公开(公告)号：US11081593B2

公开(公告)日：2021-08-03

申请号：US16661758

申请日：2019-10-23

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Luigi Colombo

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/20 ,  H01L29/267 ,  H01L29/49 ,  H01L29/45 ,  H01L29/16 ,  H01L29/778

Abstract: A microelectronic device includes a gated graphene component. The gated graphene component has a graphitic layer containing one or more layers of graphene. The graphitic layer has a channel region, a first contact region adjacent to the channel region and a second contact region adjacent to the channel region. A patterned hexagonal boron nitride (hBN) layer is disposed on the graphitic layer above the channel region. A gate is located over the patterned hBN layer above the channel region. A first connection is disposed on the graphitic layer in the first contact region, and a second connection is disposed on the graphitic layer in the second contact region. The patterned hBN layer does not extend completely under the first connection or under the second connection. A method of forming the gated graphene component in the microelectronic device is disclosed.

公开(公告)号：US10861763B2

公开(公告)日：2020-12-08

申请号：US15361397

申请日：2016-11-26

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Archana Venugopal ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/34 ,  H01L23/495 ,  H01L23/48 ,  H01L23/52 ,  H01L23/367 ,  H01L27/02 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/768 ,  H01L23/373 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/74

Abstract: An integrated circuit has a substrate which includes a semiconductor material, and an interconnect region disposed on the substrate. The integrated circuit includes a thermal routing trench in the substrate. The thermal routing trench includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal routing trench has a thermal conductivity higher than the semiconductor material contacting the thermal routing trench. The cohered nanoparticle film is formed by an additive process.

公开(公告)号：US20190288122A1

公开(公告)日：2019-09-19

申请号：US16501731

申请日：2019-05-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Archana Venugopal ,  Luigi Colombo ,  Arup Polley

IPC: H01L29/786 ,  H01L29/16 ,  H01L21/02 ,  H01L29/20 ,  H01L29/267 ,  H01L27/092 ,  H01L21/8258 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49

Abstract: A microelectronic device includes a gated graphene component over a semiconductor material. The gated graphene component includes a graphitic layer having at least one layer of graphene. The graphitic layer has a channel region, a first connection and a second connection make electrical connections to the graphitic layer adjacent to the channel region. The graphitic layer is isolated from the semiconductor material. A backgate region having a first conductivity type is disposed in the semiconductor material under the channel region. A first contact field region and a second contact field region are disposed in the semiconductor material under the first connection and the second connection, respectively. At least one of the first contact field region and the second contact field region has a second, opposite, conductivity type. A method of forming the gated graphene component in the microelectronic device with a transistor is disclosed.

公开(公告)号：US20190229051A1

公开(公告)日：2019-07-25

申请号：US16372455

申请日：2019-04-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Archana Venugopal ,  Benjamin Stassen Cook ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/367 ,  H01L21/285 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/48 ,  H01L23/31 ,  H01L23/522 ,  H01L23/532 ,  H01L21/324 ,  H01L21/3105 ,  H01L23/373

CPC classification number: H01L23/528 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/31051 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/324 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76885 ,  H01L21/76895 ,  H01L23/3107 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/53209 ,  H01L23/53276 ,  H01L2224/48463

Abstract: An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a graphitic via in the interconnect region. The graphitic via vertically connects a first interconnect in a first interconnect level to a second interconnect in a second, higher, interconnect level. The graphitic via includes a cohered nanoparticle film of nanoparticles in which adjacent nanoparticles cohere to each other, and a layer of graphitic material disposed on the cohered nanoparticle film. The nanoparticles include one or more metals suitable for catalysis of the graphitic material. The cohered nanoparticle film is formed by a method which includes an additive process. The graphitic via is electrically coupled to an active component of the integrated circuit.

公开(公告)号：US20180151471A1

公开(公告)日：2018-05-31

申请号：US15361399

申请日：2016-11-26

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Archana Venugopal ,  Luigi Colombo ,  Robert Reid Doering

IPC: H01L23/367 ,  H01L23/522 ,  H01L23/373 ,  H01L23/00 ,  H01L21/768 ,  H01L21/48

CPC classification number: H01L23/3677 ,  H01L21/4882 ,  H01L23/3731 ,  H01L23/3733 ,  H01L23/3736

Abstract: An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a thermal via in the interconnect region. The thermal via extends vertically in at least one of the interconnect levels in the interconnect region. The thermal via includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal via has a thermal conductivity higher than dielectric material touching the thermal via. The cohered nanoparticle film is formed by a method which includes an additive process.

