公开(公告)号：US07932169B2

公开(公告)日：2011-04-26

申请号：US12587301

申请日：2009-10-05

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valérie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K Srivastava ,  Michael J. Sullivan

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20100310775A1

公开(公告)日：2010-12-09

申请号：US12713560

申请日：2010-02-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra Sadana ,  Davood Shahrjerdi

IPC分类号： B05D3/02

CPC分类号： H01L31/075 ,  H01L21/02002 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/076 ,  H01L31/184 ,  H01L31/1892 ,  Y02E10/548

摘要： A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.

摘要翻译： 从半导体衬底的锭剥落层的方法包括在半导体衬底的锭上形成金属层，其中金属层中的拉伸应力构造成在晶锭中引起断裂; 并在断裂处从锭中去除层。 用于从半导体衬底的锭剥落层的系统包括形成在半导体衬底的锭上的金属层，其中金属层中的拉伸应力被配置为引起锭中的断裂，并且其中该层被配置 在断裂处从锭中移除。

公开(公告)号：US20100147497A1

公开(公告)日：2010-06-17

申请号：US12710951

申请日：2010-02-23

申请人： BRUCE K. FURMAN ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

发明人： BRUCE K. FURMAN ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

IPC分类号： F28F13/18 ,  F28F7/00

CPC分类号： H01L23/433 ,  F28F13/00 ,  F28F2013/005 ,  H01L2224/73253 ,  Y10T29/4935 ,  Y10T29/53113

摘要： The present invention is a patterned metal thermal interface. In one embodiment a system for dissipating heat from a heat-generating device includes a heat sink having a first surface adapted for thermal coupling to a first surface of the heat generating device and a thermal interface having at least one patterned surface, the thermal interface being adapted to thermally couple the first surface of the heat sink to the first surface of the heat generating device. The patterned surface of the thermal interface allows the thermal interface to deform under compression between the heat sink and the heat generating device, leading to better conformity of the thermal interface to the surfaces of the heat sink and the heat generating device.

摘要翻译： 本发明是图案化的金属热界面。 在一个实施例中，用于从发热装置散热的系统包括具有适于热耦合到发热装置的第一表面的第一表面的散热器和具有至少一个图案化表面的热界面，所述热界面是 适于将散热器的第一表面热耦合到发热装置的第一表面。 热界面的图案化表面允许热界面在散热器和发热装置之间的压缩下变形，导致热界面与散热器和发热装置的表面更好地一致。

公开(公告)号：US20100142150A1

公开(公告)日：2010-06-10

申请号：US12706912

申请日：2010-02-17

申请人： Levi A. CAMPBELL ,  Richard C. CHU ,  Michael J. ELLSWORTH, JR. ,  Bruce K. FURMAN ,  Madhusudan K. IYENGAR ,  Paul A. LAURO ,  Roger R. SCHMIDT ,  Da-Yuan SHIH ,  Robert E. SIMONS

发明人： Levi A. CAMPBELL ,  Richard C. CHU ,  Michael J. ELLSWORTH, JR. ,  Bruce K. FURMAN ,  Madhusudan K. IYENGAR ,  Paul A. LAURO ,  Roger R. SCHMIDT ,  Da-Yuan SHIH ,  Robert E. SIMONS

IPC分类号： H05K7/20 ,  F28D15/00 ,  F28F7/00

CPC分类号： H01L23/4735 ,  H01L23/473 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A cooling apparatus and method of fabrication are provided for facilitating removal of heat from a heat-generating electronic device. The method of fabrication includes: obtaining a solder material; disposing the solder material on a surface to be cooled; and reflowing and shaping the solder material disposed on the surface to be cooled to configure the solder material as a base with a plurality of fins extending therefrom. In addition to being in situ-configured on the surface to be cooled, the base is simultaneously metallurgically bonded to the surface to be cooled. The solder material, configured as the base with a plurality of fins extending therefrom, is a single, monolithic structure thermally attached to the surface to be cooled via the metallurgical bonding thereof to the surface to be cooled.

摘要翻译： 提供冷却装置和制造方法以便于从发热电子装置中除去热量。 制造方法包括：获得焊料材料; 将焊料材料设置在要冷却的表面上; 回流和成形设置在待冷却表面上的焊料材料，以将焊料材料构成为具有从其延伸的多个翅片的基底。 除了在待冷却的表面上原位配置，基底同时冶金结合到待冷却的表面上。 构造为具有从其延伸的多个翅片的基底的焊料材料是通过其被冶金结合到要冷却的表面热连接到要冷却的表面的单个整体结构。

公开(公告)号：US20080206979A1

公开(公告)日：2008-08-28

申请号：US12113152

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L21/60

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20080202386A1

公开(公告)日：2008-08-28

申请号：US12039309

申请日：2008-02-28

申请人： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

发明人： Gareth Hougham ,  Paul A. Lauro ,  Brian R. Sundlof ,  Jeffrey D. Gelorme

IPC分类号： C09C1/44 ,  C09K5/10

CPC分类号： H01L23/3733 ,  B82Y30/00 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/40 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  Y10S977/788 ,  Y10T156/10 ,  Y10T428/24994 ,  H01L2224/0401

