公开(公告)号：US09982002B2

公开(公告)日：2018-05-29

申请号：US15029945

申请日：2014-09-08

Applicant: INDIAN INSTITUTE OF TECHNOLOGY MADRAS

Inventor： Dillip Kumar Chand ,  Rajan Deepan Chakravarthy

IPC: C07F11/00 ,  C07D319/06 ,  B01J31/02 ,  B01J31/22 ,  B01J37/03 ,  B01J37/12 ,  C07C211/63 ,  C07C315/02

CPC classification number: C07F11/005 ,  B01J31/0239 ,  B01J31/2213 ,  B01J31/2239 ,  B01J31/2295 ,  B01J37/031 ,  B01J37/12 ,  B01J2231/70 ,  B01J2231/72 ,  B01J2531/56 ,  B01J2531/62 ,  B01J2531/64 ,  B01J2531/66 ,  B01J2531/96 ,  C07C211/63 ,  C07C315/02 ,  C07D319/06

Abstract: Methods and compositions of catalysts for sulfoxidation reaction processes are disclosed. The sulfoxidation reaction process can be performed in an aqueous medium, and the catalysts can be recycled for further use. In some embodiments, a method of making a catalyst may include contacting a transition metal compound with an oxidizing agent to form a first solution, contacting a carboxylic acid compound with a cationic surfactant to form a second solution, mixing the first solution and the second solution to form a precipitate, and isolating the precipitate.

公开(公告)号：US20180127447A1

公开(公告)日：2018-05-10

申请号：US15816816

申请日：2017-11-17

Applicant: Trustees of Boston College ,  Massachusetts Institute of Technology

Inventor： Amir H. Hoveyda ,  Hanmo Zhang ,  Ming Joo Koh ,  Richard Royce Schrock

IPC: C07F11/00 ,  C07C17/361 ,  C07C17/266 ,  C07D333/54 ,  C07D209/10 ,  C07D209/48 ,  C07F5/02 ,  C07F7/18 ,  C07J9/00 ,  C07J51/00 ,  C07C17/10 ,  C07C41/30 ,  C07C67/333 ,  C07C67/307 ,  B01J31/22 ,  C07B37/04 ,  C07C17/14 ,  C07C17/278 ,  C07C17/275 ,  C07C17/269 ,  C07C17/02 ,  C07C21/19 ,  C07C21/14 ,  C07C21/04 ,  C07C25/24 ,  C07C21/18 ,  C07C22/04 ,  C07C22/08 ,  C07C25/28 ,  C07C43/225 ,  C07C43/192 ,  C07C43/17 ,  C07C69/65 ,  C07C69/63 ,  C07C69/753

CPC classification number: C07F11/00 ,  B01J31/2265 ,  B01J2231/543 ,  B01J2531/64 ,  B01J2531/66 ,  C07B37/04 ,  C07C17/02 ,  C07C17/10 ,  C07C17/14 ,  C07C17/266 ,  C07C17/269 ,  C07C17/275 ,  C07C17/278 ,  C07C17/361 ,  C07C21/14 ,  C07C21/18 ,  C07C22/08 ,  C07C37/62 ,  C07C41/30 ,  C07C45/63 ,  C07C67/307 ,  C07C67/333 ,  C07C69/753 ,  C07C2601/14 ,  C07C2603/26 ,  C07D209/10 ,  C07D209/48 ,  C07D333/54 ,  C07F5/025 ,  C07F7/1804 ,  C07J9/00 ,  C07J51/00 ,  C07C21/19 ,  C07C21/04 ,  C07C25/24 ,  C07C22/04 ,  C07C22/00 ,  C07C22/02 ,  C07C25/28 ,  C07C43/225 ,  C07C43/192 ,  C07C43/17 ,  C07C69/65 ,  C07C69/63

Abstract: The present application provides, among other things, compounds and methods for metathesis reactions. In some embodiments, the present disclosure provides methods for preparing alkenyl halide with regioselectivity and/or stereoselectivity. In some embodiments, the present disclosure provides methods for preparing alkenyl halide with regioselectivity and Z-selectivity. In some embodiments, the present disclosure provides methods for preparing alkenyl halide with regioselectivity and E-selectivity. In some embodiments, provided technologies are particularly useful for preparing alkenyl fluorides. In some embodiments, a provided compound useful for metathesis reactions has the structure of formula II-a. In some embodiments, a provided compound useful for metathesis reactions has the structure of formula II-b.

