公开(公告)号：US20060046387A1

公开(公告)日：2006-03-02

申请号：US11180172

申请日：2005-07-13

Applicant: Han-Mei Choi ,  Jong-Cheol Lee ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-sun Kim ,  Cha-Young Yoo ,  Sung-Tae Kim

Inventor： Han-Mei Choi ,  Jong-Cheol Lee ,  Seung-Hwan Lee ,  Dae-Sik Choi ,  Ki-Yeon Park ,  Young-sun Kim ,  Cha-Young Yoo ,  Sung-Tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/40114 ,  H01L29/513 ,  H01L29/7881

Abstract: Flash memory devices include a semiconductor substrate having an active region. A gate pattern on the active region includes a floating gate pattern and a control gate pattern with an inter-gate dielectric layer pattern therebetween. The inter-gate dielectric layer pattern includes a plurality of hafnium oxide layers and a plurality of aluminum oxide layers, ones of which are alternately arrayed.

Abstract translation: 闪存器件包括具有有源区的半导体衬底。 有源区上的栅极图案包括浮置栅极图案和其间具有栅极间介电层图案的控制栅极图案。 栅极间电介质层图案包括多个氧化铪层和多个氧化铝层，其中一个氧化铝交替排列。

公开(公告)号：US06946342B2

公开(公告)日：2005-09-20

申请号：US10452979

申请日：2003-06-02

Applicant: Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

Inventor： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC classification number: H01L21/02271 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/40

Abstract: A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

公开(公告)号：US20050031495A1

公开(公告)日：2005-02-10

申请号：US10844136

申请日：2004-05-12

Applicant: Han-Mei Choi ,  Thomas Kwon ,  Jae-Soon Lim ,  Ki-Chul Kim ,  Sung-Tae Kim ,  Young-Sun Kim

Inventor： Han-Mei Choi ,  Thomas Kwon ,  Jae-Soon Lim ,  Ki-Chul Kim ,  Sung-Tae Kim ,  Young-Sun Kim

IPC: H01L21/30 ,  B01B1/00 ,  B01J4/02 ,  B01L3/02 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/448 ,  B01B1/005 ,  B01J4/02 ,  B01J2219/0011 ,  B01J2219/00164 ,  C23C16/45561 ,  Y10T137/0329 ,  Y10T436/2575

Abstract: Liquid chemical delivery systems are provided which include a liquid chemical storage canister, a pressurized gas source that feeds a pressurized gas into the storage canister, a vaporizer that may be used to vaporize the liquid chemical supplied from the storage canister, a delivery line that connects the storage canister to the vaporizer, a liquid mass flow controller that controls the flow rate of the liquid chemical through the delivery line, a reaction chamber that is connected to the vaporizer, and a liquid chemical recycling element that collects at least some of the chemical flowing through the system during periods when the liquid chemical delivery system is isolated from the reaction chamber.

Abstract translation: 提供了液体化学输送系统，其包括液体化学品储存罐，将加压气体进料到储存罐中的加压气体源，可用于蒸发从储存罐供应的液体化学品的蒸发器，连接 储存罐到蒸发器，液体质量流量控制器，其通过输送管线控制液体化学品的流速;连接到蒸发器的反应室;以及液体化学品循环元件，其收集至少一些化学物质 在液体化学品输送系统与反应室隔离的期间流经系统。

公开(公告)号：US06785043B2

公开(公告)日：2004-08-31

申请号：US10236158

申请日：2002-09-06

Applicant: Seong-Taek Hwang ,  Kwan-Woong Song ,  Sung-Tae Kim ,  Young-Hoon Joo ,  Sung-Jin Park

Inventor： Seong-Taek Hwang ,  Kwan-Woong Song ,  Sung-Tae Kim ,  Young-Hoon Joo ,  Sung-Jin Park

IPC: H01S300

CPC classification number: H01S3/06754 ,  H01S3/0057 ,  H01S3/0064 ,  H01S3/06758 ,  H01S3/094003

