摘要:
In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 μm or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
摘要:
A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.
摘要:
Disclosed here is a high resolution scanning electron microscope having an in-lens type objective lens. The microscope is structured so as to detect transmission electrons scattering at wide angles to observe high contrast STEM images according to each sample and purpose. A dark-field detector is disposed closely to the objective lens magnetic pole. The microscope is provided with means for moving the dark-field detector along a light axis so as to control the scattering angle of each detected dark-field signal.
摘要:
In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 μm or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.
摘要:
A charged particle beam apparatus produces little reduction in resolution when the beam is inclined with respect to a sample. The trajectory of a primary beam 4 is deflected by a deflector or changed by a movable aperture such that the beam is incident on a plurality of lenses 6 and 7 off the axes thereof. A means is provided to control the off-axis trajectory of the beam such that an aberration produced by the objective lens 7 when the beam is inclined can be canceled by an aberration produced by the other lens 6.
摘要:
A bio electron microscope and an observation method which can observe a bio specimen by low damage and high contrast to perform high-accuracy image analysis, and conduct high-throughput specimen preparation. 1) A specimen is observed at an accelerating voltage 1.2 to 4.2 times a critical electron accelerating voltage possible to transmit a specimen obtained under predetermined conditions. 2) An electron energy filter of small and simplified construction is provided between the specimen and an electron detector for imaging by the electron beam in a specified energy region of the electron beams transmitting the specimen. 3) Similarity between an observed image such as virus or protein in the specimen and a reference image such as known virus or protein is subjected to quantitative analysis by image processing. 4) A preparation protocol of the bio specimen is made into a chip using an MEMS technique, which is then mounted on a specimen stage part of an electron microscope to conduct specimen introduction, preparation and transfer onto a specimen holder.
摘要:
According to the present invention, there are newly provided in a scanning electron microscope with an in-lens system a first low-magnification mode that sets the current of the object lens to be zero or in a weak excitation state, and a second low-magnification mode that sets the current of the object lens to be a value that changes in proportion to the square root of the accelerating voltage. The scanning electron microscope has a configuration wherein normal sample image (secondary electron image) observation is performed in the first low-magnification mode, and it switches the first low-magnification mode to the second low-magnification mode when X-ray analysis is performed. As a result, both sample image (secondary electron image) observation and X-ray analysis can be performed in low-magnification mode.
摘要:
By use of charged particle beam images picked up in different conditions, a positional displacement caused by parallax is analyzed, and an optics of an apparatus for charged particle beam microscopy is corrected automatically. An analysis method using phase difference of Fourier transform images and having analytic accuracy lower than that for one pixel is adopted for the displacement analysis. In addition, a degree of coincidence between images calculated in this analysis method is used as a criterion for evaluating the reliability of an analysis result. Since the analysis method based on parallax is low in specimen dependency, the operation range is expanded. In addition, by adopting a high-accuracy displacement analysis method, the apparatus correction accuracy is improved by one digit. A malfunction preventing flow is added using the degree of coincidence as a judgement criterion. Thus, the apparatus can deal with unmanned operation. In addition, the degree of coincidence can be used as a monitor of inspection states or a record of states in an inspection apparatus.
摘要:
A scanning electron microscope in the present invention, by employing a retarding method and suppressing interferences between an electron beam and secondary electrons or back scattered electrons, makes it possible to obtain a clearer SEM image with a higher resolution. In the scanning electron microscope in the present invention, a shield electrode 117 is provided for shielding the electron beam 104 from electric fields of an energy analyzer 118 and a detector 121, and the energy analyzer 118 and the detector 121 are located in contact with an electron beam aperture 115 and the shield electrode 117.