公开(公告)号：US20180102284A1

公开(公告)日：2018-04-12

申请号：US15498945

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun Yun ,  Jae-Soon Lim ,  Youn-Joung Cho ,  Myong-Woon Kim ,  Kang-Yong Lee ,  Sang-Ick Lee ,  Sung-Woo Cho

IPC: H01L21/768 ,  H01L21/285 ,  C07F11/00

CPC classification number: H01L21/76841 ,  C07F11/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L27/1085 ,  H01L27/11582 ,  H01L28/60

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US20180099988A1

公开(公告)日：2018-04-12

申请号：US15837371

申请日：2017-12-11

Applicant: BASF SE

Inventor： Urs Lehmann ,  Daniel Heizler

IPC: C07F15/04 ,  C07F11/00 ,  C07F15/00 ,  G02B5/20 ,  B29C65/16 ,  B29C65/00 ,  C07D239/22 ,  G02B5/22 ,  B29B13/02 ,  C07D233/84 ,  C07D233/86 ,  C07D233/88 ,  B29K55/02 ,  B29K33/00 ,  B29K27/00 ,  B29K25/00 ,  B29K23/00 ,  B29C35/08 ,  B29C35/02 ,  B29K67/00 ,  B29K77/00 ,  B29K81/00 ,  B29K105/00 ,  B41M3/14 ,  B29K69/00

CPC classification number: C07F15/045 ,  B29B13/024 ,  B29C35/0272 ,  B29C65/00 ,  B29C65/1616 ,  B29C65/1674 ,  B29C65/1677 ,  B29C66/71 ,  B29C66/7332 ,  B29C66/73366 ,  B29C66/73921 ,  B29C2035/0822 ,  B29K2023/12 ,  B29K2025/08 ,  B29K2027/16 ,  B29K2033/08 ,  B29K2033/12 ,  B29K2055/02 ,  B29K2067/00 ,  B29K2067/003 ,  B29K2067/006 ,  B29K2069/00 ,  B29K2077/00 ,  B29K2081/04 ,  B29K2081/06 ,  B29K2105/0085 ,  B29K2105/0088 ,  B29K2995/0017 ,  B29K2995/002 ,  B29K2995/0026 ,  B29K2995/0027 ,  B41M3/14 ,  C07D233/84 ,  C07D233/86 ,  C07D233/88 ,  C07D239/22 ,  C07F11/00 ,  C07F15/0066 ,  C07F15/0093 ,  G02B5/208 ,  G02B5/22 ,  G02B5/223

Abstract: The invention relates to the use of compounds of formulae (I) and/or (II) as colorless 1R absorbers wherein M is Ni, Pd, Pt, Au, Ir, Fe, Zn, W, Cu, Mo, In, Mn, Co, Mg, V, Cr or Ti, X1, X2 and X3 are each independently of the others sulfur or oxygen, R1, R2, R3, R4, R5 and R6 are each independently of the others hydrogen, NR7R8, unsubstituted or substituted C1-C18alkyl, C1-C18 alkyl wherein the alkylene chain is interrupted with oxygen, unsubstituted or substituted C1-C18alkenyl, unsubstituted or substituted aryl, unsubstituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, R7 and R8, each independently of the other, being unsubstituted or substituted C1-C18alkyl, unsubstituted or substituted aryl, un substituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, a further IR absorber optionally being added to the compounds of formulae (I) and (II). The invention relates also to novel dithiolene compounds of formulae (I) and (II) wherein X1 is oxygen and X2 and X3 are oxygen or sulfur. The invention relates furthermore to novel dithiolene compounds of formulae (I) and (II) wherein R1 to R6 arc NR7R8.

