公开(公告)号：US06447651B1

公开(公告)日：2002-09-10

申请号：US09800798

申请日：2001-03-07

申请人： Tetsuya Ishikawa ,  Kaveh Niazi ,  Tsutomu Tanaka ,  Canfeng Lai ,  Robert Duncan

发明人： Tetsuya Ishikawa ,  Kaveh Niazi ,  Tsutomu Tanaka ,  Canfeng Lai ,  Robert Duncan

IPC分类号： C23C1435

CPC分类号： C23C16/45508 ,  C23C16/507 ,  C23C16/52

摘要： A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.

摘要翻译： 提供了一种用于在等离子体沉积工艺期间在处理室中在衬底上形成层的方法和装置。 在处理室中形成等离子体，具有适于沉积层的前体气体的工艺气体流入处理室，并且具有小于约0.5高斯的强度的磁场在处理室内衰减。 这种磁场的衰减导致在沉积期间实现的工艺均匀度的改善。

公开(公告)号：US06425276B1

公开(公告)日：2002-07-30

申请号：US09489026

申请日：2000-01-21

申请人： Katsuhiko Hirano ,  Kunio Enomoto ,  Eisaku Hayashi ,  Sadato Shimizu ,  Ren Morinaka ,  Tetsuya Ishikawa ,  Shigeru Tanaka ,  Noboru Chiba

发明人： Katsuhiko Hirano ,  Kunio Enomoto ,  Eisaku Hayashi ,  Sadato Shimizu ,  Ren Morinaka ,  Tetsuya Ishikawa ,  Shigeru Tanaka ,  Noboru Chiba

IPC分类号： B24C100

CPC分类号： B24C1/10 ,  B24C3/04 ,  G21C19/00 ,  G21Y2002/201 ,  G21Y2002/304 ,  G21Y2002/401 ,  G21Y2004/302 ,  G21Y2004/501 ,  G21Y2004/504

摘要： A water jet peening apparatus which can carry out an efficient peening work on a large-diameter cylindrical structure by injecting a jet stream which contains air bubbles caused by cavitation at a low angle of incidence is provided. The apparatus is comprised of a nozzle which introduces a high pressure water and injects a water jet stream containing air bubbles caused by cavitation at the cylindrical structure disposed in water, wherein the angle of injection of the jet stream is smaller than 45 degrees relative to a tangent of the cylindrical structure.

摘要翻译： 提供了一种喷水喷丸处理装置，其能够通过以低入射角注入含有由气蚀引起的气泡的喷射流，对大径圆柱形结构进行高效喷丸处理。 该装置包括一个喷嘴，该喷嘴引入高压水，并且在设置在水中的圆柱形结构处注入含有由空化引起的气泡的水射流，其中喷射流的喷射角度相对于 圆柱形结构的切线。

公开(公告)号：US06416823B2

公开(公告)日：2002-07-09

申请号：US09515574

申请日：2000-02-29

申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

IPC分类号： C23L16455

CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

公开(公告)号：US06348725B1

公开(公告)日：2002-02-19

申请号：US09247381

申请日：1999-02-10

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： H01L2358

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

公开(公告)号：US06303523B1

公开(公告)日：2001-10-16

申请号：US09185555

申请日：1998-11-04

申请人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

发明人： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC分类号： C23C16505

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.

公开(公告)号：US06251187B1

公开(公告)日：2001-06-26

申请号：US09433086

申请日：1999-11-03

申请人： Shijian Li ,  Fred C. Redeker ,  Tetsuya Ishikawa

发明人： Shijian Li ,  Fred C. Redeker ,  Tetsuya Ishikawa

IPC分类号： C23C1600

CPC分类号： C23C16/507 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/3244

摘要： An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).

摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的真空室（18）的壳体（4）。 一组第一喷嘴（34）具有以与基板支撑件的周边（40）间隔开并且通常覆盖基板支撑件的周边（40）的圆周图案而开口进入真空室的孔口（38）。 位于基板支架上方中心的一个或多个秒喷嘴（56,56a）将工艺气体注入真空室以改善沉积厚度均匀性。 通过确保将工艺气体以相同的压力供应到第一喷嘴，也提高了沉积厚度均匀性。 如果需要，可以通过使用真空泵（84）通过喷嘴沿反向流动方向从真空室内缓慢地抽取清洁气体来实现喷嘴的增强清洁。

公开(公告)号：US6070551A

公开(公告)日：2000-06-06

申请号：US851856

申请日：1997-05-06

申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

IPC分类号： C23C16/44 ,  C23C14/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF.sub.4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF.sub.4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

公开(公告)号：US5800621A

公开(公告)日：1998-09-01

申请号：US795169

申请日：1997-02-10

申请人： Fred C. Redeker ,  Tetsuya Ishikawa

发明人： Fred C. Redeker ,  Tetsuya Ishikawa

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/46 ,  C23C16/00

CPC分类号： H01J37/321 ,  H05H1/46 ,  H05H2001/4667

摘要： A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

公开(公告)号：US5572105A

公开(公告)日：1996-11-05

申请号：US363012

申请日：1994-12-23

申请人： Takashi Nojima ,  Akira Miyakawa ,  Soichi Hiramatsu ,  Hideki Yamaguchi ,  Hiroyuki Inoue ,  Kenji Kawazoe ,  Tetsuya Ishikawa ,  Hitoshi Nakamura ,  Akira Kida ,  Hideaki Kawakami

发明人： Takashi Nojima ,  Akira Miyakawa ,  Soichi Hiramatsu ,  Hideki Yamaguchi ,  Hiroyuki Inoue ,  Kenji Kawazoe ,  Tetsuya Ishikawa ,  Hitoshi Nakamura ,  Akira Kida ,  Hideaki Kawakami

IPC分类号： H02P8/18 ,  H02P8/22 ,  H02P8/32 ,  G05B19/40

CPC分类号： H02P8/32 ,  H02P8/22

摘要： A device for controlling the power supplied to windings of a stepping motor includes a pulse generator for splitting one step drive period of the motor into a plurality of sections, the number of sections and increasing or decreasing depending upon the drive frequency. The pulse generator, also sets the duty cycle of a pulse applied to the motor. The device also includes a stepping motor drive circuit for exciting each phase of the motor with a current determined by the duty cycle of pulse, and a duty changing device for changing the duty cycle for each of plural sections in one excitation phase of the stepping motor, wherein a current wave input into the motor can be maintained as a sinusoidal wave from low-speed rotation to high-speed rotation of the motor by changing the number of sections in excitation depending upon serial drive operations, thereby achieving motor control with less rotation inconsistencies and less noise.

摘要翻译： 用于控制提供给步进电机的绕组的功率的装置包括：脉冲发生器，用于将电动机的一个驱动周期分为多个部分，根据驱动频率分段数量增加或减小。 脉冲发生器还设置施加到电机的脉冲的占空比。 该装置还包括步进电动机驱动电路，用于以由脉冲的占空比确定的电流来激励电动机的每相，以及用于改变步进电动机的一个励磁相中的多个部分中的每一个的占空比的占空比变更装置 ，其中输入到电动机的电流波可以通过根据串行驱动操作改变激励部分的数量，将其保持为从低速旋转到电动机的高速旋转的正弦波，从而以较少的旋转实现电动机控制 不一致和噪音较小。

公开(公告)号：US09431477B2

公开(公告)日：2016-08-30

申请号：US13959469

申请日：2013-08-05

申请人： Olga Kryliouk ,  Yuriy Melnik ,  Hidehiro Kojiri ,  Tetsuya Ishikawa

发明人： Olga Kryliouk ,  Yuriy Melnik ,  Hidehiro Kojiri ,  Tetsuya Ishikawa

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L33/00 ,  H01L33/12 ,  H01L33/16 ,  H01L33/22

CPC分类号： H01L29/045 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/04 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/22

摘要： A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.