公开(公告)号：US10811305B2

公开(公告)日：2020-10-20

申请号：US15272758

申请日：2016-09-22

Applicant: International Business Machines Corporation

Inventor： Li-Wen Hung ,  John U. Knickerbocker ,  Leathen Shi ,  Cornelia Tsang Yang ,  Bucknell C. Webb

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/86 ,  H01L29/20 ,  H01L29/16 ,  H01L27/12 ,  H01L23/29 ,  H01L23/00 ,  H01L21/18 ,  H01L27/092 ,  H01L27/06 ,  H01L21/8258

Abstract: A multi-layer wafer and method of manufacturing such wafer are provided. The method comprises applying a stress compensating oxide layer to each of two heterogeneous wafers, applying at least one bonding oxide layer to at least one of the two heterogeneous wafers, chemical-mechanical polishing the at least one bonding oxide layer, and low temperature bonding the two heterogeneous wafers to form a multi-layer wafer pair. The multi-layer wafer comprises two heterogeneous wafers, each of the heterogeneous wafers having a stress compensating oxide layer and at least one bonding oxide layer applied to at least one of the two heterogeneous wafers. The two heterogeneous wafers are low temperature bonded together to form the multi-layer wafer.

公开(公告)号：US10670656B2

公开(公告)日：2020-06-02

申请号：US15452933

申请日：2017-03-08

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Qianwen Chen ,  Bing Dang ,  John U. Knickerbocker ,  Minhua Lu ,  Robert J. Polastre ,  Bucknell C. Webb

IPC: G01R31/309 ,  H05K3/30 ,  G01R31/28 ,  H05K1/02 ,  H05K1/18

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

公开(公告)号：US10431828B2

公开(公告)日：2019-10-01

申请号：US15168330

申请日：2016-05-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Paul S. Andry ,  Bucknell C. Webb

IPC: H01M6/40 ,  H01M4/62 ,  H01M2/26 ,  H01M2/08 ,  H01M4/02

Abstract: Batteries and methods of forming the same include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode. The cathode structure includes a cathode substrate, a cathode formed on the cathode substrate, and a cathode conductive liner that is in contact with the cathode. The conductive overcoat is formed over the anode structure and the cathode structure to seal a cavity formed by the anode structure and the cathode structure. At least one of the anode substrate and the cathode substrate is pierced by through vias that are in contact with the respective anode conductive liner or cathode conductive liner.

公开(公告)号：US10160634B2

公开(公告)日：2018-12-25

申请号：US15650953

申请日：2017-07-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bucknell C. Webb

IPC: B81B3/00 ,  B81C1/00 ,  B81B5/00 ,  B81C3/00

Abstract: Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

公开(公告)号：US20180098433A1

公开(公告)日：2018-04-05

申请号：US15821446

申请日：2017-11-22

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Qianwen Chen ,  Bing Dang ,  John U. Knickerbocker ,  Minhua Lu ,  Robert J. Polastre ,  Bucknell C. Webb

IPC: H05K1/18 ,  H05K1/02 ,  H05K3/00 ,  H05K3/34 ,  H05K1/11 ,  H05K3/30 ,  H05K1/03

CPC classification number: H05K1/189 ,  G01R31/2818 ,  G01R31/309 ,  G01R31/44 ,  H05K1/0268 ,  H05K1/0274 ,  H05K1/0393 ,  H05K1/111 ,  H05K3/0026 ,  H05K3/0052 ,  H05K3/305 ,  H05K3/341 ,  H05K3/3494 ,  H05K13/0069 ,  H05K2201/09072 ,  H05K2201/10015 ,  H05K2201/10037 ,  H05K2201/1006 ,  H05K2201/10098 ,  H05K2201/10106 ,  H05K2201/10121 ,  H05K2201/10522 ,  H05K2203/107 ,  H05K2203/162

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

公开(公告)号：US20170341931A1

公开(公告)日：2017-11-30

申请号：US15650953

申请日：2017-07-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bucknell C. Webb

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0056 ,  B81B2201/012 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2203/0109 ,  B81C2203/0136 ,  H01H59/0009 ,  H01H2001/0078

Abstract: Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

公开(公告)号：US20170341930A1

公开(公告)日：2017-11-30

申请号：US15650788

申请日：2017-07-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bucknell C. Webb

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0056 ,  B81B2201/012 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0178 ,  B81C2203/0109 ,  B81C2203/0136 ,  H01H59/0009 ,  H01H2001/0078

Abstract: Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

公开(公告)号：US20170256759A1

公开(公告)日：2017-09-07

申请号：US15061169

申请日：2016-03-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Paul S. Andry ,  Paul A. Lauro ,  Jae-Woong Nah ,  Adinath Narasgond ,  Robert J. Polastre ,  Bucknell C. Webb

IPC: H01M2/08 ,  H01M4/50 ,  H01M2/16 ,  H01M4/62 ,  H01M4/04 ,  H01M4/66

Abstract: A battery structure includes an anode packaging material having a first textured surface and an anode metal formed on the first textured surface. A separator is formed on the anode metal. A cathode packaging material includes a second textured surface. A cathode metal is formed on the second textured surface. An active cathode paste is formed on the cathode metal and brought into contact with the separator such that any gap is filled with electrolyte.

公开(公告)号：US20170194607A1

公开(公告)日：2017-07-06

申请号：US14983740

申请日：2015-12-30

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Joana S. Branquinho Teresa Maria ,  Jeffrey Gelorme ,  Jae-Woong Nah ,  Adinath S. Narasgond ,  Bucknell C. Webb

IPC: H01M2/08 ,  H01M2/02 ,  H01M6/40

CPC classification number: H01M2/08 ,  H01M2/021 ,  H01M6/40 ,  H01M10/0436

Abstract: A method of forming a flexible microbattery and battery is provided. The method including: forming a film with a cavity therein; applying a first outer flexible substrate to a first side of the film; applying a second outer flexible substrate to a second opposite side of the film, wherein a cathode, an anode, a separator and an electrolyte are located within the cavity and the film provides a first seal about the cathode, the anode, the separator and the electrolyte and wherein the first seal extends between the first outer flexible substrate and the second outer flexible substrate; cutting a trench through the first outer flexible substrate, the film and the second outer flexible substrate after the first seal is formed; disposing a curable material in the trench; curing the curable material to provide a second seal, wherein the first seal is located between the cavity and the second seal.

公开(公告)号：US20160260708A1

公开(公告)日：2016-09-08

申请号：US15156576

申请日：2016-05-17

Applicant: International Business Machines Corporation

Inventor： Philipp Herget ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang ,  Bucknell C. Webb

IPC: H01L27/06 ,  H01L49/02

CPC classification number: H01L27/22 ,  G11B5/3163 ,  H01F1/14708 ,  H01F7/021 ,  H01F10/14 ,  H01F27/24 ,  H01F27/2804 ,  H01F2027/2809 ,  H01L27/0641 ,  H01L27/224 ,  H01L28/10 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.