摘要:
The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element and a manufacturing method thereof without increasing a manufacturing cost. A supporting body is attached to a front surface of a semiconductor substrate formed with a light receiving element and its pad electrode. Then, the supporting body is etched to form a via hole penetrating the supporting body and exposing the pad electrode. Then, a wiring connected to the pad electrode and extending onto a front surface of the supporting body through the via hole is formed. Lastly, the semiconductor substrate is separated into a plurality of semiconductor dies by dicing. The semiconductor device is mounted so that the supporting body faces a circuit board.
摘要:
Lower surface terminals are disposed at the lower surface of a magnetic substrate. An upper surface electrode is disposed at the upper surface of the magnetic substrate. A control circuit, an input capacitor, and an output capacitor are mounted on the upper surface electrode. The control circuit contains a switching element. A smoothing choke is disposed inside the magnetic substrate. The connection wiring of connecting the upper surface electrode and at least one of the input terminal, the output terminal, and the ground terminal is constructed using an inner conductor passing through the inside of the magnetic substrate, and the connection wiring forms an inductor.
摘要:
A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.
摘要:
Lower surface terminals are disposed at the lower surface of a magnetic substrate. An upper surface electrode is disposed at the upper surface of the magnetic substrate. A control circuit, an input capacitor, and an output capacitor are mounted on the upper surface electrode. The control circuit contains a switching element. A smoothing choke is disposed inside the magnetic substrate. The connection wiring of connecting the upper surface electrode and at least one of the input terminal, the output terminal, and the ground terminal is constructed using an inner conductor passing through the inside of the magnetic substrate, and the connection wiring forms an inductor.
摘要:
Lower surface terminals are disposed at the lower surface of a magnetic substrate. An upper surface electrode is disposed at the upper surface of the magnetic substrate. A control circuit, an input capacitor, and an output capacitor are mounted on the upper surface electrode. The control circuit contains a switching element. A smoothing choke is disposed inside the magnetic substrate. The connection wiring of connecting the upper surface electrode and at least one of the input terminal, the output terminal, and the ground terminal is constructed using an inner conductor passing through the inside of the magnetic substrate, and the connection wiring forms an inductor.
摘要:
A switching control circuit comprises: an error amplifying circuit configured to output an error voltage obtained by amplifying an error between a feedback voltage corresponding to an output voltage and a lower voltage selected out of a first reference voltage increasing with time passage and a second reference voltage used as a reference for a target level; a comparison circuit configured to output a comparison signal obtained by comparing the feedback voltage with the error voltage output from the error amplifying circuit; and a drive circuit configured to output first and second control signals for controlling first and second transistors, respectively, in order to turn the output voltage to the target level by complementarily turning on and off the first and second transistors, after the error voltage exceeds the feedback voltage, based on the comparison signal output from the comparison circuit.
摘要:
This invention offers a semiconductor device to measure a luminance for the visible wavelength range of light components and its manufacturing method which reduce its manufacturing cost. A first light-receiving element and a second light-receiving element are formed in a semiconductor substrate. Then, there is formed an arithmetic circuit that calculates a difference between a value of an electric current corresponding to an amount of light detected by the first light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light) and a value of an electric current corresponding to an amount of light detected by the second light-receiving element (that is, a value of an electric current representing a relative sensitivity against the light). Next, a first green pass filter permeable only to light in a green wavelength range and an infrared wavelength range is formed to cover the first light-receiving element, while a second green pass filter similar to the first green filter is formed to cover the second light-receiving element. In addition, a red pass filter permeable only to light in a red wavelength range and the infrared wavelength range is formed to cover the second light-receiving element.
摘要:
The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.
摘要:
The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.
摘要:
The invention provides a package type semiconductor device and a manufacturing method thereof where reliability is improved without increasing a manufacturing cost. A resin layer and a supporting member are formed on a top surface of a semiconductor substrate formed with pad electrodes. Then, openings are formed penetrating the resin layer and the supporting member so as to expose the pad electrodes. Metal layers are then formed on the pad electrodes exposed in the openings, and conductive terminals are formed thereon. Finally, the semiconductor substrate is separated into semiconductor dice by dicing. When this semiconductor device is mounted on a circuit board (not shown), the conductive terminals of the semiconductor die and external electrodes of the circuit board are electrically connected with each other.