公开(公告)号：US20050013334A1

公开(公告)日：2005-01-20

申请号：US10847904

申请日：2004-05-18

申请人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

IPC分类号： H01S5/18 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183

CPC分类号： G02B6/4296 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/2214 ,  H01S5/32308 ,  H01S2301/18 ,  H01S2301/203

摘要： A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

摘要翻译： 一种表面发光半导体激光元件，包括基板，包括设置在基板上的半导体多层的下反射器，设置在下反射器上的有源层，包括设置在有源层上的半导体多层的上反射器， 化合物半导体层，具有用于暴露上反射体并在上反射体上方延伸的第一开口，以及具有第二开口的金属膜，用于暴露设置在第一开口内部并在化合物半导体层上方延伸的上反射体，其中金属 膜和化合物半导体层构成复合折射率分布结构，其中复数折射率从第二开口的中心朝向外部改变。 还提供了以单峰横向模式发射激光的方法。

公开(公告)号：US5864574A

公开(公告)日：1999-01-26

申请号：US624282

申请日：1996-03-29

申请人： David F. Welch ,  David G. Mehuys ,  Donald R. Scifres

发明人： David F. Welch ,  David G. Mehuys ,  Donald R. Scifres

IPC分类号： H01S3/081 ,  H01S3/23 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/10 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/18 ,  H01S5/187 ,  H01S5/20 ,  H01S5/40 ,  H01S5/50 ,  H01S3/19 ,  H01S3/00

CPC分类号： H01S5/1014 ,  G02B6/305 ,  H01S5/026 ,  H01S5/065 ,  H01S5/10 ,  H01S5/141 ,  H01S5/20 ,  G02B6/12004 ,  H01S2301/166 ,  H01S3/0818 ,  H01S3/113 ,  H01S5/0286 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/06256 ,  H01S5/0655 ,  H01S5/1003 ,  H01S5/1064 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/14 ,  H01S5/146 ,  H01S5/18 ,  H01S5/187 ,  H01S5/2036 ,  H01S5/2063 ,  H01S5/4025 ,  H01S5/4062 ,  H01S5/4087 ,  H01S5/50

摘要： A semiconductor gain medium has an active gain region with a partially patterned radiation diverging region. The partially patterned radiation diverging region may be created with spatial resistive regions formed in a portion of the radiation diverging region having a narrower width than in other portions of the diverging region where the propagating radiation has a greater width. The gain region may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.

摘要翻译： 半导体增益介质具有具有部分图案化的辐射发散区域的有源增益区域。 可以产生部分图案化的辐射发散区域，其中空间电阻区域形成在辐射发散区域的具有比传播辐射具有更大宽度的发散区域的其它部分更窄的宽度的一部分中的空间电阻区域。 增益区可以是放大器，或者除了放大器之外，还可以包括谐振腔，或作为不稳定谐振器工作。

公开(公告)号：US5608233A

公开(公告)日：1997-03-04

申请号：US429828

申请日：1995-04-27

申请人： Kenji Sahara ,  Hironobu Narui ,  Masato Doi ,  Osamu Matsuda

发明人： Kenji Sahara ,  Hironobu Narui ,  Masato Doi ,  Osamu Matsuda

IPC分类号： G11B11/10 ,  G11B7/12 ,  G11B7/125 ,  G11B7/13 ,  G11B7/135 ,  G11B11/105 ,  H01L31/0232 ,  H01L31/153 ,  H01S5/026 ,  H01S5/18 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： G11B7/1365 ,  G11B11/10543 ,  G11B7/123 ,  G11B7/127 ,  G11B7/13 ,  G11B7/1353 ,  H01L31/0232 ,  H01L31/153 ,  H01S5/18 ,  H01S5/0071 ,  H01S5/0262 ,  H01S5/0264

摘要： An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element (101) in which a light-emitting portion (4) and a light-receiving portion (5) are closely disposed on a common substrate and in which reflected-back light obtained from a magneto-optical medium (34) after light emitted from the light-emitting portion (4) was reflected on the magneto-optical medium (34) is detected at a position near confocal position by the light-receiving portion (5). The light-receiving portion (5) on the optical element (1) has a light-receiving surface inclined relative to the optical axis of the reflected-back light formed thereon so that the light-receiving portion has a polarization selective transmittance function on its surface. Thus, the reflected-back light from the magneto-optical medium (34) can be received and detected by the light-receiving portion (5) on the optical element (101).

