公开(公告)号：US20100009535A1

公开(公告)日：2010-01-14

申请号：US12562955

申请日：2009-09-18

申请人： Yezdi Dordi ,  John Boyd ,  Fritz Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Alex Yoon

发明人： Yezdi Dordi ,  John Boyd ,  Fritz Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Alex Yoon

IPC分类号： H01L21/768 ,  C23C16/00 ,  C25B9/00

CPC分类号： C23C8/02 ,  C23C8/80 ,  C23C10/02 ,  C23C10/60 ,  C23C16/54 ,  C23C16/56 ,  C23C18/1601 ,  C23C18/1632 ,  C23C18/54 ,  C23C26/00 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873

摘要： This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

摘要翻译： 本发明涉及用于制造半导体器件的方法和系统。 本发明的一个方面是在用于半导体器件金属化的阻挡层上沉积间隙填充铜层的方法。 在一个实施例中，该方法包括在衬底的表面上形成阻挡层，并使阻挡层经受处理条件，以便在阻挡层上形成可移除的钝化表面。 该方法还包括从阻挡层去除钝化表面并将间隙填充铜层沉积到阻挡层上。 本发明的另一方面是用于在用于半导体器件金属化的阻挡层上沉积铜层的集成系统。 在一个实施例中，集成系统包括被配置用于阻挡层沉积和钝化表面形成的至少一个工艺模块和被配置用于钝化表面去除和沉积到阻挡层上的至少一个其它工艺模块。 所述系统还包括至少一个传送模块，所述至少一个传送模块被耦合，使得所述衬底可以在所述模块之间基本上不被暴露于形成氧化物的环境

公开(公告)号：US07625452B2

公开(公告)日：2009-12-01

申请号：US12210198

申请日：2008-09-14

申请人： John M. de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

发明人： John M. de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

IPC分类号： B08B1/02 ,  B08B3/00 ,  B08B9/20 ,  A47L25/00 ,  A47L15/00

CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

摘要： A method for cleaning a substrate is provided. The method includes providing foam to a surface of the substrate, brush scrubbing the surface of the substrate, providing pressure to the foam, and channeling the pressured foam to produce jammed foam, the channeling including channeling the pressured foam into a gap, the gap being defined by a space between a surface of a brush enclosure and the surface of the substrate. The brush scrubbing of the surface of the substrate and the channeling of the pressured foam across the surface of the substrate facilitate particle removal from the surface of the substrate.

摘要翻译： 提供一种清洗基板的方法。 该方法包括向基材的表面提供泡沫，刷洗基材的表面，向泡沫提供压力，以及引导加压的泡沫以产生堵塞的泡沫，所述通道包括将加压泡沫引导到间隙中，所述间隙为 由刷子壳体的表面和基板的表面之间的空间限定。 衬底表面刷毛洗涤和挤压泡沫穿过衬底的表面有助于颗粒从衬底表面移除。

公开(公告)号：US20080057221A1

公开(公告)日：2008-03-06

申请号：US11639752

申请日：2006-12-15

申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin Mooring ,  John Parks ,  William Thie ,  Fritz Redeker ,  Arthur Howald ,  Alan Schoepp ,  David Hemker

发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin Mooring ,  John Parks ,  William Thie ,  Fritz Redeker ,  Arthur Howald ,  Alan Schoepp ,  David Hemker

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： H01L21/67225 ,  H01L21/288 ,  H01L21/6704 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6723 ,  H01L21/76849

摘要： A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions.

摘要翻译： 公开了用于处理衬底的簇结构和方法。 集群架构包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。 实验室环境控制传递模块和一个或多个湿式衬底处理模块被配置为管理第一环境环境。 还提供耦合到实验室环境受控传输模块和一个或多个等离子体处理模块的真空传输模块。 真空转移模块和一个或多个等离子体处理模块被配置成管理第二周边环境。 并且，还包括耦合到真空传输模块和一个或多个环境处理模块的受控环境转移模块。 受控环境传输模块和一个或多个环境处理模块被配置为管理第三环境环境。 因此，集群架构使得能够在第一，第二或第三环境环境中以及在相关联的转换期间对衬底进行受控处理。

公开(公告)号：US07179154B1

公开(公告)日：2007-02-20

申请号：US11242705

申请日：2005-10-03

申请人： John M. Boyd ,  Fritz Redeker ,  Jason Ryder ,  Aleksander Owczarz

发明人： John M. Boyd ,  Fritz Redeker ,  Jason Ryder ,  Aleksander Owczarz

IPC分类号： B24B1/00 ,  B24B7/00

CPC分类号： B24B41/067 ,  B24B9/065

摘要： An apparatus for cleaning a semiconductor wafer edge is provided. The apparatus includes a film with an abrasive layer configured to contact the edge surface of a semiconductor substrate coated with a contaminant residue layer. A first reel having the film wound thereon and a second reel for receiving the film fed from the first reel are included. In one embodiment, a third reel configured to force the abrasive layer of the film against the edge surface of the semiconductor substrate so as to create an area of contact between the abrasive layer and the edge surface of the semiconductor substrate; and a pin that protrudes from to the top surface of the third reel. A system and method for cleaning a semiconductor wafer edge are also provided.

