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271 条记录 (耗时 0.029 秒)

    Light power generation device
    51.
    发明授权
    Light power generation device 有权
    发光装置

    公开(公告)号：US09035170B2

    公开(公告)日：2015-05-19

    申请号：US13637536

    申请日：2011-06-01

    申请人： Jose Briceno ,  Satoru Yamazaki

    发明人： Jose Briceno ,  Satoru Yamazaki

    IPC分类号： H01L31/07 ,  H01L31/0224 ,  H01L31/0236 ,  H02S20/23

    CPC分类号： H01L31/07 ,  H01L31/022425 ,  H01L31/0236 ,  H02S20/23 ,  H02S99/00 ,  Y02B10/12 ,  Y02E10/50 ,  Y02E10/52

    摘要： [Problem] To provide a photovoltaic device capable of generating power whether day or night, without affecting the appearance of a structure or reducing lighting or other functions, and able to inhibit rises in room temperature by converting thermal radiation into electrical energy.[Means to Solve Problems] Provide a photoelectric conversion element 3 with a photovoltaic device 1 on structural members 2a-2d facing the outside of a house or other structure. Power generated by the photoelectric conversion element 3 is extracted via a power extraction unit 4. The power conversion element 3 includes a semiconductor layer 11, conductive layer 20, a metal nanostructure 30 having multiple periodic structures 33, a first electrode 41 and a second electrode 42. The first and second electrodes 41, 42 are separated in the direction of the surface of the photoelectric conversion element 1 with the terminals 71, 81 of the power extraction unit 4 respectively connected.

    摘要翻译： 本发明提供能够不间断地发电的光电器件，而不影响结构的外观或降低照明等功能，能够通过将热辐射转换为电能来抑制室温上升。 解决问题的手段在面向房屋或其他结构的外部的结构构件2a-2d上提供具有光电器件1的光电转换元件3。 通过功率提取单元4提取由光电转换元件3产生的功率。功率转换元件3包括半导体层11，导电层20，具有多个周期性结构的金属纳米结构30，第一电极41和第二电极 第一和第二电极41,42分别连接在电力提取单元4的端子71,81上，在光电转换元件1的表面方向上分开。

    Photodetectors and photovoltaics based on semiconductor nanocrystals
    53.
    发明授权
    Photodetectors and photovoltaics based on semiconductor nanocrystals 有权
    基于半导体纳米晶体的光电检测器和光伏

    公开(公告)号：US08803128B2

    公开(公告)日：2014-08-12

    申请号：US13228197

    申请日：2011-09-08

    申请人： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

    发明人： Edward Hartley Sargent ,  Ghada Koleilat ,  Larissa Levina

    IPC分类号： H01L29/06

    CPC分类号： H01L51/4213 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/07 ,  H01L51/0046 ,  H01L51/0084 ,  H01L51/441 ,  Y02E10/541 ,  Y02P70/521

    摘要： A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

    摘要翻译： 描述复合材料。 复合材料包括半导体纳米晶体和钝化半导体纳米晶体表面的有机分子。 有机分子的一个或多个性质有助于半导体纳米晶体之间的电荷转移。 描述了包括包括半导体纳米晶体的p型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的电子的迁移率大于或等于空穴的迁移率。 描述了包括包括半导体纳米晶体的n型半导体材料的半导体材料。 半导体材料的至少一种性质导致半导体材料中的空穴的迁移率大于或等于电子的迁移率。

    Homogeneous multiple band gap devices
    57.
    发明授权
    Homogeneous multiple band gap devices 有权
    均质多带隙器件

    公开(公告)号：US08624222B2

    公开(公告)日：2014-01-07

    申请号：US13656565

    申请日：2012-10-19

    申请人： University of Utah Research Foundation

    发明人： Feng Liu ,  Ye Zhang ,  Rujie Sun

    IPC分类号： H01L27/142

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L31/032 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/07 ,  H01L31/1013 ,  H01L33/0041 ,  H01L33/08 ,  H01L33/40 ,  Y02E10/52

    摘要： An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.

