公开(公告)号：US20110156572A1

公开(公告)日：2011-06-30

申请号：US13045148

申请日：2011-03-10

申请人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

发明人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

IPC分类号： H01J1/62 ,  H01J9/00

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention discloses a plurality of interdigitated pixels arranged in an array, having a very low series-resistances with improved current spreading and improved heat-sinking. Each pixel is a square with sides of dimension l. The series resistance is minimized by increasing the perimeter of an active region for the pixels. The series resistance is also minimized by shrinking the space between a mesa and n-contact for each pixel.

摘要翻译： 本发明公开了一种排列成阵列的多个交错像素，具有非常低的串联电阻，具有改进的电流扩散和改善的散热。 每个像素是具有尺寸l的边的正方形。 通过增加像素的有源区域的周长来使串联电阻最小化。 串联电阻也通过缩小每个像素的台面和n接触之间的空间来最小化。

公开(公告)号：US07911126B2

公开(公告)日：2011-03-22

申请号：US12419788

申请日：2009-04-07

申请人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

发明人： Arpan Chakraborty ,  Likun Shen ,  Umesh K. Mishra

IPC分类号： H01J1/62

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/486 ,  H01L33/62 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention discloses a plurality of interdigitated pixels arranged in an array, having a very low series-resistances with improved current spreading and improved heat-sinking. Each pixel is a square with sides of dimension l. The series resistance is minimized by increasing the perimeter of an active region for the pixels. The series resistance is also minimized by shrinking the space between a mesa and n-contact for each pixel.

摘要翻译： 本发明公开了一种排列成阵列的多个交错像素，具有非常低的串联电阻，具有改进的电流扩散和改善的散热。 每个像素是具有尺寸l的边的正方形。 通过增加像素的有源区域的周长来使串联电阻最小化。 串联电阻也通过缩小每个像素的台面和n接触之间的空间来最小化。

公开(公告)号：US20110062449A1

公开(公告)日：2011-03-17

申请号：US12953029

申请日：2010-11-23

申请人： Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L33/30 ,  H01L21/20

CPC分类号： H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US07846757B2

公开(公告)日：2010-12-07

申请号：US11444946

申请日：2006-06-01

申请人： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

发明人： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh Kumar Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  H01L27/15

CPC分类号： H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

摘要： A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US20090236621A1

公开(公告)日：2009-09-24

申请号：US12077638

申请日：2008-03-19

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/22 ,  H01L33/507 ,  H01L2933/0091

摘要： A light emitting diode (LED) device having a low index of refraction spacer layer separating the LED chip and a functional layer. The LED chip has a textured light emission surface to increase light extraction from the chip. The spacer layer has an index of refraction that is lower than both the LED chip and the functional layer. Most of the light generated in the LED chip passes easily into the spacer layer due to the textured surface of the chip. At the interface of the spacer layer and the functional layer the light sees a step-up in index of refraction which facilitates transmission. A portion of the light that has passed into the functional layer will be reflected or scattered back toward the spacer layer where some of it will experience total internal reflection. Total internal reflection at this interface may increase extraction efficiency by reducing the amount of light that re-enters the spacer layer and, ultimately, the LED chip where it may be absorbed. The spacer layer also provides a thermal buffer between the LED chip and the functional layer. Thus, the functional layer, which may be a wavelength conversion layer comprising phosphors, for example, is insulated from direct thermal transfer from the LED chip. The spacer layer can also function as a passivation layer.

摘要翻译： 一种具有分离LED芯片和功能层的低折射率间隔层的发光二极管（LED）装置。 LED芯片具有纹理化的光发射表面，以增加芯片的光提取。 间隔层的折射率低于LED芯片和功能层。 LED芯片中产生的大部分光由于芯片的纹理表面而容易地进入间隔层。 在间隔层和功能层的界面处，光看起来有助于传播的折射率升高。 已经进入功能层的光的一部分将被反射或散射回间隔层，其中一些将经历全内反射。 在该界面处的全内反射可以通过减少重新进入间隔层的光量以及最终可以吸收的LED芯片来提高提取效率。 间隔层还在LED芯片和功能层之间提供热缓冲器。 因此，例如可以是包括磷光体的波长转换层的功能层与来自LED芯片的直接热转移绝缘。 间隔层也可以用作钝化层。

公开(公告)号：US20090146162A1

公开(公告)日：2009-06-11

申请号：US12370479

申请日：2009-02-12

申请人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

发明人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L33/06 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0075 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

