公开(公告)号：US06734503B2

公开(公告)日：2004-05-11

申请号：US10211340

申请日：2002-08-05

申请人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

发明人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

IPC分类号： H01L2701

CPC分类号： H01S5/32341 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/3203 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.

摘要翻译： 可以获得能够有效地防止第一区域的氮化物系半导体层破裂并降低基板的翘曲程度的氮化物系半导体元件。 这种氮化物基半导体元件包括形成在基板的规定区域上的第一区域，并且设置有包括具有规定厚度的第一氮化物基半导体层和形成在基板以外的第一区域的第一区域 并且设置有厚度小于第一区域中的厚度的第一氮化物基半导体层。 因此，应变容易地集中到具有较小厚度的设置有第一氮化物基半导体层的第二区域，由此放置元件的第一区域的应变松弛。

公开(公告)号：US06720196B2

公开(公告)日：2004-04-13

申请号：US10138420

申请日：2002-05-06

申请人： Tatsuya Kunisato ,  Yasuhiko Nomura ,  Takashi Kano ,  Hiroki Ohbo ,  Masayuki Hata

发明人： Tatsuya Kunisato ,  Yasuhiko Nomura ,  Takashi Kano ,  Hiroki Ohbo ,  Masayuki Hata

IPC分类号： H01L2100

CPC分类号： H01L21/02458 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The number of dislocations is reduced by a single lateral growth and is further reduced due to a dislocation loop effect by the quantum dots, without repeating lateral growth.

摘要翻译： 通过在下层的上表面上横向生长氮化物基半导体层并在横向生长的氮化物基半导体层上形成量子点，形成具有低位错密度的薄氮化物基半导体层。 位错的数量由于单个横向生长而减少，并且由于量子点的位错环效应而进一步减小，而不会重复横向生长。

公开(公告)号：US07773654B2

公开(公告)日：2010-08-10

申请号：US11092947

申请日：2005-03-30

申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/4087

摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.

摘要翻译： 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

公开(公告)号：US20070077669A1

公开(公告)日：2007-04-05

申请号：US11607896

申请日：2006-12-04

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

公开(公告)号：US07769069B2

公开(公告)日：2010-08-03

申请号：US11067472

申请日：2005-02-28

申请人： Yasuhiko Nomura ,  Yasuyuki Bessho ,  Masayuki Hata ,  Tsutomu Yamaguchi

发明人： Yasuhiko Nomura ,  Yasuyuki Bessho ,  Masayuki Hata ,  Tsutomu Yamaguchi

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/221 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/3436 ,  H01S5/4043 ,  H01S5/4087

摘要： Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LD 2 wafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching. A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.

摘要翻译： 整合半导体激光二极管和GaP半导体激光二极管的集成半导体激光二极管模块的寿命提高以及激光二极管的激光特性。 在由GaN衬底上形成的氮化物半导体结构和由铝镓铟磷化物半导体结构制成的LD 2晶片制成的LD 1晶片的接合步骤之前，氮化物半导体结构的谐振器的面 通过蚀刻形成。 在接合步骤之后，通过切割形成铝镓铟磷化物半导体结构的谐振器的一个面。 晶片被接合，使得氮化物半导体结构的谐振器的面和磷化铝镓磷化物半导体结构在谐振器的长度方向上不对准。

公开(公告)号：US07655484B2

公开(公告)日：2010-02-02

申请号：US11114193

申请日：2005-04-26

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US07589357B2

公开(公告)日：2009-09-15

申请号：US11976972

申请日：2007-10-30

申请人： Masayuki Hata ,  Tadao Toda ,  Shigeyuki Okamoto ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Tsutomu Yamaguchi

发明人： Masayuki Hata ,  Tadao Toda ,  Shigeyuki Okamoto ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Tsutomu Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0075 ,  H01L33/0079 ,  H01L2224/48091 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/02276 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12 ,  H01L2924/00014

摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

公开(公告)号：US07372077B2

公开(公告)日：2008-05-13

申请号：US10766031

申请日：2004-01-29

申请人： Masayuki Hata ,  Tadao Toda ,  Shigeyuki Okamoto ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Tsutomu Yamaguchi

发明人： Masayuki Hata ,  Tadao Toda ,  Shigeyuki Okamoto ,  Daijiro Inoue ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Tsutomu Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0075 ,  H01L33/0079 ,  H01L2224/48091 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/02276 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12 ,  H01L2924/00014

摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。

公开(公告)号：US20070235750A1

公开(公告)日：2007-10-11

申请号：US11806709

申请日：2007-06-04

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US20050220159A1

公开(公告)日：2005-10-06

申请号：US11092947

申请日：2005-03-30

申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

IPC分类号： H01S5/40 ,  H01L29/00 ,  H01S5/022

CPC分类号： H01S5/4025 ,  H01L2224/32245 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/4087

摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.

摘要翻译： 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。