公开(公告)号：US20100177799A1

公开(公告)日：2010-07-15

申请号：US12728982

申请日：2010-03-22

Applicant: Yoshiaki WATANABE ,  Hironobu NARUI ,  Yuichi KUROMIZU ,  Yoshinori YAMAUCHI ,  Yoshiyuki TANAKA

Inventor： Yoshiaki WATANABE ,  Hironobu NARUI ,  Yuichi KUROMIZU ,  Yoshinori YAMAUCHI ,  Yoshiyuki TANAKA

IPC: H01S5/02

CPC classification number: G02B6/4296 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18388 ,  H01S5/18394 ,  H01S5/2214 ,  H01S5/32308 ,  H01S2301/18 ,  H01S2301/203

Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

Abstract translation: 一种表面发光半导体激光元件，包括基板，包括设置在基板上的半导体多层的下反射器，设置在下反射器上的有源层，包括设置在有源层上的半导体多层的上反射器， 化合物半导体层，具有用于暴露上反射体并在上反射体上方延伸的第一开口，以及具有第二开口的金属膜，用于暴露设置在第一开口内部并在化合物半导体层上方延伸的上反射体，其中金属 膜和化合物半导体层构成复合折射率分布结构，其中复数折射率从第二开口的中心朝向外部改变。 还提供了以单峰横向模式发射激光的方法。

公开(公告)号：US20100047947A1

公开(公告)日：2010-02-25

申请号：US12461409

申请日：2009-08-11

Applicant: Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

Inventor： Kiyotaka Yashima ,  Yoshinari Kiwaki ,  Kamada Michiru ,  Sachio Karino ,  Hironobu Narui ,  Nobukata Okano

IPC: H01L21/306

CPC classification number: H01S5/227 ,  H01L33/24 ,  H01S5/22 ,  H01S5/223 ,  H01S5/3202

Abstract: A convex part formation method of forming a convex part in parallel with a direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θU; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θD (where θD≠θU).

Abstract translation: 在具有{100}面作为其顶面的背衬上形成与背衬的<110>方向平行的凸部的凸部形成方法包括：（a） 110>方向在背面; （b）蚀刻背衬以便形成凸起部分上层，其在与{110}面相对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长，并且侧面 其表面具有倾斜度; U; （c）进一步蚀刻背衬，以便形成凸起部分的下层，其在与{110}面对应的切割平面上的截面形状是等腰梯形，其基部比其上侧长;以及 其侧表面具有倾斜度; D（其中＆amp; D;≠＆thetas; U）。

公开(公告)号：US07575946B2

公开(公告)日：2009-08-18

申请号：US11079405

申请日：2005-03-14

Applicant: Yasuo Sato ,  Tomonori Hino ,  Hironobu Narui

Inventor： Yasuo Sato ,  Tomonori Hino ,  Hironobu Narui

IPC: H01L21/00

CPC classification number: C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/1844 ,  H01L31/1852 ,  H01L33/0062 ,  Y02E10/544 ,  Y02P70/521

Abstract: In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a predetermined distribution of lattice mismatch ratios in the thickness direction so as to reduce strain; and a second epitaxial growth step of forming the compound semiconductor layer on the buffer layer. The first epitaxial growth step is carried out by metal organic chemical vapor deposition at a deposition temperature of 600° C. or less.

Abstract translation: 在制造包括基板的化合物半导体和相对于基板的晶格失配比为2％以上的化合物半导体层的方法中，该方法包括在基板上形成缓冲层的第一外延生长步骤，缓冲层 层在厚度方向上具有预定的晶格失配比分布，以便减小应变; 以及在缓冲层上形成化合物半导体层的第二外延生长步骤。 第一外延生长步骤通过金属有机化学气相沉积在600℃或更低的沉积温度下进行。

公开(公告)号：US07515623B2

公开(公告)日：2009-04-07

申请号：US11143806

申请日：2005-06-02

Applicant: Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

Inventor： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

IPC: H01S5/00

CPC classification number: H01S5/18388 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18394 ,  H01S2301/166

Abstract: A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.

Abstract translation: 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在作为顶层的p型AlwGa1-wAs层上形成Al氧化物层 p型DBR层，并且形成类似于凹透镜的折射率分布。

公开(公告)号：US20090072253A1

公开(公告)日：2009-03-19

申请号：US12208776

申请日：2008-09-11

Applicant: Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

Inventor： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/24 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/227 ,  H01S5/3203 ,  H01S2304/04

Abstract: Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

Abstract translation: 本发明公开了一种半导体发光器件，包括：（A）被配置为形成在具有{100}面作为主表面的基片的主表面上的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并且通过外延生长形成在衬底的主表面上，下层沿平行于 衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

公开(公告)号：US20050274962A1

公开(公告)日：2005-12-15

申请号：US11192727

申请日：2005-07-29

Applicant: Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

Inventor： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC: G02B6/42 ,  G01J1/32 ,  H01L29/16 ,  H01L29/267 ,  H01L31/12 ,  H01L31/173 ,  H01S5/183

CPC classification number: H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Abstract translation: 光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。 激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。 光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。 光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。 由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