公开(公告)号：US09920087B2

公开(公告)日：2018-03-20

申请号：US15623699

申请日：2017-06-15

Applicant: BASF SE

Inventor： Urs Lehmann ,  Daniel Heizler

IPC: B41M3/14 ,  G02B5/20 ,  G02B5/22 ,  C07F15/04 ,  C07D233/86 ,  B29B13/02 ,  B29C65/00 ,  C07D233/84 ,  C07D233/88 ,  C07D239/22 ,  B29C65/16 ,  C07F11/00 ,  C07F15/00 ,  B29C35/02 ,  B29C35/08 ,  B29K23/00 ,  B29K55/02 ,  B29K67/00 ,  B29K69/00 ,  B29K77/00 ,  B29K81/00 ,  B29K105/00 ,  B29K25/00 ,  B29K27/00

CPC classification number: C07F15/045 ,  B29B13/024 ,  B29C35/0272 ,  B29C65/00 ,  B29C65/1616 ,  B29C65/1674 ,  B29C65/1677 ,  B29C66/71 ,  B29C66/7332 ,  B29C66/73366 ,  B29C66/73921 ,  B29C2035/0822 ,  B29K2023/12 ,  B29K2025/08 ,  B29K2027/16 ,  B29K2033/08 ,  B29K2033/12 ,  B29K2055/02 ,  B29K2067/00 ,  B29K2067/003 ,  B29K2067/006 ,  B29K2069/00 ,  B29K2077/00 ,  B29K2081/04 ,  B29K2081/06 ,  B29K2105/0085 ,  B29K2105/0088 ,  B29K2995/0017 ,  B29K2995/002 ,  B29K2995/0026 ,  B29K2995/0027 ,  B41M3/14 ,  C07D233/84 ,  C07D233/86 ,  C07D233/88 ,  C07D239/22 ,  C07F11/00 ,  C07F15/0066 ,  C07F15/0093 ,  G02B5/208 ,  G02B5/22 ,  G02B5/223

Abstract: The invention relates to the use of compounds of formulae (I) and/or (II) as colorless IR absorbers wherein M is Ni, Pd, Pt, Au, Ir, Fe, Zn, W, Cu, Mo, In, Mn, Co, Mg, V, Cr or Ti, X1, X2 and X3 are each independently of the others sulfur or oxygen, R1, R2, R3, R4, R5 and R6 are each independently of the others hydrogen, NR7R8, unsubstituted or substituted C1-C18alkyl, C1-C18 alkyl wherein the alkylene chain is interrupted with oxygen, unsubstituted or substituted C1-C18alkenyl, unsubstituted or substituted aryl, unsubstituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, R7 and R8, each independently of the other, being unsubstituted or substituted C1-C18alkyl, unsubstituted or substituted aryl, unsubstituted or substituted arylalkyl or unsubstituted or substituted heteroarylalkyl, a further IR absorber optionally being added to the compounds of formulae (I) and (II). The invention relates also to novel dithiolene compounds of formulae (I) and (II) wherein X1 is oxygen and X2 and X3 are oxygen or sulfur. The invention relates furthermore to novel dithiolene compounds of formulae (I) and (II) wherein R1 to R6 are NR7R8.

公开(公告)号：US09919299B2

公开(公告)日：2018-03-20

申请号：US14774404

申请日：2014-03-13

Applicant: XiMo AG

Inventor： Levente Ondi ,  Jeno Varga ,  Agota Bucsai ,  Florian Toth ,  Krisztian Lorincz ,  Csaba Hegedus ,  Emmanuel Robe ,  Georg Emil Frater

IPC: B01J31/22 ,  C07C6/04 ,  B01J31/16 ,  B01J31/18 ,  C07F11/00 ,  B01J31/14 ,  C08G61/08 ,  C07C67/293 ,  C07C67/347

CPC classification number: B01J31/2265 ,  B01J31/143 ,  B01J31/1608 ,  B01J31/1805 ,  B01J31/181 ,  B01J31/2208 ,  B01J31/2226 ,  B01J31/223 ,  B01J2231/543 ,  B01J2531/0266 ,  B01J2531/0288 ,  B01J2531/64 ,  B01J2531/66 ,  B01J2540/20 ,  B01J2540/22 ,  B01J2540/225 ,  C07C6/04 ,  C07C67/293 ,  C07C67/347 ,  C07C2531/12 ,  C07C2531/22 ,  C07C2601/10 ,  C07F11/00 ,  C08G61/08 ,  C08G2261/418 ,  C07C11/02

