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136 条记录 (耗时 0.091 秒)

    Semiconductor light emitting device and fabrication method thereof
    73.
    发明授权
    Semiconductor light emitting device and fabrication method thereof 有权

    公开(公告)号：US07030421B2

    公开(公告)日：2006-04-18

    申请号：US10962025

    申请日：2004-10-08

    申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

    发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

    IPC分类号： H01L33/00

    CPC分类号： H01L33/24

    摘要： Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.

    Selective growth method, and semiconductor light emitting device and fabrication method thereof
    75.
    发明授权
    Selective growth method, and semiconductor light emitting device and fabrication method thereof 有权
    选择性生长方法和半导体发光器件及其制造方法

    公开(公告)号：US06969670B2

    公开(公告)日：2005-11-29

    申请号：US10341827

    申请日：2003-01-14

    申请人： Goshi Biwa ,  Hiroyuki Okuyama

    发明人： Goshi Biwa ,  Hiroyuki Okuyama

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/44 ,  H01L21/365 ,  C30B25/04 ,  C30B28/14

    CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/06 ,  Y10S438/93 ,  Y10S438/974

    摘要： At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.

    摘要翻译： 在衬底上的有源层的选择性生长时，预先在有源层非生长区域中生长晶体，并且在活性层选择性生长区域中生长活性层。 利用这种构造，从生长的初始阶段将提供给非生长区的源结合到沉积的晶体中，使得向活性层选择生长区提供的源的量保持在恒定值 活性层的整个生长周期，以消除由于活性层的生长速率的变化引起的器件的特性劣化。 特别地，选择生长方法在制造包括包覆层，引导层和有源层的半导体发光器件中是有效的，其中每一个通过选择性生长形成，其中有源层具有多个量子阱。

    Semiconductor light emitting device and fabrication method thereof
    76.
    发明授权
    Semiconductor light emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US06967353B2

    公开(公告)日：2005-11-22

    申请号：US10341706

    申请日：2003-01-14

    申请人： Jun Suzuki ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Etsuo Morita

    发明人： Jun Suzuki ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Etsuo Morita

    IPC分类号： H01L33/06 ,  H01L33/16 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/38 ,  H01L29/22 ,  H01L29/18 ,  H01L29/24 ,  H01L33/00

    CPC分类号： H01L33/24 ,  H01L33/18

    摘要： A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.

    摘要翻译： 半导体发光器件包括形成在衬底上的晶体层，所述晶体层具有从衬底的主平面倾斜的倾斜晶体面，以及第一导电类型层，有源层和第二导电型层， 以平行于倾斜晶面的平面内延伸的方式形成在晶体层上，其中，该器件具有通过去除形成在基板上的堆叠层结构的顶点及其附近而形成的形状。 这种半导体发光器件即使器件具有三维器件结构，发光效率也优异。 本发明还提供一种制造上述半导体发光器件的方法。