公开(公告)号：US5844929A

公开(公告)日：1998-12-01

申请号：US700925

申请日：1996-08-23

申请人： Ian F. Lealman ,  Michael J. Robertson ,  Simon D. Perrin

发明人： Ian F. Lealman ,  Michael J. Robertson ,  Simon D. Perrin

IPC分类号： G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  H01S3/05 ,  H01S5/026 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： G02B6/1228 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4203 ,  H01S5/026 ,  H01S5/227 ,  G02B2006/12121 ,  G02B2006/12128 ,  G02B2006/12195 ,  H01S5/10 ,  H01S5/1014 ,  H01S5/1028 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/3406 ,  H01S5/34306

摘要： A semiconductor optical device, for example a laser, has a composite optical waveguide including a tapered, MQW active waveguide in optical contact with a substantially planar, passive waveguide. The fundamental optical mode supported by the composite waveguide varies along the length of the composite waveguide so that, in a laser, the laser mode is enlarged and is a better match to single mode optical fiber. A method for making such semiconductor optical devices is also disclosed.

摘要翻译： 半导体光学器件，例如激光器，具有复合光波导，其包括与基本上平面的无源波导光学接触的锥形MQW有源波导。 由复合波导支持的基本光学模式沿着复合波导的长度变化，使得在激光器中，激光模式被扩大并且与单模光纤更好地匹配。 还公开了制造这种半导体光学器件的方法。

公开(公告)号：US5812576A

公开(公告)日：1998-09-22

申请号：US703293

申请日：1996-08-26

申请人： David P. Bour

发明人： David P. Bour

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01S5/2231 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2206 ,  H01S5/32341

摘要： The present invention relates to a short-wavelength loss-guided structure using Group III-V nitride material. Specifically, waveguiding in the lateral direction is achieved by placing a high index material in close proximity to the active layer of the laser, which gives rise to outcoupling of light from the lateral waveguides. The present invention provides higher laser beam quality and simplifies the processing technology.

摘要翻译： 本发明涉及使用III-V族氮化物材料的短波长损耗引导结构。 具体地，通过将​​高折射率材料放置在靠近激光器的有源层的方式实现横向的波导，这导致来自横向波导的光的外耦合。 本发明提供更高的激光束质量并简化了处理技术。

公开(公告)号：US5789772A

公开(公告)日：1998-08-04

申请号：US912800

申请日：1997-08-18

申请人： Ching-Long Jiang

发明人： Ching-Long Jiang

IPC分类号： H01L33/00 ,  H01L33/64 ,  H01S5/183 ,  H01S5/22 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L33/641 ,  H01L33/0025 ,  H01S5/18308 ,  H01S5/2206 ,  H01S5/2224

摘要： Light emitting devices are requiring greater switching speeds to achieve greater modulation bandwidths. The problems of intrinsic capacitance associated with conventional semiconductor heterojunction devices are reduced by the reduction of pn junction capacitance as well as the use of a semi-insulating blocking layer and a conductive substrate. Non-linearity of optical power output versus bias current is addressed by a heat dissipation scheme using the semi-insulative and conductive layers of the device.

摘要翻译： 发光器件需要更高的开关速度来实现更大的调制带宽。 通过减少pn结电容以及使用半绝缘阻挡层和导电衬底来减少与常规半导体异质结器件相关的本征电容的问题。 光功率输出与偏置电流的非线性度通过使用器件的半绝缘和导电层的散热方案来解决。

公开(公告)号：US5477063A

公开(公告)日：1995-12-19

申请号：US260982

申请日：1994-06-15

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01L33/00

CPC分类号： H01L33/28 ,  H01L33/145 ,  H01S5/327 ,  H01S5/2206 ,  H01S5/2231

摘要： In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer.

摘要翻译： 在II-V族半导体的半导体发光器件中，在夹着有源层的两个光包层中的一个中形成用于使电流仅通过中心条带区域的电流阻挡层，从而提高发光效率 并提供导光路径。 在通过外延生长在衬底上形成每个层的工艺中，通过蚀刻电流阻挡层形成中心条纹区域。

公开(公告)号：US5470785A

公开(公告)日：1995-11-28

申请号：US133507

申请日：1993-10-07

申请人： Yasuhiro Kondo

发明人： Yasuhiro Kondo

IPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323 ,  H01L21/20 ,  H01L21/203

CPC分类号： H01L33/305 ,  H01S5/227 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/32391

摘要： According to a method of manufacturing a buried heterostructure semiconductor laser, an active layer and a p-type cladding layer are sequentially deposited on an n-type group III-V semiconductor substrate by metalorganic vapor phase epitaxy. A surface of the deposited layer is masked in a stripe shape, and the cladding layer, the active layer, and the semiconductor substrate are selectively and partially etched to form a mesa structure. A p-type current blocking layer, an n-type current confining layer containing a group VI dopant having a concentration of not less than 5.times.10.sup.18 atoms.multidot.cm.sup.-3, a p-type cladding layer, and a p-type cap layer are sequentially deposited on an entire upper surface of the mesa structure by the metalorganic vapor phase epitaxy.