摘要翻译： 提供了一种用于清洁半导体晶片边缘的装置。 该装置包括具有研磨层的膜，该研磨层配置成接触涂覆有污染物残留层的半导体衬底的边缘表面。 包括卷绕在其上的薄膜的第一卷轴和用于接收从第一卷轴供给的薄膜的第二卷轴。 在一个实施例中，第三卷轴被配置成迫使膜的研磨层抵靠半导体衬底的边缘表面，以便产生研磨层与半导体衬底的边缘表面之间的接触面积; 以及从第三卷轴的顶面突出的销。 还提供了用于清洁半导体晶片边缘的系统和方法。

公开(公告)号：US07077725B2

公开(公告)日：2006-07-18

申请号：US09949275

申请日：2001-09-07

申请人： Lizhong Sun ,  Stan Tsai ,  Fritz Redeker

发明人： Lizhong Sun ,  Stan Tsai ,  Fritz Redeker

IPC分类号： B24B1/00

CPC分类号： H01L21/3212 ,  H01L21/32115

摘要： In advanced electrolytic polish (AEP) method, a metal wafer (10) acts as an anodic electrodes and another metal plate (65) is used as a cathodic electrode. A voltage differential is applied to the anode and cathode under a predetermined anodic dissolution current density. This causes a reaction that provides a planarized surface on the metal wafers. Additives are included in the electrolyte solution (55) which adsorb onto the wafer surface urging a higher removal rate at higher spots and a lower removal rate at lower spots. Also, in another embodiment of the present invention is a pulsed-electrolytic process (260) in which positive and negative potentials are applied to the anodic and cathodic electrodes alternately, further encouraging surface planarization. AEP can be used either as a first step followed by a mechanical polish or a second step between initial CMP polish and a third step mechanical polish. The present invention may also be added as a last step of copper electroplating process and so may be used in the manufacture of all kinds of patterned metal wafers.

摘要翻译： 在高级电解抛光（AEP）方法中，金属晶片（10）用作阳极电极，另一金属板（65）用作阴极电极。 在预定的阳极溶解电流密度下，对阳极和阴极施加电压差。 这导致在金属晶片上提供平坦化表面的反应。 添加剂被包括在吸附在晶片表面上的电解质溶液（55）中，促使较高点处的更高的去除率和较低的去除率降低。 此外，在本发明的另一个实施例中，脉冲电解方法（260）其中正电位和负电位交替地施加到阳极和阴极电极，进一步促进了表面平坦化。 AEP可以作为第一步，然后是机械抛光，或者在初始CMP抛光和第三步机械抛光之间使用第二步。 本发明也可以作为铜电镀工艺的最后一步添加，因此可用于制造各种图案化的金属晶片。

公开(公告)号：US20060000494A1

公开(公告)日：2006-01-05

申请号：US10882934

申请日：2004-06-30

申请人： James Garcia ,  Fritz Redeker

发明人： James Garcia ,  Fritz Redeker

IPC分类号： B08B3/02

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B11/02 ,  B08B2203/0229 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/68707

摘要： Provided is a system and method to prevent the transfer of accumulated fluid to wafers during cleaning operations. Specifically, when a wafer is secured by a plurality of self-draining edge wheels, any fluid contacting the self-draining edge wheels is channeled away from the wafer towards a bottom surface of each of the self-draining edge wheels. The channeling occurs by manufacturing the bottom portions of the self-draining edge wheels to have different configurations. The different configurations enhance fluid channeling away from the wafer. To further prevent fluid from wetting a bottom surface of the self-draining edge wheels, an edge wheel dryer can be positioned proximately adjacent to at least one self-draining edge wheel to suction fluid away from the bottom surface by using a vacuum channel of the edge wheel dryer.

摘要翻译： 提供了一种在清洁操作期间防止积聚的流体转移到晶片的系统和方法。 具体地说，当晶片被多个自排水边缘轮固定时，接触自排水边缘轮的任何流体被引导离开晶片朝向每个自排水边缘轮的底表面。 通过制造自排水边缘轮的底部以具有不同的构造而发生沟槽。 不同的配置增强了远离晶片的流体通道。 为了进一步防止流体润湿自排水边缘轮的底部表面，边缘轮干燥器可以被定位成邻近至少一个自排水边缘轮，以通过使用真空通道从底部表面抽吸流体 边缘烘干机。

公开(公告)号：US06322427B1

公开(公告)日：2001-11-27

申请号：US09302530

申请日：1999-04-30

申请人： Shijian Li ,  Sidney Huey ,  Ramin Emami ,  Fritz Redeker ,  John White

发明人： Shijian Li ,  Sidney Huey ,  Ramin Emami ,  Fritz Redeker ,  John White

IPC分类号： B24B100

CPC分类号： B24B53/017 ,  B24B37/042

摘要： The useful lifetime of a fixed abrasive article is extended and wafer-to-wafer uniformity enhanced by preconditioning a fixed abrasive element and/or periodic conditioning after initial wafer polishing. Embodiments include preconditioning by forced removal of an upper binder-rich portion of the fixed abrasive elements to expose abrasive particles having a similar concentration as the bulk concentration at about one half the height of the elements. Embodiments further include periodic conditioning after initial wafer polishing by forced removal of an upper portion of the fixed abrasive elements.

