公开(公告)号：US06844214B1

公开(公告)日：2005-01-18

申请号：US10604850

申请日：2003-08-21

申请人： Ping Mei ,  Decai Sun ,  Robert A. Street

发明人： Ping Mei ,  Decai Sun ,  Robert A. Street

IPC分类号： B81B3/00 ,  H01L21/00 ,  H01L23/48 ,  H01R11/22

CPC分类号： B81B3/0021 ,  B81B2201/0292 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01R12/52

摘要： A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substantially parallel direction to the plane defined by the substrate and a second portion being disconnected from the substrate and extending in a substantially non-parallel direction to the plane defined by the substrate; and a sensor material layer formed over at least the second portion of the first conductive material layer, the sensor material layer having a second stress that is less than the first stress of the first conductive material layer. The stresses form a stress gradient that bends the second portion of the first conductive material layer and the sensor material layer formed over the second portion of the first conductive material layer away from the substrate.

摘要翻译： 基于微机电系统（MEMS）的传感器包括：限定平面的基板; 具有第一应力的第一导电材料层，所述第一导电材料层的第一部分连接到所述衬底并且在基本上平行于由所述衬底限定的平面的方向上延伸，并且所述第二部分与所述衬底断开并且延伸到 基本上不平行于由衬底限定的平面的方向; 以及在所述第一导电材料层的至少第二部分上形成的传感器材料层，所述传感器材料层具有小于所述第一导电材料层的第一应力的第二应力。 应力形成应力梯度，该应力梯度使第一导电材料层的第二部分和形成在第一导电材料层的第二部分上方的传感器材料层远离衬底弯曲。

公开(公告)号：US06818535B2

公开(公告)日：2004-11-16

申请号：US10282265

申请日：2002-10-28

申请人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

发明人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L21/2254 ,  H01L29/78669

摘要： An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.

摘要翻译： 描述了用于激光掺杂半导体材料的改进的方法和系统。 在本发明中，使用氮化磷作为掺杂剂源。 使磷氮化物与要掺杂的半导体的区域紧密接近。 激光的脉冲分解氮化亚氮，并且短暂熔化要掺杂的半导体的区域，以允许将掺杂剂原子从氮化磷引入到半导体中。

公开(公告)号：US06757314B2

公开(公告)日：2004-06-29

申请号：US09276913

申请日：1999-03-26

申请人： Michael A. Kneissl ,  David P. Bour ,  Ping Mei ,  Linda T. Romano

发明人： Michael A. Kneissl ,  David P. Bour ,  Ping Mei ,  Linda T. Romano

IPC分类号： H01S500

CPC分类号： H01L21/6835 ,  B82Y20/00 ,  H01L21/2007 ,  H01L27/153 ,  H01L33/0079 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/83192 ,  H01L2224/83895 ,  H01L2924/01079 ,  H01S5/0217 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4031

摘要： A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.

摘要翻译： 描述了附着到导热基底的氮化物激光二极管阵列的结构，其中已经去除了蓝宝石生长衬底。 导热衬底附着在蓝宝石生长衬底的相反侧。

公开(公告)号：US06595787B2

公开(公告)日：2003-07-22

申请号：US09780163

申请日：2001-02-09

申请人： David K. Fork ,  Ping Mei ,  Koenraad F. Van Schuylenbergh

发明人： David K. Fork ,  Ping Mei ,  Koenraad F. Van Schuylenbergh

IPC分类号： H01R1200

CPC分类号： H01L27/08 ,  H01F17/0033 ,  H01F41/041 ,  H01L21/4853 ,  H01L23/5227 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H05K3/4092 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/49218 ,  H01L2924/00

摘要： Several methods and structures for improving the yield of out-of-plane micro-device structures including springs and coils are described. In one method the springs used to form out-of-plane structures are constrained via a tether to avoid bunching and entanglement. The high yield structure may be used in numerous electronic applications such as filter circuits.

公开(公告)号：US06586318B1

公开(公告)日：2003-07-01

申请号：US09473576

申请日：1999-12-28

申请人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

发明人： Jeng Ping Lu ,  Ping Mei ,  James B. Boyce

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L21/2254 ,  H01L29/78669

摘要： An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.

摘要翻译： 描述了用于激光掺杂半导体材料的改进的方法和系统。 在本发明中，使用氮化磷作为掺杂剂源。 使磷氮化物与要掺杂的半导体的区域紧密接近。 激光的脉冲分解氮化亚氮，并且短暂熔化要掺杂的半导体的区域，以允许将掺杂剂原子从氮化磷引入到半导体中。

公开(公告)号：US6107641A

公开(公告)日：2000-08-22

申请号：US927023

申请日：1997-09-10

申请人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce ,  Christopher L. Chua ,  Michael G. Hack

发明人： Ping Mei ,  Rene A. Lujan ,  James B. Boyce ,  Christopher L. Chua ,  Michael G. Hack

IPC分类号： H01L21/223 ,  H01L21/225 ,  H01L21/266 ,  H01L21/336 ,  H01L27/144 ,  H01L27/146 ,  H01L29/786 ,  H01L31/0216 ,  H01L29/76

CPC分类号： H01L29/78696 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/266 ,  H01L27/1443 ,  H01L27/14603 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78669 ,  H01L31/02162 ,  H01L31/02165 ,  Y10S438/94

摘要： An improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser doping technique is applied to fabricate such transistors. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.

