公开(公告)号：US20170278686A1

公开(公告)日：2017-09-28

申请号：US15447875

申请日：2017-03-02

Applicant: Tokyo Electron Limited

Inventor： Jozef Brcka

IPC: H01J37/34 ,  H01L21/285 ,  C23C14/34 ,  H01J37/32 ,  C23C14/32 ,  C23C14/35

CPC classification number: H01J37/3476 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3464 ,  C23C14/358 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32183 ,  H01J37/3402 ,  H01J37/3429

Abstract: Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.

公开(公告)号：US09587305B2

公开(公告)日：2017-03-07

申请号：US14129395

申请日：2012-06-28

Applicant: Johan Bohlmark ,  Hermann Curtins ,  Axel Kinell

Inventor： Johan Bohlmark ,  Hermann Curtins ,  Axel Kinell

IPC: C23C14/00 ,  C23C14/32 ,  C23C14/06 ,  C23C14/52 ,  H01J37/34

CPC classification number: C23C14/325 ,  C23C14/0641 ,  C23C14/52 ,  H01J37/34 ,  H01J37/3414 ,  H01J37/3476

Abstract: The present invention provides a method for depositing a wear resistant coating on a cutting tool substrate. Cathodic arc deposition is performed using one or more plate-shaped targets and a high arc current of at least 200 A, preferably at least 400 A, whereby a high total ion current of at least 5 A is provided in front of the substrates. A comparatively low bias voltage may be used in order to avoid negative effects of ions impinging on the substrates with high kinetic energy. Thanks to the method of the invention it is possible to deposit thick wear resistant coatings on cutting tool substrates in order to improve cutting performance and tool life.

Abstract translation: 本发明提供了一种在切削工具基板上沉积耐磨涂层的方法。 使用一个或多个板状靶和至少200，优选至少400的高电弧电流进行阴极电弧沉积，由此在衬底前面提供至少5A的高总离子电流。 可以使用相对较低的偏置电压，以避免离子以高动能撞击在衬底上的负面影响。 由于本发明的方法，可以在切削工具基底上沉积厚的耐磨涂层，以便提高切削性能和刀具寿命。

公开(公告)号：US20170029940A1

公开(公告)日：2017-02-02

申请号：US15304132

申请日：2015-04-14

Applicant: SOLERAS ADVANCED COATINGS BVBA

Inventor： Ivan VAN DE PUTTE ,  Niek DEWILDE ,  Guy GOBIN ,  Wilmert DE BOSSCHER

IPC: C23C14/54 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/545 ,  C23C14/35 ,  C23C14/352 ,  H01J37/3299 ,  H01J37/3405 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461 ,  H01J37/347 ,  H01J37/3476

Abstract: A sputter system for applying a coating on a substrate is described. The sputter system comprises at least two cylindrical sputter units for the joint sputtering of a single coating. Each sputter unit comprising an elongated magnet configuration and at least one elongated magnet configuration comprising a plurality of magnet structures and magnet structure control systems along the length direction of the elongated magnet configuration. At least one magnet structure is adjustable in position and/or shape by a magnet structure control system, while a sputter target is mounted on the sputter unit.

Abstract translation: 描述了一种用于在基底上涂覆涂层的溅射系统。 溅射系统包括用于单个涂层的联合溅射的至少两个圆柱形溅射单元。 每个溅射单元包括细长磁体构造和至少一个细长磁体构造，其包括沿细长磁体构造的长度方向的多个磁体结构和磁体结构控制系统。 至少一个磁体结构通过磁体结构控制系统在位置和/或形状上是可调节的，而溅射靶安装在溅射单元上。

公开(公告)号：US20160376694A1

公开(公告)日：2016-12-29

申请号：US15039457

申请日：2013-11-27

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： Juan Kiwi ,  Sami Rtimi ,  César Pulgarin

IPC: C23C14/06 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34 ,  A01N59/16 ,  A61L29/10 ,  A61L31/16 ,  A61L31/08 ,  A01N59/20 ,  C23C14/34 ,  A61L29/16