    摘要翻译： 提供了一种电气装置，其包括（A）具有表面的基板和（B）叠加在所述表面的一部分上的纳米孔超晶格。 纳米孔超晶格包括多个具有限定在其中的孔阵列的片材。 孔阵列的特征在于带隙或带隙范围。 多个片材形成第一边缘和第二边缘。 包括第一导电材料的第一引线与第一边缘形成第一结。 包括第二导电材料的第二引线与第二边缘形成第二结。 第一个结是相对于载体的肖特基势垒。 在一些情况下，金属保护涂层覆盖第一引线的表面的全部或一部分。 在一些情况下，第一引线包括钛，第二引线包括钯，金属保护涂层包括金。

    Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures
    58.
    发明授权
    Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures 有权
    使用高纵横比纳米结构提高效率的光伏器件

    公开(公告)号：US08592675B2

    公开(公告)日：2013-11-26

    申请号：US12039900

    申请日：2008-02-29

    申请人： Supratik Guha ,  Oki Gunawan

    发明人： Supratik Guha ,  Oki Gunawan

    IPC分类号： H01L31/0236

    CPC分类号： H01L31/035227 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/07 ,  H01L31/18 ,  Y02E10/50

    摘要： Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

    摘要翻译： 提供了用于提高效率的光伏器件和技术。 一方面，提供一种光电器件。 光电器件包括具有第一光活性层的光电池和与第一光活性层相邻的第二光活性层，以在第一光活性层和第二光活性层之间形成异质结; 以及在所述第二光敏层的一个或多个表面上的多个高纵横比纳米结构。 多个高纵横比纳米结构被配置为用作入射光的散射介质。 多个高纵横比纳米结构也可以被配置为在入射光中产生光学共振效应。

    Field-Effect P-N Junction
    59.
    发明申请
    Field-Effect P-N Junction 有权
    场效应P-N结

    公开(公告)号：US20130221415A1

    公开(公告)日：2013-08-29

    申请号：US13773985

    申请日：2013-02-22

    申请人： The Regents of the University of California

    发明人： William Regan ,  Alexander Zettl

    IPC分类号： H01L29/68

    CPC分类号： H01L29/68 ,  H01L29/66356 ,  H01L31/06 ,  H01L31/062 ,  H01L31/07 ,  Y02E10/50

    摘要： This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

    摘要翻译： 本公开提供了与场效应p-n结相关的系统，方法和装置。 在一个方面，一种器件包括欧姆接触，设置在欧姆接触上的半导体层，设置在半导体层上的至少一个整流触点，包括设置在至少一个整流触点和半导体层上的层的栅极和 栅极触点设置在层上。 整流触点的横向宽度小于半导体层的半导体耗尽宽度。 栅极触点电连接到欧姆接触，以产生自门控反馈回路，其被配置为保持栅极的栅极电场。

    Super CMOS devices on a microelectronics system
    60.
    发明授权
    Super CMOS devices on a microelectronics system 有权
    超级CMOS器件在微电子系统上

    公开(公告)号：US08476689B2

    公开(公告)日：2013-07-02

    申请号：US12343465

    申请日：2008-12-23

    申请人： Augustine Wei-Chun Chang

    发明人： Augustine Wei-Chun Chang

    IPC分类号： H01L27/092 ,  H01L27/095

    CPC分类号： H01L27/0629 ,  H01L21/8238 ,  H01L25/065 ,  H01L27/0207 ,  H01L27/0727 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/112 ,  H01L27/11253 ,  H01L27/11286 ,  H01L27/11293 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11807 ,  H01L28/20 ,  H01L29/66143 ,  H01L29/872 ,  H01L31/032 ,  H01L31/0376 ,  H01L31/03762 ,  H01L31/07 ,  H01L31/072 ,  H01L31/074 ,  H01L2924/0002 ,  H03K19/17728 ,  Y02E10/50 ,  H01L2924/00

    摘要： A low cost IC solution is disclosed in accordance with an embodiment to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and N- Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros are composed of diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

    摘要翻译： 根据实施例公开了一种低成本的IC解决方案，以提供超级CMOS微电子宏。 在下文中，Super CMOS或Schottky CMOS都是指SCMOS。 具有利基电路元件的SCMOS器件解决方案，由选择的金属屏蔽接触（Co / Ti）到CMOS晶体管的P-和N- Si层制成的互补低阈值肖特基势垒二极管对（SBD）。 一个DTL，像新的电路拓扑，并设计了广泛的产品库内容，它们使用集成的SBD和晶体管（BJT，CMOS和Flash版本）作为基本组件。 这些宏由选择性地连接到晶体管的扩散层的二极管组成，将它们配置成形成通用逻辑门，存储器核和模拟功能块，从简单到复杂，从分立元件到所有级别的VLSI芯片。 太阳能光伏电力转换和生物实验室芯片是SCMOS IC应用的两个新扩展领域。