Defect inspection and charged particle beam apparatus
    61.
    发明授权
    Defect inspection and charged particle beam apparatus 有权
    缺陷检查和带电粒子束装置

    公开(公告)号:US07348559B2

    公开(公告)日:2008-03-25

    申请号:US11498125

    申请日:2006-08-03

    IPC分类号: G01N23/00

    摘要: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 μm or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

    摘要翻译: 在将包含精细电路线图案的样本的电特性的多个探针与带电粒子束装置组合的缺陷检查装置中,带电粒子束装置即使图像偏移为±75,也降低了分辨率的劣化 妈妈还是更多 缺陷检查装置具有与图像移位功能相关联的CAD导航功能。 CAD导航功能在用于处理带电粒子束图像的图像处理单元和用于存储关于电路线图案的信息的存储器之间的通信中使用用于将图像移位移动量转换为DUT阶段移动量的坐标。 缺陷检查为用户提供了显着提高的可用性。

    Electron microscope application apparatus and sample inspection method

    公开(公告)号:US20060289755A1

    公开(公告)日:2006-12-28

    申请号:US11442566

    申请日:2006-05-30

    IPC分类号: G21K7/00

    摘要: A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.

    Electron beam device
    64.
    发明申请

    公开(公告)号:US20060284093A1

    公开(公告)日:2006-12-21

    申请号:US11499640

    申请日:2006-08-07

    IPC分类号: G21K7/00

    CPC分类号: H01J37/28 H01J37/244

    摘要: Disclosed here is a high resolution scanning electron microscope having an in-lens type objective lens. The microscope is structured so as to detect transmission electrons scattering at wide angles to observe high contrast STEM images according to each sample and purpose. A dark-field detector is disposed closely to the objective lens magnetic pole. The microscope is provided with means for moving the dark-field detector along a light axis so as to control the scattering angle of each detected dark-field signal.

    Defect inspection and charged particle beam apparatus
    65.
    发明申请
    Defect inspection and charged particle beam apparatus 有权
    缺陷检查和带电粒子束装置

    公开(公告)号:US20050263702A1

    公开(公告)日:2005-12-01

    申请号:US11139609

    申请日:2005-05-31

    摘要: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 μm or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

    摘要翻译: 在将包含精细电路线图案的样本的电特性的多个探针与带电粒子束装置组合的缺陷检查装置中,带电粒子束装置即使图像偏移为±75,也降低了分辨率的劣化 妈妈还是更多 缺陷检查装置具有与图像移位功能相关联的CAD导航功能。 CAD导航功能在用于处理带电粒子束图像的图像处理单元和用于存储关于电路线图案的信息的存储器之间的通信中使用用于将图像移位移动量转换为DUT阶段移动量的坐标。 缺陷检查为用户提供了显着提高的可用性。

    Bio electron microscope and observation method of specimen
    67.
    发明授权
    Bio electron microscope and observation method of specimen 失效
    生物电子显微镜和样品观察方法

    公开(公告)号:US06875984B2

    公开(公告)日:2005-04-05

    申请号:US10621444

    申请日:2003-07-18

    摘要: A bio electron microscope and an observation method which can observe a bio specimen by low damage and high contrast to perform high-accuracy image analysis, and conduct high-throughput specimen preparation. 1) A specimen is observed at an accelerating voltage 1.2 to 4.2 times a critical electron accelerating voltage possible to transmit a specimen obtained under predetermined conditions. 2) An electron energy filter of small and simplified construction is provided between the specimen and an electron detector for imaging by the electron beam in a specified energy region of the electron beams transmitting the specimen. 3) Similarity between an observed image such as virus or protein in the specimen and a reference image such as known virus or protein is subjected to quantitative analysis by image processing. 4) A preparation protocol of the bio specimen is made into a chip using an MEMS technique, which is then mounted on a specimen stage part of an electron microscope to conduct specimen introduction, preparation and transfer onto a specimen holder.

    摘要翻译: 一种生物电子显微镜和观察方法,可以通过低损伤和高对比度观察生物样品,进行高精度图像分析,并进行高通量样品制备。 1)在可能传输在预定条件下获得的样品的临界电子加速电压的1.2至4.2倍的加速电压下观察样品。 2)在样品和电子检测器之间提供小而简化结构的电子能过滤器,用于通过电子束在传输样品的电子束的规定能量区域内的电子束进行成像。 3)通过图像处理对样本中的观察图像(例如病毒或蛋白质)与已知病毒或蛋白质等参考图像之间的相似性进行定量分析。 4)使用MEMS技术将生物样品的制备方案制成芯片,然后将其安装在电子显微镜的样品台部分上,以将样品引入,准备和转移到样品架上。

    Scanning electron microscope and sample observation method using the same
    68.
    发明授权
    Scanning electron microscope and sample observation method using the same 有权
    扫描电子显微镜和使用其的样品观察方法

    公开(公告)号:US06855931B2

    公开(公告)日:2005-02-15

    申请号:US10815817

    申请日:2004-04-02

    摘要: According to the present invention, there are newly provided in a scanning electron microscope with an in-lens system a first low-magnification mode that sets the current of the object lens to be zero or in a weak excitation state, and a second low-magnification mode that sets the current of the object lens to be a value that changes in proportion to the square root of the accelerating voltage. The scanning electron microscope has a configuration wherein normal sample image (secondary electron image) observation is performed in the first low-magnification mode, and it switches the first low-magnification mode to the second low-magnification mode when X-ray analysis is performed. As a result, both sample image (secondary electron image) observation and X-ray analysis can be performed in low-magnification mode.

    摘要翻译: 根据本发明,在具有透镜系统的扫描电子显微镜中,新提供将物镜的电流设定为零或弱激励状态的第一低倍率模式, 将物镜的电流设定为与加速电压的平方根成比例地变化的值的倍率模式。 扫描电子显微镜具有在第一低倍率模式下进行正常的样本图像(二次电子图像)观察的结构,并且当执行X射线分析时,将第一低倍率模式切换到第二低倍率模式 。 结果,可以以低倍率模式进行样本图像(二次电子图像)观察和X射线分析。

    Scanning electron microscope
    70.
    发明授权
    Scanning electron microscope 有权
    扫描电子显微镜

    公开(公告)号:US6043491A

    公开(公告)日:2000-03-28

    申请号:US133667

    申请日:1998-08-12

    IPC分类号: H01J37/244 H01J37/28

    摘要: A scanning electron microscope in the present invention, by employing a retarding method and suppressing interferences between an electron beam and secondary electrons or back scattered electrons, makes it possible to obtain a clearer SEM image with a higher resolution. In the scanning electron microscope in the present invention, a shield electrode 117 is provided for shielding the electron beam 104 from electric fields of an energy analyzer 118 and a detector 121, and the energy analyzer 118 and the detector 121 are located in contact with an electron beam aperture 115 and the shield electrode 117.

    摘要翻译: 本发明的扫描型电子显微镜,通过采用延迟方法,抑制电子束与二次电子或背散射电子之间的干扰,能够得到更清晰的具有更高分辨率的SEM图像。 在本发明的扫描型电子显微镜中,设有屏蔽电极117,用于将电子束104与能量分析器118和检测器121的电场进行屏蔽,能量分析器118和检测器121位于与 电子束孔115和屏蔽电极117。