CPC classification number: C23C14/0688 ,  A01N59/16 ,  A01N59/20 ,  A61L29/106 ,  A61L29/16 ,  A61L31/088 ,  A61L31/16 ,  A61L2300/404 ,  C23C14/0042 ,  C23C14/083 ,  C23C14/205 ,  C23C14/3414 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3429 ,  H01J37/3467 ,  H01J37/3476

Abstract: Active films and processes for depositing the same onto a complex 3D shape substrates and implants are provided. The process comprises the following steps: inserting into a process chamber a sputtering target, including at least two chemical elements and a complex shape 3D substrate on a substrate holder, providing a gas to be ionized into the process chamber with a controlled pressure; applying a voltage in pulse between the sputtering target and the complex shape 3D substrate; and generating a magnetic field at the surface of the sputtering target inside the process chamber as required for HIPIMS.

Abstract translation: 提供了将其沉积在复杂3D形状的基底和植入物上的活性膜和方法。 该方法包括以下步骤：在处理室中将包括至少两个化学元素和复合形状3D基板的溅射靶插入到基板保持器上，以受控的压力提供待离子化到处理室中的气体; 在溅射靶和复合形状3D基板之间施加脉冲电压; 并根据HIPIMS的要求在处理室内的溅射靶的表面产生磁场。

公开(公告)号：US09418823B2

公开(公告)日：2016-08-16

申请号：US14019877

申请日：2013-09-06

Applicant: Sputtering Components, Inc.

Inventor： Daniel Theodore Crowley ,  Patrick Lawrence Morse ,  John Robert German

IPC: C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  H01J37/34

CPC classification number: H01J37/3455 ,  H01J37/345 ,  H01J37/347 ,  H01J37/3476 ,  H01J37/3479

Abstract: A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure, and at least one actuation mechanism coupled to the rigid support structure and configured to change a distance of the magnet bar structure from a surface of a rotatable target cylinder. The magnetron assembly also includes a position indicating mechanism operative to measure a position of the magnet bar structure relative to the surface of the rotatable target cylinder. A communications device is configured to receive command signals from outside of the magnetron assembly and transmit information signals to outside of the magnetron assembly.

Abstract translation: 用于旋转目标阴极的磁控管组件包括刚性支撑结构，可移动地附接到刚性支撑结构的磁棒结构，以及联接到刚性支撑结构并被配置为改变磁棒结构与轴承结构的距离的至少一个致动机构 可旋转目标气缸的表面。 磁控管组件还包括位置指示机构，其可操作以测量磁棒结构相对于可旋转目标气缸的表面的位置。 通信设备被配置为从磁控管组件的外部接收命令信号，并将信息信号发送到磁控管组件的外部。

公开(公告)号：US09382614B2

公开(公告)日：2016-07-05

申请号：US14479207

申请日：2014-09-05

Applicant: Apple Inc.

Inventor： John Z. Zhong ,  Sunggu Kang ,  Wookyung Bae

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/58

CPC classification number: C23C14/5873 ,  C23C14/564 ,  C23C14/5846 ,  H01J37/32449 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/3476 ,  H01J37/3488

Abstract: Sputter deposition systems and methods for depositing film coatings on one or more substrates are disclosed. The systems and methods are used to prevent or reduce an amount of defects within a deposited film. The methods involve removing defect-related particles that are formed during a deposition process from certain regions of the sputter deposition system and preventing the defect-related particles from detrimentally affecting the quality of the deposited film. In particular embodiments, methods involve creating a flow of gas from a deposition region to a particle collection region the sputter deposition system such that the defect-related particles are entrained within the flow of gas and away from the deposition region. In particular embodiments, the sputter deposition system is a meta-mode sputter deposition system.