公开(公告)号：US06960791B2

公开(公告)日：2005-11-01

申请号：US10764640

申请日：2004-01-26

Applicant: Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

Inventor： Hironobu Narui ,  Tomonori Hino ,  Nobukata Okano ,  Jugo Mitomo

IPC: G02B6/42 ,  G01J1/32 ,  H01L29/16 ,  H01L29/267 ,  H01L31/12 ,  H01L31/173 ,  H01S5/183

CPC classification number: H01L31/16 ,  B82Y20/00 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/173 ,  H01S5/02284 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/3432 ,  H01S2301/176

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

公开(公告)号：US20050238806A1

公开(公告)日：2005-10-27

申请号：US10516797

申请日：2003-06-05

Applicant: Katsunori Yanashima ,  Hironobu Narui ,  Akihiko Memezawa ,  Koji Sasaki

Inventor： Katsunori Yanashima ,  Hironobu Narui ,  Akihiko Memezawa ,  Koji Sasaki

IPC: H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  C23C16/00

CPC classification number: C23C14/243 ,  C23C14/12 ,  C23C14/228 ,  H01L51/001 ,  H01L51/56

Abstract: A method for forming, without heat evolution, an organic thin film with homogeneous quality on the surface of the substrate. The method consists of vaporizing a single film-forming component of organic material, thereby evolving a film-forming gas (g2), transporting and feeding the film-forming gas (g2) into a reaction chamber (11) in which a substrate (W) is placed, and depositing the organic material, while keeping the film-forming component, on the surface of the substrate (W) in the reaction chamber (11). The substrate (W) is kept cooled while the organic material is being deposited. The film-forming gas (g2) is transported and fed into the reaction chamber (11) by using a carrier gas, such as an inert gas (g1). The deposition of the organic material is repeated so that films differing in composition are formed one over another.

Abstract translation: 一种在基底表面形成具有均匀质量的有机薄膜而不发热的方法。 该方法包括蒸发有机材料的单一成膜组分，从而放出成膜气体（g 2），将成膜气体（g 2）输送并进料到反应室（11）中，其中基板 （W），并且在保持成膜组分的同时将有机材料沉积在反应室（11）中的基板（W）的表面上。 在沉积有机材料的同时保持基板（W）的冷却。 成膜气体（g 2）通过使用载气如惰性气体（g 1）输送并送入反应室（11）。 重复有机材料的沉积，使得组成不同的膜彼此形成。

公开(公告)号：US20050208737A1

公开(公告)日：2005-09-22

申请号：US10507666

申请日：2003-12-26

Applicant: Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiaki Watanabe ,  Sadao Tanaka

Inventor： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiaki Watanabe ,  Sadao Tanaka

IPC: H01L21/31 ,  H01L21/00 ,  H01L21/316 ,  H01L21/301

CPC classification number: H01L21/67017 ,  H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31662

Abstract: A steam oxidation apparatus is provided which is capable of ensuring a desirable controllability and reproducibility of the steam oxidation of an object-to-be-oxidized housed in the reactor, by suppressing condensation of the steam in the steam-accompanied inert gas supplied to the reactor. The steam oxidation apparatus 78 is an apparatus used for forming the current confinement structure into the surface-emitting laser element by subjecting the high-Al-content layer to steam oxidation, and is equipped with a reactor 42 for the steam oxidation, a steam-accompanied inert gas system for supplying a steam-accompanied inert gas to the reactor 42, an inert gas system for supplying an inert gas to the reactor 42, a reactor bypass pipe 52 for allowing the steam-accompanied inert gas system and inert gas system to bypass the reactor, and an exhaust system for discharging exhaust gas from the reactor 42. The steam oxidation apparatus 78 is further equipped with a thermostatic oven 72 which houses the H2O bubbler 60, second gas pipe 68, automatic open/close valves 66A to 66D, a portion of the third gas pipe 70 in the vicinity of the automatic open/close valves 66A to 66D, and a portion of the gas inlet port 42A side of the reactor 42.

Abstract translation: 提供一种蒸汽氧化装置，其能够通过抑制供给到反应器的蒸汽伴随的惰性气体中的蒸汽的冷凝来确保反应器中容纳的被氧化物体的蒸汽氧化的期望的可控性和再现性 反应堆。 蒸汽氧化装置78是用于通过使高Al含量层进行蒸汽氧化将电流限制结构形成到表面发射激光元件中的装置，并且配备有用于蒸汽氧化的反应器42， 用于向反应器42供应伴随蒸汽的惰性气体的惰性气体系统，用于向反应器42供应惰性气体的惰性气体系统，用于允许伴随蒸汽的惰性气体系统和惰性气体系统的反应器旁通管52 绕过反应器，以及用于从反应器42排出废气的排气系统。 蒸汽氧化装置78还配备有恒温炉72，其容纳H 2 O 2起泡器60，第二气体管68，自动打开/关闭阀66A至66D，第三部分 自动打开/关闭阀66A至66D附近的气体管70和反应器42的气体入口42A侧的一部分。

公开(公告)号：US20050002673A1

公开(公告)日：2005-01-06

申请号：US10809432

申请日：2004-03-26

Applicant: Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

Inventor： Nobukata Okano ,  Yoshiaki Watanabe ,  Jugo Mitomo ,  Tomonori Hino ,  Hironobu Narui

IPC: H04B10/11 ,  H04B10/112 ,  H04B10/00

CPC classification number: H04B10/1149 ,  H04B10/116

Abstract: An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

Abstract translation: 光信息传送照明装置2设置在通常使用的现有照明装置的场合。 照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。 可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。 因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。