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    HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE
    62.
    发明申请
    HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE 审中-公开
    六角形WURTZITE单晶和六角形WURTZITE单晶基板

    公开(公告)号：US20100075107A1

    公开(公告)日：2010-03-25

    申请号：US12474134

    申请日：2009-05-28

    申请人： Makoto Saito ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Makoto Saito ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： C01B21/06 ,  B32B5/00 ,  C30B23/00

    CPC分类号： C30B29/403 ,  C30B7/10 ,  C30B25/20 ,  C30B29/406 ,  Y10T428/24355

    摘要： A technique for growing high quality bulk hexagonal single crystals using a solvo-thermal method, and a technique for achieving the high quality and high growth rate at the same time. The crystal quality strongly depends on the growth planes, wherein a nonpolar or semipolar seed surface such as {10-10}, {10-11}, {10-1-1}, {10-12}, {10-1-2}, {11-20}, {11-22}, {11-2-2} gives a higher crystal quality as compared to a c-plane seed surface such as (0001) and (000-1). Also, the growth rate strongly depends on the growth planes, wherein a semipolar seed surface such as {10-12}, {10-1-2}, {11-22}, {11-2-2} gives a higher growth rate. High crystal quality and high growth rate are achievable at the same time by choosing the suitable growth plane. The crystal quality also depends on the seed surface roughness, wherein high crystal quality is achievable when the nonpolar or semipolar seed surface RMS roughness is below 100 nm; on the other hand, the crystal grown from the Ga-face or N-face results in poor crystal quality, even though grown from an atomically smooth surface.

    摘要翻译： 使用溶剂热法生长高质量体积六边形单晶的技术，以及同时实现高质量和高生长速率的技术。 晶体质量主要取决于生长面，其中非极性或半极性种子表面如{10-10}，{10-11}，{10-1-1}，{10-12}，{10-1-1} 2}，{11-20}，{11-22}，{11-2-2}与c面种子表面（0001）和（000-1）相比，具有更高的晶体质量。 此外，生长速率强烈地取决于生长平面，其中诸如{10-12}，{10-1-2}，{11-22}，{11-2-2}的半极性种子表面产生更高的生长 率。 通过选择合适的生长平面，可以同时实现高结晶质量和高生长速度。 晶体质量还取决于种子表面粗糙度，其中当非极性或半极性种子表面RMS粗糙度低于100nm时可实现高结晶质量; 另一方面，从Ga面或N面生长的晶体即使从原子光滑的表面生长也会导致差的晶体质量。

    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS
    65.
    发明申请
    DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS 有权
    非极性III型氮化物薄膜中的分离减少

    公开(公告)号：US20080135853A1

    公开(公告)日：2008-06-12

    申请号：US11852908

    申请日：2007-09-10

    申请人： Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Michael D. Craven ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/15 ,  H01L21/20

    CPC分类号： H01L21/0237 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.

    摘要翻译： 非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。 首先，将薄的图案化电介质掩模施加到种子层。 其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。 在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。 通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。

    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N
    67.
    发明授权
    Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
    通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加

    公开(公告)号：US08772758B2

    公开(公告)日：2014-07-08

    申请号：US13470598

    申请日：2012-05-14

    申请人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    发明人： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L29/06

    CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513

    摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.

    摘要翻译： 一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷 更多未掺杂的缓冲层。 掺杂可以减少或防止错配位错线的形成和额外的穿线位错。 缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。 此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。