公开(公告)号：US20050082655A1

公开(公告)日：2005-04-21

申请号：US10951811

申请日：2004-09-29

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

IPC分类号： H01L27/14 ,  H01L21/60 ,  H01L23/12 ,  H01L23/498 ,  H01L27/146 ,  H01L31/0203 ,  H01L31/04 ,  H01L31/10 ,  H01L29/792

CPC分类号： H01L31/0203 ,  H01L23/49805 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83851 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.

摘要翻译： 本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。 另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。 本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。

公开(公告)号：US20050056842A1

公开(公告)日：2005-03-17

申请号：US10749552

申请日：2004-01-02

申请人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

发明人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/144 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1446 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

摘要翻译： 根据本发明的半导体器件的制造方法包括以下步骤：在第一衬底上依次形成金属膜，绝缘膜和非晶半导体膜; 使金属膜和非晶半导体膜结晶化; 通过使用结晶化的半导体膜作为活性区域形成第一半导体元件; 通过使用粘合剂将支撑件附接到第一半导体元件; 导致金属膜和绝缘膜之间的分离; 将第二基板附接到所述分离的绝缘膜; 通过去除粘合剂来分离载体; 在所述第一半导体元件上形成非晶半导体膜; 以及使用所述非晶半导体膜形成作为有源区的第二半导体元件。

公开(公告)号：US06815259B2

公开(公告)日：2004-11-09

申请号：US09931717

申请日：2001-08-20

申请人： Hideaki Ninomiya ,  Hisao Morooka ,  Yoshihito Yamamoto ,  Kazuo Nishi

发明人： Hideaki Ninomiya ,  Hisao Morooka ,  Yoshihito Yamamoto ,  Kazuo Nishi

IPC分类号： H01L2150

CPC分类号： H01L21/6835 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A frame-shaped holding frame which has a small thermal expansion coefficient is used. When a complex member in which a metal material is impregnated in a ceramic material, which has a smaller thermal expansion coefficient than 10 ppm/° C., is used, a warp and a wrinkle are greatly decreased. In particular, in the case of a material with a thermal expansion coefficient of 6.5 ppm/° C. or smaller, the warp and the wrinkle are not caused. When the flexible substrate is adhered to the holding frame by an adhesive, an adhesion area may be obtained so that a sufficient strength is kept. Also, since the flexible substrate is adhered onto the upper surface of the holding frame, the thickness of the holding frame is independent on fixing of the substrate. The thickness may be set so that a mechanical strength is kept and the substrate is smoothly transferred.

公开(公告)号：US06225552B1

公开(公告)日：2001-05-01

申请号：US09029611

申请日：1998-03-11

申请人： Kazuo Nishi ,  Makoto Hosokawa ,  Yukihiro Isobe ,  Hideaki Ninomiya

发明人： Kazuo Nishi ,  Makoto Hosokawa ,  Yukihiro Isobe ,  Hideaki Ninomiya

IPC分类号： H01L3100

CPC分类号： H01L31/046 ,  G04C10/02 ,  H01L31/0463 ,  H01L31/0465 ,  Y02E10/50

摘要： The invention relates to a desired shaped plane type solar cell. The solar cell includes a plurality of photoelectric conversion devices formed by dividing the plane, a plurality of conductive paths for connecting each of the photoelectric conversion devices to each other in series, the conductive path being provided adjacent to the plurality of photoelectric conversion devices, and two drawing electrodes exposed on an opposite surface to a light irradiated surface, the electrodes being connected to two photoelectric conversion devices on both ends of the photoelectric conversion device connected in series.

摘要翻译： 本发明涉及一种所需的成形平面型太阳能电池。 太阳能电池包括多个光电转换装置，其通过将平面划分成多个导电路径，用于将每个光电转换装置彼此串联连接，导电路径设置成与多个光电转换装置相邻，以及 两个绘制电极在与光照射表面相反的表面上暴露，电极连接到串联连接的光电转换装置两端的两个光电转换装置。

公开(公告)号：US5807440A

公开(公告)日：1998-09-15

申请号：US664434

申请日：1996-06-18

申请人： Yuichi Kubota ,  Kazuo Nishi

发明人： Yuichi Kubota ,  Kazuo Nishi

IPC分类号： H01L31/0216 ,  H01L31/0392 ,  H01L31/048 ,  H01L31/052 ,  H01L31/0232 ,  H01L31/04

CPC分类号： H01L31/048 ,  H01L31/02 ,  H01L31/0445 ,  H01L31/054 ,  H02S40/20 ,  Y02E10/52

摘要： A photovoltaic device is provided which can selectively and stably control the color of an intended exterior surface, particularly a light-incident surface side, of the photovoltaic device, and which exhibits high performance. A diffuser layer is provided on a light incident plane side of the photovoltaic device for scattering and dispersing incident light. By providing a coloring layer thereon to color incident light or using a structure where the diffuser layer itself is colored, reduction of photoelectromotive force performance is minimized while adding color to the photovoltaic device.