摘要： The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

摘要翻译： 本发明一般涉及用于集成电路的导热膏，特别是但不限于石墨的自取向微孔板。

公开(公告)号：US07410833B2

公开(公告)日：2008-08-12

申请号：US10815103

申请日：2004-03-31

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20080165502A1

公开(公告)日：2008-07-10

申请号：US11619928

申请日：2007-01-04

申请人： Bruce K. Furman ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

发明人： Bruce K. Furman ,  Sushumna Iruvanti ,  Paul A. Lauro ,  Yves C. Martin ,  Da Yuan Shih ,  Theodore G. Van Kessel ,  Wei Zou

IPC分类号： H05K7/20 ,  B23P15/26

CPC分类号： H01L23/433 ,  F28F13/00 ,  F28F2013/005 ,  H01L2224/73253 ,  Y10T29/4935 ,  Y10T29/53113

摘要： The present invention is a patterned metal thermal interface. In one embodiment a system for dissipating heat from a heat-generating device includes a heat sink having a first surface adapted for thermal coupling to a first surface of the heat generating device and a thermal interface having at least one patterned surface, the thermal interface being adapted to thermally couple the first surface of the heat sink to the first surface of the heat generating device. The patterned surface of the thermal interface allows the thermal interface to deform under compression between the heat sink and the heat generating device, leading to better conformity of the thermal interface to the surfaces of the heat sink and the heat generating device.

摘要翻译： 本发明是图案化的金属热界面。 在一个实施例中，用于从发热装置散热的系统包括具有适于热耦合到发热装置的第一表面的第一表面的散热器和具有至少一个图案化表面的热界面，所述热界面是 适于将散热器的第一表面热耦合到发热装置的第一表面。 热界面的图案化表面允许热界面在散热器和发热装置之间的压缩下变形，导致热界面与散热器和发热装置的表面更好地一致。

公开(公告)号：US07137827B2

公开(公告)日：2006-11-21

申请号：US10715288

申请日：2003-11-17

申请人： Gareth G Hougham ,  Keith E Fogel ,  Joanna Rosner ,  Paul A Lauro ,  Sherif Goma ,  Joseph Zinter, Jr.

发明人： Gareth G Hougham ,  Keith E Fogel ,  Joanna Rosner ,  Paul A Lauro ,  Sherif Goma ,  Joseph Zinter, Jr.

IPC分类号： H01R12/00

CPC分类号： H05K7/1069 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01R12/52 ,  H05K3/326 ,  H05K3/4092 ,  H05K3/42 ,  H05K2201/10378 ,  H05K2203/308 ,  Y10T29/49147 ,  Y10T29/49151 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49204 ,  Y10T29/49222 ,  H01L2924/00

摘要： An interposer having one or more hollow electrical contact buttons disposed in a carrier. The interposer is formed by disposing sacrificial posts in vias of the carrier. The electrical contact buttons are formed on the sacrificial posts by a metallizing process in desired pattern using a mask. The sacrificial posts are made of a material that thermally decomposes upon application of heat without altering the carrier or the electrical contact buttons.

摘要翻译： 具有设置在载体中的一个或多个中空电触点按钮的插入器。 中间层通过在载体的通孔中设置牺牲柱而形成。 通过使用掩模的期望图案的金属化处理在牺牲柱上形成电接触按钮。 牺牲柱由在施加热量时热分解而不改变载体或电触点按钮的材料制成。

公开(公告)号：US09082762B2

公开(公告)日：2015-07-14

申请号：US12647999

申请日：2009-12-28

申请人： Sung K. Kang ,  Paul A. Lauro ,  Minhua Lu ,  Da-Yuan Shih

发明人： Sung K. Kang ,  Paul A. Lauro ,  Minhua Lu ,  Da-Yuan Shih

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/16503 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0109 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/01026 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process. In another embodiment a process comprises manufacturing an electromigration-resistant UBM Sn-rich Pb-free solder bump flip chip structure wherein the electromigration-resistant UBM structure comprises a four-layer structure, or a three-layer structure, wherein the four layer structure is formed by providing 1) an adhesion layer, 2) a Cu seed layer for plating, 3) a reaction barrier layer, and 4) a wettable layer for joining to the solder, and the three-layer structure is formed by providing 1) an adhesion layer, 2) a reaction barrier layer, and 3) a wettable layer. In a further embodiment, the reaction barrier layer comprises metals selected from Ni, Fe, Pd, Pt, Co, Cu and their alloys, and combinations thereof. A structure comprises a product produced by the immediately foregoing process.

摘要翻译： 一种方法包括通过向Cu层施加包含NiFe的金属反应阻挡层来制造包含Cu层的电迁移性凸块下金属化（UBM）倒装芯片结构。 在倒装芯片结构中使用的焊料基本上包括无铅锡。 一种结构包括通过该方法生产的产品。 在另一个实施方案中，一种方法包括制造抗电镀UBM Sn的无铅焊料凸块倒装芯片结构，其中电迁移阻挡UBM结构包括四层结构或三层结构，其中四层结构是 通过提供1）粘合层形成，2）用于电镀的Cu籽晶层，3）反应阻挡层，以及4）用于与焊料接合的可湿性层，并且通过提供1）一种 粘合层，2）反应阻挡层，和3）可湿性层。 在另一个实施方案中，反应阻挡层包含选自Ni，Fe，Pd，Pt，Co，Cu及其合金的金属及其组合。 一种结构包括由上述方法生产的产品。