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    Self-draining edge wheel system and method
    1.
    发明申请
    Self-draining edge wheel system and method 审中-公开
    自排水轮系统及方法

    公开(公告)号：US20060000494A1

    公开(公告)日：2006-01-05

    申请号：US10882934

    申请日：2004-06-30

    申请人： James Garcia ,  Fritz Redeker

    发明人： James Garcia ,  Fritz Redeker

    IPC分类号： B08B3/02

    CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B11/02 ,  B08B2203/0229 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/68707

    摘要： Provided is a system and method to prevent the transfer of accumulated fluid to wafers during cleaning operations. Specifically, when a wafer is secured by a plurality of self-draining edge wheels, any fluid contacting the self-draining edge wheels is channeled away from the wafer towards a bottom surface of each of the self-draining edge wheels. The channeling occurs by manufacturing the bottom portions of the self-draining edge wheels to have different configurations. The different configurations enhance fluid channeling away from the wafer. To further prevent fluid from wetting a bottom surface of the self-draining edge wheels, an edge wheel dryer can be positioned proximately adjacent to at least one self-draining edge wheel to suction fluid away from the bottom surface by using a vacuum channel of the edge wheel dryer.

    摘要翻译： 提供了一种在清洁操作期间防止积聚的流体转移到晶片的系统和方法。 具体地说，当晶片被多个自排水边缘轮固定时，接触自排水边缘轮的任何流体被引导离开晶片朝向每个自排水边缘轮的底表面。 通过制造自排水边缘轮的底部以具有不同的构造而发生沟槽。 不同的配置增强了远离晶片的流体通道。 为了进一步防止流体润湿自排水边缘轮的底部表面，边缘轮干燥器可以被定位成邻近至少一个自排水边缘轮，以通过使用真空通道从底部表面抽吸流体 边缘烘干机。

    METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES
    2.
    发明申请
    METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 失效
    使用大量入口和出口将半导体波形表面干燥的方法保持在接近于波长表面的距离

    公开(公告)号：US20070218653A1

    公开(公告)日：2007-09-20

    申请号：US11750960

    申请日：2007-05-18

    申请人： John de Larios ,  Mike Ravkin ,  Carl Woods ,  Fritz Redeker ,  James Garcia

    发明人： John de Larios ,  Mike Ravkin ,  Carl Woods ,  Fritz Redeker ,  James Garcia

    IPC分类号： H01L21/02

    CPC分类号： H01L21/67051 ,  B08B3/04 ,  G03F7/30 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

    摘要： Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.

    摘要翻译： 提供了通过头部处理基板的方法，该头被配置为与基板的表面紧密非接触地放置。 一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时，将第一流体施加到衬底表面上的管道中。 当第一流体被施加到基板的表面上时，移除被处理，并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间，并且被施加和移除的第一流体限定了 受控半月板 所述方法还包括当限制头部或基底的运动时，将受控弯液面移动到衬底的表面的不同区域上。 受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

    INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES
    5.
    发明申请
    INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES 审中-公开
    综合工具集和工艺在高级纳米电子设备制造过程中保护基底表面湿润清洗和清洁

    公开(公告)号：US20110143553A1

    公开(公告)日：2011-06-16

    申请号：US12965765

    申请日：2010-12-10

    申请人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

    发明人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

    IPC分类号： H01L21/469 ,  B05C3/02 ,  B05C11/00 ,  B05C11/02

    CPC分类号： H01L21/288 ,  C23C18/1642 ,  C23C18/1689 ,  C23C18/1872 ,  H01L21/76849

    摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.

    摘要翻译： 用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。 然后用清洗液在无电沉积模块中冲洗基材的表面。 控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。 将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。 衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。 一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

    Methods of Fabricating a Barrier Layer Over Interconnect Structures in Atomic Deposition Environments
    6.
    发明申请
    Methods of Fabricating a Barrier Layer Over Interconnect Structures in Atomic Deposition Environments 审中-公开
    在原子沉积环境中互连结构上形成阻挡层的方法

    公开(公告)号：US20110065273A1

    公开(公告)日：2011-03-17

    申请号：US12950952

    申请日：2010-11-19

    申请人： Hyungsuk Alexander YOON ,  Fritz Redeker

    发明人： Hyungsuk Alexander YOON ,  Fritz Redeker

    IPC分类号： H01L21/768

    CPC分类号： H01L21/28562 ,  C23C16/029 ,  C23C16/34 ,  C23C16/45529 ,  H01L21/02183 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/76843 ,  H01L21/76846

