公开(公告)号：US11908914B2

公开(公告)日：2024-02-20

申请号：US17376504

申请日：2021-07-15

Applicant: Applied Materials, Inc.

Inventor： Ria Someshwar ,  Seshadri Ganguli ,  Lan Yu ,  Siddarth Krishnan ,  Srinivas Gandikota ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC: H01L29/45 ,  H01L21/324 ,  H01L21/285 ,  H01L29/40 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L29/456 ,  H01L21/28518 ,  H01L21/324 ,  H01L21/823814 ,  H01L29/401 ,  H01L29/45 ,  H01L29/665

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor; pre-cleaning the substrate; depositing a titanium silicide (TiSi) layer on the n transistor and on the p transistor by plasma-enhanced chemical vapor deposition (PECVD); optionally depositing a first barrier layer on the titanium silicide (TiSi) layer and selectively removing the first barrier layer from the p transistor; selectively forming a molybdenum silicide (MoSi) layer on the titanium silicide (TiSi) layer on the n transistor and the p transistor; forming a second barrier layer on the molybdenum silicide (MoSi) layer; and annealing the semiconductor structure. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US11887855B2

公开(公告)日：2024-01-30

申请号：US17223506

申请日：2021-04-06

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/34 ,  C23C16/42

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/4557 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

公开(公告)号：US20230416915A1

公开(公告)日：2023-12-28

申请号：US18208695

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Amit Kumar Roy ,  Shonal Chouksey ,  Seshadri Ganguli ,  Gopi Chandran Ramachandran ,  Srinivas Gandikota

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45553 ,  H01L21/28562 ,  H01L21/0228 ,  C23C16/45529

Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include a first metal. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a metal oxide material on the substrate. The methods may include providing a second precursor to the semiconductor processing chamber. The second precursor may be an oxygen-containing precursor including an alcohol, an alkoxide, a hydroxide, an acetylacetonate, an acetate, a formate, a nitrate, a sulfate, a phosphate, a phosphide, a carbonate, an oxide, an oxynitride, a perchlorate, an oxyhalide, a peroxide, an oxalate, or a phenolate. The methods may include contacting the first portion of the metal oxide material with the second precursor. The contacting may form a metal oxide material.

公开(公告)号：US20230326744A1

公开(公告)日：2023-10-12

申请号：US17714510

申请日：2022-04-06

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Yixiong Yang ,  Srinivas Gandikota ,  Joung Joo Lee ,  Liqi Wu ,  Jie Zhang ,  Tuerxun Ailihumaer ,  Yogesh Sharma

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02266 ,  H01L21/02244 ,  H01L21/76879

Abstract: Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill. The disclosed methods

公开(公告)号：US11776980B2

公开(公告)日：2023-10-03

申请号：US16819023

申请日：2020-03-13

Applicant: Applied Materials, Inc.

Inventor： Luping Li ,  Jacqueline S. Wrench ,  Wen Ting Chen ,  Yixiong Yang ,  In Seok Hwang ,  Shih Chung Chen ,  Srinivas Gandikota

IPC: H01L27/146 ,  C23C16/20 ,  C23C16/14 ,  C23C16/455 ,  H01L21/67

CPC classification number: H01L27/1463 ,  C23C16/14 ,  C23C16/20 ,  C23C16/45553 ,  H01L27/14629 ,  H01L27/14685 ,  H01L21/67167

Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：US11732358B2

公开(公告)日：2023-08-22

申请号：US17889930

申请日：2022-08-17

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Muhammad M. Rasheed ,  Mario D. Sanchez ,  Srinivas Gandikota ,  Wei V. Tang

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/50 ,  C23C16/52

Abstract: Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.

公开(公告)号：US11621226B2

公开(公告)日：2023-04-04

申请号：US17171432

申请日：2021-02-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/26 ,  H10B69/00 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US20220389568A1

公开(公告)日：2022-12-08

申请号：US17835463

申请日：2022-06-08

Applicant: Applied Materials, Inc.

Inventor： Subramanian Tamilmani ,  Srinivas Gandikota ,  Jianqiu Guo ,  Luping Li

IPC: C23C16/04 ,  C23C16/52 ,  C23C16/455 ,  C23C16/30

Abstract: Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.

公开(公告)号：US11476267B2

公开(公告)日：2022-10-18

申请号：US16876280

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Wu ,  Wei V. Tang ,  Srinivas Gandikota ,  Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/311 ,  H01L27/11556 ,  H01L21/67 ,  C23C16/06 ,  C23C16/50 ,  C23C16/455 ,  H01L29/423

Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

公开(公告)号：US20220278108A1

公开(公告)日：2022-09-01

申请号：US17335287

申请日：2021-06-01

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Jacqueline S. Wrench ,  Yong Yang ,  Srinivas Gandikota ,  Annamalai Lakshmanan ,  Joung Joo Lee ,  Feihu Wang ,  Seshadri Ganguli

IPC: H01L27/108 ,  H01L21/285

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.