摘要翻译： 根据制造掩埋异质结构半导体激光器的方法，通过金属有机气相外延在n型III-V族半导体衬底上依次沉积有源层和p型覆层。 沉积层的表面被掩模成条形，并且包层，有源层和半导体衬底被选择性地和部分蚀刻以形成台面结构。 p型电流阻挡层，含有浓度不小于5×1018 atoms×cm-3的Ⅵ族掺杂剂的n型电流限制层，p型包覆层和p型覆盖层依次沉积在 通过金属有机气相外延的台面结构的整个上表面。

公开(公告)号：US5398255A

公开(公告)日：1995-03-14

申请号：US251215

申请日：1994-05-31

申请人： Tomoji Terakado

发明人： Tomoji Terakado

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/32391

摘要： A semiconductor laser having a mesa stripe structure with two sides thereof buried by layers comprises a p-InP buried layer, a p-InP current blocking layer, an InGaAsP current blocking layer, and an n-InP current blocking layer. The n-InP current blocking layer is electrically independent by being isolated by the p-InP current blocking layer and the p-InP buried layer which are in touch with each other at the two sides of the mesa stripe structure. With this arrangement, the leakage current is reduced enabling to improve temperature characteristics even at a temperature above 85 degrees.

摘要翻译： 具有其两侧掩埋的台面条状结构的半导体激光器包括p-InP掩埋层，p-InP电流阻挡层，InGaAsP电流阻挡层和n-InP电流阻挡层。 通过在台面条状结构的两侧彼此接触的p-InP电流阻挡层和p-InP掩埋层隔离，n-InP电流阻挡层是电独立的。 通过这种布置，即使在高于85度的温度下也能够降低泄漏电流，从而能够改善温度特性。

公开(公告)号：US5272109A

公开(公告)日：1993-12-21

申请号：US861115

申请日：1992-03-31

申请人： Takashi Motoda

发明人： Takashi Motoda

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01L21/20 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01S5/2231 ,  H01S5/2206 ,  H01S5/32325

摘要： A method for fabricating a visible light laser diode includes growing a double heterojunction structure of AlGaInP/GaInP/AlGaInP on a GaAs substrate, forming a stripe-shaped ridge in the double heterojunction structure using a dielectric film as an etching mask, selectively growing n type GaAs by MOCVD using the dielectric film as a growth mask to form a GaAs current blocking layer burying the ridge, removing the dielectric film and growing a GaAs contact layer on the current blocking layer and the ridge. The step of selectively growing the GaAs current blocking layer includes growing a first GaAs layer on the double heterojunction structure at both sides of the ridge and on the side walls of the ridge using triethylgallium (TEG) as a Ga source and growing a second GaAs layer on the first GaAs layer using trimethylgallium (TMG) as a Ga source. The side walls of the ridge are covered by the first GaAs layer and are not exposed to a high temperature in an AsH.sub.3 ambient, thereby reducing damage to the double heterojunction structure. In addition, since the second GaAs layer is grown using TMG as the Ga source, cavities are not produced in the GaAs layer.

摘要翻译： 制造可见光激光二极管的方法包括：在GaAs衬底上生长AlGaInP / GaInP / AlGaInP的双异质结结构，使用电介质膜作为蚀刻掩模，在双异质结结构中形成条状脊，选择性生长n型 通过使用电介质膜作为生长掩模的MOCVD来形成砷化镓，以形成埋入脊的GaAs电流阻挡层，去除电介质膜并在电流阻挡层和脊上生长GaAs接触层。 选择性地生长GaAs电流阻挡层的步骤包括使用三乙基镓（TEG）作为Ga源，在脊的两侧和脊的侧壁上的双异质结结构上生长第一GaAs层，并生长第二GaAs层 在使用三甲基镓（TMG）作为Ga源的第一GaAs层上。 脊的侧壁被第一GaAs层覆盖，并且不暴露于AsH3环境中的高温，从而减少对双异质结结构的损伤。 此外，由于使用TMG作为Ga源生长第二GaAs层，所以在GaAs层中不产生空穴。