    摘要： Methods of depositing a barrier layer on an interconnect structure in an atomic deposition environment are provided. One method includes depositing a barrier layer on the interconnect structure with a first nitrogen concentration during a first phase of deposition in the atomic deposition environment, The interconnect structure is formed in a dielectric layer. Then, continuing the deposition of the barrier layer on the interconnect structure with a second nitrogen concentration during a second phase deposition in the atomic deposition environment. The nitrogen concentration step-wisely decreases from the first nitrogen concentration in the first phase of the barrier layer to the second nitrogen concentration in the second phase of the barrier layer, and the first nitrogen concentration is highest where the barrier layer is in contact with the dielectric layer. A copper layer is then formed over the barrier layer, such that a nitrogen concentration in the barrier layer is lowest where the barrier layer is in contact with the copper layer.

    摘要翻译： 提供了在原子沉积环境中在互连结构上沉积势垒层的方法。 一种方法包括在原子沉积环境中的第一沉积阶段期间，在互连结构上沉积具有第一氮浓度的阻挡层。互连结构形成在电介质层中。 然后，在原子沉积环境中的第二相沉积期间，继续以互补结构沉积第二氮浓度。 氮浓度从势垒层的第一相中的第一氮浓度逐渐降低到阻挡层的第二相中的第二氮浓度，并且第一氮浓度最高，其中阻挡层与 电介质层。 然后在阻挡层上形成铜层，使阻挡层中的氮浓度最低，其中阻挡层与铜层接触。

    Methods and systems for low interfacial oxide contact between barrier and copper metallization
    7.
    发明授权
    Methods and systems for low interfacial oxide contact between barrier and copper metallization 有权
    屏障和铜金属化之间的低界面氧化物接触的方法和系统

    公开(公告)号：US07749893B2

    公开(公告)日：2010-07-06

    申请号：US11641361

    申请日：2006-12-18

    申请人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

    发明人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

    IPC分类号： H01L21/4763

    CPC分类号： C25D7/123 ,  C23C18/1653 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C23C28/341 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

    摘要翻译： 本发明涉及用于半导体器件金属化的方法和系统。 本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。 在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。 该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。 该方法还包括在ALD铜上沉积间隙填充铜层。 本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。 在一个实施例中，集成系统包括至少一个阻挡层沉积模块。 该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。 该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。 转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

    Wafer edge surface treatment with liquid meniscus
    8.
    发明授权
    Wafer edge surface treatment with liquid meniscus 失效
    晶圆边缘表面处理液体半月板

    公开(公告)号：US07584761B1

    公开(公告)日：2009-09-08

    申请号：US11292465

    申请日：2005-12-02

    申请人： Seokmin Yun ,  John M. Boyd ,  John M. de Larios ,  Fritz Redeker

    发明人： Seokmin Yun ,  John M. Boyd ,  John M. de Larios ,  Fritz Redeker

    IPC分类号： B08B3/00

    CPC分类号： B08B3/04 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

    摘要： A method for cleaning an edge surface of a semiconductor substrate is disclosed. The proximity head unit is positioned so that the flow head portion and the collection head portion of the proximity head unit are proximate to the edge surface of the semiconductor substrate. The semiconductor substrate is then rotated using one or more powered rollers. During the rotation of the semiconductor substrate, the flow head portion applies a fluid to the edge surface while the collection head portion collects fluid from the edge surface. Additional methods, an apparatuses, and a system for cleaning an edge surface of a semiconductor substrate are also described.

    摘要翻译： 公开了一种用于清洁半导体衬底的边缘表面的方法。 邻近头单元被定位成使得接近头单元的流动头部分和收集头部分靠近半导体衬底的边缘表面。 然后使用一个或多个动力辊旋转半导体衬底。 在半导体基板旋转期间，流动头部向边缘表面施加流体，而收集头部分从边缘表面收集流体。 还描述了另外的方法，装置和用于清洁半导体衬底的边缘表面的系统。

    Apparatus and method for confined area planarization
    9.
    发明申请
    Apparatus and method for confined area planarization 有权
    限制区域平面化的装置和方法

    公开(公告)号：US20070227656A1

    公开(公告)日：2007-10-04

    申请号：US11395881

    申请日：2006-03-31

    申请人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John Larios

    发明人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John Larios

    IPC分类号： H01L21/461 ,  H01L21/306

    CPC分类号： H01L21/32115 ,  C25F7/00

    摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

    摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。