Abstract translation: 公开了用于在一个或多个基底上沉积膜涂层的溅射沉积系统和方法。 系统和方法用于防止或减少沉积膜内的缺陷量。 所述方法包括去除在溅射沉积系统的某些区域的沉积过程期间形成的缺陷相关颗粒，并防止缺陷相关颗粒不利地影响沉积膜的质量。 在具体实施方案中，方法包括从沉积区域到溅射沉积系统的颗粒收集区域产生气体流，使得缺陷相关颗粒被夹带在气体流中并远离沉积区域。 在特定实施例中，溅射沉积系统是元模式溅射沉积系统。

公开(公告)号：US20160056026A1

公开(公告)日：2016-02-25

申请号：US14932289

申请日：2015-11-04

Applicant: CANON ANELVA CORPORATION

Inventor： Hidetomo NARADATE ,  Masahiro SHIBAMOTO

IPC: H01J37/34

CPC classification number: H01J37/3476 ,  C23C14/35 ,  C23C14/542 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32935 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/345

Abstract: The present invention provides a processing apparatus including a vacuum vessel, a plurality of electrodes arranged in the vacuum vessel, a plurality of power supplies configured to apply potentials to the plurality of electrodes, a detector configured to detect a potential in a process space between a substrate transferred into the vacuum vessel and each of the plurality of electrodes, and a controller configured to control phases of the potentials to be applied to the plurality of electrodes by the plurality of power supplies based on the potential detected by the detector.

Abstract translation: 本发明提供了一种处理装置，包括真空容器，布置在真空容器中的多个电极，多个电源，被配置为向多个电极施加电位;检测器，被配置为检测在 基板转移到真空容器和多个电极中的每一个，以及控制器，其被配置为基于由检测器检测的电位来控制由多个电源施加到多个电极的电位的相位。

公开(公告)号：US20160033840A1

公开(公告)日：2016-02-04

申请号：US14885734

申请日：2015-10-16

Applicant: View, Inc.

Inventor： Robert T. Rozbicki

IPC: G02F1/153 ,  G02F1/1333 ,  C23C14/34 ,  G02F1/155

CPC classification number: G02F1/1533 ,  C23C14/028 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  G02F1/1309 ,  G02F1/133345 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/508 ,  H01B5/14 ,  H01B13/00 ,  H01J37/3429 ,  H01J37/3476

Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

公开(公告)号：US20150131140A1

公开(公告)日：2015-05-14

申请号：US14601141

申请日：2015-01-20

Applicant: View, Inc.

Inventor： Sridhar K. KAILASAM ,  Robin FRIEDMAN ,  Dane GILLASPIE ,  Anshu A. PRADHAN ,  Robert ROZBICKI ,  Disha MEHTANI

IPC: G02F1/153 ,  G02F1/1333 ,  G02F1/15 ,  G02F1/155

CPC classification number: G02F1/1533 ,  C23C14/028 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  G02F1/1309 ,  G02F1/133345 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/508 ,  H01B5/14 ,  H01B13/00 ,  H01J37/3429 ,  H01J37/3476

Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Abstract translation: 电致变色装置和方法可以采用增加缺陷缓解绝缘层，防止电子传导层和/或电致变色层接触相反极性的层，并在缺陷形成的区域中产生短路。 在一些实施例中，提供封装层以封装颗粒并防止它们从器件堆叠中排出，并且在后续层沉积时冒着短路。 绝缘层可具有在约1和108欧姆 - 厘米之间的电阻率。 在一些实施例中，绝缘层含有一种或多种以下金属氧化物：氧化铝，氧化锌，氧化锡，氧化硅铝，氧化铈，氧化钨，氧化镍氧化物和氧化铟锡氧化物。 也可以使用硬质合金，氮化物，氧氮化物和碳氧化物。

公开(公告)号：US20150114562A1

公开(公告)日：2015-04-30

申请号：US14582590

申请日：2014-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akitake TAMURA ,  Teruyuki Hayashi

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/34 ,  H01J37/32522 ,  H01J37/3476 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67248 ,  H01L21/67766 ,  H01L21/67772 ,  H01L21/67778

Abstract: Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.

Abstract translation: 防止任何颗粒附着在待处理基材的表面上。 提供了一种基板处理装置，其特征在于包括：传送室，用于经由设置用于容纳基板的基板容纳容器的栅极，在其之间进行基板与基板容纳容器的传送;处理室， 对基板施加特定的处理，用于将处理室与传送室连接的加载锁定室以及用于在将基板转移到传送室和装载锁定室中的至少一个的阶段的温度控制单元 ，因为刚好在其转移之前的衬底的温度高于将被转移到其中的衬底内部的温度，控制衬底的温度和温度的至少一个 室内