公开(公告)号：US20090072254A1

公开(公告)日：2009-03-19

申请号：US11900952

申请日：2007-09-14

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00

CPC分类号： H01L29/2003 ,  H01L33/14 ,  H01L33/32

摘要： A light emitting device comprising a three-dimensional polarization-graded (3DPG) structure that improves lateral current spreading within the device without introducing additional dopant impurities in the epitaxial structures. The 3DPG structure can include a repeatable stack unit that may be repeated several times within the 3DPG. The stack unit includes a compositionally graded layer and a silicon (Si) delta-doped layer. The graded layer is compositionally graded over a distance from a first material to a second material, introducing a polarization-induced bulk charge into the structure. The Si delta-doped layer compensates for back-depletion of the electron gas at the interface of the graded layers and adjacent layers. The 3DPG facilitates lateral current spreading so that current is injected into the entire active region, increasing the number of radiative recombination events in the active region and improving the external quantum efficiency and the wall-plug efficiency of the device.

摘要翻译： 一种包括三维偏振梯度（3DPG）结构的发光器件，其改善了器件内的横向电流扩散，而不在外延结构中引入额外的掺杂杂质。 3DPG结构可以包括可重复的堆叠单元，其可以在3DPG内重复多次。 堆叠单元包括组成梯度层和硅（Si）δ掺杂层。 梯度层在从第一材料到第二材料的一定距离上成分地分级，将极化诱导的体电荷引入结构中。 Si-δ掺杂层补偿了梯度层和相邻层的界面处电子气的反向耗尽。 3DPG有助于横向电流扩展，从而将电流注入整个有源区，增加有源区中的辐射复合事件的数量，并提高器件的外部量子效率和插头效率。

公开(公告)号：US20080308825A1

公开(公告)日：2008-12-18

申请号：US11818818

申请日：2007-06-14

申请人： Arpan Chakraborty ,  Bernd Keller

发明人： Arpan Chakraborty ,  Bernd Keller

IPC分类号： H01L33/00 ,  B29C39/00 ,  B32B5/16

CPC分类号： H01L33/56 ,  H01L25/0753 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/0091 ,  Y10T428/2982 ,  H01L2924/00

摘要： A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.

摘要翻译： 一种发光器件，其具有具有散射特征的密封剂，以调整输出分布图的空间发射图案和色温均匀性。 密封剂由具有光散射性质的材料形成。 这些光散射体的浓度在密封剂内和/或密封剂的表面上在空间上变化。 具有高密度散射体的区域被布置在密封剂中以与在源发射角的期望范围内进入密封剂的光相互作用。 通过增加来自特定发射角范围的光将经历至少一个散射事件的概率，可以调节输出光束的强度和色温分布。

公开(公告)号：US07186302B2

公开(公告)日：2007-03-06

申请号：US11123805

申请日：2005-05-06

申请人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

发明人： Arpan Chakraborty ,  Benjamin A. Haskell ,  Stacia Keller ,  James Stephen Speck ,  Steven P. Denbaars ,  Shuji Nakamura ,  Umesh Kumar Mishra

IPC分类号： H01L29/04

CPC分类号： H01L21/0242 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/0075 ,  H01L33/18 ,  Y10S438/938

摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

公开(公告)号：US09293667B2

公开(公告)日：2016-03-22

申请号：US13211145

申请日：2011-08-16

申请人： Aurelien J. F. David ,  Arpan Chakraborty ,  Michael Ragan Krames ,  Troy Trottier

发明人： Aurelien J. F. David ,  Arpan Chakraborty ,  Michael Ragan Krames ,  Troy Trottier

IPC分类号： H01L27/15 ,  H01L33/32 ,  H01L33/50 ,  C09K11/08 ,  C09K11/77 ,  H01L25/075 ,  H01L33/54

CPC分类号： H01L33/504 ,  C09K11/0883 ,  C09K11/565 ,  C09K11/7721 ,  C09K11/7734 ,  C09K11/7739 ,  C09K11/7774 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/32 ,  H01L33/486 ,  H01L33/50 ,  H01L33/54 ,  H01L2924/0002 ,  Y02B20/181 ,  H01L2924/00

摘要： An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

摘要翻译： 描述了具有多种荧光体的LED泵浦光。 用紫外线和/或紫外线波长发射辐射的LED用于泵浦发射其它颜色的荧光体材料。 布置在不同波长范围内的LED，以减少光吸收并提高光输出效率。