摘要翻译： 提供了能够选择性地且稳定地控制光电器件的预期外表面，特别是光入射表面侧的颜色并且表现出高性能的光伏器件。 漫射层设置在光伏器件的光入射平面侧，用于散射和分散入射光。 通过在其上提供着色层以对入射光进行着色或使用其中着色漫射层本身的结构，使光电动势性能的降低最小化，同时向光伏器件增加颜色。

公开(公告)号：US5035753A

公开(公告)日：1991-07-30

申请号：US453310

申请日：1989-12-22

申请人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

发明人： Kunio Suzuki ,  Masayoshi Abe ,  Mikio Kinka ,  Yasuyuki Arai ,  Akemi Satake ,  Kazuo Nishi ,  Shuichi Kugawa ,  Noriya Ishida

IPC分类号： H01L31/04 ,  H01L27/142 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/046 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.

摘要翻译： 太阳能电池包括形成在基板上的多个串联连接的光电转换结构。 转换结构由P型的第一半导体膜，形成在第一半导体膜上的本征半导体膜，使得其一端延伸超过第一半导体膜的端部，第二半导体膜的第二相反电导率 形成在本征半导体膜上，使得其一端延伸超过本征半导体膜的延伸端并与相邻结构的第一半导体膜的端部直接电接触。

公开(公告)号：US09496428B2

公开(公告)日：2016-11-15

申请号：US12820439

申请日：2010-06-22

申请人： Kazuo Nishi ,  Naoto Kusumoto

发明人： Kazuo Nishi ,  Naoto Kusumoto

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/20 ,  H01L31/046

CPC分类号： H01L31/022433 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased.

摘要翻译： 包括第一电极，具有一种导电类型的第一杂质半导体层，本征半导体层，与一种导电类型具有相反导电类型的第二杂质半导体层和透光第二电极的堆叠形成在绝缘体 。 透光第二电极和第二杂质半导体层具有一个或多个开口。 在第二杂质半导体层和本征半导体层之间的界面的水平处，一个开口的一个壁的一部分与相同开口的壁的相对部分之间的最短距离小于孔的扩散长度 本征半导体层。 因此，抑制复合，使得由于开口而产生更多的光载流子作为电流而被取出，从而提高了转换效率。

公开(公告)号：US09413289B2

公开(公告)日：2016-08-09

申请号：US13281479

申请日：2011-10-26

申请人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

发明人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

IPC分类号： H02J1/00 ,  H02J3/00 ,  H02S40/32 ,  H02J1/10 ,  H02J3/38

CPC分类号： H02S40/32 ,  H02J1/10 ,  H02J3/383 ,  Y02E10/563 ,  Y10T307/707

摘要： A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter.

摘要翻译： 光电转换装置包括具有彼此不同的电压 - 电流特性的至少两个光电转换元件。 此外，在可以获得室内光的环境下，其中一个光电转换元件的光电转换效率高于另一光电转换元件的光电转换效率。 此外，另一光电转换元件在可以获得太阳光的环境下具有比一个光电转换元件高的光电转换效率。 此外，通过对应于光电转换元件的至少两个DC-DC转换器之一来调节在至少两个光电转换元件中产生的电力的每个电压。 另外，将一个光电转换元件中产生的部分电力用作至少两个DC-DC转换器的驱动电力。

公开(公告)号：US08192545B2

公开(公告)日：2012-06-05

申请号：US13154503

申请日：2011-06-07

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23C16/458

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US20110303272A1

公开(公告)日：2011-12-15

申请号：US13154990

申请日：2011-06-07

申请人： Kazuo Nishi ,  Takashi Hirose ,  Fumito Isaka ,  Naoto Kusumoto

发明人： Kazuo Nishi ,  Takashi Hirose ,  Fumito Isaka ,  Naoto Kusumoto

IPC分类号： H01L31/075 ,  H01L31/0264

CPC分类号： H01L31/18 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/075 ,  Y02E10/548

摘要： An object is to provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separation process region of a semiconductor film with an insulating resin. A photoelectric conversion device includes a first conductive layer formed over a substrate; first to third semiconductor layers formed over the first conductive layer; a second conductive layer formed over the third semiconductor layer; a first separation groove for separating the first conductive layer and the first to third semiconductor layers into a plurality of pieces; a second separation groove for separating the first to third semiconductor layers into a plurality of pieces; and a third separation groove for separating the second conductive layer into a plurality of pieces. An insulating resin is filled in a structural defect that exists in at least one of the first to third semiconductor layers, and in the first separation groove.

摘要翻译： 本发明的目的是提供一种通过用绝缘树脂填充半导体膜的分离工艺区域尽可能地抑制缺陷的光电转换装置。 光电转换装置包括形成在基板上的第一导电层; 形成在第一导电层上的第一至第三半导体层; 形成在所述第三半导体层上的第二导电层; 第一分离槽，用于将第一导电层和第一至第三半导体层分离成多个片; 第二分离槽，用于将第一至第三半导体层分离成多个片; 以及第三分离槽，用于将第二导电层分离成多个片。 绝缘树脂填充在存在于第一至第三半导体层中的至少一个和第一分离槽中的结构缺陷中。