl; fluorenyl; or alkyl, alkoxy, silyl or halogen substituted fluorenyl, which is capable of .pi.-electron, .eta..sup.5 -bonding with M.sup.1 or M.sup.2 ; each of E.sup.1, E.sup.2 and E.sup.3, independently of one another, is a carbon atom or a silicon atom; m, p and q are integers of 0 to 15 and m+p+q.gtoreq.1; each of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6, independently of one another, is a hydrogen, an alkyl, an aryl, an alkoxy or a halogen; X is a hydrogen, an alkyl, an alkoxy or a halogen; and n is 3. M.sup.1 and M.sup.2 may also be in cardin form by mixture of (I) with a compound which abstructs an X gray from each metal atom and substitution then with non-coordinating anions.

摘要翻译： 用于苯乙烯聚合的亚烷基和/或亚硅烷桥连双核茂金属催化剂由下式（I）表示：其中M1和M2是周期表第IVb族的过渡金属相同或不同的过渡金属; Cp1和Cp2是相同或不同的环戊二烯基; 烷基，烷氧基，甲硅烷基或卤素取代的环戊二烯基; 茚基; 烷基，烷氧基，甲硅烷基或卤素取代的茚基; 芴基; 或与M1或M2键合的烷基，烷氧基，甲硅烷基或卤素取代的芴基，其能够π电子等; E1，E2和E3各自独立地为碳原子或硅原子; m，p和q是0至15的整数，m + p + q> / = 1; R 1，R 2，R 3，R 4，R 5和R 6彼此独立地为氢，烷基，芳基，烷氧基或卤素; X是氢，烷基，烷氧基或卤素; 并且n为3.M1和M2也可以通过（I）与从每个金属原子构成X灰的化合物的混合物以卡因形式，然后用非配位阴离子代替。

公开(公告)号：US5986025A

公开(公告)日：1999-11-16

申请号：US852040

申请日：1997-05-06

申请人： Wan-soo Huh ,  Dong-ho Lee ,  Seok-kyun Noh

发明人： Wan-soo Huh ,  Dong-ho Lee ,  Seok-kyun Noh

IPC分类号： C07F17/00 ,  C08F4/64 ,  C08F4/659 ,  C08F10/00

CPC分类号： C07F17/00 ,  C08F10/00 ,  C08F4/65912 ,  C08F4/65916 ,  Y10S526/943

摘要： A novel metallocene compound and a method for producing a polymer by using the metallocene as a polymerization catalyst. The present catalyst includes a neutral metallocene compound, a cationic metallocene compound, and the compound supported catalyst. The present catalyst can be used to produce a polymer having a characteristic structure and physical properties.

摘要翻译： 一种新型茂金属化合物和通过使用茂金属作为聚合催化剂制备聚合物的方法。 本催化剂包括中性茂金属化合物，阳离子茂金属化合物和化合物负载型催化剂。 本催化剂可用于制备具有特征结构和物理性质的聚合物。