Abstract:
A system and method of refreshing a nonvolatile memory having memory cells. The method includes identifying one or more of the memory cells that do not satisfy a data retention test; remapping the one or more identified memory cells from original memory addresses to spare memory addresses; and refreshing the identified memory cells.
Abstract:
An apparatus includes a processing unit and a memory. The processing unit is configured to encode a plurality of bits to obtain a plurality of encoded bits, the processing unit is configured to determine an inversion decision. When the inversion decision indicates that the subset of the encoded bits shall not be inverted, the processing unit is configured to store, as a stored word, bits of the first codeword into the memory. When the inversion decision indicates that the subset of the encoded bits shall be inverted, the processing unit is configured to invert each encoded bit of a subset of the encoded bits to obtain a second codeword and to store the second codeword into the memory.
Abstract:
A circuitry comprising a syndrome generator configured to generate a syndrome based on a parity check matrix and a binary word comprising a first set of bits and a second set of bits is provided. For the first set of bits an error correction of correctable bit errors within the first set is provided by the parity check matrix and for the second set of bits an error detection of a detectable bit errors within the second set is provided by the parity check matrix.
Abstract:
A circuitry for error correction includes a plurality of subcircuits for determining intermediate values Zw0, Zw1, Zw2, Zw3 to be used as coefficients in an error correction expression (z1i, z2i, . . . , zmi)=Zw3·α3ji+Zw2·α2ji+Zw1·αji+Zw0. The intermediate values Zw0, Zw1, Zw2, Zw3 are determined depending on subsyndromes s1, s3, s5 so that in case of a 1-bit, 2-bit, or 3-bit error zi=(z1i, z2i, . . . , zmi)=(0, 0, . . . , 0) when an error occurred in the bit position i, and zi=(z1i, z2i, . . . , zmi)≠(0, 0, . . . , 0) when no error occurred in the bit position i. A correction value Δvi= for the bit position i may then be determined on the basis of the error correction expression evaluated for αji.
Abstract translation:用于纠错的电路包括多个子电路,用于确定要用作纠错表达式(z1i,z2i,...,zmi)= Zw3·α3ji+ Zw2·α2ji中的系数的中间值Zw0,Zw1,Zw2,Zw3 + Zw1·αji+ Zw0。 中间值Zw0,Zw1,Zw2,Zw3根据子信号s1,s3,s5确定,以便在1位,2位或3位错误的情况下zi =(z1i,z2i,..., zi =(z1i,z2i,...,zmi)≠(0,0,...,0)当位位置i发生错误时, 当位位置i没有发生错误时。 然后可以基于针对αji评估的误差校正表达式来确定位位置i的校正值&Dgr; vi =。
Abstract:
A method for accessing a non-volatile memory is presented. The method comprises reading a first memory region of the non-volatile memory and ascertaining whether the first memory region contains a predetermined data pattern. The predetermined data pattern has no influence on resulting error correcting data determined for at least the first memory region. The method also comprises evaluating a data status for a second memory region of the non-volatile memory on the basis of a presence of the predetermined data pattern in the first memory region. A corresponding memory controller is also disclosed.
Abstract:
Embodiments relate to memory devices and methods for firmly programming at least a portion of a plurality of electronically programmable and erasable nonvolatile memory cells in a processing of the nonvolatile memory devices.
Abstract:
One embodiment describes a memory readout circuit. The memory readout circuit includes a readout node having a capacitance that is discharged by the memory cell to read out a memory cell by means of a cell current, a level detector that is configured to provide a digital output signal and to switch over the output signal when the potential of the readout node (due to the discharge of the readout node) crosses a switching threshold (depending on the selection of the level and the polarity downward or upward, that is to say the switching threshold is overshot or undershot), and a control circuit that is configured to set the switching threshold and/or the switching speed of the level detector depending on the cell current.
Abstract:
The determination of a code word is proposed, wherein (i) a bit group of n memory cells is read and n states are determined therefrom, the n states being determined in a time domain for each of at least two k-out-of-n codes, the at least two k-out-of-n codes having different k, (ii) the fact of whether a code word is present is determined for each of the at least two codes on the basis of the states, and (iii) when at least one code word is present, the code word of the k-out-of-n code having the largest k is used.
Abstract:
In a method for accessing memory cells, a first read operation is performed on a first memory cell to read a first data value from the first memory cell. During the first read operation, a first variable current source provides a first assessment current having a first current level to a first bitline coupled to the first memory cell. A second read operation is performed on the first memory cell to read a second data value from the first memory cell. During the second read operation, the first variable current source manipulates the first current level to provide a second current level to the first bitline. A difference between the first current level and the second current level is based on whether the first data value that was read during the first read operation was a first data state or a second data state.
Abstract:
Solutions are proposed related to error detection wherein (i) each byte of a second byte sequence is determined as a function of at least one byte of a first byte sequence, (ii) a byte of the second byte sequence is impermissible if it is not equal to an assigned byte of the first byte sequence and if no error of a predefined error set corrupts this byte to the assigned byte of the first byte sequence, and (iii) at least one error is detected if the second byte sequence is impermissible, the second byte sequence being impermissible if at least one byte of the second byte sequence is impermissible.