摘要翻译： 提供了不具有源极/栅极或漏极/栅极重叠的改进的薄膜晶体管结构。 应用激光掺杂技术来制造这种晶体管。 消除源极/栅极和漏极/栅极重叠显着降低或消除了源极和栅极之间的寄生电容和馈通电压。 可以获得具有高场效应迁移率的短沟道a-Si：H薄膜晶体管。 提供了改进的像素性能和像素到像素的均匀性。

公开(公告)号：US6031248A

公开(公告)日：2000-02-29

申请号：US67657

申请日：1998-04-28

申请人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

发明人： Ping Mei ,  Andrew J. Moore ,  Raj B. Apte ,  Steven E. Ready ,  Robert A. Street ,  James B. Boyce

IPC分类号： H01L27/146 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/46

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.

摘要翻译： 用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。 放大器可以是用于高增益的单个多晶硅（沟道）晶体管。 选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。 复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。 光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。 选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。 激光结晶和再氢化技术非常适合于获得本文所述的装置。

公开(公告)号：US5893948A

公开(公告)日：1999-04-13

申请号：US630955

申请日：1996-04-05

申请人： Norbert H. Nickel ,  Gregory B. Anderson ,  Steven E. Ready ,  James B. Boyce ,  Ping Mei

发明人： Norbert H. Nickel ,  Gregory B. Anderson ,  Steven E. Ready ,  James B. Boyce ,  Ping Mei

IPC分类号： H01L31/04 ,  C30B13/00 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  C30B13/06

CPC分类号： C30B29/06 ,  C30B13/00 ,  Y10S117/902

摘要： The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.

摘要翻译： 本发明提供了一种在衬底上形成多个单晶硅晶体的方法。 该方法在衬底上形成多个成核位点。 在覆盖多个硅成核位​​置的衬底上形成非晶硅层。 通过使用激光束熔化非晶硅层，然后结晶以形成多个单晶硅晶体。 多个单晶硅晶体中的每一个对应于多个成核位点中的一个。

公开(公告)号：US07710371B2

公开(公告)日：2010-05-04

申请号：US11014490

申请日：2004-12-16

申请人： Ping Mei ,  Jurgen Daniel ,  James B. Boyce ,  Kathleen Dore Boyce, legal representative ,  Jackson Ho ,  Rachel Lau ,  Yu Wang

发明人： Ping Mei ,  Jurgen Daniel ,  James B. Boyce ,  Jackson Ho ,  Rachel Lau ,  Yu Wang

IPC分类号： G09G3/34 ,  C25B9/00 ,  F04B17/00 ,  B41J2/14 ,  G02F1/153 ,  H04R19/00

CPC分类号： C25D5/02 ,  C23C18/28 ,  C25D5/56 ,  H04R19/04

摘要： Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume. Arrays of such cells can be implemented for various applications, such as optical modulators, displays, printheads, and microphones.

摘要翻译： 细胞可以包括在诸如聚合物层的柔性结构和支撑表面之间限定的可变体积，其中柔性结构和支撑表面附接在围绕其未连接的第二区域的第一区域中。 各种粘合结构可以附接柔性结构和支撑表面。 当未拉伸时，柔性结构可以位于支撑表面上的平坦位置。 响应于远离支撑表面的拉伸力，柔性结构可以移出平坦位置，从而提供可变的体积。 诸如柔性结构的电极，在支撑表面上以及柔性结构上的电极可以具有彼此耦合并且具有可变体积的电荷水平。 支撑结构可以包括具有提供电极和外部电路之间的信号路径的信号电路的器件层。 一个或多个管道可以提供与每个电池的可变体积的流体连通。 可以对诸如光学调制器，显示器，打印头和麦克风的各种应用来实现这种单元的阵列。

公开(公告)号：US07585424B2

公开(公告)日：2009-09-08

申请号：US11037886

申请日：2005-01-18

申请人： Ping Mei

发明人： Ping Mei

IPC分类号： H01L21/027

CPC分类号： H01L51/0017 ,  C23F4/00 ,  Y10S438/924 ,  Y10S438/945

摘要： This invention provides a pattern reversal process for self aligned imprint lithography (SAIL). The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of material, the pattern providing at least one exposed area and at least one covered area of the layer of material. The exposed areas are treated to toughen the material and reverse the pattern. Subsequent etching removes the un-toughened material. A thin-film transistor device provided by the pattern reversal process is also provided.

摘要翻译： 本发明提供了一种用于自对准压印光刻（SAIL）的图案反转方法。 该方法包括提供衬底并在衬底上沉积至少一层材料。 然后在材料层上建立图案，该图案提供材料层的至少一个暴露区域和至少一个覆盖区域。 处理暴露的区域以增强材料并反转图案。 随后的蚀刻去除未增韧的材料。 还提供了通过图案反转处理提供的薄膜晶体管器件。