摘要翻译： 用于检测磁光信号的光学装置可以被简化并且在布置中小型化。 用于检测磁光信号的光学装置包括光学元件（101），其中发光部分（4）和光接收部分（5）紧密地布置在公共基底上，并且其中反射光 在由光接收部分（5）接近共焦点的位置处检测在从光发射部分（4）发射的光在磁光介质（34）上被反射之后从磁光介质（34） 。 光学元件（1）上的光接收部分（5）具有相对于形成在其上的反射光的光轴倾斜的受光面，使得光接收部分在其上具有偏振选择透射函数 表面。 因此，来自磁光介质（34）的反射光可以被光学元件（101）上的光接收部分（5）接收和检测。

公开(公告)号：US5602864A

公开(公告)日：1997-02-11

申请号：US393136

申请日：1995-02-21

申请人： David F. Welch ,  David G. Mehuys ,  Donald R. Scifres

发明人： David F. Welch ,  David G. Mehuys ,  Donald R. Scifres

IPC分类号： H01S3/081 ,  H01S3/23 ,  H01S5/026 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/10 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/18 ,  H01S5/187 ,  H01S5/20 ,  H01S5/40 ,  H01S5/50 ,  H01S3/19

CPC分类号： H01S5/1014 ,  G02B6/305 ,  H01S5/026 ,  H01S5/065 ,  H01S5/10 ,  H01S5/141 ,  H01S5/20 ,  G02B6/12004 ,  H01S2301/166 ,  H01S3/0818 ,  H01S3/113 ,  H01S5/0286 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/06256 ,  H01S5/0655 ,  H01S5/1003 ,  H01S5/1064 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/14 ,  H01S5/146 ,  H01S5/18 ,  H01S5/187 ,  H01S5/2036 ,  H01S5/2063 ,  H01S5/4025 ,  H01S5/4062 ,  H01S5/4087 ,  H01S5/50

摘要： A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.

公开(公告)号：US5561683A

公开(公告)日：1996-10-01

申请号：US379223

申请日：1995-01-27

申请人： O'Dae Kwon

发明人： O'Dae Kwon

IPC分类号： H01S5/06 ,  H01S5/042 ,  H01S5/062 ,  H01S5/10 ,  H01S5/18 ,  H01S5/183 ,  H01S5/187 ,  H01S5/40 ,  H01S5/42 ,  H01S3/18 ,  G02B5/18 ,  H01L33/00 ,  H01S3/08

CPC分类号： H01S5/18386 ,  H01S5/0425 ,  H01S5/06243 ,  H01S5/105 ,  H01S5/4075 ,  H01S5/423

摘要： A surface emitting laser diode comprises a circular grating defined on the top surface of the diode for emitting a laser therethrough, an active layer for generating the laser in the region thereof under the circular grating, a reflection layer for preventing the laser from emitting through the bottom surface of the diode and a first contact, which includes a plurality of electrodes, for providing the active layer with carriers of a first conduction type and a second contact for providing the active layer with carriers of a second conduction type.

摘要翻译： 表面发射激光二极管包括限定在二极管的顶表面上用于发射激光的圆形光栅，用于在圆形光栅下的区域中产生激光的有源层，用于防止激光通过 二极管的底表面和包括多个电极的第一触点，用于向有源层提供第一导电类型和第二触点的载流子，用于向有源层提供具有第二导电类型的载流子。

公开(公告)号：US5479426A

公开(公告)日：1995-12-26

申请号：US206052

申请日：1994-03-04

申请人： Hideyuki Nakanishi ,  Akio Yoshikawa ,  Hirokazu Shimizu

发明人： Hideyuki Nakanishi ,  Akio Yoshikawa ,  Hirokazu Shimizu

IPC分类号： H01S5/02 ,  H01S5/022 ,  H01S5/026 ,  H01S5/18 ,  H01S3/18

CPC分类号： H01S5/02296 ,  H01S5/0071 ,  H01S5/02248 ,  H01S5/0683 ,  H01S5/3202

摘要： Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.