Abstract: The invention relates to a method of forming an olefin from a first olefin and a second olefin in a metathesis reaction, comprising step (i): (i) reacting the first olefin with the second olefin in the presence of a compound that catalyzes said metathesis reaction such that the molar ratio of said compound to the first or the second olefin is from 1:500 or less, and the conversion of the first or the second olefin to said olefin is at least 50%, characterized in that as compound that catalyzes said metathesis reaction a compound of formula (A) is used: wherein M is Mo or W; R1 is aryl, heteroaryl, alkyl, or heteroalkyl; optionally substituted; R2 and R3 can be the same or different and are hydrogen, alkyl, alkenyl, heteroalkyl, heteroalkenyl, aryl, or heteroaryl; optionally substituted; R5 is alkyl, alkoxy, heteroalkyl, aryl, heteroaryl, silylalkyl, silyloxy, optionally substituted; and R4 is a residue R6—X—, wherein X═O and R6 is aryl, optionally substituted; or X═S and R6 is aryl, optionally substituted; or X═O and R6 is (R7, R8, R9)Si; wherein R7, R8, R9 are alkyl or phenyl, optionally substituted; or X═O and R6 is (R10, R11, R12)C, wherein R10, R11, R12 are independently selected from phenyl, alkyl; optionally substituted; and to the catalysts used in the method.

公开(公告)号：US20180072764A1

公开(公告)日：2018-03-15

申请号：US15711690

申请日：2017-09-21

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F11/00 ,  H01L45/00 ,  C23C16/30

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

公开(公告)号：US09890184B2

公开(公告)日：2018-02-13

申请号：US14443888

申请日：2013-11-20

Applicant: RIKEN

Inventor： Zhaomin Hou ,  Takanori Shima ,  Shaowei Hu ,  Yoshinori Endo

IPC: C07F9/50 ,  C07F7/28 ,  C07F7/00 ,  C07F9/00 ,  C07F11/00 ,  C01C1/04 ,  B01J8/02 ,  C07F17/00 ,  B01J31/18 ,  B01J31/22 ,  B01J31/24

CPC classification number: C07F7/28 ,  B01J8/02 ,  B01J31/1805 ,  B01J31/2295 ,  B01J31/2404 ,  B01J2208/00805 ,  B01J2231/62 ,  B01J2531/0222 ,  B01J2531/46 ,  C01C1/0411 ,  C07F7/00 ,  C07F7/003 ,  C07F9/00 ,  C07F9/5022 ,  C07F9/5045 ,  C07F11/005 ,  C07F17/00 ,  Y02P20/52

Abstract: A novel complex capable of fixing dinitrogen and use thereof are provided. A complex represented by formula (1A) or (1B) or a cationic or anionic complex from the complex: wherein M1 to M4 (M1 to M3 in the case of formula (1A)) are each independently Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W, and L1 to L4 (L1 to L3 in the case of formula (1A)) are each independently a ligand selected from among a ligand (Cp) including a substituted or unsubstituted cyclopentadienyl derivative, a diphenylamine ligand, a diphenylphosphine ligand, and a carboimideamide ligand.

公开(公告)号：US09856281B2

公开(公告)日：2018-01-02

申请号：US14474972

申请日：2014-09-02

Applicant: The Trustees of Columbia University in the City of New York

Inventor： Colin Nuckolls ,  Michael Louis Steigerwald ,  Xavier Roy ,  Philip Kim ,  Chulho Lee ,  Seok Ju Kang

IPC: H01B1/06 ,  C07F15/00 ,  C07F15/06 ,  C01B19/00 ,  B82Y10/00 ,  C07F11/00 ,  C07F15/04 ,  H01B1/12 ,  H01L51/00

CPC classification number: C07F15/06 ,  B82Y10/00 ,  C01B19/007 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2002/82 ,  C01P2002/84 ,  C01P2004/02 ,  C01P2004/03 ,  C01P2006/32 ,  C01P2006/42 ,  C07F11/00 ,  C07F15/04 ,  H01B1/121 ,  H01L51/0046

Abstract: A solid-state material comprising a solid-state compound is provided. The solid-state compound has the formula: [Cluster1][Cluster2]n, where Cluster1 can be a metal chalcogenide molecular cluster, Cluster2 a carbon cluster, and n the number of Cluster2 clusters in the solid-state compound. A method of forming a solid-state material is also provided.

公开(公告)号：US09783563B2

公开(公告)日：2017-10-10

申请号：US14882083

申请日：2015-10-13

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F7/02 ,  C07F11/00 ,  C23C16/30 ,  C23C16/455 ,  H01L45/00 ,  H01L21/02

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.