公开(公告)号：US4692206A

公开(公告)日：1987-09-08

申请号：US830857

申请日：1986-02-19

申请人： Shinji Kaneiwa ,  Haruhisa Takiguchi ,  Toshihiko Yoshida ,  Sadayoshi Matsui

发明人： Shinji Kaneiwa ,  Haruhisa Takiguchi ,  Toshihiko Yoshida ,  Sadayoshi Matsui

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/227 ,  H01S3/18

CPC分类号： H01S5/227 ,  H01S5/2206 ,  H01S5/2275

摘要： A method for producing a semiconductor laser device having a buried heterostructure includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a p-substrate, said multi-layered crystal structure having a striped mesa-portion, a p-n-p multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each of both side faces of said active layer in said mesa-portion.

摘要翻译： 一种具有掩埋异质结构的半导体激光器件的制造方法包括在p型基板上含有激光振荡用活性层的多层结晶结构体，具有条状台面部的多层结晶结构体，pnp多 围绕所述台面部分的层状结构以及设置在所述条状台面部分的上表面上的掩埋层。 独特的结构在所述台面部分中的所述有源层的两个侧面的每一个处产生异质结。

公开(公告)号：US4188244A

公开(公告)日：1980-02-12

申请号：US947419

申请日：1978-10-02

申请人： Kunio Itoh ,  Morio Inoue

发明人： Kunio Itoh ,  Morio Inoue

IPC分类号： H01L21/203 ,  H01L21/205 ,  H01L33/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01L21/94

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L33/0025 ,  H01L33/0062 ,  H01S5/227 ,  H01S5/2206 ,  H01S5/2207 ,  H01S5/2211 ,  H01S5/2275 ,  H01S5/32308

摘要： In order to decrease threshold current of a semiconductor laser, and to obtain a single mode lasing suitable for use in light-communication, the semiconductor laser is formed in stripe type in which the light-emitting (i.e., active) layer and neighboring layers are formed in mesa-etched stripe type and low impurity-concentration (i.e., high resistivity) layers of GaAs, GaAsP or GaAlAs are situated to contact the mesa-etched side faces of the stripe-shaped part on the semiconductor device by vapor phase growth, vacuum deposition, sputtering, or molecular beam deposition. Since the wafer temperature can be kept fairly low (e.g. 400.degree.-700.degree. C.) in comparison with that (about 950.degree. C.) in a liquid phase growth, the stress introduced during the deposition is smaller than that in a liquid phase growth.

摘要翻译： 为了降低半导体激光器的阈值电流，并且为了获得适合于光通信的单模激光器，半导体激光器以条形形式形成，其中发光（即有源）层和相邻层是 以GaAs，GaAsP或GaAlAs的台面蚀刻条纹型和低杂质浓度（即高电阻率）层形成，通过气相生长接触半导体器件上的条形部分的台面蚀刻侧面， 真空沉积，溅射或分子束沉积。 与液相生长相比，由于晶片温度可以保持相当低（例如400〜-700℃），所以在沉积过程中引入的应力小于液相中的应力 成长。

公开(公告)号：US12027822B2

公开(公告)日：2024-07-02

申请号：US17304526

申请日：2021-06-22

申请人： Lumentum Japan, Inc.

发明人： Atsushi Nakamura ,  Hayato Takita ,  Shigetaka Hamada ,  Ryosuke Nakajima ,  Masatoshi Arasawa ,  Ryu Washino

IPC分类号： H01S5/22 ,  H01S5/026 ,  H01S5/12 ,  H01S5/227 ,  H01S5/34

CPC分类号： H01S5/2218 ,  H01S5/0265 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/34

摘要： To provide an optical semiconductor device having excellent long-term reliability, the optical semiconductor device includes: a substrate; a mesa structure provided on the substrate; a semiconductor burial layer provided in contact with two sides of the mesa structure; and an electrode containing Au, which is provided above the semiconductor burial layer. The mesa structure includes a first conductivity type semiconductor layer, a multiple-quantum well layer, and a second conductivity type semiconductor layer, which are stacked in the stated order from a substrate side. The semiconductor burial layer includes a first semi-insulating InP layer provided in contact with side portions of the mesa structure, a first anti-diffusion layer provided in contact with the first semi-insulating InP layer, and a second semi-insulating InP layer provided on the first anti-diffusion layer. The first anti-diffusion layer has an Au diffusion constant that is smaller than that of the first semi-insulating InP layer.