Abstract: Disclosed is a dispersion-compensated optical-fiber amplifier including a circulator for outputting an optical signal received at a first terminal to a second terminal, while outputting an optical signal received at the second terminal to a third terminal; a first amplifier for amplifying the optical signal from the second terminal and an optical signal reapplied thereto; a dispersion-compensating fiber for compensating for a dispersion occurring in the optical signal received from the first amplifier and an optical signal reapplied thereto; a second amplifier for amplifying the optical signal from the dispersion-compensating fiber and an optical signal reapplied thereto; a splitter installed on the dispersion-compensating fiber and adapted to output to the dispersion-compensating fiber, an optical signal applied thereto and an optical signal reapplied thereto, while outputting a pumping light applied to one end thereof and adapted to pump both the first and second amplifiers to the other end thereof without allowing the pumping light to pass through the dispersion-compensating fiber; and, a reflector for reflecting back an optical signal from the second amplifier, so that the reflected optical signal is reapplied to the second amplifier, the splitter, the first amplifier, and the circulator, in this order.

Abstract translation: 公开了一种色散补偿光纤放大器，包括：循环器，用于将在第一端子处接收的光信号输出到第二端子，同时将在第二端子接收的光信号输出到第三端子; 用于放大来自第二端子的光信号的第一放大器和重新施加到其上的光信号; 用于补偿从第一放大器接收的光信号中出现的色散的色散补偿光纤和重新施加于其上的光信号; 用于放大来自色散补偿光纤的光信号的第二放大器和重新应用于其的光信号; 分散器，其安装在色散补偿光纤上并且适于输出到色散补偿光纤，施加到色散补偿光纤的光信号和重新施加到其上的光信号，同时输出施加到色散补偿光纤的一端的泵浦光，并且适于泵浦第一和 第二放大器到另一端，而不允许泵浦光通过色散补偿光纤; 以及用于反射来自第二放大器的光信号的反射器，使得反射的光信号按照该顺序重新施加到第二放大器，分路器，第一放大器和循环器。

公开(公告)号：US5773051A

公开(公告)日：1998-06-30

申请号：US680121

申请日：1996-07-15

Applicant: Sung-Tae Kim

Inventor： Sung-Tae Kim

IPC: A23K1/00 ,  A23K1/16 ,  A23K1/175 ,  A23K1/18 ,  A23K1/20 ,  A23L1/09 ,  A23L1/05

CPC classification number: A23K50/80 ,  A23K40/20 ,  Y10S426/805

Abstract: A fish-breeding feed which refloats after initially sinking. The fish-breeding feed contains conventional feeds, glucose and other materials which enhance the overall quality of the feed.

Abstract translation: 最初沉没后重新补充的养殖饲料。 鱼饲料含有常规饲料，葡萄糖和其他提高饲料总体质量的物质。

公开(公告)号：US07566608B2

公开(公告)日：2009-07-28

申请号：US11285555

申请日：2005-11-22

Applicant: Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

Inventor： Dae-Sik Choi ,  Kyoung-Ryul Yoon ,  Han-Mei Choi ,  Ki-Yeon Park ,  Seung-Hwan Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo

IPC: H01L21/8238

CPC classification number: H01L21/02205 ,  C23C16/405 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/11521 ,  H01L29/4933 ,  H01L29/517 ,  H01L29/78

Abstract: Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H5)(CH3)}4], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.

Abstract translation: 通过供应四（乙基甲基氨基）锆（[Zr（N（C 2 H 5）（CH 3）} 4]，TEMAZ）和四（乙基甲基氨基）铪（[Hf（N（C 2 H 5））的方式在半导体衬底上形成氧化锆铪薄膜 ）（CH 3）} 4]，TEMAH）。 TEMAZ和TEMAH可与氧化剂反应。 包括氧化铪的薄层可以用于栅极结构中的栅极绝缘层，电容器中的电介质层或闪存器件中的介电层。

公开(公告)号：US20090050210A1

公开(公告)日：2009-02-26

申请号：US12258818

申请日：2008-10-27

Applicant: Han-Mei Choi ,  Thomas Jongwon Kwon ,  Jae-Soon Lim ,  Ki-Chul Kim ,  Sung-Tae Kim ,  Young-Sun Kim

Inventor： Han-Mei Choi ,  Thomas Jongwon Kwon ,  Jae-Soon Lim ,  Ki-Chul Kim ,  Sung-Tae Kim ,  Young-Sun Kim

