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    SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME
    64.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME 有权

    公开(公告)号：US20140312300A1

    公开(公告)日：2014-10-23

    申请号：US14246275

    申请日：2014-04-07

    Applicant: QD VISION, INC.

    Inventor： DORAI RAMPRASAD ,  CRAIG BREEN ,  JONATHAN S. STECKEL

    IPC: H01L33/28 ,  H01L33/06

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/225 ,  H01L33/0029 ,  H01L33/28 ,  Y10S977/774 ,  Y10S977/95 ,  Y10T428/2991 ,  Y10T428/2993

    Abstract: A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

    SEMICONDUCTOR NANOCRYSTALS AND METHODS
    65.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND METHODS 有权
    半导体纳米晶体和方法

    公开(公告)号：US20140227862A1

    公开(公告)日：2014-08-14

    申请号：US14182076

    申请日：2014-02-17

    Applicant: QD VISION, INC.

    Inventor： Inja Song ,  Craig Breen

    IPC: H01L21/02

    CPC classification number: H01L21/02601 ,  B01J13/22 ,  B82Y30/00 ,  H01L21/02518 ,  H01L21/02628

    Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.

    Abstract translation: 在一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和芳族溶剂的第一混合物，引入一种或多种阳离子前体和一种或多种阴离子前体 进入第一混合物以形成用于形成半导体材料的反应混合物，使反应混合物中的前体在不加入酸化合物的条件下，在足以在至少一部分外部生长包含半导体材料的涂层的条件下反应 半导体纳米晶体的至少一部分的表面，并且其中在分离涂覆的半导体纳米晶体之前在反应混合物中原位形成酰胺化合物。 在另一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和溶剂的第一混合物，引入酰胺化合物，一种或多种阳离子前体和一种或多种 阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物，并且在酰胺化合物存在下使反应混合物中的前体在足以在至少一部分 半导体纳米晶体的至少一部分的外表面。 还公开了包括根据上述方法生长的涂层的半导体纳米晶体。

    DEVICES AND METHODS
    66.
    发明申请
    DEVICES AND METHODS 审中-公开
    设备和方法

    公开(公告)号：US20140061584A1

    公开(公告)日：2014-03-06

    申请号：US13683365

    申请日：2012-11-21

    Applicant: QD Vision, Inc.

    Inventor： Gagan Mahan ,  Peter T. Kazlas

    IPC: H01L33/64 ,  H01L31/024

    CPC classification number: H01L31/024 ,  H01L23/4334 ,  H01L31/052 ,  H01L33/641 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  Y02E10/50 ,  H01L2924/00

    Abstract: A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles.

    Abstract translation: 公开了一种装置，其包括装置材料的布置以及包括在其至少一部分上设置的具有散热特性的材料的层。 该装置还可以包括布置在装置材料装置的顶表面和包含具有散热特性的材料的层之间的交错层。 阻挡层可以进一步包括在器件材料的布置和包含具有散热特性的材料的层之间。 还公开了方法。 在某些实施例中，器件包括量子限制的半导体纳米颗粒。

    DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD
    67.
    发明申请
    DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD 审中-公开
    包括半导体纳米晶体和方法的器件

    公开(公告)号：US20140054540A1

    公开(公告)日：2014-02-27

    申请号：US13900272

    申请日：2013-05-22

    Applicant: QD Vision, Inc.

    Inventor： Zhaoqun Zhou ,  Peter T. Kazlas ,  Marshall Cox

    IPC: H01L29/06 ,  H01L33/06 ,  H01L33/00 ,  H01L31/0352 ,  H01L21/02 ,  H01L31/18

    CPC classification number: H01L29/0665 ,  H01L21/02601 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/426 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    Abstract: A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrystals. A device comprises a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized prior to disposing semiconductor nanocrystals thereover.

    Abstract translation: 制造包含半导体纳米晶体的器件的方法包括形成能够在第一电极上传输电荷的第一层，其中形成第一层包括在第一电极上设置金属层，并至少将金属层的表面氧化成与第一电极相对的第一层 电极以形成金属氧化物，在氧化的金属表面上设置包含半导体纳米晶体的层，以及在包含半导体纳米晶体的层上设置第二电极。 一种器件包括设置在第一电极和第二电极之间的包含半导体纳米晶体的层，以及能够传输设置在包括半导体纳米晶体的层之间的电荷的第一层，其中电极的一个电极包括金属层 其中至少在面向包含半导体纳米晶体的层的金属层的表面在其上设置半导体纳米晶体之前被氧化。

    DEVICE INCLUDING QUANTUM DOTS AND METHOD FOR MAKING SAME
    69.
    发明申请
    DEVICE INCLUDING QUANTUM DOTS AND METHOD FOR MAKING SAME 有权

    公开(公告)号：US20170141336A1

    公开(公告)日：2017-05-18

    申请号：US15356566

    申请日：2016-11-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： ZHAOQUN ZHOU ,  PETER T. KAZLAS ,  BENJAMIN S. MASHFORD

    IPC: H01L51/50 ,  C09K11/88

    CPC classification number: H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/06 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/4233 ,  H01L51/5056 ,  H01L51/5088 ,  H01L2251/5369 ,  H05B33/14 ,  Y02E10/549 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

    Abstract: One embodiment relates to a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes, wherein at least a portion of the quantum dots comprise a core comprising a first semiconductor material and an outer shell surrounding the core, the shell comprising a second semiconductor material, wherein the first semiconductor material confines holes better than electrons in the core and the second semiconductor material is permeable to electrons; and a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of a first inorganic semiconductor material, the first layer being disposed between the layer comprising quantum dots and the cathode, wherein the first layer and the cathode form an ohmic contact during operation of the device. In a second embodiments, a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes; a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of an n-doped inorganic semiconductor material, the first layer being in contact with the cathode and positioned between the emissive layer and the cathode, and a second layer comprising a material capable of transporting electrons comprising an inorganic semiconductor material, the second layer being disposed between the emissive layer and the first layer, wherein the second layer has a lower electron conductivity than the first layer. In a third embodiment, a device comprises a pair of electrodes comprising an anode and a cathode; an layer comprising quantum dots disposed between the electrodes; and a UV treated first layer comprising a material capable of transporting and injecting electrons in contact with the cathode and positioned between the emissive layer and the cathode, the material capable of transporting and injecting electrons comprising an inorganic semiconductor material. A method and other embodiments are also disclosed.

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