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    Method of manufacturing semiconductor light emitting device
    53.
    发明授权
    Method of manufacturing semiconductor light emitting device 有权
    制造半导体发光器件的方法

    公开(公告)号：US08859314B2

    公开(公告)日：2014-10-14

    申请号：US13523571

    申请日：2012-06-14

    申请人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    发明人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    IPC分类号： H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

    摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

    摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

    Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same
    60.
    发明授权
    Non-volatile semiconductor memory device having ion conductive layer and methods of fabricating and operating the same 有权
    具有离子传导层的非易失性半导体存储器件及其制造和操作方法

    公开(公告)号：US08193569B2

    公开(公告)日：2012-06-05

    申请号：US11508991

    申请日：2006-08-24

    申请人： Jung-hyun Lee

    发明人： Jung-hyun Lee

    IPC分类号： H01L29/76

    CPC分类号： H01L45/145 ,  H01L27/24 ,  H01L45/04

    摘要： A non-volatile semiconductor memory device having an ion conductive layer, and methods of fabricating and operating the same are disclosed. The non-volatile memory device may include a substrate, a switching element formed in the substrate, and a storage node connected to the switching element, the storage node may include a lower electrode connected to the switching element, and used as an ion source; a data storage layer formed on the lower electrode, a portion thereof being spaced from the lower electrode; a side electrode spaced from the lower electrode, a side surface thereof being connected to a portion of the data storage layer spaced from the lower electrode; and an upper electrode formed on the data storage layer, or may include a lower electrode connected to the switching element, and used as an ion source; and a data storage layer formed on the lower electrode; an upper electrode formed on the data storage layer.

    摘要翻译： 公开了具有离子传导层的非易失性半导体存储器件及其制造和操作方法。 非易失性存储器件可以包括衬底，形成在衬底中的开关元件和连接到开关元件的存储节点，存储节点可以包括连接到开关元件的下电极，并用作离子源; 形成在所述下电极上的数据存储层，其一部分与所述下电极间隔开; 与所述下电极间隔开的侧电极，其侧表面与所述数据存储层的与所述下电极间隔开的部分连接; 以及形成在数据存储层上的上电极，或者可以包括连接到开关元件的下电极，并用作离子源; 和形成在下电极上的数据存储层; 形成在数据存储层上的上电极。