摘要翻译： 来自半导体激光元件的散射光沿着与光检测器基板的表面垂直的方向辐射。 半导体激光元件和光电检测器设置在同一平面上。 具体地说，在具有<110>方向的棱线的（111）晶格面倾斜表面形成的反射镜表面设置在离开角度为4°至14°的（100）晶格面的硅衬底上 （511）晶格面的硅基板上，沿着<110>方向的轴线偏离为1°至11°。 半导体激光芯片设置在与反射镜表面相对的位置。

公开(公告)号：US5365537A

公开(公告)日：1994-11-15

申请号：US1462

申请日：1993-01-07

申请人： Kiyotaka Sato ,  Kenji Togura

发明人： Kiyotaka Sato ,  Kenji Togura

IPC分类号： H01S5/02 ,  H01S5/022 ,  H01S5/028 ,  H01S5/18 ,  H01S5/20 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/18 ,  H01S5/028 ,  H01S5/0202 ,  H01S5/2059 ,  H01S5/2272

摘要： A semiconductor substrate is coated with an insulation mask. A window is cut in the mask using photolithography leaving stress risers at locations defining the length of a laser cavity. A plurality of layers of semiconductor film are selectively grown over the exposed substrate to form a pin diode and necessary impurities are injected. An intrinsic layer of the film forms a laser excitation layer and emits laser beams in response to excitation. Following heat treatment, the device is cooled rapidly, causing stress in the areas where the stress risers from the mask join the semiconductor film. By the time the device reaches room temperature, the semiconductor film is split and separated by cleavage planes. Alignment of the semiconductor laser device output beams is produced by anisotropic etching of the cleavage planes to form 45.degree. mirror planes. Conventional photolithographic techniques permit formation of the laser resonator with an accuracy on the order of submicrons.

摘要翻译： 半导体衬底被涂覆有绝缘掩模。 使用光刻在掩模中切割窗口，在限定激光腔的长度的位置处留下应力梯度。 在暴露的衬底上选择性地生长多个半导体膜层，以形成pin二极管并注入必要的杂质。 膜的本征层形成激光激发层并且响应于激发发射激光束。 经热处理后，器件迅速冷却，使来自面罩的应力梯度的区域中的应力接合半导体膜。 当器件达到室温时，半导​​体膜被裂解面分离并分离。 半导体激光器件输出光束的对准通过各向异性蚀刻裂解面而形成45°镜面。 传统的光刻技术允许以亚微米级的精度形成激光谐振器。

公开(公告)号：US5309470A

公开(公告)日：1994-05-03

申请号：US988758

申请日：1992-12-10

申请人： Bernard Groussin

发明人： Bernard Groussin

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/18 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/42 ,  H01S5/18

摘要： The invention applies to a laser integrated circuit comprising at least one row of lasers (30) lying between two reflector strips (28). The lasers (18) are electrically connected in parallel. The light emission along the strip will be more uniform if the electrical current is distributed by two "combs" whose "teeth" are parallel to the laser ribbons (18) and interleaved with them. The terminal metallized area (44) for the first comb is deposited at the bottom of a recess (18) and the terminal metallized areas (45) for the second comb are on the surface of the row. Such a device finds particular application to the power supply for laser integrated circuits.

摘要翻译： 本发明适用于包括位于两个反射器条（28）之间的至少一行激光器（30）的激光集成电路。 激光器（18）并联电连接。 如果电流由“齿”与激光带（18）平行并与其交错的两个“梳子”分布，沿条带的光发射将更均匀。 用于第一梳子的端子金属化区域（44）沉积在凹部（18）的底部，并且用于第二梳子的端子金属化区域（45）位于该行的表面上。 这种装置对激光集成电路的电源具有特定的应用。

公开(公告)号：US5159603A

公开(公告)日：1992-10-27

申请号：US710424

申请日：1991-06-05

申请人： Jae H. Kim

发明人： Jae H. Kim

IPC分类号： H01S5/18 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/18 ,  H01S5/34313 ,  H01S5/0071