摘要翻译： 固定磨料制品的使用寿命延长，并且通过预先固定研磨元件和/或在初始晶片抛光之后进行周期性调节来提高晶片到晶片的均匀性。 实施例包括通过强制去除固定研磨元件的上部粘结剂丰富部分来预处理，以使具有与元件高度的大约一半高度的体积浓度相似的浓度的磨料颗粒暴露。 实施例还包括通过强制去除固定研磨元件的上部的初始晶片抛光之后的周期性调节。

公开(公告)号：US5882424A

公开(公告)日：1999-03-16

申请号：US786604

申请日：1997-01-21

申请人： Brad Taylor ,  Turgut Sahin ,  Charles Dornfest ,  Fritz Redeker

发明人： Brad Taylor ,  Turgut Sahin ,  Charles Dornfest ,  Fritz Redeker

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01J37/32 ,  B08B5/00 ,  B08B9/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/321 ,  H01J37/32165

摘要： An apparatus and method for cleaning the interior of a vacuum chamber of a plasma reactor which includes introducing an etchant gas through inlet ports into the vacuum chamber and applying RF power to a RF plasma excitation apparatus so as to ignite and sustain a plasma within the chamber. The frequency of the RF signal is less than 1 MHz. Alternately, an apparatus and method for cleaning the aforementioned vacuum chamber where at least two different RF power signals can be employed. In one embodiment of this alternate method the step of applying RF power involves providing a first and second RF signal, where each signal exhibits a different frequency. The first RF signal is of a higher frequency and provided to ignite a plasma within the chamber, and thereafter terminated, whereas the second RF signal is of a lower frequency, less than 1 MHz, and provided to sustain the plasma. In another embodiment, the step of applying RF power again comprises providing separate RF signals, where each signal exhibits a different frequency. However, in this embodiment, the signals are used to generate a mixed frequency RF excitation field from the RF plasma excitation apparatus to ignite and sustain a plasma within the chamber. Here again, the first RF signal is of a higher frequency and the second RF signal is of a lower frequency, i.e. less than 1 MHz.

摘要翻译： 一种用于清洁等离子体反应器的真空室的内部的装置和方法，其包括将蚀刻剂气体通过入口引入真空室中，并将RF功率施加到RF等离子体激发装置，以便点燃和维持腔室内的等离子体 。 RF信号的频率小于1MHz。 或者，用于清洁上述真空室的装置和方法，其中可以采用至少两个不同的RF功率信号。 在该替代方法的一个实施例中，施加RF功率的步骤涉及提供第一和第二RF信号，其中每个信号呈现不同的频率。 第一RF信号具有较高的频率并被提供以点燃室内的等离子体，然后终止，而第二RF信号具有小于1MHz的较低频率，并被提供以维持等离子体。 在另一个实施例中，再次施加RF功率的步骤包括提供单独的RF信号，其中每个信号呈现不同的频率。 然而，在本实施例中，信号用于从RF等离子体激发装置产生混频RF激励场，以点燃和维持室内的等离子体。 这里再次，第一RF信号具有较高频率，第二RF信号具有较低频率，即小于1MHz。

公开(公告)号：US08519461B2

公开(公告)日：2013-08-27

申请号：US13455453

申请日：2012-04-25

申请人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L21/02

CPC分类号： H01L23/48 ,  H01L21/4763 ,  H01L21/76898 ,  H01L2924/14

摘要： Presented are device structures and methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.

摘要翻译： 提出了三维集成电路的器件结构和方法，该三维集成电路包括用于三维集成电路的集成的线通孔的后接后端。 本发明的另一方面包括根据本发明的方法制造的三维集成电路。

公开(公告)号：US20120024230A1

公开(公告)日：2012-02-02

申请号：US13253829

申请日：2011-10-05

申请人： Shijian Li ,  Fritz Redeker ,  Yezdi Dordi

发明人： Shijian Li ,  Fritz Redeker ,  Yezdi Dordi

IPC分类号： H01L21/70 ,  B25B11/00 ,  C23C16/50 ,  C23C16/44 ,  C23C16/458

CPC分类号： H01L21/70 ,  C23C16/045 ,  C23C16/4586 ,  H01L21/67017 ,  H01L21/677 ,  H01L21/6838 ,  H01L21/68714 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T24/44 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention pertains to methods, apparatuses, and systems for fabricating three-dimensional integrated circuits. One or more embodiments of systems, apparatuses, and/or methods according to the present invention are presented.

摘要翻译： 本发明涉及用于制造三维集成电路的方法，装置和系统。 呈现了根据本发明的系统，装置和/或方法的一个或多个实施例。