IPC: G05D7/06 ,  B01F3/04 ,  G05D11/00

CPC classification number: C23C16/448 ,  B01B1/005 ,  B01J4/02 ,  B01J2219/0011 ,  B01J2219/00164 ,  C23C16/45561 ,  Y10T137/0329 ,  Y10T436/2575

Abstract: Liquid chemical delivery systems are provided which include a liquid chemical storage canister, a pressurized gas source that feeds a pressurized gas into the storage canister, a vaporizer that may be used to vaporize the liquid chemical supplied from the storage canister, a delivery line that connects the storage canister to the vaporizer, a liquid mass flow controller that controls the flow rate of the liquid chemical through the delivery line, a reaction chamber that is connected to the vaporizer, and a liquid chemical recycling element that collects at least some of the chemical flowing through the system during periods when the liquid chemical delivery system is isolated from the reaction chamber.

Abstract translation: 提供了液体化学输送系统，其包括液体化学品储存罐，将加压气体进料到储存罐中的加压气体源，可用于蒸发从储存罐供应的液体化学品的蒸发器，连接 储存罐到蒸发器，液体质量流量控制器，其通过输送管线控制液体化学品的流速;连接到蒸发器的反应室;以及液体化学品循环元件，其收集至少一些化学物质 在液体化学品输送系统与反应室隔离的期间流经系统。

公开(公告)号：US07495292B2

公开(公告)日：2009-02-24

申请号：US11713160

申请日：2007-03-02

Applicant: Se-Hoon Oh ,  Jung-Hee Chung ,  Jae-Hyoung Choi ,  Jeong-Sik Choi ,  Sung-Tae Kim ,  Cha-Young Yoo

Inventor： Se-Hoon Oh ,  Jung-Hee Chung ,  Jae-Hyoung Choi ,  Jeong-Sik Choi ,  Sung-Tae Kim ,  Cha-Young Yoo

IPC: H01L29/76

CPC classification number: H01L27/10855 ,  H01L21/76889 ,  H01L21/76895 ,  H01L27/10817 ,  H01L27/10894 ,  H01L27/10897

Abstract: Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.

Abstract translation: 提供集成电路器件，例如动态随机存取存储器（DRAM）器件，其包括具有单元阵列区域和外围电路区域的集成电路衬底。 在单元阵列区域中的集成电路基板上设置埋入式接触插塞，并且在外围电路区域中的集成电路基板上设置电阻器。 第一焊盘接触插头设置在电池阵列区域中的埋入式接触插塞上，并且在外围电路区域中的电阻器上设置第二焊盘接触插头。 在第一焊盘接触插塞和埋地接触插头之间以及第二焊盘接触插头和电阻器之间提供欧姆层。 还提供了制造集成电路器件的相关方法。

公开(公告)号：US07482677B2

公开(公告)日：2009-01-27

申请号：US11339086

申请日：2006-01-25

Applicant: Jong-Cheol Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Gab-Jin Nam ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo ,  Ha-Jin Lim ,  Yun-Seok Kim

Inventor： Jong-Cheol Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Gab-Jin Nam ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo ,  Ha-Jin Lim ,  Yun-Seok Kim

IPC: H01L21/4763

CPC classification number: H01L21/022 ,  H01L21/02142 ,  H01L21/02156 ,  H01L21/02175 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/11502 ,  H01L27/11521

Abstract: In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.

Abstract translation: 在制造电介质结构的方法中，在衬底上形成隧道氧化物层图案之后，在隧道氧化物层上形成浮栅。 在形成包括金属氧化硅和包括金属氮氧化硅的第二电介质层图案的第一电介质层图案之后，在电介质结构上形成控制栅极。 由于介电结构包括至少一个金属氧化硅层和至少一个金属氮氧化硅层，所以介电结构可以具有高介电常数和良好的耐热性。 包括电介质结构的非易失性半导体存储器件可能具有良好的电特性，例如大电容和低漏电流。

公开(公告)号：US07364967B2

公开(公告)日：2008-04-29

申请号：US11266520

申请日：2005-11-03

Applicant: Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

Inventor： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

IPC: H01L21/8242

CPC classification number: H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

Abstract: Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

Abstract translation: 形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分 在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。 存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物 层在氮化钛层上。