摘要： A surface emitting laser or SEL having a pair of vertical oscillator mirrors and a pair of integrated 45.degree. beam deflectors etched in a pair of parallel grooves in a broad-area multilayered wafer by tilted ion beam etching. Each SEL has high output power, low threshold current density, relatively high efficiency, and is compatible with large scale optoelectronic integrated circuit technology. One embodiment includes a lattice matched, unstrained AlGaAs/GaAs single quantum well (SQW) optical cavity in a graded index separate confinement heterostructure (GRINSCH). A second embodiment is a 945 nm lattice-mismatched or pseudomorphic In.sub.0.15 Ga.sub.0.85 As/AlGaAs SQW optical cavity SEL in a GRINSCH configuration in which the lattice mismatch is accommodated by elastic deformation of the lattice. Strain-induced reduction of valence band non-parabolicity and effective density states permits operation with a relatively low threshold current and improved spectral and dynamic properties. The GaAs substrate is transparORIGIN OF THE INVENTIONThe invention described herein was made in the performance of work under a NASA contract, and is subject to the provisions of Public Law 96-517 (35 USC 202) in which the Contractor has elected not to retain title.

摘要翻译： 表面发射激光器或SEL具有一对垂直振荡镜和通过倾斜离子束蚀刻在广域多层晶片中的一对平行凹槽中蚀刻的一对集成的45°光束偏转器。 每个SEL具有高输出功率，低阈值电流密度，效率相对较高，并且兼容大规模光电集成电路技术。 一个实施例包括分级指数分离限制异质结构（GRINSCH）中的晶格匹配的未应变AlGaAs / GaAs单量子阱（SQW）光学腔。 第二实施例是GRINSCH配置中的945nm晶格失配或伪晶体In 0.15 Ga 0.85 As / AlGaAs SQW光学腔SEL，其中通过晶格的弹性变形来容纳晶格失配。 应变诱导的价带非抛物线和有效密度状态的降低允许以相对低的阈值电流和改进的光谱和动态特性进行操作。 GaAs衬底对发射的辐射是透明的，从而提供电路设计的增加的灵活性，因为辐射可以通过沟槽和/或向下通过衬底耦合。 在两个方向上发射辐射允许在该实施例的上方和下方制造三维光电子电路，并增强与包括光纤棒的其它光学装置的耦合。

公开(公告)号：US5055422A

公开(公告)日：1991-10-08

申请号：US543787

申请日：1990-07-24

申请人： Claude Weisbuch ,  Baudouin De Cremoux ,  Jean P. Pocholle

发明人： Claude Weisbuch ,  Baudouin De Cremoux ,  Jean P. Pocholle

IPC分类号： H01S5/00 ,  H01L33/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/18

CPC分类号： H01S5/18 ,  H01L33/0062 ,  H01S5/10 ,  Y10S148/095

摘要： The present invention relates to processes for the construction of semiconductor lasers.The process according to the invention is essentially characterized in that it consists in forming a layer 1 of a laser semiconductor active medium, in forming an optical cavity 2 associated with this layer, in disposing, on at least a part of the surface of the layer, first 6 and second 7 layers of materials of impurities of opposite polarities, in causing diffusion into the active medium of at least a part of the two materials of impurities to form, in the first layer, a cylinder 8 axis substantially parallel to the axis of the optical cavity and formed of two semi-cylindrical half-shells 9, 10 of diffused impurities of opposite polarities, and in connecting two conductors 12 of the electrical energy respectively to the two half-shells.Application to the construction of a plurality of laser diodes on one and the same support substrate, to create a homogeneous and dense single laser beam.

摘要翻译： PCT No.PCT / FR89 / 00062 Sec。 371日期1990年7月24日 102（e）日1990年7月24日PCT 1989年12月5日PCT公布。 出版物WO90 / 06608 日期：1990年6月14日。本发明涉及半导体激光器的构造方法。 根据本发明的方法的基本特征在于它包括在形成与该层相关联的光腔2中形成激光半导体活性介质的层1，在层的至少一部分表面上 ，第6层和第7层具有相反极性的杂质的材料，使第二层中的至少一部分杂质扩散到活性介质中，以在第一层中形成基本上平行于轴线的圆柱体8轴 并由两个具有相反极性的扩散杂质的半圆柱半壳9,10形成，并将两个电能的两个导体12分别连接到两个半壳上。 应用于在同一个支撑基板上构造多个激光二极管，以产生均匀且致密的单个激光束。