公开(公告)号：US09698075B2

公开(公告)日：2017-07-04

申请号：US15210970

申请日：2016-07-15

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Marie Denison ,  Luigi Colombo ,  Hiep Nguyen ,  Darvin Edwards

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48 ,  H01L23/367

CPC classification number: H01L23/373 ,  H01L21/4871 ,  H01L21/4889 ,  H01L23/367 ,  H01L23/3675 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L2224/03416 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05193 ,  H01L2224/05558 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/05693 ,  H01L2224/08165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2224/45099 ,  H01L2224/03

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

公开(公告)号：US20160322277A1

公开(公告)日：2016-11-03

申请号：US15210970

申请日：2016-07-15

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Marie Denison ,  Luigi Colombo ,  Hiep Nguyen ,  Darvin Edwards

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48 ,  H01L23/367

CPC classification number: H01L23/373 ,  H01L21/4871 ,  H01L21/4889 ,  H01L23/367 ,  H01L23/3675 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L2224/03416 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05193 ,  H01L2224/05558 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/05693 ,  H01L2224/08165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2224/45099 ,  H01L2224/03

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

Abstract translation: 微电子器件包括在半导体器件的前表面处具有部件的半导体器件和在半导体器件的背面上的背面散热器层。 背面散热器层为100纳米至3微米厚，面内热导率至少为150瓦特/米-2°K，电阻率小于100微欧姆厘米。

公开(公告)号：US20160093552A1

公开(公告)日：2016-03-31

申请号：US14499222

申请日：2014-09-28

Applicant: Texas Instruments Incorporated

Inventor： Archana Venugopal ,  Marie Denison ,  Luigi Colombo ,  Hiep Nguyen ,  Darvin Edwards

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/373 ,  H01L21/4871 ,  H01L21/4889 ,  H01L23/367 ,  H01L23/3675 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L2224/03416 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05078 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05193 ,  H01L2224/05558 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/05693 ,  H01L2224/08165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83447 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/01074 ,  H01L2224/45099 ,  H01L2224/03

Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.

公开(公告)号：US20150307355A1

公开(公告)日：2015-10-29

申请号：US14791650

申请日：2015-07-06

Applicant: Texas Instruments Incorporated

Inventor： James Cooper Wainerdi ,  Robert Reid Doering ,  Luigi Colombo

IPC: C01B31/02 ,  B03C1/035

CPC classification number: C01B31/0266 ,  B03C1/005 ,  B03C1/0335 ,  B03C1/035 ,  B03C2201/20 ,  B03C2201/22 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/172 ,  C01B2202/02 ,  C01B2202/22 ,  Y10S977/751 ,  Y10S977/845

Abstract: A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.

Abstract translation: 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。

公开(公告)号：US20140291211A1

公开(公告)日：2014-10-02

申请号：US14305119

申请日：2014-06-16

Applicant: Texas Instruments Incorporated

Inventor： James Cooper Wainerdi ,  Robert Reid Doering ,  Luigi Colombo

IPC: C01B31/02

CPC classification number: C01B31/0266 ,  B03C1/005 ,  B03C1/0335 ,  B03C1/035 ,  B03C2201/20 ,  B03C2201/22 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/172 ,  C01B2202/02 ,  C01B2202/22 ,  Y10S977/751 ,  Y10S977/845

Abstract: A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.

Abstract translation: 通过将SWNTs置于稀释流体中来分离来自半导体类型的金属单壁碳纳米管（SWNT）的过程，将SWNT暴露于偶极诱导磁场，其诱导SWNT中的磁偶极子，使得偶极子的强度取决于 包含偶极子的SWNT的导电性，定向金属SWNT，并将SWNT暴露于具有空间梯度的磁场，使得定向金属SWNT在磁场梯度中漂移，从而与半导体SWNT空间分离。 公开了一种用于排序SWNT的过程的设备。